FR2412850A1 - Circuit integre a semi-conducteurs - Google Patents

Circuit integre a semi-conducteurs

Info

Publication number
FR2412850A1
FR2412850A1 FR7812180A FR7812180A FR2412850A1 FR 2412850 A1 FR2412850 A1 FR 2412850A1 FR 7812180 A FR7812180 A FR 7812180A FR 7812180 A FR7812180 A FR 7812180A FR 2412850 A1 FR2412850 A1 FR 2412850A1
Authority
FR
France
Prior art keywords
voltage
circuit
reference voltage
level
produced
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7812180A
Other languages
English (en)
Other versions
FR2412850B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suwa Seikosha KK
Original Assignee
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP4829077A external-priority patent/JPS53132980A/ja
Priority claimed from JP4829177A external-priority patent/JPS6035627B2/ja
Application filed by Suwa Seikosha KK filed Critical Suwa Seikosha KK
Publication of FR2412850A1 publication Critical patent/FR2412850A1/fr
Application granted granted Critical
Publication of FR2412850B1 publication Critical patent/FR2412850B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/165—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
    • G01R19/16566—Circuits and arrangements for comparing voltage or current with one or several thresholds and for indicating the result not covered by subgroups G01R19/16504, G01R19/16528, G01R19/16533
    • G01R19/16571—Circuits and arrangements for comparing voltage or current with one or several thresholds and for indicating the result not covered by subgroups G01R19/16504, G01R19/16528, G01R19/16533 comparing AC or DC current with one threshold, e.g. load current, over-current, surge current or fault current
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R35/00—Testing or calibrating of apparatus covered by the other groups of this subclass
    • G01R35/005—Calibrating; Standards or reference devices, e.g. voltage or resistance standards, "golden" references
    • G—PHYSICS
    • G04—HOROLOGY
    • G04C—ELECTROMECHANICAL CLOCKS OR WATCHES
    • G04C10/00—Arrangements of electric power supplies in time pieces
    • G04C10/04—Arrangements of electric power supplies in time pieces with means for indicating the condition of the power supply
    • G—PHYSICS
    • G04—HOROLOGY
    • G04G—ELECTRONIC TIME-PIECES
    • G04G19/00—Electric power supply circuits specially adapted for use in electronic time-pieces
    • G04G19/02—Conversion or regulation of current or voltage
    • G04G19/06—Regulation
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Nonlinear Science (AREA)
  • Automation & Control Theory (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Measurement Of Current Or Voltage (AREA)
  • Details Of Television Scanning (AREA)
  • Control Of Charge By Means Of Generators (AREA)
  • Emergency Protection Circuit Devices (AREA)

Abstract

L'INVENTION CONCERNE UN CIRCUIT INTEGRE A SEMI-CONDUCTEUR, A REGLAGE INTERNE. IL COMPORTE DES ELEMENTS DE MEMOIRE PERMANENTE QUI PEUVENT ETRE COMMANDES PAR L'EXTERIEUR ET QUI PERMETTENT D'EFFECTUER DES REGLAGES INTERNES DU CIRCUIT INTEGRE. DES TENSIONS DE REFERENCE ET DES TENSIONS DE COMPARAISON SONT PRODUITES PAR DES DIVISEURS DE TENSION DE MANIERE A ETRE INSENSIBLES AUX VARIATIONS DE TEMPERATURE ET AUX VARIATIONS DE TENSION D'ALIMENTATION. L'INVENTION S'APPLIQUE NOTAMMENT A UN CIRCUIT DE DETECTION DE TENSION.
FR7812180A 1977-04-26 1978-04-25 Circuit integre a semi-conducteurs Granted FR2412850A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP4829077A JPS53132980A (en) 1977-04-26 1977-04-26 Semiconductor integrated circuit
JP4829177A JPS6035627B2 (ja) 1977-04-26 1977-04-26 電圧検出回路

Publications (2)

