CN1108806A - 半导体器件的制造方法 - Google Patents

半导体器件的制造方法 Download PDF

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CN1108806A
CN1108806A CN94118217A CN94118217A CN1108806A CN 1108806 A CN1108806 A CN 1108806A CN 94118217 A CN94118217 A CN 94118217A CN 94118217 A CN94118217 A CN 94118217A CN 1108806 A CN1108806 A CN 1108806A
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connection electrode
corrosion
organic membrane
carry out
out dry
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CN1042986C (zh
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若林猛
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Casio Computer Co Ltd
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Abstract

一种半导体器件，具有连接电极，并有由有机材 料形成的保护膜，保护着连接电极。在保护膜内形成 窗口，露出连接电极，用氩基干腐蚀法腐蚀自然氧化 层。在干腐蚀工艺中使保护膜的表层改性，以降低绝 缘性。后来在连接电极上形成突出电极之后，用氧基 干腐蚀去掉保护膜的改性表层。因未在保护膜上留 下改性表层，则不存在诸如绝缘不充分之类的不利影 响。

Description

本发明涉及一种半导体器件的制造方法。
现有一种半导体器件（IC芯片）的装配方案，被称作用来将半导体器件装配到TAB带上的TAB（自动焊接带）系统。在此情况下，将设置在半导体器件上的突起电极，通过金-锡共晶焊、金-金热压焊等连接到TAB带上的指形引线（内引线）上。
一般将半导体器件设计成，通过在硅片上钝化膜所形成的窗口露出在硅片（半导体器件本体或管子芯片）上所形成的连接电极之形式。突起电极是在连接电极上形成的。连接电极由贱金属，诸如铝或铝合金制成。在制作具有这种结构的半导体器件中，在连接电极上形成突起电极之前，用氩离子通过干法腐蚀去掉在各连接电极表面上所形成的绝缘的自然氧化层。
为更好地保护半导体器件的表面，提出在由氮化硅制成的钝化膜上形成由聚酰亚胺制成的保护膜的结构。在制作具有这种结构的半导体器件中，在形成聚酰亚胺钝化膜之后，用氩离子进行干腐蚀，以去掉在连接电极表面上所形成的自然氧化层。保护膜的表面层得以改性，但被氩离子损伤。这会降低绝缘电阻，而导致绝缘不充分，以致至少在相邻的连接电极间可能发生漏电或短路。
所以，本发明的目的在于提供一种制造半导体器件的方法，使之不因由聚酰亚胺制成的保护膜表面层的改性（若发生的话）而受到不利的影响。
为实现旧述目的，提出一种半导体器件的制作方法，该法包括：在一半导体基片的一个表面上设置连接电极的步骤;形成具有窗口的有机膜的步骤，该窗口形成在基片的一个表面上，通过该窗口至少露出连接电极表面的一部分;腐蚀连接电极的裸露表面层的步骤;在连接电极上淀积突出电极的步骤;以及腐蚀有机膜的表面层的步骤。
图1（A）-1（E）是表明本发明一实施例的半导体器件的各制作步骤的剖面图;
图1（A）表示在一硅片上形成了一保护膜、一用以形成中间连接膜的层以及一用以形成薄金膜的薄层的结构;
图1（B）表示在硅片上形成光刻胶（光致抗蚀剂）膜之后，用光掩模实行暴光的情形;
图1（C）表示在硅片上的光刻胶膜上形成窗口之结构;
图1（D）表示在光刻胶膜上所形成的窗口内形成突起电极之结构;以及
图1（E）表示去掉光刻胶膜及用以形成中间连接膜的层和用以形成薄金膜的薄层的不需要部位之后的结构。
图2（A）是使半导体器件的突起电极与TAB带的指形引线相连接的结构之平面视图;
图2（B）是图2（A）所示结构一部分的剖面图;以及
图3（A）和3（B）分别是表示实施本发明的半导体器件改型的剖面图。
现在参照图1（A）-1（E）说明依据本发明一实施例的半导体器件。图1（A）-1（E）是表明依据一实施例的半导体器件的各制作步骤的剖面图。
