TW200709671A - Ad conversion device and semiconductor device - Google Patents

Ad conversion device and semiconductor device

Info

Publication number
TW200709671A
TW200709671A TW095123990A TW95123990A TW200709671A TW 200709671 A TW200709671 A TW 200709671A TW 095123990 A TW095123990 A TW 095123990A TW 95123990 A TW95123990 A TW 95123990A TW 200709671 A TW200709671 A TW 200709671A
Authority
TW
Taiwan
Prior art keywords
reference signal
input stage
block
ramp
voltage comparing
Prior art date
Application number
TW095123990A
Other languages
English (en)
Chinese (zh)
Other versions
TWI335173B (enExample
Inventor
Takayuki Tooyama
Atsushi Suzuki
Noriyuki Fukushima
Yukihiro Yasui
Yoshikazu Nitta
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of TW200709671A publication Critical patent/TW200709671A/zh
Application granted granted Critical
Publication of TWI335173B publication Critical patent/TWI335173B/zh

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/06—Continuously compensating for, or preventing, undesired influence of physical parameters
    • H03M1/08—Continuously compensating for, or preventing, undesired influence of physical parameters of noise
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/06—Continuously compensating for, or preventing, undesired influence of physical parameters
    • H03M1/0602—Continuously compensating for, or preventing, undesired influence of physical parameters of deviations from the desired transfer characteristic
    • H03M1/0604—Continuously compensating for, or preventing, undesired influence of physical parameters of deviations from the desired transfer characteristic at one point, i.e. by adjusting a single reference value, e.g. bias or gain error
    • H03M1/0607—Offset or drift compensation
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/12—Analogue/digital converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/616—Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/767—Horizontal readout lines, multiplexers or registers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/12—Analogue/digital converters
    • H03M1/1205—Multiplexed conversion systems
    • H03M1/123—Simultaneous, i.e. using one converter per channel but with common control or reference circuits for multiple converters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/12—Analogue/digital converters
    • H03M1/50—Analogue/digital converters with intermediate conversion to time interval
    • H03M1/56—Input signal compared with linear ramp

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Theoretical Computer Science (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Analogue/Digital Conversion (AREA)
TW095123990A 2005-07-06 2006-06-30 Ad conversion device and semiconductor device TW200709671A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005197044A JP4524652B2 (ja) 2005-07-06 2005-07-06 Ａｄ変換装置並びに半導体装置

Publications (2)

Publication Number Publication Date
TW200709671A true TW200709671A (en) 2007-03-01
TWI335173B TWI335173B (enExample) 2010-12-21

Family

ID=37075670

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095123990A TW200709671A (en) 2005-07-06 2006-06-30 Ad conversion device and semiconductor device

Country Status (6)

Country Link
US (2) US7321329B2 (enExample)
EP (1) EP1742369B1 (enExample)
JP (1) JP4524652B2 (enExample)
KR (1) KR101182971B1 (enExample)
CN (1) CN1917374B (enExample)
TW (1) TW200709671A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI392354B (zh) * 2007-09-28 2013-04-01 Sony Corp A / D conversion circuit, solid-state imaging element, and camera system

