TW368685B - Method of fabricating bump electrode - Google Patents

Method of fabricating bump electrode

Info

Publication number
TW368685B
TW368685B TW083110171A TW83110171A TW368685B TW 368685 B TW368685 B TW 368685B TW 083110171 A TW083110171 A TW 083110171A TW 83110171 A TW83110171 A TW 83110171A TW 368685 B TW368685 B TW 368685B
Authority
TW
Taiwan
Prior art keywords
connection electrode
exposed
bump electrode
organic film
electrode
Prior art date
Application number
TW083110171A
Other languages
English (en)
Inventor
Takeshi Wakabayashi
Original Assignee
Casio Computer Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Casio Computer Co Ltd filed Critical Casio Computer Co Ltd
Application granted granted Critical
Publication of TW368685B publication Critical patent/TW368685B/zh

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    • H—ELECTRICITY
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    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
  • Wire Bonding (AREA)
TW083110171A 1993-11-05 1994-11-04 Method of fabricating bump electrode TW368685B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5299057A JP2698827B2 (ja) 1993-11-05 1993-11-05 バンプ電極を備えた半導体装置の製造方法

Publications (1)

Publication Number Publication Date
TW368685B true TW368685B (en) 1999-09-01

Family

ID=17867650

Family Applications (2)

Application Number Title Priority Date Filing Date
TW083110171A TW368685B (en) 1993-11-05 1994-11-04 Method of fabricating bump electrode
TW087104623A TW368710B (en) 1993-11-05 1994-11-04 Semiconductor device with bump electrode

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW087104623A TW368710B (en) 1993-11-05 1994-11-04 Semiconductor device with bump electrode

Country Status (8)

Country Link
US (2) US5538920A (zh)
EP (1) EP0652590B1 (zh)
JP (1) JP2698827B2 (zh)
KR (1) KR0142136B1 (zh)
CN (1) CN1042986C (zh)
DE (1) DE69415927T2 (zh)
MY (1) MY112712A (zh)
TW (2) TW368685B (zh)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3383329B2 (ja) * 1992-08-27 2003-03-04 株式会社東芝 半導体装置の製造方法
JP2698827B2 (ja) * 1993-11-05 1998-01-19 カシオ計算機株式会社 バンプ電極を備えた半導体装置の製造方法
JPH1032244A (ja) * 1996-07-16 1998-02-03 Nec Corp 半導体装置及びその製造方法
US5817540A (en) * 1996-09-20 1998-10-06 Micron Technology, Inc. Method of fabricating flip-chip on leads devices and resulting assemblies
EP1048483B1 (en) * 1997-12-22 2007-07-11 Hitachi, Ltd. Card-like semiconductor device
US6214716B1 (en) * 1998-09-30 2001-04-10 Micron Technology, Inc. Semiconductor substrate-based BGA interconnection and methods of farication same
US6715663B2 (en) * 2002-01-16 2004-04-06 Intel Corporation Wire-bond process flow for copper metal-six, structures achieved thereby, and testing method
JP2004119430A (ja) * 2002-09-24 2004-04-15 Tadatomo Suga 接合装置および方法
JP3877717B2 (ja) * 2003-09-30 2007-02-07 三洋電機株式会社 半導体装置およびその製造方法
JP2006222232A (ja) * 2005-02-09 2006-08-24 Fujitsu Ltd 半導体装置およびその製造方法
JP2006270031A (ja) * 2005-02-25 2006-10-05 Casio Comput Co Ltd 半導体装置およびその製造方法
JP5170915B2 (ja) * 2005-02-25 2013-03-27 株式会社テラミクロス 半導体装置の製造方法
CN100411220C (zh) * 2005-03-17 2008-08-13 复旦大学 表面嫁接有机共轭分子的半导体材料及其制备方法
JP2006303379A (ja) * 2005-04-25 2006-11-02 Seiko Epson Corp 半導体装置の製造方法
JP4232044B2 (ja) * 2005-07-05 2009-03-04 セイコーエプソン株式会社 半導体装置の製造方法
US20070085224A1 (en) * 2005-09-22 2007-04-19 Casio Computer Co., Ltd. Semiconductor device having strong adhesion between wiring and protective film, and manufacturing method therefor
JP4760918B2 (ja) * 2009-01-23 2011-08-31 カシオ計算機株式会社 撮像装置、被写体追従方法、及びプログラム
KR101965875B1 (ko) 2017-10-11 2019-08-13 주식회사 핀텔 영상 분석을 기반으로 한 길 안내 방법 및 장치
KR20210124707A (ko) 2020-04-07 2021-10-15 삼성전기주식회사 체적 음향 공진기

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1230421A (zh) * 1967-09-15 1971-05-05
JPS57126149A (en) * 1981-01-30 1982-08-05 Seiko Instr & Electronics Ltd Manufacture of semiconductor device
JPS5843540A (ja) * 1981-09-09 1983-03-14 Nec Corp 半導体装置の配線形成方法
JPS5940550A (ja) * 1982-08-30 1984-03-06 Hitachi Ltd 半導体装置
JPS59172745A (ja) * 1983-03-22 1984-09-29 Matsushita Electronics Corp 半導体装置の電極形成方法
JPS59178745A (ja) * 1983-03-29 1984-10-11 Sanyo Electric Co Ltd 半導体集積回路
JPS61203654A (ja) * 1985-03-07 1986-09-09 Toshiba Corp 半導体装置及びその製造方法
JP2633586B2 (ja) * 1987-10-21 1997-07-23 株式会社東芝 バンプ構造を有する半導体装置
KR910006967B1 (ko) * 1987-11-18 1991-09-14 가시오 게이상기 가부시기가이샤 반도체 장치의 범프 전극 구조 및 그 형성 방법
JPH02246246A (ja) * 1989-03-20 1990-10-02 Fujitsu Ltd 半導体装置の製造方法
US5244833A (en) * 1989-07-26 1993-09-14 International Business Machines Corporation Method for manufacturing an integrated circuit chip bump electrode using a polymer layer and a photoresist layer
JPH0492432A (ja) * 1990-08-08 1992-03-25 Seiko Epson Corp 半導体装置
JPH0513585A (ja) * 1991-06-28 1993-01-22 Sumitomo Electric Ind Ltd 化合物半導体装置の製造方法
JPH05109734A (ja) * 1991-10-16 1993-04-30 Seiko Epson Corp 半導体装置および半導体装置の製造方法
JP2698827B2 (ja) * 1993-11-05 1998-01-19 カシオ計算機株式会社 バンプ電極を備えた半導体装置の製造方法

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US5705856A (en) 1998-01-06
TW368710B (en) 1999-09-01
CN1042986C (zh) 1999-04-14
CN1108806A (zh) 1995-09-20
DE69415927D1 (de) 1999-02-25
JPH07130750A (ja) 1995-05-19
JP2698827B2 (ja) 1998-01-19
EP0652590B1 (en) 1999-01-13
KR0142136B1 (ko) 1998-07-15
KR950015677A (ko) 1995-06-17
EP0652590A1 (en) 1995-05-10
US5538920A (en) 1996-07-23
MY112712A (en) 2001-08-30

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