如图1（A）所示，在硅片（半导体基片或半导体器件本体）1形成一内电极2，如一栅电极，及氧化硅制作的绝缘膜。在绝缘膜3上形成由贱金金属如铝或铝合金制成的连接电极4。用互连线（未示出）使连接电极4与内电极2相连接。在绝缘膜3和连接电极4的整个表面上形成无机材料如氮化硅的钝化膜5。然后，通过腐蚀钝化膜的预定位置形成窗口6，以使连接电极4的中心部位通过窗口6露出。留下连接电极4周围及绝缘膜3顶部的钝化膜5。在钝化膜5及连接电极4的整个表面上淀积大约1-5μm厚的有机材料如树脂类聚酰亚胺的保护膜7。通过腐蚀在保护膜7的预定位置形成窗口8，以便通过窗口6和8露出连接电极4的中心部位。留下除窗口外的钝化膜5表面上的保护膜7。在本实施例中，保护膜7的窗口8的外形比钝化膜5的窗口6大。
为去掉在连接电极4表面上所形成的绝缘自然氧化层（未示出），在真空中用氩离子对硅片1的整个表面实行干腐蚀。由聚酰亚胺制成的保护膜7的表面层由氩离子而改性，形成大约100-200厚的改性层（未示出）。接着，为防止连接电极4的表面层的氧化，使硅片1在真空中进行下一步骤。在下一步骤中，按指定的程序，在所得结构上蒸发淀积或溅射一层合金如钛钨合金，产生用以形成中间连接膜的一层合金9及用以形成大约例如厚200-600nm的薄金膜的薄金属层10。
接着，在薄膜10的表面上放置一光刻胶珠，然后实行旋涂，形成较厚的大约20-30μm的光刻胶膜11，如图1（B）所示。为使光刻胶膜11有大约20-30μm厚度，本实施例所用的光刻胶珠（例如BMR1000，东京应化工业株式社会产）的粘滞度应有300-1700CPS（百分之一泊），比普通的粘滞度大3-17倍。旋除的转速应是200-700rpm。
用一预定的光掩膜12使光刻胶膜11暴光，如图1（B）所示。
使暴光后的光刻胶膜11显影，以在光刻胶膜11的预定位置形成窗口13。更具体地说，在相对于保护膜7的窗口8的部位及窗口8的周围区域形成窗口13，如图1（C）所示。在此情况下，使用基本上由二甲苯组成的有机溶剂（例如C-3，东京应化工业株式会社）作显影液。
然后，在窗口13电镀金，在窗口13内薄层10的顶部形成笔直的突起电极（突出电极）14，如图1（D）所示。为让突起电极14的顶部平坦，外形整齐，当突起电极14的顶表面未从光刻胶11顶表面突出时，其厚度大约有20-30μm。在突起电极14形成之后，用基本上由乙基溶纤剂和二氯苯组成的有机溶剂（例如脱胶剂SP，东京应化工业株式会社产）去掉光刻胶膜11。
然后，用突出电极14作腐蚀掩模，用含碘的滤液腐蚀掉薄层10的不需要部位，以便由余下的薄层10形成薄金膜10a，如图1（E）所示。接着，再用突起电极14作腐蚀掩模，通过干腐蚀去掉层9的不需要部位，以便由余下的层9形成中间连接膜9a。然后，用氧等离子体对硅片1的整个表面实行干腐蚀，去掉改性层，即保护膜7的表层。为达此目的可以使用微波磨光系统。当使用佳能公司产的MAS8000微波磨光系统，其使用条件为：频率2450MHz，输出功率500W，电极温度150℃，氧流量150SCCM，压力0.8mmTorr以及磨光时间为20-40秒时，由聚酰亚胺制作的保护膜7的表层大约被去掉200-500nm。
突起的电极14的金表面即不被氧等离子体腐蚀也不改性。可以使用RF（射频）磨光系统或类似的系统，或实行臭氧处理或类似的处理。
如此得到的半导体器件，在形成突起电极14、薄金膜10a及中间连接膜9a之后，通过干腐蚀去掉保护膜7的表层。所以，即使为去掉在连接电极4的表面所形成的绝缘的自然氧化层，通过干腐蚀使保护膜7的表面改性，则可防止因保护膜7表面改性引发的不利影响。
参照图2（A）及2（B），现在说明，使按上述方法制作物半导体器件的突起电极与TAB带的指状引线相焊接的情况。首先，将经过上述各工艺步骤的硅片1切割成各个半导体器件（芯片）21。单个半导体器件21具有各个上述的突起电极14。TAB带22具有多个指状引线23。指状引线的形成经历了：使层压在基带24上的铜箔23b构成预定的图形;然后在待连接的半导体器件突起电极14的图形部位的表面镀上焊剂23a。使指状引线23探入在基带24上所形成器件孔25。将半导体器件21放入器件孔25，用焊剂，通过焊接使各个突起电极14与相应的指状引线23焊接。在半导体器件21的突起电极14与TAB带22的指状引线23相焊接之后，在半导体器件21上灌封保护树脂（未示出），覆盖并保护该半导体器件21，然后沿图2（A）中的虚线所指部位切下。
图3（A）和3（B）表示实施本发明的半导体器件的改型。在图3（A）所示的半导体器件中，当与图1（E）所示的相比时，保护膜7的窗口8的外形比连接电极4大。在图3（B）所示的半导体器件中，当与图1（E）所示的相比时，保护膜7的窗口8的外形比钝化膜5的窗口小。
虽然在上述实施例中突起电极14是由金制作的，但突起电极14可以用焊剂来制成。

Claims (28)

