KR960004076B1 - Forming method of metal line for semiconductor device - Google Patents
Forming method of metal line for semiconductor device Download PDFInfo
- Publication number
- KR960004076B1 KR960004076B1 KR92024295A KR920024295A KR960004076B1 KR 960004076 B1 KR960004076 B1 KR 960004076B1 KR 92024295 A KR92024295 A KR 92024295A KR 920024295 A KR920024295 A KR 920024295A KR 960004076 B1 KR960004076 B1 KR 960004076B1
- Authority
- KR
- South Korea
- Prior art keywords
- forming
- region
- photosensitive film
- bit line
- gate
- Prior art date
Links
- 229910052751 metal Inorganic materials 0.000 title abstract 2
- 239000002184 metal Substances 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title 1
- 238000009792 diffusion process Methods 0.000 abstract 3
- 238000009413 insulation Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 2
- 229910052721 tungsten Inorganic materials 0.000 abstract 2
- 239000010937 tungsten Substances 0.000 abstract 2
- 238000000059 patterning Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
(i) forming a diffusion region(2) on a substrate(1), forming a gate(4) and a bit line(5), which are different in step difference, in an insulation film(3) formed on the substrate(1), and forming contact hole(6) by removing the insulation film(3) located at central regions of the diffusion region(2), the gate(4) and the bit line(5); (ii) forming a contact layer(8) and tungsten layer(9) in turn on the exposed entire surface, and forming a photosensitive film(20) on the surfaces of the diffusion region(2), the gate region(4) and the bit line region(5); and (iii) removing the portions of the contact layer(8) and the tungsten layer(9) excepting the photosensitive film(20) region using the photosensitive film(20) as mask, removing the photosensitive film(20), and patterning a metal(21) on entire surface. The method enhances reliabilities of the contact and via wirings in high step coverage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR92024295A KR960004076B1 (en) | 1992-12-15 | 1992-12-15 | Forming method of metal line for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR92024295A KR960004076B1 (en) | 1992-12-15 | 1992-12-15 | Forming method of metal line for semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR940016485A KR940016485A (en) | 1994-07-23 |
| KR960004076B1 true KR960004076B1 (en) | 1996-03-26 |
Family
ID=19345593
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR92024295A KR960004076B1 (en) | 1992-12-15 | 1992-12-15 | Forming method of metal line for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR960004076B1 (en) |
-
1992
- 1992-12-15 KR KR92024295A patent/KR960004076B1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR940016485A (en) | 1994-07-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| G160 | Decision to publish patent application | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20090223 Year of fee payment: 14 |
|
| LAPS | Lapse due to unpaid annual fee |