TW550437B - Chemical amplification type negative-working resist composition for electron beams or X-rays - Google Patents

Chemical amplification type negative-working resist composition for electron beams or X-rays Download PDF

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Publication number
TW550437B
TW550437B TW089126445A TW89126445A TW550437B TW 550437 B TW550437 B TW 550437B TW 089126445 A TW089126445 A TW 089126445A TW 89126445 A TW89126445 A TW 89126445A TW 550437 B TW550437 B TW 550437B
Authority
TW
Taiwan
Prior art keywords
group
substituted
fluorine
acid
rays
Prior art date
Application number
TW089126445A
Other languages
English (en)
Chinese (zh)
Inventor
Yutaka Adegawa
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Application granted granted Critical
Publication of TW550437B publication Critical patent/TW550437B/zh

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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055Radiation sensitive composition or product or process of making
    • Y10S430/106Binder containing

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
TW089126445A 1999-12-16 2000-12-12 Chemical amplification type negative-working resist composition for electron beams or X-rays TW550437B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP35802299A JP3989149B2 (ja) 1999-12-16 1999-12-16 電子線またはx線用化学増幅系ネガ型レジスト組成物

Publications (1)

Publication Number Publication Date
TW550437B true TW550437B (en) 2003-09-01

Family

ID=18457148

Family Applications (1)

Application Number Title Priority Date Filing Date
TW089126445A TW550437B (en) 1999-12-16 2000-12-12 Chemical amplification type negative-working resist composition for electron beams or X-rays

Country Status (5)

Country Link
US (1) US6528233B2 (https=)
EP (1) EP1109066A1 (https=)
JP (1) JP3989149B2 (https=)
KR (1) KR100725118B1 (https=)
TW (1) TW550437B (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI381250B (zh) * 2005-11-28 2013-01-01 Shinetsu Chemical Co 光阻底層膜材料及圖型之形成方法
TWI395063B (zh) * 2006-07-24 2013-05-01 Shinetsu Chemical Co 負型光阻材料及使用其形成圖型之方法

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JP4194259B2 (ja) * 2000-08-31 2008-12-10 富士フイルム株式会社 ネガ型レジスト組成物
DE10058951A1 (de) * 2000-11-28 2002-06-20 Infineon Technologies Ag Verfahren zur Herstellung einer Lithographiemaske für eine integrierte Schaltung
JP4645789B2 (ja) * 2001-06-18 2011-03-09 Jsr株式会社 ネガ型感放射線性樹脂組成物
TW588218B (en) * 2001-08-21 2004-05-21 Fuji Photo Film Co Ltd Stimulation-sensitive composition and compound
US7521168B2 (en) 2002-02-13 2009-04-21 Fujifilm Corporation Resist composition for electron beam, EUV or X-ray
JP4498690B2 (ja) * 2002-05-30 2010-07-07 ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. 新規樹脂およびそれを含有するフォトレジスト組成物
US7083892B2 (en) * 2002-06-28 2006-08-01 Fuji Photo Film Co., Ltd. Resist composition
JP4222850B2 (ja) 2003-02-10 2009-02-12 Spansion Japan株式会社 感放射線性樹脂組成物、その製造法並びにそれを用いた半導体装置の製造方法
US7129016B2 (en) * 2004-11-12 2006-10-31 International Business Machines Corporation Positive resist containing naphthol functionality
US7326523B2 (en) * 2004-12-16 2008-02-05 International Business Machines Corporation Low refractive index polymers as underlayers for silicon-containing photoresists
EP1825325A4 (en) * 2004-12-16 2010-05-26 Ibm LOW BREAKING INDEX POLYMERS AS UNDERLAYS FOR SILICONE PHOTORE LISTS
WO2007049593A1 (ja) * 2005-10-25 2007-05-03 Mitsubishi Rayon Co., Ltd. レジスト用重合体、レジスト組成物、パターンが形成された基板の製造方法、重合性モノマー、および重合性モノマーの製造方法
JP5138199B2 (ja) * 2005-10-25 2013-02-06 三菱レイヨン株式会社 レジスト用重合体、レジスト組成物、パターンが形成された基板の製造方法
TWI400571B (zh) * 2006-03-14 2013-07-01 Fujifilm Corp 正型光阻組成物及使用它之圖案形成方法
JP4880523B2 (ja) * 2006-07-24 2012-02-22 信越化学工業株式会社 ネガ型レジスト材料及びこれを用いたパターン形成方法
JP5037919B2 (ja) * 2006-12-06 2012-10-03 三菱レイヨン株式会社 ビニルナフタレン化合物の精製方法
JP5006054B2 (ja) * 2007-01-15 2012-08-22 三菱レイヨン株式会社 レジスト用重合体、レジスト組成物及びパターンが形成された基板の製造方法
JP5006055B2 (ja) * 2007-01-15 2012-08-22 三菱レイヨン株式会社 レジスト組成物および微細パターンが形成された基板の製造方法
JP5059419B2 (ja) * 2007-01-15 2012-10-24 三菱レイヨン株式会社 重合体、レジスト組成物及びパターンが形成された基板の製造方法
JP5339494B2 (ja) * 2007-01-15 2013-11-13 三菱レイヨン株式会社 重合体、レジスト組成物及びパターンが形成された基板の製造方法
JP5318350B2 (ja) * 2007-01-15 2013-10-16 三菱レイヨン株式会社 重合体、レジスト組成物及びパターンが形成された基板の製造方法
JP5416889B2 (ja) * 2007-06-08 2014-02-12 三菱レイヨン株式会社 レジスト用重合体、レジスト組成物、およびパターンが形成された基板の製造方法
JP5507113B2 (ja) * 2009-04-24 2014-05-28 東京応化工業株式会社 ポジ型レジスト組成物、レジストパターン形成方法、高分子化合物および化合物
JP5597616B2 (ja) * 2011-10-03 2014-10-01 富士フイルム株式会社 ネガ型化学増幅レジスト組成物、並びに、それを用いたレジスト膜、レジスト塗布マスクブランクス、レジストパターン形成方法、及び、フォトマスク
CN103554044A (zh) * 2013-10-21 2014-02-05 张家港顺昌化工有限公司 连续法制备六甲氧基甲基三聚氰胺树脂的连续制备方法
US10020456B2 (en) * 2014-09-25 2018-07-10 Basf Se Ether-based polymers as photo-crosslinkable dielectrics
JP6579428B2 (ja) * 2015-07-16 2019-09-25 川崎化成工業株式会社 置換オキシ−2−ナフチル(メタ)アクリレート化合物、その製造方法及びその用途
KR102243197B1 (ko) * 2016-09-26 2021-04-22 후지필름 가부시키가이샤 레지스트 조성물, 패턴 형성 방법 및 전자 디바이스의 제조 방법
CN107494553B (zh) * 2017-09-11 2020-09-11 西华大学 一种没食子酸衍生的农用杀菌剂及用途
EP3762979A1 (en) 2018-03-07 2021-01-13 Clap Co., Ltd. Patterning method for preparing top-gate, bottom-contact organic field effect transistors
EP3735430B1 (en) * 2018-06-26 2023-09-13 Clap Co., Ltd. Vinylether-based polymer as dielectric
JP7788806B2 (ja) * 2020-06-26 2025-12-19 住友化学株式会社 化合物、樹脂、レジスト組成物及びレジストパターンの製造方法

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI381250B (zh) * 2005-11-28 2013-01-01 Shinetsu Chemical Co 光阻底層膜材料及圖型之形成方法
TWI395063B (zh) * 2006-07-24 2013-05-01 Shinetsu Chemical Co 負型光阻材料及使用其形成圖型之方法

Also Published As

Publication number Publication date
EP1109066A1 (en) 2001-06-20
US6528233B2 (en) 2003-03-04
JP3989149B2 (ja) 2007-10-10
KR100725118B1 (ko) 2007-06-04
US20010036590A1 (en) 2001-11-01
JP2001174995A (ja) 2001-06-29
KR20010062405A (ko) 2001-07-07

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