TW362292B - GaN related compound semiconductor and process for producing the same - Google Patents

GaN related compound semiconductor and process for producing the same

Info

Publication number
TW362292B
TW362292B TW086118064A TW86118064A TW362292B TW 362292 B TW362292 B TW 362292B TW 086118064 A TW086118064 A TW 086118064A TW 86118064 A TW86118064 A TW 86118064A TW 362292 B TW362292 B TW 362292B
Authority
TW
Taiwan
Prior art keywords
light
layer
producing
same
compound semiconductor
Prior art date
Application number
TW086118064A
Other languages
English (en)
Inventor
Toshiya Uemura
Naoki Shibata
Shizuyo Noiri
Masanori Murakami
Yasuo Koide
Ito Jun
Original Assignee
Toyota Gosei Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP33495696A external-priority patent/JP3309745B2/ja
Priority claimed from JP1974897A external-priority patent/JP3344257B2/ja
Priority claimed from JP4706497A external-priority patent/JP3309756B2/ja
Application filed by Toyota Gosei Co Ltd filed Critical Toyota Gosei Co Ltd
Application granted granted Critical
Publication of TW362292B publication Critical patent/TW362292B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
TW086118064A 1996-11-29 1997-11-29 GaN related compound semiconductor and process for producing the same TW362292B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP33495696A JP3309745B2 (ja) 1996-11-29 1996-11-29 ＧａＮ系化合物半導体発光素子及びその製造方法
JP1974897A JP3344257B2 (ja) 1997-01-17 1997-01-17 窒化ガリウム系化合物半導体及び素子の製造方法
JP4706497A JP3309756B2 (ja) 1997-02-14 1997-02-14 窒化ガリウム系化合物半導体素子

Publications (1)

Publication Number Publication Date
TW362292B true TW362292B (en) 1999-06-21

Family

ID=27282757

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086118064A TW362292B (en) 1996-11-29 1997-11-29 GaN related compound semiconductor and process for producing the same

Country Status (6)

Country Link
US (3) US6291840B1 (zh)
EP (2) EP0845818B1 (zh)
KR (4) KR100338452B1 (zh)
CN (2) CN1271681C (zh)
DE (1) DE69718999T2 (zh)
TW (1) TW362292B (zh)

