TW200515952A - Processed object processing apparatus, processed object processing method, pressure control method, processed object transfer method, and transfer apparatus - Google Patents

Processed object processing apparatus, processed object processing method, pressure control method, processed object transfer method, and transfer apparatus

Info

Publication number
TW200515952A
TW200515952A TW093118155A TW93118155A TW200515952A TW 200515952 A TW200515952 A TW 200515952A TW 093118155 A TW093118155 A TW 093118155A TW 93118155 A TW93118155 A TW 93118155A TW 200515952 A TW200515952 A TW 200515952A
Authority
TW
Taiwan
Prior art keywords
processed object
transfer
object processing
processed
pressure control
Prior art date
Application number
TW093118155A
Other languages
English (en)
Other versions
TWI361723B (en
Inventor
Jun Ozawa
Gaku Takahashi
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200515952A publication Critical patent/TW200515952A/zh
Application granted granted Critical
Publication of TWI361723B publication Critical patent/TWI361723B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67201—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
TW093118155A 2003-06-24 2004-06-23 Processed object processing apparatus, processed object processing method, pressure control method, processed object transfer method, and transfer apparatus TWI361723B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003179435 2003-06-24
JP2003422821A JP4833512B2 (ja) 2003-06-24 2003-12-19 被処理体処理装置、被処理体処理方法及び被処理体搬送方法

Publications (2)

Publication Number Publication Date
TW200515952A true TW200515952A (en) 2005-05-16
TWI361723B TWI361723B (en) 2012-04-11

Family

ID=33543503

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093118155A TWI361723B (en) 2003-06-24 2004-06-23 Processed object processing apparatus, processed object processing method, pressure control method, processed object transfer method, and transfer apparatus

Country Status (6)

Country Link
US (2) US20040262254A1 (zh)
JP (1) JP4833512B2 (zh)
KR (2) KR100736959B1 (zh)
CN (2) CN100342518C (zh)
DE (1) DE102004010688B4 (zh)
TW (1) TWI361723B (zh)

