JP5621006B2 - 金属及びシリコンの交互層を含むコンタクト構造体並びに関連デバイスの形成方法 - Google Patents
金属及びシリコンの交互層を含むコンタクト構造体並びに関連デバイスの形成方法 Download PDFInfo
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- JP5621006B2 JP5621006B2 JP2012552918A JP2012552918A JP5621006B2 JP 5621006 B2 JP5621006 B2 JP 5621006B2 JP 2012552918 A JP2012552918 A JP 2012552918A JP 2012552918 A JP2012552918 A JP 2012552918A JP 5621006 B2 JP5621006 B2 JP 5621006B2
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- 229910052751 metal Inorganic materials 0.000 title claims description 170
- 239000002184 metal Substances 0.000 title claims description 170
- 229910052710 silicon Inorganic materials 0.000 title claims description 64
- 239000010703 silicon Substances 0.000 title claims description 64
- 238000000034 method Methods 0.000 title claims description 21
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 79
- 239000004065 semiconductor Substances 0.000 claims description 73
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 63
- 229910052759 nickel Inorganic materials 0.000 claims description 38
- 229910021332 silicide Inorganic materials 0.000 claims description 33
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 33
- 239000010936 titanium Substances 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 26
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 24
- 150000004767 nitrides Chemical class 0.000 claims description 24
- 229910052719 titanium Inorganic materials 0.000 claims description 24
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 21
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 21
- 238000000137 annealing Methods 0.000 claims description 14
- 239000010931 gold Substances 0.000 claims description 13
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 12
- 229910052737 gold Inorganic materials 0.000 claims description 12
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 12
- 229910052763 palladium Inorganic materials 0.000 claims description 10
- 229910052697 platinum Inorganic materials 0.000 claims description 10
- 230000008878 coupling Effects 0.000 claims description 6
- 238000010168 coupling process Methods 0.000 claims description 6
- 238000005859 coupling reaction Methods 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 274
- 239000000758 substrate Substances 0.000 description 21
- 229910002601 GaN Inorganic materials 0.000 description 18
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 15
- 230000004888 barrier function Effects 0.000 description 14
- 239000011241 protective layer Substances 0.000 description 13
- 229910010271 silicon carbide Inorganic materials 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 9
- 229910002704 AlGaN Inorganic materials 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 3
- 229910021334 nickel silicide Inorganic materials 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- YYCNOHYMCOXPPJ-UHFFFAOYSA-N alumane;nickel Chemical group [AlH3].[Ni] YYCNOHYMCOXPPJ-UHFFFAOYSA-N 0.000 description 2
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910021341 titanium silicide Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- -1 GaN Chemical class 0.000 description 1
- 241000881234 Nisia Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HYXGAEYDKFCVMU-UHFFFAOYSA-N scandium oxide Chemical compound O=[Sc]O[Sc]=O HYXGAEYDKFCVMU-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/452—Ohmic electrodes on AIII-BV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Description