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100459889B1 (ko) * 1999-02-11 2004-12-03 삼성전자주식회사 반도체/금속 접합방법
US6287947B1 (en) 1999-06-08 2001-09-11 Lumileds Lighting, U.S. Llc Method of forming transparent contacts to a p-type GaN layer
US6133589A (en) 1999-06-08 2000-10-17 Lumileds Lighting, U.S., Llc AlGaInN-based LED having thick epitaxial layer for improved light extraction
JP2001053339A (ja) * 1999-08-11 2001-02-23 Toshiba Corp 半導体発光素子およびその製造方法
JP4026294B2 (ja) * 2000-03-07 2007-12-26 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子の製造方法
CN1333467C (zh) * 2000-09-13 2007-08-22 晶元光电股份有限公司 白色发光二极管
US20050100560A1 (en) 2000-09-21 2005-05-12 Kao Corporation Hair cosmetic compositions
WO2002031865A1 (en) * 2000-10-13 2002-04-18 Emcore Corporation Method of making an electrode
JP2002335048A (ja) * 2001-03-06 2002-11-22 Sony Corp 窒化物系半導体レーザ素子及びその製造方法
JP3812366B2 (ja) * 2001-06-04 2006-08-23 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子の製造方法
US6537838B2 (en) 2001-06-11 2003-03-25 Limileds Lighting, U.S., Llc Forming semiconductor structures including activated acceptors in buried p-type III-V layers
US7029939B2 (en) * 2001-06-18 2006-04-18 Toyoda Gosei Co., Ltd. P-type semiconductor manufacturing method and semiconductor device
JP3622200B2 (ja) * 2001-07-02 2005-02-23 ソニー株式会社 窒化物半導体の製造方法および半導体素子の製造方法
US6744075B2 (en) 2001-09-17 2004-06-01 Sanyo Electric Co., Ltd. Nitride-based semiconductor light-emitting device and method of forming the same
US7148520B2 (en) * 2001-10-26 2006-12-12 Lg Electronics Inc. Diode having vertical structure and method of manufacturing the same
TWI295483B (en) * 2002-01-31 2008-04-01 Sumitomo Chemical Co 3-5 group compound semiconductor, process for producing the same, and compound semiconductor element using the same
KR100491968B1 (ko) * 2002-03-25 2005-05-27 학교법인 포항공과대학교 갈륨나이트라이드계 광소자의 ｐ형 오믹 전극의 제조방법
US8294172B2 (en) * 2002-04-09 2012-10-23 Lg Electronics Inc. Method of fabricating vertical devices using a metal support film
US6665329B1 (en) * 2002-06-06 2003-12-16 Sandia Corporation Broadband visible light source based on AllnGaN light emitting diodes
US6841802B2 (en) 2002-06-26 2005-01-11 Oriol, Inc. Thin film light emitting diode
JP2004047662A (ja) * 2002-07-11 2004-02-12 Rohm Co Ltd 半導体発光素子
US7112825B2 (en) * 2002-07-11 2006-09-26 Rohm Co., Ltd. Semiconductor light emitting device
KR100519753B1 (ko) * 2002-11-15 2005-10-07 삼성전기주식회사 ＧａＮ계 화합물 반도체가 사용된 발광소자의 제조방법
EP1450414A3 (en) * 2003-02-19 2008-12-24 Nichia Corporation Nitride semiconductor device
DE10350707B4 (de) * 2003-02-26 2014-02-13 Osram Opto Semiconductors Gmbh Elektrischer Kontakt für optoelektronischen Halbleiterchip und Verfahren zu dessen Herstellung
TWI243488B (en) * 2003-02-26 2005-11-11 Osram Opto Semiconductors Gmbh Electrical contact-area for optoelectronic semiconductor-chip and its production method
KR100826424B1 (ko) * 2003-04-21 2008-04-29 삼성전기주식회사 반도체 발광 다이오드 및 그 제조방법
KR100586943B1 (ko) * 2003-12-26 2006-06-07 삼성전기주식회사 질화갈륨계 반도체 발광소자의 제조방법
TWI281758B (en) * 2004-04-28 2007-05-21 Showa Denko Kk Transparent positive electrode
US7557380B2 (en) 2004-07-27 2009-07-07 Cree, Inc. Light emitting devices having a reflective bond pad and methods of fabricating light emitting devices having reflective bond pads
JP4101823B2 (ja) * 2005-06-13 2008-06-18 株式会社東芝 半導体素子、電極形成方法及び半導体素子の製造方法
JP5148061B2 (ja) * 2005-08-24 2013-02-20 出光興産株式会社 照明装置用ハウジング構造体、およびその製造方法、該構造体を用いたバックライト装置
JP5232969B2 (ja) * 2006-03-23 2013-07-10 豊田合成株式会社 窒化ガリウム系化合物半導体発光素子の製造方法
US7501295B2 (en) * 2006-05-25 2009-03-10 Philips Lumileds Lighting Company, Llc Method of fabricating a reflective electrode for a semiconductor light emitting device
DE102007018307A1 (de) * 2007-01-26 2008-07-31 Osram Opto Semiconductors Gmbh Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips
JP4954039B2 (ja) * 2007-11-29 2012-06-13 三菱電機株式会社 半導体装置の製造方法
JP2009152356A (ja) * 2007-12-20 2009-07-09 Mitsubishi Electric Corp 窒化物半導体装置とその製造方法
JP2009158745A (ja) * 2007-12-27 2009-07-16 Mitsubishi Electric Corp 半導体装置の製造方法
DE102008032318A1 (de) * 2008-03-31 2009-10-01 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines solchen
JPWO2009147774A1 (ja) * 2008-06-05 2011-10-20 パナソニック株式会社 半導体装置
KR101038836B1 (ko) 2008-10-21 2011-06-03 삼성엘이디 주식회사 질화계 이종접합 전계효과 트랜지스터 제조방법
US20100327300A1 (en) * 2009-06-25 2010-12-30 Koninklijke Philips Electronics N.V. Contact for a semiconductor light emitting device
US8877034B2 (en) * 2009-12-30 2014-11-04 Lifescan, Inc. Systems, devices, and methods for measuring whole blood hematocrit based on initial fill velocity
US20120052679A1 (en) * 2010-08-31 2012-03-01 Wenting Hou Method of Fabricating an Ohmic contact to n-type Gallium Nitride
US20140004435A1 (en) * 2011-05-16 2014-01-02 Panasonic Corporation Photoelectrode and method for producing same, photoelectrochemical cell and energy system using same, and hydrogen generation method
KR20130023069A (ko) * 2011-08-24 2013-03-07 울트라테크 인크. ＧａＮ ＬＥＤ 및 이것의 고속 열 어닐링 방법
KR20140048071A (ko) 2011-09-12 2014-04-23 미쓰비시 가가꾸 가부시키가이샤 발광 다이오드 소자
JP5729335B2 (ja) 2012-03-19 2015-06-03 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子およびその製造方法
JP6070526B2 (ja) * 2013-12-11 2017-02-01 豊田合成株式会社 半導体装置の製造方法
WO2016158651A1 (ja) * 2015-03-30 2016-10-06 東ソー株式会社 窒化ガリウム系焼結体及びその製造方法
CN106025013A (zh) * 2016-07-28 2016-10-12 合肥彩虹蓝光科技有限公司 一种高亮度led芯片的制备方法

