KR20090038358A - 기판 개편화 방법 - Google Patents

기판 개편화 방법 Download PDF

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Publication number
KR20090038358A
KR20090038358A KR1020080093980A KR20080093980A KR20090038358A KR 20090038358 A KR20090038358 A KR 20090038358A KR 1020080093980 A KR1020080093980 A KR 1020080093980A KR 20080093980 A KR20080093980 A KR 20080093980A KR 20090038358 A KR20090038358 A KR 20090038358A
Authority
KR
South Korea
Prior art keywords
substrate
silicon substrate
hole
silicon
individual pieces
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020080093980A
Other languages
English (en)
Korean (ko)
Inventor
유이치 다구치
아키노리 시라이시
마사히로 스노하라
게이 무라야마
히데아키 사카구치
미츠토시 히가시
Original Assignee
신꼬오덴기 고교 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 신꼬오덴기 고교 가부시키가이샤 filed Critical 신꼬오덴기 고교 가부시키가이샤
Publication of KR20090038358A publication Critical patent/KR20090038358A/ko
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/693—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0044—Mechanical working of the substrate, e.g. drilling or punching
    • H05K3/0052—Depaneling, i.e. dividing a panel into circuit boards; Working of the edges of circuit boards
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09009—Substrate related
    • H05K2201/09027—Non-rectangular flat PCB, e.g. circular
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09009—Substrate related
    • H05K2201/09036—Recesses or grooves in insulating substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09009—Substrate related
    • H05K2201/09063—Holes or slots in insulating substrate not used for electrical connections
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09009—Substrate related
    • H05K2201/0909—Preformed cutting or breaking line
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/30—Details of processes not otherwise provided for in H05K2203/01 - H05K2203/17
    • H05K2203/302—Bending a rigid substrate; Breaking rigid substrates by bending
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0017—Etching of the substrate by chemical or physical means
    • H05K3/0026—Etching of the substrate by chemical or physical means by laser ablation
    • H05K3/0029—Etching of the substrate by chemical or physical means by laser ablation of inorganic insulating material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0097—Processing two or more printed circuits simultaneously, e.g. made from a common substrate, or temporarily stacked circuit boards

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Dicing (AREA)
KR1020080093980A 2007-10-15 2008-09-25 기판 개편화 방법 Withdrawn KR20090038358A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007268123A JP2009099681A (ja) 2007-10-15 2007-10-15 基板の個片化方法
JPJP-P-2007-00268123 2007-10-15

Publications (1)

Publication Number Publication Date
KR20090038358A true KR20090038358A (ko) 2009-04-20

Family

ID=40297938

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020080093980A Withdrawn KR20090038358A (ko) 2007-10-15 2008-09-25 기판 개편화 방법

Country Status (5)

Country Link
US (1) US20090098712A1 (https=)
EP (1) EP2051297A3 (https=)
JP (1) JP2009099681A (https=)
KR (1) KR20090038358A (https=)
TW (1) TW200917354A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190142317A (ko) * 2017-04-18 2019-12-26 하마마츠 포토닉스 가부시키가이샤 칩의 제조 방법, 및 실리콘 칩

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JP4924681B2 (ja) * 2009-09-10 2012-04-25 住友電気工業株式会社 Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法
JP5281545B2 (ja) * 2009-11-04 2013-09-04 スタンレー電気株式会社 半導体発光素子の製造方法
US8962362B2 (en) 2009-11-05 2015-02-24 Wavesquare Inc. Vertically structured group III nitride semiconductor LED chip and method for manufacturing the same
JP5131266B2 (ja) * 2009-12-25 2013-01-30 住友電気工業株式会社 Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法
US9165833B2 (en) 2010-01-18 2015-10-20 Semiconductor Components Industries, Llc Method of forming a semiconductor die
JP4793494B2 (ja) 2010-01-18 2011-10-12 住友電気工業株式会社 Ｉｉｉ族窒化物半導体レーザ素子を作製する方法
US8378458B2 (en) * 2010-03-22 2013-02-19 Advanced Micro Devices, Inc. Semiconductor chip with a rounded corner
DE102010032029B4 (de) * 2010-07-21 2012-09-13 Jenoptik Automatisierungstechnik Gmbh Verfahren zum Trennen einer runden Planplatte aus sprödbrüchigem Material in mehrere rechteckige Einzelplatten mittels Laser
JP2012059859A (ja) * 2010-09-08 2012-03-22 Disco Abrasive Syst Ltd 半導体デバイス
JP6024076B2 (ja) * 2011-01-13 2016-11-09 セイコーエプソン株式会社 シリコンデバイスの製造方法
JP2012227306A (ja) * 2011-04-19 2012-11-15 Ngk Insulators Ltd セラミック基板の製造方法
CN103814447B (zh) 2011-05-12 2016-04-20 Bbsa有限公司 垂直型第iii族氮化物半导体led芯片及其制造方法
JP2011216914A (ja) * 2011-07-27 2011-10-27 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法
US8940618B2 (en) * 2012-03-13 2015-01-27 Taiwan Semiconductor Manufacturing Company, Ltd. Method and device for cutting semiconductor wafers
JP6060509B2 (ja) * 2012-03-29 2017-01-18 大日本印刷株式会社 半導体素子の製造方法
JP6050613B2 (ja) * 2012-06-12 2016-12-21 新電元工業株式会社 半導体ウェーハ、半導体装置の製造方法及び半導体装置
GB201307773D0 (en) * 2013-04-30 2013-06-12 Atlantic Inertial Systems Ltd MEMS sensors
US9728518B2 (en) 2014-04-01 2017-08-08 Ati Technologies Ulc Interconnect etch with polymer layer edge protection
JP6336895B2 (ja) * 2014-11-28 2018-06-06 シチズンファインデバイス株式会社 基板および基板の製造方法
KR102436788B1 (ko) * 2014-12-04 2022-08-26 니폰 덴키 가라스 가부시키가이샤 유리판
GB2534204A (en) * 2015-01-17 2016-07-20 Melexis Technologies Nv Semiconductor device with at least one truncated corner and/or side cut-out
JP5763858B2 (ja) * 2015-02-13 2015-08-12 ビービーエスエイ リミテッドＢＢＳＡ Ｌｉｍｉｔｅｄ Ｉｉｉ族窒化物半導体縦型構造ｌｅｄチップの製造方法
DE112015006331T5 (de) * 2015-03-19 2017-12-14 Osram Opto Semiconductors Gmbh Fenster zum Bedecken eines optoelektronischen Halbleiterchips, mehrere Fenster umfassende Scheibe, Verfahren zur Herstellung von Fenstern und optoelektronisches Halbleiterbauelement
JP2017073424A (ja) * 2015-10-05 2017-04-13 日本特殊陶業株式会社 配線基板及びその製造方法
JP6579981B2 (ja) * 2016-03-11 2019-09-25 三菱電機株式会社 半導体ウエハおよびその製造方法
US20180015569A1 (en) * 2016-07-18 2018-01-18 Nanya Technology Corporation Chip and method of manufacturing chips
WO2018020793A1 (ja) * 2016-07-26 2018-02-01 ソニーセミコンダクタソリューションズ株式会社 半導体発光素子および半導体発光素子の製造方法
JP2018046094A (ja) * 2016-09-13 2018-03-22 エイブリック株式会社 半導体チップ、半導体装置、半導体ウェハ、及び半導体ウェハのダイシング方法
CN108206161B (zh) * 2016-12-20 2020-06-02 晟碟半导体（上海）有限公司 包含角部凹陷的半导体装置
KR101925565B1 (ko) * 2016-12-30 2018-12-06 (재)한국나노기술원 갈라짐 패턴을 이용한 에피층 분리 방법
JP2018109716A (ja) * 2017-01-05 2018-07-12 ソニーセミコンダクタソリューションズ株式会社 レンズモジュールおよびレンズモジュールの製造方法、撮像装置、並びに電子機器
EP3361839A1 (en) * 2017-02-14 2018-08-15 Infineon Technologies AG Multiple substrate and method for its fabrication
JP6384934B2 (ja) * 2017-06-20 2018-09-05 住友電工デバイス・イノベーション株式会社 半導体装置の製造方法
US10699973B2 (en) 2017-11-06 2020-06-30 GLOBALFOUNDERS Inc. Semiconductor test structure and method for forming the same
JP6950484B2 (ja) * 2017-11-20 2021-10-13 沖電気工業株式会社 半導体素子、発光基板、光プリントヘッド、画像形成装置
JP7193920B2 (ja) * 2018-03-09 2022-12-21 株式会社ディスコ パッケージ基板の加工方法
CN111390399B (zh) * 2020-03-12 2022-02-15 上海柏楚电子科技股份有限公司 基于冷却点的切割控制方法、系统、电子设备与介质
CN111430229B (zh) * 2020-04-28 2023-12-01 长江存储科技有限责任公司 切割方法
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KR20220164887A (ko) * 2021-06-07 2022-12-14 삼성전자주식회사 반도체 칩 및 제조 방법
JP2023004854A (ja) * 2021-06-25 2023-01-17 キヤノン株式会社 半導体装置及びその製造方法
DE102021121249A1 (de) * 2021-08-16 2023-02-16 Jumatech Gmbh Verfahren zur Herstellung von Formteilen aus einem elektrisch leitenden Flächenelement und Leiterplatte mit wenigstens einem solchen Formteil
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KR20240009279A (ko) * 2022-07-13 2024-01-22 에스케이하이닉스 주식회사 기판 분단을 포함한 반도체 칩 제조 방법
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Also Published As

Publication number Publication date
EP2051297A2 (en) 2009-04-22
EP2051297A3 (en) 2011-01-26
TW200917354A (en) 2009-04-16
JP2009099681A (ja) 2009-05-07
US20090098712A1 (en) 2009-04-16

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