Families Citing this family (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6814844B2 (en) * 2001-08-29 2004-11-09 Roche Diagnostics Corporation Biosensor with code pattern
US7877161B2 (en) 2003-03-17 2011-01-25 Tokyo Electron Limited Method and system for performing a chemical oxide removal process
JP5001388B2 (ja) * 2003-06-24 2012-08-15 東京エレクトロン株式会社 被処理体処理装置の圧力制御方法
JP4843285B2 (ja) * 2005-02-14 2011-12-21 東京エレクトロン株式会社 電子デバイスの製造方法及びプログラム
JP4860219B2 (ja) * 2005-02-14 2012-01-25 東京エレクトロン株式会社 基板の処理方法、電子デバイスの製造方法及びプログラム
JP4475136B2 (ja) 2005-02-18 2010-06-09 東京エレクトロン株式会社 処理システム、前処理装置及び記憶媒体
JP2007088401A (ja) * 2005-08-25 2007-04-05 Tokyo Electron Ltd 基板処理装置，基板処理方法，プログラム，プログラムを記録した記録媒体
JP4791110B2 (ja) * 2005-09-02 2011-10-12 東京エレクトロン株式会社 真空チャンバおよび真空処理装置
JP5046506B2 (ja) * 2005-10-19 2012-10-10 東京エレクトロン株式会社 基板処理装置，基板処理方法，プログラム，プログラムを記録した記録媒体
JP4890025B2 (ja) * 2005-12-28 2012-03-07 東京エレクトロン株式会社 エッチング方法及び記録媒体
JP4854317B2 (ja) 2006-01-31 2012-01-18 東京エレクトロン株式会社 基板処理方法
JP4933789B2 (ja) * 2006-02-13 2012-05-16 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
US7660640B2 (en) * 2006-03-07 2010-02-09 Siemens Aktiengesellschaft Apparatus and method for predictive control of a power generation system
JP4688764B2 (ja) * 2006-09-19 2011-05-25 東京エレクトロン株式会社 基板処理装置の載置台除電方法
JP5084250B2 (ja) * 2006-12-26 2012-11-28 東京エレクトロン株式会社 ガス処理装置およびガス処理方法ならびに記憶媒体
JP2008186865A (ja) 2007-01-26 2008-08-14 Tokyo Electron Ltd 基板処理装置
JP2008192643A (ja) * 2007-01-31 2008-08-21 Tokyo Electron Ltd 基板処理装置
JP5048352B2 (ja) 2007-01-31 2012-10-17 東京エレクトロン株式会社 基板処理方法及び基板処理装置
US20080217293A1 (en) * 2007-03-06 2008-09-11 Tokyo Electron Limited Processing system and method for performing high throughput non-plasma processing
KR100851237B1 (ko) * 2007-03-15 2008-08-20 피에스케이 주식회사 기판 처리 방법
KR101411421B1 (ko) * 2007-09-21 2014-07-01 호재혁 반입/반출챔버, 이송챔버, 이를 포함하는 진공처리시스템
JP5374039B2 (ja) 2007-12-27 2013-12-25 東京エレクトロン株式会社 基板処理方法、基板処理装置及び記憶媒体
US20120088370A1 (en) * 2010-10-06 2012-04-12 Lam Research Corporation Substrate Processing System with Multiple Processing Devices Deployed in Shared Ambient Environment and Associated Methods
US9512520B2 (en) * 2011-04-25 2016-12-06 Applied Materials, Inc. Semiconductor substrate processing system
CN102506712A (zh) * 2011-11-04 2012-06-20 中国科学院微电子研究所 一种激光检测装置
TW201332871A (zh) * 2011-12-07 2013-08-16 Intevac Inc 高載量太陽能晶圓裝載裝置
WO2013119383A1 (en) * 2012-02-08 2013-08-15 Applied Materials, Inc. Dynamic load lock with cellular structure for discrete substrates
KR101707295B1 (ko) 2012-05-23 2017-02-15 도쿄엘렉트론가부시키가이샤 산화물 에칭 방법
