TW368710B - Semiconductor device with bump electrode - Google Patents

Semiconductor device with bump electrode

Info

Publication number
TW368710B
TW368710B TW087104623A TW87104623A TW368710B TW 368710 B TW368710 B TW 368710B TW 087104623 A TW087104623 A TW 087104623A TW 87104623 A TW87104623 A TW 87104623A TW 368710 B TW368710 B TW 368710B
Authority
TW
Taiwan
Prior art keywords
connection electrode
exposed
semiconductor device
electrode
opening
Prior art date
Application number
TW087104623A
Other languages
English (en)
Inventor
Takeshi Wakabayashi
Original Assignee
Casio Computer Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Casio Computer Co Ltd filed Critical Casio Computer Co Ltd
Application granted granted Critical
Publication of TW368710B publication Critical patent/TW368710B/zh

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157Partial encapsulation or coating
    • H01L23/3171Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
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    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293Organic, e.g. plastic
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
  • Wire Bonding (AREA)
TW087104623A 1993-11-05 1994-11-04 Semiconductor device with bump electrode TW368710B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5299057A JP2698827B2 (ja) 1993-11-05 1993-11-05 バンプ電極を備えた半導体装置の製造方法

Publications (1)

Publication Number Publication Date
TW368710B true TW368710B (en) 1999-09-01

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TW083110171A TW368685B (en) 1993-11-05 1994-11-04 Method of fabricating bump electrode
TW087104623A TW368710B (en) 1993-11-05 1994-11-04 Semiconductor device with bump electrode

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Application Number Title Priority Date Filing Date
TW083110171A TW368685B (en) 1993-11-05 1994-11-04 Method of fabricating bump electrode

Country Status (8)

Country Link
US (2) US5538920A (zh)
EP (1) EP0652590B1 (zh)
JP (1) JP2698827B2 (zh)
KR (1) KR0142136B1 (zh)
CN (1) CN1042986C (zh)
DE (1) DE69415927T2 (zh)
MY (1) MY112712A (zh)
TW (2) TW368685B (zh)

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JP3383329B2 (ja) * 1992-08-27 2003-03-04 株式会社東芝 半導体装置の製造方法
JP2698827B2 (ja) * 1993-11-05 1998-01-19 カシオ計算機株式会社 バンプ電極を備えた半導体装置の製造方法
JPH1032244A (ja) * 1996-07-16 1998-02-03 Nec Corp 半導体装置及びその製造方法
US5817540A (en) * 1996-09-20 1998-10-06 Micron Technology, Inc. Method of fabricating flip-chip on leads devices and resulting assemblies
AU4118099A (en) * 1997-12-22 1999-07-12 Hitachi Limited Semiconductor device
US6214716B1 (en) 1998-09-30 2001-04-10 Micron Technology, Inc. Semiconductor substrate-based BGA interconnection and methods of farication same
US6715663B2 (en) * 2002-01-16 2004-04-06 Intel Corporation Wire-bond process flow for copper metal-six, structures achieved thereby, and testing method
JP2004119430A (ja) * 2002-09-24 2004-04-15 Tadatomo Suga 接合装置および方法
JP3877717B2 (ja) * 2003-09-30 2007-02-07 三洋電機株式会社 半導体装置およびその製造方法
JP2006222232A (ja) * 2005-02-09 2006-08-24 Fujitsu Ltd 半導体装置およびその製造方法
JP5170915B2 (ja) * 2005-02-25 2013-03-27 株式会社テラミクロス 半導体装置の製造方法
JP2006270031A (ja) * 2005-02-25 2006-10-05 Casio Comput Co Ltd 半導体装置およびその製造方法
CN100411220C (zh) * 2005-03-17 2008-08-13 复旦大学 表面嫁接有机共轭分子的半导体材料及其制备方法
JP2006303379A (ja) * 2005-04-25 2006-11-02 Seiko Epson Corp 半導体装置の製造方法
JP4232044B2 (ja) * 2005-07-05 2009-03-04 セイコーエプソン株式会社 半導体装置の製造方法
US20070085224A1 (en) * 2005-09-22 2007-04-19 Casio Computer Co., Ltd. Semiconductor device having strong adhesion between wiring and protective film, and manufacturing method therefor
JP4760918B2 (ja) * 2009-01-23 2011-08-31 カシオ計算機株式会社 撮像装置、被写体追従方法、及びプログラム
KR101965875B1 (ko) 2017-10-11 2019-08-13 주식회사 핀텔 영상 분석을 기반으로 한 길 안내 방법 및 장치
KR20210124707A (ko) 2020-04-07 2021-10-15 삼성전기주식회사 체적 음향 공진기

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US5538920A (en) 1996-07-23
EP0652590A1 (en) 1995-05-10
MY112712A (en) 2001-08-30
CN1042986C (zh) 1999-04-14
DE69415927D1 (de) 1999-02-25
US5705856A (en) 1998-01-06
JPH07130750A (ja) 1995-05-19
KR950015677A (ko) 1995-06-17
CN1108806A (zh) 1995-09-20
DE69415927T2 (de) 1999-05-27
KR0142136B1 (ko) 1998-07-15
JP2698827B2 (ja) 1998-01-19
EP0652590B1 (en) 1999-01-13
TW368685B (en) 1999-09-01

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