103:半導体構造体
103a:チャネル層
103b:バリア層
105:フォトレジスト・リフトオフマスク
106:ソース/ドレイン領域
107:第1の金属の層
109:交互層
109a:シリコン層
109b:第2の金属の層
109’:第2の金属のシリサイド層
111:キャップ層(第3の金属の層)
115、115’:オーミック・コンタクト構造体
117:保護層
119:ゲート・コンタクト領域
121:ソース/ドレイン電極
123:ゲート電極
Claims (9)
- 半導体デバイスを形成する方法であって、
III族窒化物半導体層を準備するステップと、
前記III族窒化物半導体層上に第1の金属の第1の層を準備するステップと、
前記第1の金属の前記第1の層上に第2の層を準備するステップと、
を含み、前記第2の層はシリコンの層及び第2の金属の層を含み、前記第1の金属と前記第2の金属とは異なっており、
前記シリコン層は少なくとも2つのシリコン層を含み、前記第2の金属の前記層は、前記少なくとも2つのシリコン層を分離する前記第2の金属の少なくとも1つの層を含んでおり、
前記少なくとも2つのシリコン層及び前記第2の金属の前記少なくとも1つの層を含む前記第2の層をアニールして前記第2の金属を含むシリサイド層を形成すると同時に、前記シリサイド層と前記III族窒化物半導体層との間に前記第1の金属の前記第1の層の少なくとも一部を保持するステップをさらに含む
ことを特徴とする方法。 - 前記第1の金属はチタンを含み、前記第2の金属はニッケルを含み、前記少なくとも2つのシリコン層及びニッケルを含む前記第2の金属の前記少なくとも1つの層をアニールして前記シリサイド層を形成するステップは、約500℃を超えない温度でアニールするステップを含むことを特徴とする、請求項1に記載の方法。
- 前記第2の層を準備するステップは、シリコンと前記第2の金属との複数の交互層を準備するステップを含み、前記第2の金属の前記層はいずれも、前記シリコン層の少なくとも1つによって前記第1の金属の前記第1の層から分離されることを特徴とする、請求項2に記載の方法。
- 前記少なくとも2つのシリコン層及び前記第2の金属の前記少なくとも1つの層を含む前記第2の層上に金属キャップ層を準備するステップをさらに含み、前記金属キャップ層と前記第2の金属とは異なる材料を含み、
前記第1の金属はチタンを含み、前記第2の金属はニッケルを含み、前記金属キャップ層は、白金、パラジウム、及び/又は金の少なくとも1つを含むことを特徴とする、請求項3に記載の方法。 - 前記III族窒化物半導体層を準備するステップは、
2次元電子ガスをもたらすIII族窒化物ヘテロ接合構造体を準備するステップと、
前記第1の金属の前記層と前記2次元電子ガスとの間に電気的結合をもたらすドープ領域を準備するステップと、
を含むことを特徴とする、請求項1に記載の方法。 - III族窒化物半導体層と、
前記III族窒化物半導体層上の第1の金属の層と、
前記第1の金属の前記層上のシリサイド層と、
を含み、前記シリサイド層は第2の金属を含み、前記第1の金属と前記第2の金属とは異なっており、前記第1の金属はチタンを含み、前記第2の金属はニッケルを含むことを特徴とする半導体デバイス。 - 前記シリサイド層内のシリコンの原子重量パーセントは、約45パーセントから約55パーセントまでの範囲にあることを特徴とする、請求項6に記載の半導体デバイス。
- 前記シリサイド層上の第3の金属の層をさらに含み、前記第3の金属は、前記第1の金属及び前記第2の金属とは異なることを特徴とする、請求項6に記載の半導体デバイス。
- 前記第1の金属はチタンを含み、前記第2の金属はニッケルを含み、前記第3の金属は、白金、パラジウム、及び/又は金の少なくとも1つを含むことを特徴とする、請求項8に記載の半導体デバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/704,013 US8563372B2 (en) | 2010-02-11 | 2010-02-11 | Methods of forming contact structures including alternating metal and silicon layers and related devices |
US12/704,013 | 2010-02-11 | ||
PCT/US2011/023975 WO2011100212A1 (en) | 2010-02-11 | 2011-02-08 | Methods of forming contact structures including alternating metal and silicon layers and related devices |
Publications (2)
Publication Number | Publication Date |
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JP2013520014A JP2013520014A (ja) | 2013-05-30 |
JP5621006B2 true JP5621006B2 (ja) | 2014-11-05 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2012552918A Active JP5621006B2 (ja) | 2010-02-11 | 2011-02-08 | 金属及びシリコンの交互層を含むコンタクト構造体並びに関連デバイスの形成方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8563372B2 (ja) |
EP (1) | EP2534684B1 (ja) |
JP (1) | JP5621006B2 (ja) |
CN (1) | CN102884621B (ja) |
WO (1) | WO2011100212A1 (ja) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9214352B2 (en) | 2010-02-11 | 2015-12-15 | Cree, Inc. | Ohmic contact to semiconductor device |
US9548206B2 (en) | 2010-02-11 | 2017-01-17 | Cree, Inc. | Ohmic contact structure for group III nitride semiconductor device having improved surface morphology and well-defined edge features |
JP5685020B2 (ja) * | 2010-07-23 | 2015-03-18 | 住友電気工業株式会社 | 半導体装置の製造方法 |
US8466555B2 (en) * | 2011-06-03 | 2013-06-18 | Raytheon Company | Gold-free ohmic contacts |
US9111905B2 (en) | 2012-03-29 | 2015-08-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | High electron mobility transistor and method of forming the same |
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