TW368710B - Semiconductor device with bump electrode - Google Patents
Semiconductor device with bump electrodeInfo
- Publication number
- TW368710B TW368710B TW087104623A TW87104623A TW368710B TW 368710 B TW368710 B TW 368710B TW 087104623 A TW087104623 A TW 087104623A TW 87104623 A TW87104623 A TW 87104623A TW 368710 B TW368710 B TW 368710B
- Authority
- TW
- Taiwan
- Prior art keywords
- connection electrode
- exposed
- semiconductor device
- electrode
- opening
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract 2
- 239000002344 surface layer Substances 0.000 abstract 2
- 229910052786 argon Inorganic materials 0.000 abstract 1
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 210000000056 organ Anatomy 0.000 abstract 1
Classifications
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- H01L23/3157—Partial encapsulation or coating
- H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
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Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Drying Of Semiconductors (AREA)
- Wire Bonding (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5299057A JP2698827B2 (ja) | 1993-11-05 | 1993-11-05 | バンプ電極を備えた半導体装置の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW368710B true TW368710B (en) | 1999-09-01 |
Family
ID=17867650
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW083110171A TW368685B (en) | 1993-11-05 | 1994-11-04 | Method of fabricating bump electrode |
TW087104623A TW368710B (en) | 1993-11-05 | 1994-11-04 | Semiconductor device with bump electrode |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW083110171A TW368685B (en) | 1993-11-05 | 1994-11-04 | Method of fabricating bump electrode |
Country Status (8)
Country | Link |
---|---|
US (2) | US5538920A (zh) |
EP (1) | EP0652590B1 (zh) |
JP (1) | JP2698827B2 (zh) |
KR (1) | KR0142136B1 (zh) |
CN (1) | CN1042986C (zh) |
DE (1) | DE69415927T2 (zh) |
MY (1) | MY112712A (zh) |
TW (2) | TW368685B (zh) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3383329B2 (ja) * | 1992-08-27 | 2003-03-04 | 株式会社東芝 | 半導体装置の製造方法 |
JP2698827B2 (ja) * | 1993-11-05 | 1998-01-19 | カシオ計算機株式会社 | バンプ電極を備えた半導体装置の製造方法 |
JPH1032244A (ja) * | 1996-07-16 | 1998-02-03 | Nec Corp | 半導体装置及びその製造方法 |
US5817540A (en) * | 1996-09-20 | 1998-10-06 | Micron Technology, Inc. | Method of fabricating flip-chip on leads devices and resulting assemblies |
AU4118099A (en) * | 1997-12-22 | 1999-07-12 | Hitachi Limited | Semiconductor device |
US6214716B1 (en) | 1998-09-30 | 2001-04-10 | Micron Technology, Inc. | Semiconductor substrate-based BGA interconnection and methods of farication same |
US6715663B2 (en) * | 2002-01-16 | 2004-04-06 | Intel Corporation | Wire-bond process flow for copper metal-six, structures achieved thereby, and testing method |
JP2004119430A (ja) * | 2002-09-24 | 2004-04-15 | Tadatomo Suga | 接合装置および方法 |
JP3877717B2 (ja) * | 2003-09-30 | 2007-02-07 | 三洋電機株式会社 | 半導体装置およびその製造方法 |
JP2006222232A (ja) * | 2005-02-09 | 2006-08-24 | Fujitsu Ltd | 半導体装置およびその製造方法 |
JP5170915B2 (ja) * | 2005-02-25 | 2013-03-27 | 株式会社テラミクロス | 半導体装置の製造方法 |
JP2006270031A (ja) * | 2005-02-25 | 2006-10-05 | Casio Comput Co Ltd | 半導体装置およびその製造方法 |
CN100411220C (zh) * | 2005-03-17 | 2008-08-13 | 复旦大学 | 表面嫁接有机共轭分子的半导体材料及其制备方法 |
JP2006303379A (ja) * | 2005-04-25 | 2006-11-02 | Seiko Epson Corp | 半導体装置の製造方法 |
