KR970000959B1 - Contact plug forming method of semiconductor device - Google Patents
Contact plug forming method of semiconductor device Download PDFInfo
- Publication number
- KR970000959B1 KR970000959B1 KR93028113A KR930028113A KR970000959B1 KR 970000959 B1 KR970000959 B1 KR 970000959B1 KR 93028113 A KR93028113 A KR 93028113A KR 930028113 A KR930028113 A KR 930028113A KR 970000959 B1 KR970000959 B1 KR 970000959B1
- Authority
- KR
- South Korea
- Prior art keywords
- contact
- contact hole
- forming method
- semiconductor device
- contact plug
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 4
- 239000004065 semiconductor Substances 0.000 title 1
- 239000002184 metal Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- 239000011229 interlayer Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
A contact forming method using selective metal filled in contact holes is disclosed. The method comprises the steps of: selective etching an interlayer insulator(3) using a photoresist pattern(4) in order to form a contact hole(5); forming a silicon-rich layer(7) at both side walls of the contact hole(5) by implanting 85SiF3+3 having projected range property; and filling the contact hole(5) using selective metal growing method. Thereby, it is possible to improve a step coverage and uniformity of contact topology by preventing an over-filing in the shallow contact hole.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR93028113A KR970000959B1 (en) | 1993-12-16 | 1993-12-16 | Contact plug forming method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR93028113A KR970000959B1 (en) | 1993-12-16 | 1993-12-16 | Contact plug forming method of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
KR950021151A KR950021151A (en) | 1995-07-26 |
KR970000959B1 true KR970000959B1 (en) | 1997-01-21 |
Family
ID=19371337
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR93028113A KR970000959B1 (en) | 1993-12-16 | 1993-12-16 | Contact plug forming method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR970000959B1 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20020068844A (en) * | 2001-02-23 | 2002-08-28 | 박병국 | Method for forming ultra-fine patterns using sidewalls and selective oxidation |
-
1993
- 1993-12-16 KR KR93028113A patent/KR970000959B1/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR950021151A (en) | 1995-07-26 |
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Legal Events
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A201 | Request for examination | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20101224 Year of fee payment: 15 |
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LAPS | Lapse due to unpaid annual fee |