Publication Number Publication Date
FR2412850A1 true FR2412850A1 (fr) 1979-07-20
FR2412850B1 FR2412850B1 (fr) 1983-10-07

Family

ID=26388529

Family Applications (2)

Application Number Title Priority Date Filing Date
FR7812180A Granted FR2412850A1 (fr) 1977-04-26 1978-04-25 Circuit integre a semi-conducteurs
FR7835531A Granted FR2412851A1 (fr) 1977-04-26 1978-12-18 Circuit de detection de tension

Family Applications After (1)

Application Number Title Priority Date Filing Date
FR7835531A Granted FR2412851A1 (fr) 1977-04-26 1978-12-18 Circuit de detection de tension

Country Status (6)

Country Link
US (3) US4258310A (fr)
CH (1) CH639810B (fr)
DE (1) DE2818085C2 (fr)
FR (2) FR2412850A1 (fr)
GB (1) GB1602898A (fr)
HK (1) HK52284A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2477799A1 (fr) * 1980-03-07 1981-09-11 Bulova Watch Co Inc Appareil electronique miniature, notamment montre-bracelet electronique

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AU8831982A (en) * 1981-10-09 1983-04-14 Toowoomba Foundry Pty. Ltd. Regulating solar generator output
US4495405A (en) * 1982-09-23 1985-01-22 Coulter Electronics, Inc. Automatic control system including error processing loop
JPS6093531A (ja) * 1983-10-27 1985-05-25 Nec Corp 基準電圧発生回路
US4617473A (en) * 1984-01-03 1986-10-14 Intersil, Inc. CMOS backup power switching circuit
JPS6159688A (ja) * 1984-08-31 1986-03-27 Hitachi Ltd 半導体集積回路装置
US4719600A (en) * 1986-02-18 1988-01-12 International Business Machines Corporation Sense circuit for multilevel storage system
CH681928A5 (fr) * 1989-04-26 1993-06-15 Seiko Epson Corp
US5146151A (en) * 1990-06-08 1992-09-08 United Technologies Corporation Floating voltage reference having dual output voltage
US5329193A (en) * 1992-11-12 1994-07-12 Lu Chao Cheng Computer controller
US5534770A (en) * 1992-12-17 1996-07-09 Texas Instruments Incorporated Method and device for resistive load compensation
FR2706620B1 (fr) * 1993-06-11 1995-07-21 Sgs Thomson Microelectronics Circuit intégré comportant un circuit de détection du niveau d'une tension de service.
DE59309986D1 (de) * 1993-09-21 2000-04-27 Siemens Ag Schaltungsanordnung zum Versorgen von elektrischen Verbrauchern mit einer konstanten Spannung
US5847552A (en) * 1995-01-24 1998-12-08 Dell Usa, L.P. Integrated circuit with determinate power source control
US5787014A (en) * 1996-03-29 1998-07-28 Intel Corporation Method and apparatus for automatically controlling integrated circuit supply voltages
KR100239692B1 (ko) * 1996-07-27 2000-01-15 김영환 반도체 장치의 출력회로
FR2757711B1 (fr) * 1996-12-19 2000-01-14 Sgs Thomson Microelectronics Dispositif de decalage de niveau
US6262567B1 (en) 1997-08-01 2001-07-17 Lsi Logic Corporation Automatic power supply sensing with on-chip regulation
US6271693B1 (en) * 1997-12-12 2001-08-07 United Microelectronics Corp. Multi-function switched-current magnitude sorter
JP3139542B2 (ja) * 1998-01-28 2001-03-05 日本電気株式会社 参照電圧発生回路
US6054847A (en) * 1998-09-09 2000-04-25 International Business Machines Corp. Method and apparatus to automatically select operating voltages for a device
US6384723B1 (en) * 1998-11-02 2002-05-07 Pittway Corporation Digital communication system and method
US6772356B1 (en) 2000-04-05 2004-08-03 Advanced Micro Devices, Inc. System for specifying core voltage for a microprocessor by selectively outputting one of a first, fixed and a second, variable voltage control settings from the microprocessor
US7049855B2 (en) * 2001-06-28 2006-05-23 Intel Corporation Area efficient waveform evaluation and DC offset cancellation circuits
DE10162766A1 (de) * 2001-12-20 2003-07-03 Koninkl Philips Electronics Nv Schaltungsanordnung zur Spannungsversorgung einer Flüssigkristallanzeigevorrichtung
US6919811B1 (en) * 2003-05-30 2005-07-19 National Semiconductor Corporation Charger detection and enable circuit
US7016249B2 (en) * 2003-06-30 2006-03-21 Intel Corporation Reference voltage generator
TWI279133B (en) * 2005-06-14 2007-04-11 Uniwill Comp Corp A digital video receiving system and its method
US7752391B2 (en) * 2006-01-20 2010-07-06 Apple Inc. Variable caching policy system and method
JP4533328B2 (ja) * 2006-02-28 2010-09-01 株式会社リコー 充電制御用半導体集積回路、その充電制御用半導体集積回路を使用した充電装置及び２次電池接続検出方法
JP2007327804A (ja) * 2006-06-07 2007-12-20 Nec Electronics Corp 電圧降下測定回路
US7564292B2 (en) * 2007-09-28 2009-07-21 Alpha & Omega Semiconductor, Inc. Device and method for limiting Di/Dt caused by a switching FET of an inductive switching circuit
US8878511B2 (en) * 2010-02-04 2014-11-04 Semiconductor Components Industries, Llc Current-mode programmable reference circuits and methods therefor
US8188785B2 (en) 2010-02-04 2012-05-29 Semiconductor Components Industries, Llc Mixed-mode circuits and methods of producing a reference current and a reference voltage
US8680840B2 (en) * 2010-02-11 2014-03-25 Semiconductor Components Industries, Llc Circuits and methods of producing a reference current or voltage
JP5554134B2 (ja) * 2010-04-27 2014-07-23 ローム株式会社 電流生成回路およびそれを用いた基準電圧回路
US9819271B2 (en) * 2013-09-30 2017-11-14 O2Micro, Inc. Power converters
CN105723617B (zh) * 2013-11-15 2018-07-31 旭化成微电子株式会社 电压检测器、基准电压设定方法以及存储介质
JP6385176B2 (ja) * 2014-07-16 2018-09-05 エイブリック株式会社 アナログ電子時計
CN107478992B (zh) * 2016-06-08 2020-04-24 比亚迪股份有限公司 电压检测与判断电路和具有其的动力电池系统
JP6431135B1 (ja) * 2017-06-13 2018-11-28 ファナック株式会社 比較器の閾値を調整する機能を有するエンコーダ及びエンコーダの制御方法
JP6431136B1 (ja) * 2017-06-13 2018-11-28 ファナック株式会社 比較器の閾値を調整する機能を有するエンコーダ及びエンコーダの制御方法
US11171640B2 (en) * 2018-05-02 2021-11-09 Texas Instruments Incorporated Temperature-sensitive transistor gate driver

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2477799A1 (fr) * 1980-03-07 1981-09-11 Bulova Watch Co Inc Appareil electronique miniature, notamment montre-bracelet electronique

Also Published As

Publication number Publication date
DE2818085C2 (de) 1986-05-22
FR2412851A1 (fr) 1979-07-20
CH639810B (fr)
GB1602898A (en) 1981-11-18
DE2818085A1 (de) 1978-11-09
US4258310A (en) 1981-03-24
HK52284A (en) 1984-07-13
FR2412850B1 (fr) 1983-10-07
US4377781A (en) 1983-03-22
US4498040A (en) 1985-02-05
CH639810GA3 (fr) 1983-12-15
FR2412851B1 (fr) 1983-08-19

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