JP4232044B2 (ja) * | 2005-07-05 | 2009-03-04 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
US20070085224A1 (en) * | 2005-09-22 | 2007-04-19 | Casio Computer Co., Ltd. | Semiconductor device having strong adhesion between wiring and protective film, and manufacturing method therefor |
JP4760918B2 (ja) * | 2009-01-23 | 2011-08-31 | カシオ計算機株式会社 | 撮像装置、被写体追従方法、及びプログラム |
KR101965875B1 (ko) | 2017-10-11 | 2019-08-13 | 주식회사 핀텔 | 영상 분석을 기반으로 한 길 안내 방법 및 장치 |
KR20210124707A (ko) | 2020-04-07 | 2021-10-15 | 삼성전기주식회사 | 체적 음향 공진기 |
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GB1230421A (zh) * | 1967-09-15 | 1971-05-05 | ||
JPS57126149A (en) * | 1981-01-30 | 1982-08-05 | Seiko Instr & Electronics Ltd | Manufacture of semiconductor device |
JPS5843540A (ja) * | 1981-09-09 | 1983-03-14 | Nec Corp | 半導体装置の配線形成方法 |
JPS5940550A (ja) * | 1982-08-30 | 1984-03-06 | Hitachi Ltd | 半導体装置 |
JPS59172745A (ja) * | 1983-03-22 | 1984-09-29 | Matsushita Electronics Corp | 半導体装置の電極形成方法 |
JPS59178745A (ja) * | 1983-03-29 | 1984-10-11 | Sanyo Electric Co Ltd | 半導体集積回路 |
JPS61203654A (ja) * | 1985-03-07 | 1986-09-09 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2633586B2 (ja) * | 1987-10-21 | 1997-07-23 | 株式会社東芝 | バンプ構造を有する半導体装置 |
KR910006967B1 (ko) * | 1987-11-18 | 1991-09-14 | 가시오 게이상기 가부시기가이샤 | 반도체 장치의 범프 전극 구조 및 그 형성 방법 |
JPH02246246A (ja) * | 1989-03-20 | 1990-10-02 | Fujitsu Ltd | 半導体装置の製造方法 |
US5244833A (en) * | 1989-07-26 | 1993-09-14 | International Business Machines Corporation | Method for manufacturing an integrated circuit chip bump electrode using a polymer layer and a photoresist layer |
JPH0492432A (ja) * | 1990-08-08 | 1992-03-25 | Seiko Epson Corp | 半導体装置 |
JPH0513585A (ja) * | 1991-06-28 | 1993-01-22 | Sumitomo Electric Ind Ltd | 化合物半導体装置の製造方法 |
JPH05109734A (ja) * | 1991-10-16 | 1993-04-30 | Seiko Epson Corp | 半導体装置および半導体装置の製造方法 |
JP2698827B2 (ja) * | 1993-11-05 | 1998-01-19 | カシオ計算機株式会社 | バンプ電極を備えた半導体装置の製造方法 |
-
1993
- 1993-11-05 JP JP5299057A patent/JP2698827B2/ja not_active Expired - Lifetime
-
1994
- 1994-11-01 US US08/332,697 patent/US5538920A/en not_active Expired - Lifetime
- 1994-11-03 DE DE69415927T patent/DE69415927T2/de not_active Expired - Lifetime
- 1994-11-03 EP EP94117365A patent/EP0652590B1/en not_active Expired - Lifetime
- 1994-11-04 TW TW083110171A patent/TW368685B/zh not_active IP Right Cessation
- 1994-11-04 CN CN94118217A patent/CN1042986C/zh not_active Expired - Lifetime
- 1994-11-04 TW TW087104623A patent/TW368710B/zh not_active IP Right Cessation
- 1994-11-04 KR KR1019940028918A patent/KR0142136B1/ko not_active IP Right Cessation
- 1994-11-04 MY MYPI94002929A patent/MY112712A/en unknown
-
1996
- 1996-03-29 US US08/623,990 patent/US5705856A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5538920A (en) | 1996-07-23 |
EP0652590A1 (en) | 1995-05-10 |
MY112712A (en) | 2001-08-30 |
CN1042986C (zh) | 1999-04-14 |
DE69415927D1 (de) | 1999-02-25 |
US5705856A (en) | 1998-01-06 |
JPH07130750A (ja) | 1995-05-19 |
KR950015677A (ko) | 1995-06-17 |
CN1108806A (zh) | 1995-09-20 |
DE69415927T2 (de) | 1999-05-27 |
KR0142136B1 (ko) | 1998-07-15 |
JP2698827B2 (ja) | 1998-01-19 |
EP0652590B1 (en) | 1999-01-13 |
TW368685B (en) | 1999-09-01 |
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