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4701035A (en) * 1984-08-14 1987-10-20 Canon Kabushiki Kaisha Reflection optical system
JPH02129919A (ja) 1988-11-10 1990-05-18 Mitsui Toatsu Chem Inc ウエハ加工用フィルム
JPH069258B2 (ja) 1989-03-30 1994-02-02 名古屋大学長 窒化ガリウム系化合物半導体発光素子の作製方法
JP2540791B2 (ja) 1991-11-08 1996-10-09 日亜化学工業株式会社 ｐ型窒化ガリウム系化合物半導体の製造方法。
US5306662A (en) 1991-11-08 1994-04-26 Nichia Chemical Industries, Ltd. Method of manufacturing P-type compound semiconductor
JP2778349B2 (ja) 1992-04-10 1998-07-23 日亜化学工業株式会社 窒化ガリウム系化合物半導体の電極
JP2803742B2 (ja) 1993-04-28 1998-09-24 日亜化学工業株式会社 窒化ガリウム系化合物半導体発光素子及びその電極形成方法
DE69433926T2 (de) * 1993-04-28 2005-07-21 Nichia Corp., Anan Halbleitervorrichtung aus einer galliumnitridartigen III-V-Halbleiterverbindung
US5656832A (en) * 1994-03-09 1997-08-12 Kabushiki Kaisha Toshiba Semiconductor heterojunction device with ALN buffer layer of 3nm-10nm average film thickness
JP3325380B2 (ja) 1994-03-09 2002-09-17 株式会社東芝 半導体発光素子およびその製造方法
JPH085500A (ja) 1994-06-15 1996-01-12 Shimadzu Corp リークテスト装置
JPH0832115A (ja) 1994-07-19 1996-02-02 Sharp Corp 電極構造およびその製造方法
US5585300A (en) * 1994-08-01 1996-12-17 Texas Instruments Incorporated Method of making conductive amorphous-nitride barrier layer for high-dielectric-constant material electrodes
JPH0851235A (ja) 1994-08-09 1996-02-20 Rohm Co Ltd 半導体発光素子の製法
US5740192A (en) * 1994-12-19 1998-04-14 Kabushiki Kaisha Toshiba Semiconductor laser
JPH08250768A (ja) 1995-03-13 1996-09-27 Toyoda Gosei Co Ltd 半導体光素子
US5764842A (en) * 1995-03-23 1998-06-09 Hitachi, Ltd. Semiconductor guided-wave optical device and method of fabricating thereof
JP3620926B2 (ja) * 1995-06-16 2005-02-16 豊田合成株式会社 ｐ伝導形３族窒化物半導体の電極及び電極形成方法及び素子
WO1997008759A1 (fr) 1995-08-31 1997-03-06 Kabushiki Kaisha Toshiba Dispositif emetteur de lumiere bleue et son procede de fabrication
JP3009095B2 (ja) * 1995-10-27 2000-02-14 日亜化学工業株式会社 窒化物半導体発光素子
JP3269070B2 (ja) * 1995-10-30 2002-03-25 日亜化学工業株式会社 窒化物半導体発光素子
US6121127A (en) * 1996-06-14 2000-09-19 Toyoda Gosei Co., Ltd. Methods and devices related to electrodes for p-type group III nitride compound semiconductors
JP3309756B2 (ja) * 1997-02-14 2002-07-29 豊田合成株式会社 窒化ガリウム系化合物半導体素子
JP3344257B2 (ja) * 1997-01-17 2002-11-11 豊田合成株式会社 窒化ガリウム系化合物半導体及び素子の製造方法
JPH10233529A (ja) * 1997-02-14 1998-09-02 Hewlett Packard Co <Hp> 窒化物半導体素子およびその製造方法
US6268618B1 (en) * 1997-05-08 2001-07-31 Showa Denko K.K. Electrode for light-emitting semiconductor devices and method of producing the electrode
JP3606015B2 (ja) * 1997-07-23 2005-01-05 豊田合成株式会社 ３族窒化物半導体素子の製造方法
JP3130292B2 (ja) * 1997-10-14 2001-01-31 松下電子工業株式会社 半導体発光装置及びその製造方法
JP4183299B2 (ja) * 1998-03-25 2008-11-19 株式会社東芝 窒化ガリウム系化合物半導体発光素子
JPH11310498A (ja) * 1998-04-28 1999-11-09 Kyocera Corp 成膜用基板
JP2000019581A (ja) * 1998-07-03 2000-01-21 Minolta Co Ltd プログラムａｅカメラ
JP3794876B2 (ja) * 1998-09-09 2006-07-12 松下電器産業株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
KR100456656B1 (ko) 2004-11-10
DE69718999T2 (de) 2004-01-22
EP1251567A3 (en) 2005-03-02
US6500689B2 (en) 2002-12-31
EP0845818A2 (en) 1998-06-03
CN1189701A (zh) 1998-08-05
US6573117B2 (en) 2003-06-03
US6291840B1 (en) 2001-09-18
CN1553478A (zh) 2004-12-08
CN1271681C (zh) 2006-08-23
EP0845818B1 (en) 2003-02-12
US20010018226A1 (en) 2001-08-30
KR100338452B1 (ko) 2002-11-23
EP0845818A3 (en) 1998-10-07
KR100416170B1 (ko) 2004-01-31
EP1251567A2 (en) 2002-10-23
KR19980042947A (ko) 1998-08-17
US20020072204A1 (en) 2002-06-13
KR100436102B1 (ko) 2004-06-14
DE69718999D1 (de) 2003-03-20
CN1150632C (zh) 2004-05-19

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