JP2007227885A - ミリメートル波動作のための窒化物ベースのトランジスタ - Google Patents
ミリメートル波動作のための窒化物ベースのトランジスタ Download PDFInfo
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- 125000006850 spacer group Chemical group 0.000 claims abstract description 28
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- 229910010271 silicon carbide Inorganic materials 0.000 description 10
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- 229910052737 gold Inorganic materials 0.000 description 6
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
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- 229910052757 nitrogen Inorganic materials 0.000 description 3
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
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- 229910000838 Al alloy Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910000807 Ga alloy Inorganic materials 0.000 description 1
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- KTWOOEGAPBSYNW-UHFFFAOYSA-N ferrocene Chemical compound [Fe+2].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 KTWOOEGAPBSYNW-UHFFFAOYSA-N 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/207—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
Abstract
【解決手段】第III族窒化物チャネル層と;第III族窒化物チャネル層の上のスペーサ層と;第III族窒化物チャネル層の上にあり、かつ30GHzを超える周波数において印加される電圧に応じてチャネル層の伝導率を変調するのに十分なゲート長を有するゲート接点と;ゲート接点と電気的に接続され、スペーサ層を横断してドレイン接点に向かう方向に少なくとも約0.1μm延びる下部フィールドプレートと;第III族窒化物チャネル層の上のソース接点およびドレイン接点とを含み、少なくとも30GHzの周波数における動作時に約5W/mmより大きな電力密度を示すことを特徴とする電界効果トランジスタ。
【選択図】図1
Description
単一フィールドプレート構造を有する第1の例示のデバイスは、高純度半絶縁性SiC基板12を含む。基板12の上にAlNバッファ層14を形成する。AlNバッファ層14は、約200nmの厚さを有する。バッファ層12の上にGaNの第1チャネル副層16Aを提供する。第1チャネル副層16Aは約0.8μmの厚さを有する。第1チャネル副層16Aを、約1×1018/cm3の濃度のFeでドープする。第1チャネル副層16Aの上に、約0.8μmの厚さを有するGaNの第2チャネル副層16Bを形成する。第2チャネル副層16Bは、非意図的にドープされており、該層中に第1チャネル副層16Aからの距離にしたがって減少する残留濃度のFeドーパントを有する。
14 バッファ層
16 チャネル層
18 バリア層
20 ソース
22 ドレイン
24 ゲート
26 二次元電子ガスチャネル
62 スペーサ層
64 フィールドプレート
Claims (17)
- 第III族窒化物チャネル層と、
該第III族窒化物チャネル層の上のスペーサ層と、
ゲート接点であって、該第III族窒化物チャネル層の上にあり、かつゲート接点に印加される電圧に応じてチャネル層の導電率を変調するように設計され、30GHzを超える周波数においてチャネル層の導電率の変調を可能にするのに十分であるゲート長を有するゲート接点と、
ゲート接点と電気的に接続され、スペーサ層を横断してドレイン接点に向かう方向に距離LFDにわたって延び、LFDが少なくとも約0.1μmである下部フィールドプレートと、
該第III族窒化物チャネル層の上のソース接点およびドレイン接点と
を含む電界効果トランジスタであって、少なくとも30GHzの周波数において動作する際に約5W/mmより大きな電力密度を示すように設計されていることを特徴とする電界効果トランジスタ。 - 該チャネル層の上に第III族窒化物バリア層をさらに含み、ゲート接点およびスペーサ層はバリア層の上に形成され、およびバリア層およびチャネル層が、バリア層およびチャネル層の間の界面近傍のチャネル層内に、二次元電子ガスを協調的に誘起することを特徴とする請求項1に記載の電界効果トランジスタ。
- バリア層が、チャネル層上の第1バリア副層と、第1バリア副層上の第2バリア副層とを含み、第1バリア副層がAlNを含み、および第2バリア副層がAlxGa1−xN(式中、0.15≦x≦0.45)を含むことを特徴とする請求項2に記載の電界効果トランジスタ。
- 第1バリア副層が約0から約4nmの厚さを有し、および第2バリア副層が約10から約50nmの厚さを有することを特徴とする請求項3に記載の電界効果トランジスタ。
- チャネル層が、第1チャネル副層と、第1チャネル副層上の第2チャネル副層とを含み、第1チャネル副層がGaNを含み、かつ少なくとも約1×1017/cm3の濃度のFeドーパントを有し、第2チャネル副層がGaNを含み、第1チャネル副層からの距離にしたがって減少する濃度のFeドーパントを有することを特徴とする請求項1に記載の電界効果トランジスタ。
- LFDが約0.25μmであることを特徴とする請求項1に記載の電界効果トランジスタ。
- 該フィールドプレートが、スペーサ層を横断してソース電極に向かう方向に約0.2μmの距離LFSにわたって延びていることを特徴とする請求項1に記載の電界効果トランジスタ。
- スペーサ層がSiNを含むことを特徴とする請求項6に記載の電界効果トランジスタ。
- 28Vのドレイン電圧において、少なくとも5W/mmの電力密度を提供することを特徴とする請求項1に記載の電界効果トランジスタ。
- 約30%より大きい電力付加効率を有することを特徴とする請求項1に記載の電界効果トランジスタ。
- 少なくとも30GHzの周波数において動作する際に、約8W/mmより大きな電力密度を示すように設計されていることを特徴とする請求項1に記載の電界効果トランジスタ。
- 少なくとも40GHzの周波数において動作する際に、約5W/mmより大きな電力密度を示すように設計されていることを特徴とする請求項1に記載の電界効果トランジスタ。
- 少なくとも30GHzの周波数において動作する際に、約5W/mmより大きな電力密度を有することを特徴とする電界効果トランジスタ。
- 28Vのドレイン電圧において、少なくとも5W/mmの電力密度が提供されることを特徴とする請求項13に記載の電界効果トランジスタ。
- 約30%より大きな電力付加効率を有することを特徴とする請求項13に記載の電界効果トランジスタ。
- 少なくとも35GHzの周波数において動作する際に、8W/mmより大きな電力密度および30%より大きな電力付加効率を有することを特徴とする電界効果トランジスタ。
- 少なくとも40GHzの周波数において動作する際に、8W/mmより大きな電力密度および30%より大きな電力付加効率を有することを特徴とする電界効果トランジスタ。
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US11/360,876 | 2006-02-23 | ||
US11/360,876 US7566918B2 (en) | 2006-02-23 | 2006-02-23 | Nitride based transistors for millimeter wave operation |
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JP2007227885A true JP2007227885A (ja) | 2007-09-06 |
JP5350585B2 JP5350585B2 (ja) | 2013-11-27 |
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EP (1) | EP1826823A3 (ja) |
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WO2010016213A1 (ja) * | 2008-08-06 | 2010-02-11 | 日本電気株式会社 | 電界効果トランジスタ |
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EP1826823A2 (en) | 2007-08-29 |
US20070194354A1 (en) | 2007-08-23 |
JP5350585B2 (ja) | 2013-11-27 |
US7566918B2 (en) | 2009-07-28 |
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