WO2013183437A1 (ja) 2012-06-08 2013-12-12 東京エレクトロン株式会社 ガス処理方法
JP5997555B2 (ja) 2012-09-14 2016-09-28 東京エレクトロン株式会社 エッチング装置およびエッチング方法
JP6097192B2 (ja) 2013-04-19 2017-03-15 東京エレクトロン株式会社 エッチング方法
JP6139986B2 (ja) 2013-05-31 2017-05-31 東京エレクトロン株式会社 エッチング方法
JP6258656B2 (ja) 2013-10-17 2018-01-10 東京エレクトロン株式会社 基板処理方法および基板処理装置
JP6239339B2 (ja) 2013-10-17 2017-11-29 東京エレクトロン株式会社 エッチング装置、エッチング方法、および基板載置機構
US20150219565A1 (en) * 2014-02-04 2015-08-06 Applied Materials, Inc. Application of in-line thickness metrology and chamber matching in display manufacturing
KR20150110947A (ko) * 2014-03-21 2015-10-05 피에스케이 주식회사 기판 처리 장치 및 방법
JP2016012609A (ja) 2014-06-27 2016-01-21 東京エレクトロン株式会社 エッチング方法
JP2016025195A (ja) 2014-07-18 2016-02-08 東京エレクトロン株式会社 エッチング方法
JP6494226B2 (ja) 2014-09-16 2019-04-03 東京エレクトロン株式会社 エッチング方法
KR102418643B1 (ko) * 2015-05-14 2022-07-08 에스케이하이닉스 주식회사 웨이퍼 파티클 제거 장치 및 이를 포함하는 웨이퍼 공정 장비, 노광 방법
US10290553B2 (en) * 2015-06-24 2019-05-14 Tokyo Electron Limited System and method of determining process completion of post heat treatment of a dry etch process
US10388553B2 (en) * 2015-12-28 2019-08-20 Asm Ip Holding B.V. Substrate processing system
JP6635888B2 (ja) 2016-07-14 2020-01-29 東京エレクトロン株式会社 プラズマ処理システム
JP6640759B2 (ja) * 2017-01-11 2020-02-05 株式会社アルバック 真空処理装置
JP7109165B2 (ja) 2017-05-30 2022-07-29 東京エレクトロン株式会社 エッチング方法
JP6615153B2 (ja) 2017-06-16 2019-12-04 東京エレクトロン株式会社 基板処理装置、基板載置機構、および基板処理方法
JP6796559B2 (ja) 2017-07-06 2020-12-09 東京エレクトロン株式会社 エッチング方法および残渣除去方法
US10784175B2 (en) * 2018-03-20 2020-09-22 Tokyo Electron Limited Platform and method of operating for integrated end-to-end gate contact process
CN112074943A (zh) * 2018-05-15 2020-12-11 瑞士艾发科技 基体真空处理设备及其方法
JP7204348B2 (ja) 2018-06-08 2023-01-16 東京エレクトロン株式会社 エッチング方法およびエッチング装置
KR102614944B1 (ko) * 2018-09-26 2023-12-19 도쿄엘렉트론가부시키가이샤 에칭 방법, 에칭 잔사의 제거 방법, 및 기억 매체
JP7224160B2 (ja) 2018-12-04 2023-02-17 東京エレクトロン株式会社 発光モニタ方法、基板処理方法、および基板処理装置
CN111690914B (zh) * 2019-03-13 2023-05-02 咸阳彩虹光电科技有限公司 一种化学气相沉积设备及其控制方法和控制装置
CN112397411A (zh) * 2019-08-13 2021-02-23 台湾积体电路制造股份有限公司 包含抽出装置的制程系统及其监测方法
JP7296825B2 (ja) * 2019-08-26 2023-06-23 東京エレクトロン株式会社 載置装置の制御方法、載置装置および検査装置
JP2021180281A (ja) 2020-05-15 2021-11-18 東京エレクトロン株式会社 エッチング方法およびエッチング装置
JP2022077419A (ja) 2020-11-11 2022-05-23 東京エレクトロン株式会社 エッチング方法およびエッチング装置
KR20220087623A (ko) * 2020-12-17 2022-06-27 삼성전자주식회사 기판 처리 장치
US20230048337A1 (en) * 2021-08-16 2023-02-16 Applied Materials, Inc. Prevention of contamination of substrates during pressure changes in processing systems
CN115088922B (zh) * 2022-06-17 2023-10-13 瑞安市大虎鞋业有限公司 一种皮鞋生产加工用表面清灰装置及其使用方法

