SG157794G - Semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit deviceInfo
- Publication number
- SG157794G SG157794G SG157794A SG157794A SG157794G SG 157794 G SG157794 G SG 157794G SG 157794 A SG157794 A SG 157794A SG 157794 A SG157794 A SG 157794A SG 157794 G SG157794 G SG 157794G
- Authority
- SG
- Singapore
- Prior art keywords
- integrated circuit
- semiconductor integrated
- circuit device
- semiconductor
- integrated
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
- G11C5/146—Substrate bias generators
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Dram (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (12)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59180534A JPS6159688A (ja) | 1984-08-31 | 1984-08-31 | 半導体集積回路装置 |
KR1019850005597A KR940001638B1 (ko) | 1984-08-31 | 1985-08-03 | 반도체 집적 회로장치 |
US06/763,615 US4775959A (en) | 1984-08-31 | 1985-08-08 | Semiconductor integrated circuit device having back-bias voltage generator |
EP85110960A EP0173980B1 (en) | 1984-08-31 | 1985-08-30 | Semiconductor integrated circuit device |
US07/249,660 US4964082A (en) | 1984-08-31 | 1988-09-27 | Semiconductor memory device having a back-bias voltage generator |
US07/962,329 USRE34797E (en) | 1984-08-31 | 1992-10-16 | Semiconductor memory device having a back-bias voltage generator |
KR1019920023477A KR940001642B1 (ko) | 1984-08-31 | 1992-12-07 | 반도체 집적 회로장치 |
KR1019920023478A KR940001643B1 (ko) | 1984-08-31 | 1992-12-07 | 반도체 집적 회로장치 |
KR1019920023475A KR940001640B1 (ko) | 1984-08-31 | 1992-12-07 | 반도체 집적 회로장치 |
KR1019920023476A KR940001641B1 (ko) | 1984-08-31 | 1992-12-07 | 반도체 집적 회로장치 |
SG157794A SG157794G (en) | 1984-08-31 | 1994-10-27 | Semiconductor integrated circuit device |
HK85295A HK85295A (en) | 1984-08-31 | 1995-06-01 | Semiconductor integrated circuit device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59180534A JPS6159688A (ja) | 1984-08-31 | 1984-08-31 | 半導体集積回路装置 |
SG157794A SG157794G (en) | 1984-08-31 | 1994-10-27 | Semiconductor integrated circuit device |
Publications (1)
Publication Number | Publication Date |
---|---|
SG157794G true SG157794G (en) | 1995-03-17 |
Family
ID=26500026
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG157794A SG157794G (en) | 1984-08-31 | 1994-10-27 | Semiconductor integrated circuit device |
Country Status (6)
Country | Link |
---|---|
US (3) | US4775959A (xx) |
EP (1) | EP0173980B1 (xx) |
JP (1) | JPS6159688A (xx) |
KR (5) | KR940001638B1 (xx) |
HK (1) | HK85295A (xx) |
SG (1) | SG157794G (xx) |
Families Citing this family (85)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6159688A (ja) * | 1984-08-31 | 1986-03-27 | Hitachi Ltd | 半導体集積回路装置 |
JPH0618249B2 (ja) * | 1984-10-17 | 1994-03-09 | 富士通株式会社 | 半導体集積回路 |
DE8714849U1 (de) * | 1986-12-23 | 1987-12-23 | Jenoptik Jena Gmbh, Ddr 6900 Jena | Geregelter CMOS-Substratspannungsgenerator |
US5249159A (en) * | 1987-05-27 | 1993-09-28 | Hitachi, Ltd. | Semiconductor memory |
KR900006192B1 (ko) * | 1987-10-30 | 1990-08-25 | 삼성전자 주식회사 | 백 바이어스 전압 발생기 |
US4794278A (en) * | 1987-12-30 | 1988-12-27 | Intel Corporation | Stable substrate bias generator for MOS circuits |
JP2824470B2 (ja) * | 1988-07-05 | 1998-11-11 | 株式会社日立製作所 | ダイナミック型ram |
KR0134773B1 (ko) * | 1988-07-05 | 1998-04-20 | Hitachi Ltd | 반도체 기억장치 |
IT1225608B (it) * | 1988-07-06 | 1990-11-22 | Sgs Thomson Microelectronics | Regolazione della tensione prodotta da un moltiplicatore di tensione. |
US4961167A (en) * | 1988-08-26 | 1990-10-02 | Mitsubishi Denki Kabushiki Kaisha | Substrate bias generator in a dynamic random access memory with auto/self refresh functions and a method of generating a substrate bias therein |
JPH0814986B2 (ja) * | 1988-12-08 | 1996-02-14 | 三菱電機株式会社 | リフレッシュ機能内蔵ダイナミック型半導体記憶装置 |
JPH0817033B2 (ja) * | 1988-12-08 | 1996-02-21 | 三菱電機株式会社 | 基板バイアス電位発生回路 |
JPH02215154A (ja) * | 1989-02-16 | 1990-08-28 | Toshiba Corp | 電圧制御回路 |
KR920010749B1 (ko) * | 1989-06-10 | 1992-12-14 | 삼성전자 주식회사 | 반도체 집적소자의 내부전압 변환회로 |
US5341035A (en) * | 1990-06-04 | 1994-08-23 | Matsushita Electric Industrial Co., Ltd. | Substrate potential generator |
US5039877A (en) * | 1990-08-30 | 1991-08-13 | Micron Technology, Inc. | Low current substrate bias generator |
US5157278A (en) * | 1990-10-30 | 1992-10-20 | Samsung Electronics Co., Ltd. | Substrate voltage generator for semiconductor device |
JP2724919B2 (ja) * | 1991-02-05 | 1998-03-09 | 三菱電機株式会社 | 基板バイアス発生装置 |
JPH04255989A (ja) * | 1991-02-07 | 1992-09-10 | Mitsubishi Electric Corp | 半導体記憶装置および内部電圧発生方法 |
JPH04259983A (ja) * | 1991-02-15 | 1992-09-16 | Hitachi Ltd | 半導体記憶装置 |
US5196739A (en) * | 1991-04-03 | 1993-03-23 | National Semiconductor Corporation | High voltage charge pump |
KR940004482Y1 (ko) * | 1991-10-10 | 1994-07-04 | 금성일렉트론 주식회사 | 셑 플레이트 전압 초기 셑업회로 |
DE4237589C2 (de) * | 1991-11-07 | 1999-10-28 | Samsung Electronics Co Ltd | Spannungspumpschaltung |
KR940008147B1 (ko) * | 1991-11-25 | 1994-09-03 | 삼성전자 주식회사 | 저전력 데이타 리텐션 기능을 가지는 반도체 메모리장치 |
KR950002015B1 (ko) * | 1991-12-23 | 1995-03-08 | 삼성전자주식회사 | 하나의 오실레이터에 의해 동작되는 정전원 발생회로 |
US5260646A (en) * | 1991-12-23 | 1993-11-09 | Micron Technology, Inc. | Low power regulator for a voltage generator circuit |
DE4221575C2 (de) * | 1992-07-01 | 1995-02-09 | Ibm | Integrierter CMOS-Halbleiterschaltkreis und Datenverarbeitungssystem mit integriertem CMOS-Halbleiterschaltkreis |
KR950003390Y1 (ko) * | 1992-09-24 | 1995-04-27 | 문정환 | 로우 어드레스 스트로브(/ras) 신호의 클램핑 회로 |
KR950006067Y1 (ko) * | 1992-10-08 | 1995-07-27 | 문정환 | 반도체 메모리 장치 |
JPH06195971A (ja) * | 1992-10-29 | 1994-07-15 | Mitsubishi Electric Corp | 基板電位発生回路 |
JPH07105681A (ja) * | 1993-10-07 | 1995-04-21 | Mitsubishi Electric Corp | 半導体装置 |
JP3110262B2 (ja) * | 1993-11-15 | 2000-11-20 | 松下電器産業株式会社 | 半導体装置及び半導体装置のオペレーティング方法 |
US5461591A (en) * | 1993-12-02 | 1995-10-24 | Goldstar Electron Co., Ltd. | Voltage generator for semiconductor memory device |
US6882215B1 (en) * | 1994-01-21 | 2005-04-19 | Samsung Electronics Co., Ltd. | Substrate bias generator in semiconductor memory device |
KR0123849B1 (ko) * | 1994-04-08 | 1997-11-25 | 문정환 | 반도체 디바이스의 내부 전압발생기 |
US5502671A (en) * | 1994-08-31 | 1996-03-26 | Texas Instruments Incorporated | Apparatus and method for a semiconductor memory configuration-dependent output buffer supply circuit |
JP3167904B2 (ja) * | 1994-12-27 | 2001-05-21 | 日本鋼管株式会社 | 電圧昇圧回路 |
US5670907A (en) * | 1995-03-14 | 1997-09-23 | Lattice Semiconductor Corporation | VBB reference for pumped substrates |
