JPS5478662A - Semiconductor device and its manufacture - Google Patents

Semiconductor device and its manufacture

Info

Publication number
JPS5478662A
JPS5478662A JP14629977A JP14629977A JPS5478662A JP S5478662 A JPS5478662 A JP S5478662A JP 14629977 A JP14629977 A JP 14629977A JP 14629977 A JP14629977 A JP 14629977A JP S5478662 A JPS5478662 A JP S5478662A
Authority
JP
Japan
Prior art keywords
film
projection
substrate
resist mask
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14629977A
Other languages
Japanese (ja)
Inventor
Kenzo Hatada
Kosei Kajiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP14629977A priority Critical patent/JPS5478662A/en
Publication of JPS5478662A publication Critical patent/JPS5478662A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To obtain the highly reliable anti-corrosion structure without using any protective film by eliminating the step part from the surface of the substrate.
CONSTITUTION: The opening is drilled to oxide film 34 on diffusion layer 32 on substrate 31 via resist mask 34, and then Al 36 is coated. The mask is removed, with Cr37' and Cu37" laminated on the flat surface. Resist mask 38 is formed selectively, and a projection of gold or the like is coated about 15 m on film 37 with metal film 37 used as the electrode. Then film 38 is removed, and resist mask 41 is formed broader than film 36 and surrounding projection 40, with film 37' and 37" etched selectively. Metal film 37 protects buried Al layer 36 and function to secure close adhesion between the wiring substance, projection 40 and substrate 31 respectively. In this way, no corrosion occurs since the direct touch is avoided between Al or the periphery of the metal projection and the intensive alkaline solution.
COPYRIGHT: (C)1979,JPO&Japio
JP14629977A 1977-12-05 1977-12-05 Semiconductor device and its manufacture Pending JPS5478662A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14629977A JPS5478662A (en) 1977-12-05 1977-12-05 Semiconductor device and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14629977A JPS5478662A (en) 1977-12-05 1977-12-05 Semiconductor device and its manufacture

Publications (1)

Publication Number Publication Date
JPS5478662A true JPS5478662A (en) 1979-06-22

Family

ID=15404529

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14629977A Pending JPS5478662A (en) 1977-12-05 1977-12-05 Semiconductor device and its manufacture

Country Status (1)

Country Link
JP (1) JPS5478662A (en)

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