Families Citing this family (122)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8089353B2 (en) * 2006-08-05 2012-01-03 Min Ming Tarng 4Less—Xtaless, capless, indless, dioless TSOC design of SOC or 4Free—Xtalfree, capfree, indfree, diofree TSOC design of SOC
JP4107269B2 (ja) * 2004-02-23 2008-06-25 ソニー株式会社 固体撮像装置
KR100744117B1 (ko) * 2005-08-24 2007-08-01 삼성전자주식회사 손실이 없는 비선형 아날로그 게인 콘트롤러를 지닌 이미지 센서 및 제조 방법
CN101352033B (zh) * 2005-12-27 2011-01-19 富士通半导体股份有限公司 固体摄像元件以及暗电流分量除去方法
JP4744343B2 (ja) * 2006-04-10 2011-08-10 ソニー株式会社 固体撮像装置および固体撮像装置の駆動方法
WO2007146158A1 (en) * 2006-06-07 2007-12-21 The Trustees Of Columbia University In The City Of New York Dna sequencing by nanopore using modified nucleotides
KR100826513B1 (ko) * 2006-09-08 2008-05-02 삼성전자주식회사 멀티플 샘플링을 이용한 ｃｄｓ 및 ａｄｃ 장치 및 방법
JP4843461B2 (ja) * 2006-11-13 2011-12-21 株式会社東芝 固体撮像装置
JP5079346B2 (ja) 2007-01-30 2012-11-21 東芝機械株式会社 波形補正装置および波形補正方法
JP4674589B2 (ja) 2007-02-05 2011-04-20 ソニー株式会社 固体撮像装置および撮像装置
EP1956715A1 (en) 2007-02-08 2008-08-13 STMicroelectronics (Research & Development) Limited Analogue to digital converter
JP2008271186A (ja) * 2007-04-20 2008-11-06 Olympus Corp 固体撮像装置
JP4311482B2 (ja) * 2007-05-17 2009-08-12 ソニー株式会社 撮像回路、ｃｍｏｓセンサ、および撮像装置
JP4944673B2 (ja) * 2007-06-01 2012-06-06 パナソニック株式会社 電圧発生回路、アナログ・デジタル変換回路、イメージセンサシステム
US7538702B2 (en) * 2007-06-15 2009-05-26 Micron Technology, Inc. Quantizing circuits with variable parameters
JP4929090B2 (ja) * 2007-07-26 2012-05-09 パナソニック株式会社 固体撮像装置およびその駆動方法
JP4389981B2 (ja) * 2007-08-06 2009-12-24 ソニー株式会社 固体撮像装置、固体撮像装置のアナログ−デジタル変換方法および撮像装置
US7812879B2 (en) * 2007-10-30 2010-10-12 Fairchild Imaging Self-triggering CMOS image sensor
JP2009124514A (ja) 2007-11-15 2009-06-04 Sony Corp 固体撮像素子、およびカメラシステム
JP4900200B2 (ja) * 2007-11-15 2012-03-21 ソニー株式会社 固体撮像素子、およびカメラシステム
JP4992681B2 (ja) * 2007-11-27 2012-08-08 コニカミノルタビジネステクノロジーズ株式会社 固体撮像装置
JP2009159331A (ja) * 2007-12-26 2009-07-16 Panasonic Corp 固体撮像装置、その駆動方法およびカメラ
JPWO2009090703A1 (ja) * 2008-01-18 2011-05-26 パナソニック株式会社 ランプ波出力回路、アナログデジタル変換回路、及びカメラ
JP4661876B2 (ja) 2008-01-18 2011-03-30 ソニー株式会社 固体撮像素子、およびカメラシステム
US8305474B2 (en) 2008-03-21 2012-11-06 STMicroelectronics (R&D) Ltd. Analog-to-digital conversion in image sensors
EP2104234B1 (en) 2008-03-21 2011-08-31 STMicroelectronics Limited Analog-to-digital conversion in image sensors
GB0806427D0 (en) 2008-04-09 2008-05-14 Cmosis Nv Parallel analog-to-digital conversion in pixel arrays
JP2009267836A (ja) * 2008-04-25 2009-11-12 Panasonic Corp 固体撮像装置、その駆動方法およびカメラ
JP5115335B2 (ja) * 2008-05-27 2013-01-09 ソニー株式会社 固体撮像素子及びカメラシステム