JPH08272467A (ja) * | 1995-03-31 | 1996-10-18 | Mitsubishi Electric Corp | 基板電位発生回路 |
DE69632098T2 (de) * | 1995-04-21 | 2005-03-24 | Nippon Telegraph And Telephone Corp. | MOSFET Schaltung und ihre Anwendung in einer CMOS Logikschaltung |
KR0142967B1 (ko) * | 1995-04-26 | 1998-08-17 | 김광호 | 반도체 메모리장치의 기판 전압 제어회로 |
US6259310B1 (en) * | 1995-05-23 | 2001-07-10 | Texas Instruments Incorporated | Apparatus and method for a variable negative substrate bias generator |
US5719890A (en) * | 1995-06-01 | 1998-02-17 | Micron Technology, Inc. | Method and circuit for transferring data with dynamic parity generation and checking scheme in multi-port DRAM |
US5644215A (en) * | 1995-06-07 | 1997-07-01 | Micron Technology, Inc. | Circuit and method for regulating a voltage |
US5694072A (en) * | 1995-08-28 | 1997-12-02 | Pericom Semiconductor Corp. | Programmable substrate bias generator with current-mirrored differential comparator and isolated bulk-node sensing transistor for bias voltage control |
US6822470B2 (en) | 1995-08-30 | 2004-11-23 | Micron Technology, Inc. | On-chip substrate regulator test mode |
US5880593A (en) * | 1995-08-30 | 1999-03-09 | Micron Technology, Inc. | On-chip substrate regulator test mode |
US5612644A (en) * | 1995-08-31 | 1997-03-18 | Cirrus Logic Inc. | Circuits, systems and methods for controlling substrate bias in integrated circuits |
US5773999A (en) * | 1995-09-28 | 1998-06-30 | Lg Semicon Co., Ltd. | Output buffer for memory circuit |
JP3597281B2 (ja) * | 1995-11-28 | 2004-12-02 | 株式会社ルネサステクノロジ | 電位検出回路及び半導体集積回路 |
JPH09213073A (ja) * | 1996-02-06 | 1997-08-15 | Mitsubishi Electric Corp | 半導体集積回路 |
US5841723A (en) * | 1996-05-28 | 1998-11-24 | Micron Technology, Inc. | Method and apparatus for programming anti-fuses using an isolated well programming circuit |
US5896041A (en) * | 1996-05-28 | 1999-04-20 | Micron Technology, Inc. | Method and apparatus for programming anti-fuses using internally generated programming voltage |
KR100223770B1 (ko) * | 1996-06-29 | 1999-10-15 | 김영환 | 반도체 장치의 문턱전압 제어회로 |
US6064250A (en) * | 1996-07-29 | 2000-05-16 | Townsend And Townsend And Crew Llp | Various embodiments for a low power adaptive charge pump circuit |
US5883544A (en) * | 1996-12-03 | 1999-03-16 | Stmicroelectronics, Inc. | Integrated circuit actively biasing the threshold voltage of transistors and related methods |
US5715199A (en) * | 1996-12-23 | 1998-02-03 | Hyundai Electronics Industries Co., Ltd. | Back bias voltage generating circuit |
US6487207B1 (en) | 1997-02-26 | 2002-11-26 | Micron Technology, Inc. | Shared buffer memory architecture for asynchronous transfer mode switching and multiplexing technology |
US6100751A (en) * | 1997-06-20 | 2000-08-08 | Intel Corporation | Forward body biased field effect transistor providing decoupling capacitance |
US6593799B2 (en) | 1997-06-20 | 2003-07-15 | Intel Corporation | Circuit including forward body bias from supply voltage and ground nodes |
US6300819B1 (en) | 1997-06-20 | 2001-10-09 | Intel Corporation | Circuit including forward body bias from supply voltage and ground nodes |
US6218895B1 (en) | 1997-06-20 | 2001-04-17 | Intel Corporation | Multiple well transistor circuits having forward body bias |
US6232827B1 (en) | 1997-06-20 | 2001-05-15 | Intel Corporation | Transistors providing desired threshold voltage and reduced short channel effects with forward body bias |
KR100319164B1 (ko) * | 1997-12-31 | 2002-04-22 | 박종섭 | 다중레벨검출에의한다중구동장치및그방법 |
US6172554B1 (en) * | 1998-09-24 | 2001-01-09 | Mosel Vitelic, Inc. | Power supply insensitive substrate bias voltage detector circuit |
DE19845673A1 (de) * | 1998-10-05 | 2000-04-20 | Fahrzeugklimaregelung Gmbh | Schutzschaltung für einen Leistungs-Feldeffekttransistor (FET) |
KR100307525B1 (ko) * | 1998-11-26 | 2001-11-15 | 김영환 | 기판전압감지제어회로 |
US6262585B1 (en) * | 1999-06-14 | 2001-07-17 | Intel Corporation | Apparatus for I/O leakage self-test in an integrated circuit |
US6448823B1 (en) * | 1999-11-30 | 2002-09-10 | Xilinx, Inc. | Tunable circuit for detection of negative voltages |
JP2001274265A (ja) * | 2000-03-28 | 2001-10-05 | Mitsubishi Electric Corp | 半導体装置 |
JP4834261B2 (ja) * | 2001-09-27 | 2011-12-14 | Okiセミコンダクタ株式会社 | 昇圧電源発生回路 |
JP3794326B2 (ja) * | 2002-01-10 | 2006-07-05 | 富士通株式会社 | 負電圧生成回路及びこれを備えた強誘電体メモリ回路並びに集積回路装置 |
US6621445B1 (en) * | 2002-06-24 | 2003-09-16 | Intel Corporation | Low power reference buffer circuit utilizing switched capacitors |
US6809986B2 (en) * | 2002-08-29 | 2004-10-26 | Micron Technology, Inc. | System and method for negative word line driver circuit |
CN100382419C (zh) | 2002-09-11 | 2008-04-16 | 三菱电机株式会社 | 电压检测电路和使用它的内部电压发生电路 |
US7230453B2 (en) * | 2003-12-29 | 2007-06-12 | Stmicroelectronics Pvt. Ltd. | Output buffer providing multiple voltages |
US7248988B2 (en) * | 2004-03-01 | 2007-07-24 | Transmeta Corporation | System and method for reducing temperature variation during burn in |
US7119604B2 (en) * | 2004-06-17 | 2006-10-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Back-bias voltage regulator having temperature and process variation compensation and related method of regulating a back-bias voltage |
KR100732756B1 (ko) * | 2005-04-08 | 2007-06-27 | 주식회사 하이닉스반도체 | 전압 펌핑장치 |
JP2007226938A (ja) * | 2006-01-25 | 2007-09-06 | Citizen Holdings Co Ltd | 不揮発性半導体記憶装置 |
JP2008191442A (ja) * | 2007-02-06 | 2008-08-21 | Nec Electronics Corp | 表示ドライバic |
US7911261B1 (en) | 2009-04-13 | 2011-03-22 | Netlogic Microsystems, Inc. | Substrate bias circuit and method for integrated circuit device |
US7911263B2 (en) * | 2009-06-30 | 2011-03-22 | International Business Machines Corporation | Leakage current mitigation in a semiconductor device |
WO2013147913A1 (en) * | 2012-03-31 | 2013-10-03 | Intel Corporation | Delay-compensated error indication signal |
KR102433093B1 (ko) | 2016-06-01 | 2022-08-18 | 에스케이하이닉스 주식회사 | 리프레쉬 제어 장치 및 이를 포함하는 메모리 장치 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2412850A1 (fr) * | 1977-04-26 | 1979-07-20 | Suwa Seikosha Kk | Circuit integre a semi-conducteurs |
JPS5513566A (en) * | 1978-07-17 | 1980-01-30 | Hitachi Ltd | Mis field effect semiconductor circuit device |
US4161791A (en) * | 1978-08-28 | 1979-07-17 | Electronic Memories & Magnetics Corporation | Automatic refresh memory cell |
US4492973A (en) * | 1978-12-25 | 1985-01-08 | Tokyo Shibaura Denki Kabushiki Kaisha | MOS Dynamic memory cells and method of fabricating the same |