1、一种制造半导体器件的方法，包括下列步骤：
在半导体基片的一个表面上设置连接电极；
形成在所说的基片的一个表面上形成的具有窗口的有机膜，所说的连接电极的至少一部分表面通过所说的窗口露出；
腐蚀所说的连接电极露出的表层；
淀积与所说的连接电极相连接的突出电极；以及
腐蚀所说的有机膜的表层；
2、根据权利要求1的方法，还包括形成在所说的基片的一个表面上形成的具有窗口的无机膜的步骤，所说的连接电极的至少一部分表面通过所说的窗口露出。
3、根据权利要求2的方法，其中所说的在有机膜形成步骤所形成的有机膜的窗口外形比所说的无机膜的窗口大。
4、根据权利要求3的方法，其中在所说的腐蚀连接电极的裸露表面的步骤中进行干腐蚀;在所说的腐蚀有机膜的表面层的步骤中进行干腐蚀。
5、根据权利要求4的方法，其中在所说的腐蚀连接的电极的裸露表层的步骤中;用氩实行干腐蚀，在所说的腐蚀有机膜的表层的步骤中，用氧实行干腐蚀。
6、根据权利要求5的方法，其中所说的有机膜是在所说的有机膜形成步骤中，由树脂制成的。
7、根据权利要求6的方法，其中所说的树脂包括聚酰亚胺。
8、根据权利要求5的方法，其中所说的连接电极是由贱金属在所说的连接电极形成步骤制成的。
9、根据权利要求2的方法，其中在所说的有机膜形成步骤中形成的有机膜的窗口外形比所说的无机膜的窗口小。
10、根据权利要求9的方法，其中在所说的腐蚀连接电极的裸露表层的步骤中实行干腐蚀;在所说的腐蚀有机膜的表层的步骤中实行干腐蚀。
11、根据权利要求10的方法，其中在所说的腐蚀连接电极裸露表层的步骤中，用氩实行干腐蚀;在所说的腐蚀有机膜的表层步骤中，用氧实行干腐蚀。
12、根据权利要求11的方法，其中所说的有机膜是由树脂在所说的有机膜形成步骤中制成的。
13、根据权利要求12的方法，其中所说的有机膜包括聚酰亚胺。
14、根据权利要求11的方法，其中所说的连接电极是由贱金属在所说的连接电极形成步骤制成的。
15、根据权利要求1的方法，其中所说的有机膜形成步骤中形成的有机膜窗口外形比所说的连接电极大。
16、根据权利要求15的方法，其中所说的腐蚀连接电极的裸露表层的步骤中，实行干腐蚀;在所说的腐蚀有机膜的表面层的步骤中实行干腐蚀。
17、根据权利要求16的方法，其中在所说的腐蚀连接电极的裸露表层的步骤中，用氩实行干腐蚀;在所说的腐蚀有机膜表层的步骤中，用氧实行干腐蚀。
18、根据权利要求17的方法，其中所说的有机膜是在所说的有机膜形成步骤中用树脂制成的。
19、根据权利要求18的方法，其中所说的树脂包括聚酰亚胺。
20、根据权利要求16的方法，其中所说的连接电极是在所说的连接电极形成步骤中由贱金属制成的。
21、根据权利要求1的方法，其中在腐蚀连接电极的裸露表层的步骤中，实行干腐蚀;在腐蚀有机膜的表层的步骤中，实行干腐蚀。
22、根据权利要求21的方法，其中在所说的腐蚀连接电极裸露表层的步骤中，用氩实行干腐蚀;在所说的腐蚀有机膜表层的步骤中，用氧实行干腐蚀。
23、根据权利要求22的方法，其中所说的有机膜是在所说的有机膜形成步骤中，由树脂制成的。
24、根据权利要求23的方法，其中所说的树脂包括聚酰亚胺。
25、根据权利要求21的方法，其中所说的连接电极是在连接电极形成步骤中，由贱金属制成的。
26、根据权利要求1的方法，其中所说的有机膜是在所说的有机膜形成步骤中，由树脂制成的。
27、根据权利要求26的方法，其中所说的树脂包括聚酰亚胺。
28、根据权利要求1的方法，其中所说的连接电极是在所说的连接电极形成步骤中，由贱金属制成的。
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JP2698827B2 (ja) * 1993-11-05 1998-01-19 カシオ計算機株式会社 バンプ電極を備えた半導体装置の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100352024C (zh) * 2002-09-24 2007-11-28 须贺唯知 接合装置及接合方法
CN100411220C (zh) * 2005-03-17 2008-08-13 复旦大学 表面嫁接有机共轭分子的半导体材料及其制备方法

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EP0652590B1 (en) 1999-01-13
JP2698827B2 (ja) 1998-01-19
TW368685B (en) 1999-09-01
JPH07130750A (ja) 1995-05-19
DE69415927T2 (de) 1999-05-27
MY112712A (en) 2001-08-30
US5705856A (en) 1998-01-06
KR950015677A (ko) 1995-06-17
DE69415927D1 (de) 1999-02-25
KR0142136B1 (ko) 1998-07-15
EP0652590A1 (en) 1995-05-10
US5538920A (en) 1996-07-23
TW368710B (en) 1999-09-01
CN1042986C (zh) 1999-04-14

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