JP5332314B2 (ja) * 2008-05-29 2013-11-06 ソニー株式会社 固体撮像素子およびカメラシステム
JP5347341B2 (ja) * 2008-06-06 2013-11-20 ソニー株式会社 固体撮像装置、撮像装置、電子機器、ａｄ変換装置、ａｄ変換方法
JP2009296477A (ja) * 2008-06-09 2009-12-17 Olympus Corp 固体撮像装置
JP5198156B2 (ja) * 2008-06-09 2013-05-15 オリンパス株式会社 撮像装置
JP4975700B2 (ja) * 2008-08-06 2012-07-11 シャープ株式会社 Ｄａｃ測定方法および固体撮像装置
JP5165520B2 (ja) * 2008-10-01 2013-03-21 ソニー株式会社 固体撮像装置、撮像装置、および固体撮像装置のａｄ変換方法
JP5407264B2 (ja) * 2008-10-09 2014-02-05 ソニー株式会社 固体撮像素子およびカメラシステム
JP4891308B2 (ja) 2008-12-17 2012-03-07 キヤノン株式会社 固体撮像装置及び固体撮像装置を用いた撮像システム
JP4640507B2 (ja) * 2009-01-06 2011-03-02 ソニー株式会社 固体撮像装置、固体撮像装置の信号処理方法、および撮像装置
JP2010183435A (ja) * 2009-02-06 2010-08-19 Toshiba Corp 固体撮像装置
JP5531417B2 (ja) * 2009-02-12 2014-06-25 株式会社ニコン 固体撮像装置
GB0902822D0 (en) 2009-02-19 2009-04-08 Cmosis Nv Analog-to-digital conversation in pixel arrays
US8446309B2 (en) * 2009-02-19 2013-05-21 Cmosis Nv Analog-to-digital conversion in pixel arrays
JP5251592B2 (ja) * 2009-02-25 2013-07-31 ソニー株式会社 固体撮像装置、撮像装置、半導体装置
JP5307581B2 (ja) * 2009-03-02 2013-10-02 ルネサスエレクトロニクス株式会社 半導体装置、入力選択制御方法
FR2943199B1 (fr) * 2009-03-13 2012-12-28 E2V Semiconductors Procede de lecture de signal de capteur d'image et capteur d'image.
JP5426220B2 (ja) * 2009-04-13 2014-02-26 株式会社東芝 電源ノイズ除去回路
US8068047B2 (en) * 2010-01-14 2011-11-29 Advantest Corporation A-D convert apparatus and control method
US9678055B2 (en) 2010-02-08 2017-06-13 Genia Technologies, Inc. Methods for forming a nanopore in a lipid bilayer
US8324914B2 (en) 2010-02-08 2012-12-04 Genia Technologies, Inc. Systems and methods for characterizing a molecule
US20110192723A1 (en) * 2010-02-08 2011-08-11 Genia Technologies, Inc. Systems and methods for manipulating a molecule in a nanopore
US9605307B2 (en) * 2010-02-08 2017-03-28 Genia Technologies, Inc. Systems and methods for forming a nanopore in a lipid bilayer
JP5531797B2 (ja) * 2010-06-15 2014-06-25 ソニー株式会社 固体撮像素子およびカメラシステム
RU2441317C1 (ru) * 2010-09-20 2012-01-27 Государственное образовательное учреждение высшего профессионального образования "Уфимский государственный нефтяной технический университет" Аналого-цифровой преобразователь
JP2012109658A (ja) * 2010-11-15 2012-06-07 Sony Corp 固体撮像素子及び参照電圧の調整方法
KR20120058057A (ko) * 2010-11-29 2012-06-07 삼성전자주식회사 오프셋 제거 회로, 샘플링 회로 및 이미지 센서
GB2500360B (en) 2010-12-22 2019-10-23 Genia Tech Inc Nanopore-based single DNA molecule characterization, identification and isolation using speed bumps
US8962242B2 (en) 2011-01-24 2015-02-24 Genia Technologies, Inc. System for detecting electrical properties of a molecular complex