JPS5632758A (en) * | 1979-08-27 | 1981-04-02 | Fujitsu Ltd | Substrate bias generating circuit |
US4393481A (en) * | 1979-08-31 | 1983-07-12 | Xicor, Inc. | Nonvolatile static random access memory system |
US4263664A (en) * | 1979-08-31 | 1981-04-21 | Xicor, Inc. | Nonvolatile static random access memory system |
US4337524A (en) * | 1980-02-07 | 1982-06-29 | Mostek Corporation | Backup power circuit for biasing bit lines of a static semiconductor memory |
US4460835A (en) * | 1980-05-13 | 1984-07-17 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor integrated circuit device with low power consumption in a standby mode using an on-chip substrate bias generator |
US4438346A (en) * | 1981-10-15 | 1984-03-20 | Advanced Micro Devices, Inc. | Regulated substrate bias generator for random access memory |
JPS58105563A (ja) * | 1981-12-17 | 1983-06-23 | Mitsubishi Electric Corp | 基板バイアス発生回路 |
JPS5965467A (ja) * | 1982-10-06 | 1984-04-13 | Matsushita Electronics Corp | 基板電位発生回路 |
US4585955B1 (en) * | 1982-12-15 | 2000-11-21 | Tokyo Shibaura Electric Co | Internally regulated power voltage circuit for mis semiconductor integrated circuit |
JPS59162690A (ja) * | 1983-03-04 | 1984-09-13 | Nec Corp | 擬似スタテイツクメモリ |
JPH0762958B2 (ja) * | 1983-06-03 | 1995-07-05 | 株式会社日立製作所 | Mos記憶装置 |
US4631421A (en) * | 1984-08-14 | 1986-12-23 | Texas Instruments | CMOS substrate bias generator |
JPS6159688A (ja) * | 1984-08-31 | 1986-03-27 | Hitachi Ltd | 半導体集積回路装置 |
US4670861A (en) * | 1985-06-21 | 1987-06-02 | Advanced Micro Devices, Inc. | CMOS N-well bias generator and gating system |
JPH07113863B2 (ja) * | 1985-06-29 | 1995-12-06 | 株式会社東芝 | 半導体集積回路装置 |
US4769787A (en) * | 1985-07-26 | 1988-09-06 | Hitachi, Ltd. | Semiconductor memory device |
-
1984
- 1984-08-31 JP JP59180534A patent/JPS6159688A/ja active Pending
-
1985
- 1985-08-03 KR KR1019850005597A patent/KR940001638B1/ko not_active IP Right Cessation
- 1985-08-08 US US06/763,615 patent/US4775959A/en not_active Expired - Lifetime
- 1985-08-30 EP EP85110960A patent/EP0173980B1/en not_active Expired - Lifetime
-
1988
- 1988-09-27 US US07/249,660 patent/US4964082A/en not_active Ceased
-
1992
- 1992-10-16 US US07/962,329 patent/USRE34797E/en not_active Expired - Lifetime
- 1992-12-07 KR KR1019920023476A patent/KR940001641B1/ko not_active IP Right Cessation
- 1992-12-07 KR KR1019920023475A patent/KR940001640B1/ko not_active IP Right Cessation
- 1992-12-07 KR KR1019920023478A patent/KR940001643B1/ko not_active IP Right Cessation
- 1992-12-07 KR KR1019920023477A patent/KR940001642B1/ko not_active IP Right Cessation
-
1994
- 1994-10-27 SG SG157794A patent/SG157794G/en unknown
-
1995
- 1995-06-01 HK HK85295A patent/HK85295A/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR940001641B1 (ko) | 1994-02-28 |
KR940001643B1 (ko) | 1994-02-28 |
HK85295A (en) | 1995-06-09 |
EP0173980A2 (en) | 1986-03-12 |
EP0173980B1 (en) | 1992-11-04 |
USRE34797E (en) | 1994-11-22 |
EP0173980A3 (en) | 1989-12-06 |
KR940001638B1 (ko) | 1994-02-28 |
KR940001640B1 (ko) | 1994-02-28 |
JPS6159688A (ja) | 1986-03-27 |
US4964082A (en) | 1990-10-16 |
KR940001642B1 (ko) | 1994-02-28 |
US4775959A (en) | 1988-10-04 |
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