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2723284A1 (de) * 1977-05-24 1978-12-07 Leybold Heraeus Gmbh & Co Kg Transporteinrichtung fuer die bewegung von gegenstaenden in abgeschlossenen raeumen
DE2812271C2 (de) * 1978-03-21 1983-01-27 Leybold-Heraeus GmbH, 5000 Köln Vorrichtung mit mehreren Schleusenkammern zum chargenweisen Beschichten von Substraten
DE2831710B1 (de) * 1978-07-19 1979-10-25 Messerschmitt Boelkow Blohm Einrichtung zur Erhoehung des Vakuums in einer von einem Band durchlaufenen Vakuumkammer
US5174881A (en) * 1988-05-12 1992-12-29 Mitsubishi Denki Kabushiki Kaisha Apparatus for forming a thin film on surface of semiconductor substrate
DE3935002A1 (de) * 1989-10-20 1991-04-25 Plasonic Oberflaechentechnik G Verfahren und vorrichtung zur kontinuierlichen bearbeitung von substraten
JPH04162709A (ja) * 1990-10-26 1992-06-08 Fujitsu Ltd 半導体製造装置および反応処理方法
JP2920850B2 (ja) * 1991-03-25 1999-07-19 東京エレクトロン株式会社 半導体の表面処理方法及びその装置
US5636960A (en) * 1992-07-29 1997-06-10 Tokyo Electron Limited Apparatus for detecting and aligning a substrate
US5558482A (en) * 1992-07-29 1996-09-24 Tokyo Electron Limited Multi-chamber system
JPH0653304A (ja) * 1992-07-29 1994-02-25 Tokyo Electron Ltd 減圧処理装置
KR100256215B1 (ko) 1993-02-26 2000-06-01 히가시 데쓰로 멀티챔버 시스템
JP3422583B2 (ja) 1994-03-23 2003-06-30 東京エレクトロン株式会社 処理装置
DE4417026A1 (de) * 1994-05-14 1995-12-14 Norbert Stegmann Verfahren und Vorrichtung zum Dekontaminieren von mit Schadstoffen belasteter Materialien
US5934856A (en) * 1994-05-23 1999-08-10 Tokyo Electron Limited Multi-chamber treatment system
JPH0846013A (ja) * 1994-05-23 1996-02-16 Tokyo Electron Ltd マルチチャンバ処理システム用搬送装置
JPH0874028A (ja) * 1994-09-01 1996-03-19 Matsushita Electric Ind Co Ltd 薄膜形成装置および薄膜形成方法
JPH10107124A (ja) * 1996-08-05 1998-04-24 Kokusai Electric Co Ltd 基板処理装置
KR100269097B1 (ko) 1996-08-05 2000-12-01 엔도 마코토 기판처리장치
US5753161A (en) * 1996-08-14 1998-05-19 Owens-Corning Fiberglas Technology, Inc. Vacuum extrusion system and method
US5914493A (en) * 1997-02-21 1999-06-22 Nikon Corporation Charged-particle-beam exposure apparatus and methods with substrate-temperature control
AU2710099A (en) * 1998-03-27 1999-10-18 Empa Eidgenossische Materialprufungs- Und Forschungsanstalt Vacuum strip coating installation
US6213704B1 (en) * 1998-05-20 2001-04-10 Applied Komatsu Technology, Inc. Method and apparatus for substrate transfer and processing
JP2000012649A (ja) * 1998-06-18 2000-01-14 Matsushita Electric Ind Co Ltd 半導体製造方法
JP3629371B2 (ja) * 1998-10-29 2005-03-16 シャープ株式会社 成膜装置および成膜方法
TW442891B (en) 1998-11-17 2001-06-23 Tokyo Electron Ltd Vacuum processing system
JP2000150618A (ja) * 1998-11-17 2000-05-30 Tokyo Electron Ltd 真空処理システム
JP2000195921A (ja) * 1998-12-25 2000-07-14 Tokyo Electron Ltd 搬送装置
JP4256551B2 (ja) * 1998-12-25 2009-04-22 東京エレクトロン株式会社 真空処理システム
WO2000042650A1 (en) 1999-01-12 2000-07-20 Tokyo Electron Limited Vacuum treatment device
JP2000349134A (ja) 1999-06-02 2000-12-15 Tokyo Electron Ltd 処理装置
JP2001135704A (ja) * 1999-11-09 2001-05-18 Sharp Corp 基板処理装置及び基板搬送用トレイの搬送制御方法
JP2001150618A (ja) * 1999-11-30 2001-06-05 Daicel Chem Ind Ltd 積層体
JP3998386B2 (ja) * 2000-01-26 2007-10-24 三菱電機株式会社 液晶表示装置の製造装置および液晶表示装置の製造方法
US6335261B1 (en) * 2000-05-31 2002-01-01 International Business Machines Corporation Directional CVD process with optimized etchback
US6440808B1 (en) 2000-09-28 2002-08-27 International Business Machines Corporation Damascene-gate process for the fabrication of MOSFET devices with minimum poly-gate depletion, silicided source and drain junctions, and low sheet resistance gate-poly
US6893544B2 (en) * 2001-08-14 2005-05-17 Samsung Corning Co., Ltd. Apparatus and method for depositing thin films on a glass substrate
US6660598B2 (en) * 2002-02-26 2003-12-09 International Business Machines Corporation Method of forming a fully-depleted SOI ( silicon-on-insulator) MOSFET having a thinned channel region
JP4531557B2 (ja) * 2002-05-21 2010-08-25 エーエスエム アメリカ インコーポレイテッド 半導体処理ツール内チャンバ間の相互汚染の減少
US6858532B2 (en) * 2002-12-10 2005-02-22 International Business Machines Corporation Low defect pre-emitter and pre-base oxide etch for bipolar transistors and related tooling