US9110478B2 (en) 2011-01-27 2015-08-18 Genia Technologies, Inc. Temperature regulation of measurement arrays
CN103477628A (zh) * 2011-04-21 2013-12-25 松下电器产业株式会社 斜坡信号发生电路及包括该电路的图像传感器和摄像装置
GB201117319D0 (en) * 2011-10-06 2011-11-16 Isis Innovation Active pixel image sensor
JP5362080B2 (ja) * 2011-10-07 2013-12-11 キヤノン株式会社 固体撮像装置及び撮像システム
JP5206861B2 (ja) * 2011-12-27 2013-06-12 ソニー株式会社 Ａｄ変換装置およびその方法、固体撮像素子およびその駆動方法、並びにカメラシステム
JP5893573B2 (ja) * 2012-02-09 2016-03-23 キヤノン株式会社 固体撮像装置
JP6029286B2 (ja) * 2012-02-17 2016-11-24 キヤノン株式会社 光電変換装置および撮像システム
US8986629B2 (en) 2012-02-27 2015-03-24 Genia Technologies, Inc. Sensor circuit for controlling, detecting, and measuring a molecular complex
US8830361B2 (en) * 2012-04-12 2014-09-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method of reducing column fixed pattern noise
GB2510719A (en) 2012-06-15 2014-08-13 Genia Technologies Inc Chip set-up and high-accuracy nucleic acid sequencing
JP5941783B2 (ja) * 2012-08-03 2016-06-29 オリンパス株式会社 撮像装置
JP6061587B2 (ja) * 2012-09-26 2017-01-18 キヤノン株式会社 光電変換装置、光電変換装置の駆動方法、撮像システム
US9605309B2 (en) 2012-11-09 2017-03-28 Genia Technologies, Inc. Nucleic acid sequencing using tags
FR2998752B1 (fr) * 2012-11-27 2016-01-01 E2V Semiconductors Procede de capture d'image avec un temps d'integration tres court
JP6146015B2 (ja) 2013-01-18 2017-06-14 株式会社リコー 光電変換素子、画像読取装置及び画像形成装置
GB201300999D0 (en) 2013-01-21 2013-03-06 Cmosis Nv Analog-to-digital conversation in pixel arrays
US9681207B2 (en) * 2013-01-24 2017-06-13 Finisar Corporation Local buffers in a liquid crystal on silicon chip
US9759711B2 (en) 2013-02-05 2017-09-12 Genia Technologies, Inc. Nanopore arrays
TWI694726B (zh) * 2013-02-27 2020-05-21 日商新力股份有限公司 攝像元件
JP5880478B2 (ja) * 2013-03-29 2016-03-09 ソニー株式会社 コンパレータ、固体撮像素子、電子機器、および、駆動方法
GB2515014B (en) * 2013-06-10 2020-06-17 Cmosis Bvba Analog-to-digital conversion
KR102086777B1 (ko) 2013-08-08 2020-03-09 삼성전자 주식회사 2-스텝 구조 및 차동 멀티 램핑 업/다운 신호를 적용하여 싱글 슬로프 기법으로 구현한 이미지 센서, 이의 동작 방법, 및 상기 이미지 센서를 포함하는 장치들
JP5641112B2 (ja) * 2013-08-28 2014-12-17 ソニー株式会社 固体撮像素子およびカメラシステム
TWI502989B (zh) * 2013-09-18 2015-10-01 Silicon Optronics Inc 影像感測器及其調整方法
US9551697B2 (en) 2013-10-17 2017-01-24 Genia Technologies, Inc. Non-faradaic, capacitively coupled measurement in a nanopore cell array
US9322062B2 (en) 2013-10-23 2016-04-26 Genia Technologies, Inc. Process for biosensor well formation
CA2926138A1 (en) 2013-10-23 2015-04-30 Genia Technologies, Inc. High speed molecular sensing with nanopores
JP2017050577A (ja) * 2014-01-21 2017-03-09 パナソニックＩｐマネジメント株式会社 固体撮像装置
TWI521496B (zh) * 2014-02-11 2016-02-11 聯詠科技股份有限公司 緩衝電路、面板模組及顯示驅動方法
JP2015177311A (ja) * 2014-03-14 2015-10-05 株式会社東芝 固体撮像装置
US9544520B2 (en) 2014-04-28 2017-01-10 Samsung Electronics Co., Ltd. Analog signal generation circuit
JP2015233184A (ja) * 2014-06-09 2015-12-24 ソニー株式会社 イメージセンサ、電子機器、コンパレータ、及び、駆動方法
JP6690539B2 (ja) * 2014-08-25 2020-04-28 ソニー株式会社 信号処理装置、制御方法、撮像素子、並びに、電子機器
CN104393856B (zh) 2014-10-24 2017-11-28 深圳市汇顶科技股份有限公司 一种斜坡波产生电路及其数模转换电路、指纹识别系统
US9325335B1 (en) 2014-10-24 2016-04-26 Teledyne Scientific & Imaging, Llc Comparator circuits with local ramp buffering for a column-parallel single slope ADC
JP2016181736A (ja) * 2015-03-23 2016-10-13 キヤノン株式会社 撮像装置、その駆動方法及び撮像システム
US9716510B2 (en) 2015-05-12 2017-07-25 Teledyne Scientific & Imaging, Llc Comparator circuits with constant input capacitance for a column-parallel single-slope ADC
JP6727771B2 (ja) * 2015-08-13 2020-07-22 キヤノン株式会社 撮像装置
KR102369625B1 (ko) * 2015-09-25 2022-03-03 삼성전자주식회사 아날로그-디지털 컨버터 및 이를 포함하는 이미지 센서
KR102577251B1 (ko) 2016-03-17 2023-09-11 삼성전자주식회사 지문 감지 센서 및 이를 포함하는 전자 장치
JP6661444B2 (ja) * 2016-03-31 2020-03-11 キヤノン株式会社 固体撮像装置
US9848140B2 (en) * 2016-03-31 2017-12-19 Omnivision Technologies, Inc. Horizontal banding reduction with ramp generator isolation in an image sensor
JP6758952B2 (ja) * 2016-06-28 2020-09-23 キヤノン株式会社 撮像装置および撮像システム
JP6192790B2 (ja) * 2016-10-06 2017-09-06 キヤノン株式会社 撮像装置および撮像システム
US11706538B2 (en) * 2017-02-16 2023-07-18 Sony Semiconductor Solutions Corporation Imaging system and imaging device
JP7029890B2 (ja) * 2017-03-02 2022-03-04 ソニーセミコンダクタソリューションズ株式会社 撮像素子、撮像素子の制御方法、及び、電子機器
TWI755462B (zh) 2017-03-02 2022-02-21 日商索尼半導體解決方案公司 影像感測器、控制影像感測器之方法及電子裝置
WO2018229594A1 (ja) * 2017-06-14 2018-12-20 株式会社半導体エネルギー研究所 撮像装置、及び電子機器
US10636470B2 (en) 2018-09-04 2020-04-28 Micron Technology, Inc. Source follower-based sensing scheme
US11128307B2 (en) * 2018-10-30 2021-09-21 Omnivision Technologies, Inc. Circuit and method for control of counter start time
US11025241B2 (en) * 2018-12-20 2021-06-01 Samsung Electronics Co., Ltd. Comparator circuit and mobile device
JP7338974B2 (ja) * 2019-01-11 2023-09-05 ブリルニクス シンガポール プライベート リミテッド 固体撮像装置、固体撮像装置の駆動方法、および電子機器
KR102656526B1 (ko) 2019-02-08 2024-04-12 삼성전자주식회사 이미지 센서
KR20200098024A (ko) * 2019-02-11 2020-08-20 삼성전자주식회사 이미지 센서의 펄스 생성기 및 이의 구동 방법
KR20200099423A (ko) * 2019-02-14 2020-08-24 삼성전자주식회사 이미지 센서 및 이미지 센서의 동작 방법
KR102689652B1 (ko) 2019-03-26 2024-07-30 삼성전자주식회사 이미지 센서
TWI846800B (zh) 2019-03-29 2024-07-01 日商索尼半導體解決方案公司 光檢測裝置及電子機器
TWI837280B (zh) 2019-03-29 2024-04-01 日商索尼半導體解決方案公司 光檢測裝置及電子機器
JP7407416B2 (ja) 2019-11-26 2024-01-04 パナソニックＩｐマネジメント株式会社 撮像装置およびカメラ
CN113382186A (zh) * 2020-03-09 2021-09-10 格科微电子（上海）有限公司 提高图像传感器性能的方法
US12081890B2 (en) 2020-03-24 2024-09-03 Sony Semiconductor Solutions Corporation Imaging device
JP2022074493A (ja) * 2020-11-04 2022-05-18 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置および電子機器
JP2022096480A (ja) * 2020-12-17 2022-06-29 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子
FR3122959A1 (fr) 2021-05-17 2022-11-18 Stmicroelectronics (Grenoble 2) Sas Circuit de lecture d'une matrice de pixels
JP2023111095A (ja) * 2022-01-31 2023-08-10 キヤノン株式会社 光電変換装置及びその駆動方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0736525B2 (ja) * 1988-05-13 1995-04-19 日本電気株式会社 出力バッファ回路及びその駆動方法
JPH09238286A (ja) * 1996-02-29 1997-09-09 Toshiba Corp デジタル光学センサ
US6344877B1 (en) * 1997-06-12 2002-02-05 International Business Machines Corporation Image sensor with dummy pixel or dummy pixel array
US5877715A (en) * 1997-06-12 1999-03-02 International Business Machines Corporation Correlated double sampling with up/down counter
JP3357858B2 (ja) * 1999-03-30 2002-12-16 株式会社東芝 アナログデジタル変換器
DE19959539A1 (de) * 1999-12-09 2001-06-13 Thomson Brandt Gmbh Bildaufnehmer
JP4178702B2 (ja) * 1999-12-28 2008-11-12 ソニー株式会社 差動増幅器、コンパレータ、及びａ／ｄコンバータ
JP3770034B2 (ja) * 2000-02-29 2006-04-26 横河電機株式会社 フォトダイオードアレイモジュール
JP2004159274A (ja) 2002-09-13 2004-06-03 Shoji Kawahito 固体撮像装置
EP1484910A1 (fr) * 2003-06-03 2004-12-08 Asulab S.A. Dispositif et procédé de conversion analogique numérique surnuméraire adaptatif pour un capteur d'image
KR100843194B1 (ko) * 2004-01-30 2008-07-02 삼성전자주식회사 램프신호 발생회로
US7046179B1 (en) * 2004-02-13 2006-05-16 National Semiconductor Corporation Apparatus and method for on-chip ADC calibration
US7129883B2 (en) * 2004-02-23 2006-10-31 Sony Corporation Method and apparatus for AD conversion, semiconductor device for detecting distribution of physical quantity, and electronic apparatus
JP4571431B2 (ja) * 2004-04-30 2010-10-27 ルネサスエレクトロニクス株式会社 信号増幅回路

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI392354B (zh) * 2007-09-28 2013-04-01 Sony Corp A / D conversion circuit, solid-state imaging element, and camera system

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CN1917374A (zh) 2007-02-21
EP1742369A2 (en) 2007-01-10
US7471230B2 (en) 2008-12-30
US20070008206A1 (en) 2007-01-11
KR20070005508A (ko) 2007-01-10
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EP1742369A3 (en) 2007-02-28
US20080094271A1 (en) 2008-04-24
US7321329B2 (en) 2008-01-22
KR101182971B1 (ko) 2012-09-18
CN1917374B (zh) 2014-09-17
JP2007019682A (ja) 2007-01-25
EP1742369B1 (en) 2015-09-02

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