KR970000959B1 - Contact plug forming method of semiconductor device - Google Patents

Contact plug forming method of semiconductor device Download PDF

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Publication number
KR970000959B1
KR970000959B1 KR93028113A KR930028113A KR970000959B1 KR 970000959 B1 KR970000959 B1 KR 970000959B1 KR 93028113 A KR93028113 A KR 93028113A KR 930028113 A KR930028113 A KR 930028113A KR 970000959 B1 KR970000959 B1 KR 970000959B1
Authority
KR
South Korea
Prior art keywords
contact
contact hole
forming method
semiconductor device
contact plug
Prior art date
Application number
KR93028113A
Other languages
Korean (ko)
Other versions
KR950021151A (en
Inventor
Dong-Sun Shin
Keum-Joo Na
Yong-Kook Ahn
Original Assignee
Hyundai Electronics Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Ind filed Critical Hyundai Electronics Ind
Priority to KR93028113A priority Critical patent/KR970000959B1/en
Publication of KR950021151A publication Critical patent/KR950021151A/en
Application granted granted Critical
Publication of KR970000959B1 publication Critical patent/KR970000959B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

A contact forming method using selective metal filled in contact holes is disclosed. The method comprises the steps of: selective etching an interlayer insulator(3) using a photoresist pattern(4) in order to form a contact hole(5); forming a silicon-rich layer(7) at both side walls of the contact hole(5) by implanting 85SiF3+3 having projected range property; and filling the contact hole(5) using selective metal growing method. Thereby, it is possible to improve a step coverage and uniformity of contact topology by preventing an over-filing in the shallow contact hole.
KR93028113A 1993-12-16 1993-12-16 Contact plug forming method of semiconductor device KR970000959B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR93028113A KR970000959B1 (en) 1993-12-16 1993-12-16 Contact plug forming method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR93028113A KR970000959B1 (en) 1993-12-16 1993-12-16 Contact plug forming method of semiconductor device

Publications (2)

Publication Number Publication Date
KR950021151A KR950021151A (en) 1995-07-26
KR970000959B1 true KR970000959B1 (en) 1997-01-21

Family

ID=19371337

Family Applications (1)

Application Number Title Priority Date Filing Date
KR93028113A KR970000959B1 (en) 1993-12-16 1993-12-16 Contact plug forming method of semiconductor device

Country Status (1)

Country Link
KR (1) KR970000959B1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020068844A (en) * 2001-02-23 2002-08-28 박병국 Method for forming ultra-fine patterns using sidewalls and selective oxidation

Also Published As

Publication number Publication date
KR950021151A (en) 1995-07-26

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