Also Published As

Publication number Publication date
TWI361723B (en) 2012-04-11
US8623765B2 (en) 2014-01-07
KR100809126B1 (ko) 2008-03-03
CN101101866A (zh) 2008-01-09
CN100342518C (zh) 2007-10-10
US20040262254A1 (en) 2004-12-30
CN100521083C (zh) 2009-07-29
US20090301525A1 (en) 2009-12-10
KR20050001299A (ko) 2005-01-06
CN1574270A (zh) 2005-02-02
KR100736959B1 (ko) 2007-07-09
KR20060125661A (ko) 2006-12-06
JP2005039185A (ja) 2005-02-10
JP4833512B2 (ja) 2011-12-07
DE102004010688A1 (de) 2005-02-17
DE102004010688B4 (de) 2010-07-22

Similar Documents

Publication Publication Date Title
TW200515952A (en) Processed object processing apparatus, processed object processing method, pressure control method, processed object transfer method, and transfer apparatus
WO2007112454A3 (en) Apparatus and method for processing substrates using one or more vacuum transfer chamber units
WO2019084461A8 (en) Maintenance systems for use in systems and methods for processing objects including mobile matrix carrier systems
EP3950539A4 (en) INTELLIGENT STORAGE SYSTEM, PROCESSING TERMINAL, STORAGE ROBOT AND INTELLIGENT STORAGE PROCESS
MY202367A (en) Method, apparatus, and system for blockchain consensus
EP1404085A3 (en) System and method for securely handling control information
WO2004007378A3 (en) Pathogen reduction using chloramines
WO2007082043A3 (en) Method and apparatus for scheduling the processing of multimedia data in parallel processing systems
DE50312974D1 (de) Vorrichtung zur oberflächenbearbeitung von teilen
WO2004061664A3 (en) Delta object replication system and method for clustered system
GB2426588A (en) Improvement to seismic processing for the elimination of multiple reflections
WO2008095500A3 (en) Method and system for processing of items
MY148631A (en) Apparatus and methods for transporting and processing substrates
AU2003301333A1 (en) Apparatus and process for sensing fluoro species in semiconductor processing systems
WO2009105425A3 (en) Water-contaminant separation system
WO2019101232A3 (en) Methods and devices for providing transaction data to blockchain system for processing
MX2010001230A (es) Sistema, metodo y aparato para procesar producto oseo.
SG10201808438SA (en) Substrate processing apparatus, substrate processing method, and computer storage medium
EP3855370A4 (en) QUANTUM CHIP SYSTEM, QUANTUM COMPUTING PROCESSING SYSTEM AND ELECTRONIC DEVICE
EP1241575A3 (en) System and method for distributed processing
WO2005048086A3 (en) Command processing systems and methods
Yabalak et al. Application of response surface methodology for the optimization of oxacillin degradation by subcritical water oxidation using H2O2: genotoxicity and antimicrobial activity analysis of treated samples
EP4075347A4 (en) QUANTUM CHIP CONTROLLER, QUANTUM COMPUTER PROCESSING SYSTEM AND ELECTRONIC DEVICE
WO2002071248A3 (de) Verfahren und vorrichtungen zur datenbe- und/oder verarbeitung
AU2003270874A1 (en) Computationally efficient mathematical engine

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees