TW373309B - Method for forming metal lines of semiconductor device - Google Patents

Method for forming metal lines of semiconductor device

Info

Publication number
TW373309B
TW373309B TW086117926A TW86117926A TW373309B TW 373309 B TW373309 B TW 373309B TW 086117926 A TW086117926 A TW 086117926A TW 86117926 A TW86117926 A TW 86117926A TW 373309 B TW373309 B TW 373309B
Authority
TW
Taiwan
Prior art keywords
forming
insulating layer
metal lines
semiconductor device
contact hole
Prior art date
Application number
TW086117926A
Other languages
Chinese (zh)
Inventor
Cheol-Soo Park
Dae-Young Kim
Original Assignee
Hyundai Electronics Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1019960067437A external-priority patent/KR100245091B1/en
Priority claimed from KR1019960067436A external-priority patent/KR19980048790A/en
Priority claimed from KR1019960067438A external-priority patent/KR100224777B1/en
Application filed by Hyundai Electronics Ind filed Critical Hyundai Electronics Ind
Application granted granted Critical
Publication of TW373309B publication Critical patent/TW373309B/en

Links

Abstract

The present invention relates to a method of forming metal lines of a semiconductor device, which is designed to lessen the distance between the adjacent metal lines and includes the steps of: forming a first insulating layer on a semiconductor substrate; forming first and second contact holes in the first insulating layer so as to bury the first and second contact holes; pattern the first metal layer, forming a first metal line on the first contact hole and its neighboring first insulating layer; and a contact plug in the second contact hole; forming a second insulating layer on the first insulating layer including the first metal line; forming a third contact hole, exposing the contact plug, on the second insulating layer by a known method; and forming a second metal line on the third contact hole and its neighboring second insulating layer.
TW086117926A 1996-12-18 1997-11-28 Method for forming metal lines of semiconductor device TW373309B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1019960067437A KR100245091B1 (en) 1996-12-18 1996-12-18 Process for forming interconnector of semiconductor device
KR1019960067436A KR19980048790A (en) 1996-12-18 1996-12-18 Metal contact and line formation method of semiconductor device
KR1019960067438A KR100224777B1 (en) 1996-12-18 1996-12-18 Method of forming contact and line of semiconductor device

Publications (1)

Publication Number Publication Date
TW373309B true TW373309B (en) 1999-11-01

Family

ID=27349445

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086117926A TW373309B (en) 1996-12-18 1997-11-28 Method for forming metal lines of semiconductor device

Country Status (2)

Country Link
JP (1) JP3225289B2 (en)
TW (1) TW373309B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6132110A (en) * 1997-04-01 2000-10-17 Olympus Optical Co., Ltd. Pivotally mounted lens cover for a moveable lens barrel capable of being separated from the lens barrel upon the occurrence of an external force to protect the coupling mechanism from breakage

Also Published As

Publication number Publication date
JPH10326832A (en) 1998-12-08
JP3225289B2 (en) 2001-11-05

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees