TW200917354A - Substrate dividing method - Google Patents

Substrate dividing method Download PDF

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Publication number
TW200917354A
TW200917354A TW097138521A TW97138521A TW200917354A TW 200917354 A TW200917354 A TW 200917354A TW 097138521 A TW097138521 A TW 097138521A TW 97138521 A TW97138521 A TW 97138521A TW 200917354 A TW200917354 A TW 200917354A
Authority
TW
Taiwan
Prior art keywords
substrate
dividing
individual
wafer
line
Prior art date
Application number
TW097138521A
Other languages
English (en)
Chinese (zh)
Inventor
Yuichi Taguchi
Akinori Shiraishi
Masahiro Sunohara
Kei Murayama
Hideaki Sakaguchi
Mitsutoshi Higashi
Original Assignee
Shinko Electric Ind Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinko Electric Ind Co filed Critical Shinko Electric Ind Co
Publication of TW200917354A publication Critical patent/TW200917354A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/693—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0044—Mechanical working of the substrate, e.g. drilling or punching
    • H05K3/0052—Depaneling, i.e. dividing a panel into circuit boards; Working of the edges of circuit boards
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09009—Substrate related
    • H05K2201/09027—Non-rectangular flat PCB, e.g. circular
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09009—Substrate related
    • H05K2201/09036—Recesses or grooves in insulating substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09009—Substrate related
    • H05K2201/09063—Holes or slots in insulating substrate not used for electrical connections
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09009—Substrate related
    • H05K2201/0909—Preformed cutting or breaking line
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/30—Details of processes not otherwise provided for in H05K2203/01 - H05K2203/17
    • H05K2203/302—Bending a rigid substrate; Breaking rigid substrates by bending
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0017—Etching of the substrate by chemical or physical means
    • H05K3/0026—Etching of the substrate by chemical or physical means by laser ablation
    • H05K3/0029—Etching of the substrate by chemical or physical means by laser ablation of inorganic insulating material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0097—Processing two or more printed circuits simultaneously, e.g. made from a common substrate, or temporarily stacked circuit boards

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Dicing (AREA)
TW097138521A 2007-10-15 2008-10-07 Substrate dividing method TW200917354A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007268123A JP2009099681A (ja) 2007-10-15 2007-10-15 基板の個片化方法

Publications (1)

Publication Number Publication Date
TW200917354A true TW200917354A (en) 2009-04-16

Family

ID=40297938

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097138521A TW200917354A (en) 2007-10-15 2008-10-07 Substrate dividing method

Country Status (5)

Country Link
US (1) US20090098712A1 (https=)
EP (1) EP2051297A3 (https=)
JP (1) JP2009099681A (https=)
KR (1) KR20090038358A (https=)
TW (1) TW200917354A (https=)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8962362B2 (en) 2009-11-05 2015-02-24 Wavesquare Inc. Vertically structured group III nitride semiconductor LED chip and method for manufacturing the same
TWI548478B (zh) * 2010-07-21 2016-09-11 ３Ｄ 麥可梅克公司 借助於雷射將由易脆裂的材料製成的圓的平板分割成多個矩形單板的方法
US9502603B2 (en) 2011-05-12 2016-11-22 Wavesquare Inc. Vertically structured group III nitride semiconductor LED chip and method for manufacturing the same
CN111390399A (zh) * 2020-03-12 2020-07-10 上海柏楚电子科技股份有限公司 基于冷却点的切割控制方法、系统、电子设备与介质
TWI704032B (zh) * 2014-12-04 2020-09-11 日商日本電氣硝子股份有限公司 玻璃板、積層體、半導體封裝及其製造方法、電子機器
US11367655B2 (en) 2017-04-18 2022-06-21 Hamamatsu Photonics K.K. Forming openings at intersection of cutting lines

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4924681B2 (ja) * 2009-09-10 2012-04-25 住友電気工業株式会社 Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法
JP5281545B2 (ja) * 2009-11-04 2013-09-04 スタンレー電気株式会社 半導体発光素子の製造方法
JP5131266B2 (ja) * 2009-12-25 2013-01-30 住友電気工業株式会社 Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法
US9165833B2 (en) 2010-01-18 2015-10-20 Semiconductor Components Industries, Llc Method of forming a semiconductor die
JP4793494B2 (ja) 2010-01-18 2011-10-12 住友電気工業株式会社 Ｉｉｉ族窒化物半導体レーザ素子を作製する方法
US8378458B2 (en) * 2010-03-22 2013-02-19 Advanced Micro Devices, Inc. Semiconductor chip with a rounded corner
JP2012059859A (ja) * 2010-09-08 2012-03-22 Disco Abrasive Syst Ltd 半導体デバイス
JP6024076B2 (ja) * 2011-01-13 2016-11-09 セイコーエプソン株式会社 シリコンデバイスの製造方法
JP2012227306A (ja) * 2011-04-19 2012-11-15 Ngk Insulators Ltd セラミック基板の製造方法
JP2011216914A (ja) * 2011-07-27 2011-10-27 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法
US8940618B2 (en) * 2012-03-13 2015-01-27 Taiwan Semiconductor Manufacturing Company, Ltd. Method and device for cutting semiconductor wafers
JP6060509B2 (ja) * 2012-03-29 2017-01-18 大日本印刷株式会社 半導体素子の製造方法
JP6050613B2 (ja) * 2012-06-12 2016-12-21 新電元工業株式会社 半導体ウェーハ、半導体装置の製造方法及び半導体装置
GB201307773D0 (en) * 2013-04-30 2013-06-12 Atlantic Inertial Systems Ltd MEMS sensors
US9728518B2 (en) 2014-04-01 2017-08-08 Ati Technologies Ulc Interconnect etch with polymer layer edge protection
JP6336895B2 (ja) * 2014-11-28 2018-06-06 シチズンファインデバイス株式会社 基板および基板の製造方法
GB2534204A (en) * 2015-01-17 2016-07-20 Melexis Technologies Nv Semiconductor device with at least one truncated corner and/or side cut-out
JP5763858B2 (ja) * 2015-02-13 2015-08-12 ビービーエスエイ リミテッドＢＢＳＡ Ｌｉｍｉｔｅｄ Ｉｉｉ族窒化物半導体縦型構造ｌｅｄチップの製造方法
DE112015006331T5 (de) * 2015-03-19 2017-12-14 Osram Opto Semiconductors Gmbh Fenster zum Bedecken eines optoelektronischen Halbleiterchips, mehrere Fenster umfassende Scheibe, Verfahren zur Herstellung von Fenstern und optoelektronisches Halbleiterbauelement
JP2017073424A (ja) * 2015-10-05 2017-04-13 日本特殊陶業株式会社 配線基板及びその製造方法
JP6579981B2 (ja) * 2016-03-11 2019-09-25 三菱電機株式会社 半導体ウエハおよびその製造方法
US20180015569A1 (en) * 2016-07-18 2018-01-18 Nanya Technology Corporation Chip and method of manufacturing chips
WO2018020793A1 (ja) * 2016-07-26 2018-02-01 ソニーセミコンダクタソリューションズ株式会社 半導体発光素子および半導体発光素子の製造方法
JP2018046094A (ja) * 2016-09-13 2018-03-22 エイブリック株式会社 半導体チップ、半導体装置、半導体ウェハ、及び半導体ウェハのダイシング方法
CN108206161B (zh) * 2016-12-20 2020-06-02 晟碟半导体（上海）有限公司 包含角部凹陷的半导体装置
KR101925565B1 (ko) * 2016-12-30 2018-12-06 (재)한국나노기술원 갈라짐 패턴을 이용한 에피층 분리 방법
JP2018109716A (ja) * 2017-01-05 2018-07-12 ソニーセミコンダクタソリューションズ株式会社 レンズモジュールおよびレンズモジュールの製造方法、撮像装置、並びに電子機器
EP3361839A1 (en) * 2017-02-14 2018-08-15 Infineon Technologies AG Multiple substrate and method for its fabrication
JP6384934B2 (ja) * 2017-06-20 2018-09-05 住友電工デバイス・イノベーション株式会社 半導体装置の製造方法
US10699973B2 (en) 2017-11-06 2020-06-30 GLOBALFOUNDERS Inc. Semiconductor test structure and method for forming the same
JP6950484B2 (ja) * 2017-11-20 2021-10-13 沖電気工業株式会社 半導体素子、発光基板、光プリントヘッド、画像形成装置
JP7193920B2 (ja) * 2018-03-09 2022-12-21 株式会社ディスコ パッケージ基板の加工方法
CN111430229B (zh) * 2020-04-28 2023-12-01 长江存储科技有限责任公司 切割方法
DE102020215554A1 (de) 2020-12-09 2022-06-09 Robert Bosch Gesellschaft mit beschränkter Haftung Substratscheibe, Verfahren zum Herstellen einer Substratscheibe und Verfahren zum Herstellen einer Mehrzahl von Bauelementen
KR20220164887A (ko) * 2021-06-07 2022-12-14 삼성전자주식회사 반도체 칩 및 제조 방법
JP2023004854A (ja) * 2021-06-25 2023-01-17 キヤノン株式会社 半導体装置及びその製造方法
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CN115870641B (zh) * 2023-02-20 2023-05-23 湖北三维半导体集成创新中心有限责任公司 一种芯片及其制造方法、封装结构
JP2024131226A (ja) * 2023-03-15 2024-09-30 株式会社東芝 半導体装置、半導体モジュールおよび半導体装置の製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5888884A (en) * 1998-01-02 1999-03-30 General Electric Company Electronic device pad relocation, precision placement, and packaging in arrays
JP4542789B2 (ja) * 2003-01-10 2010-09-15 株式会社東芝 半導体装置の製造装置及びその製造方法
JP4515790B2 (ja) * 2004-03-08 2010-08-04 株式会社東芝 半導体装置の製造方法及びその製造装置
US7211500B2 (en) * 2004-09-27 2007-05-01 United Microelectronics Corp. Pre-process before cutting a wafer and method of cutting a wafer
JP2006173428A (ja) * 2004-12-17 2006-06-29 Seiko Epson Corp 基板加工方法及び素子製造方法
JP4716819B2 (ja) 2005-08-22 2011-07-06 新光電気工業株式会社 インターポーザの製造方法
KR100772016B1 (ko) * 2006-07-12 2007-10-31 삼성전자주식회사 반도체 칩 및 그 형성 방법
US7648891B2 (en) * 2006-12-22 2010-01-19 International Business Machines Corporation Semiconductor chip shape alteration

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8962362B2 (en) 2009-11-05 2015-02-24 Wavesquare Inc. Vertically structured group III nitride semiconductor LED chip and method for manufacturing the same
US9012935B2 (en) 2009-11-05 2015-04-21 Wavesquare Inc. Vertically structured group III nitride semiconductor LED chip and method for manufacturing the same
CN102687288B (zh) * 2009-11-05 2016-04-06 Bbsa有限公司 第iii族氮化物半导体纵向结构led芯片及其制造方法
TWI548478B (zh) * 2010-07-21 2016-09-11 ３Ｄ 麥可梅克公司 借助於雷射將由易脆裂的材料製成的圓的平板分割成多個矩形單板的方法
US9502603B2 (en) 2011-05-12 2016-11-22 Wavesquare Inc. Vertically structured group III nitride semiconductor LED chip and method for manufacturing the same
TWI704032B (zh) * 2014-12-04 2020-09-11 日商日本電氣硝子股份有限公司 玻璃板、積層體、半導體封裝及其製造方法、電子機器
US11367655B2 (en) 2017-04-18 2022-06-21 Hamamatsu Photonics K.K. Forming openings at intersection of cutting lines
TWI771379B (zh) * 2017-04-18 2022-07-21 日商濱松赫德尼古斯股份有限公司 晶片之製造方法及矽晶片
CN111390399A (zh) * 2020-03-12 2020-07-10 上海柏楚电子科技股份有限公司 基于冷却点的切割控制方法、系统、电子设备与介质
CN111390399B (zh) * 2020-03-12 2022-02-15 上海柏楚电子科技股份有限公司 基于冷却点的切割控制方法、系统、电子设备与介质

Also Published As

Publication number Publication date
KR20090038358A (ko) 2009-04-20
EP2051297A2 (en) 2009-04-22
EP2051297A3 (en) 2011-01-26
JP2009099681A (ja) 2009-05-07
US20090098712A1 (en) 2009-04-16

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