SG116542A1 - Lithographic apparatus, device manufacturing method. - Google Patents

Lithographic apparatus, device manufacturing method.

Info

Publication number
SG116542A1
SG116542A1 SG200402415A SG200402415A SG116542A1 SG 116542 A1 SG116542 A1 SG 116542A1 SG 200402415 A SG200402415 A SG 200402415A SG 200402415 A SG200402415 A SG 200402415A SG 116542 A1 SG116542 A1 SG 116542A1
Authority
SG
Singapore
Prior art keywords
device manufacturing
lithographic apparatus
lithographic
manufacturing
Prior art date
Application number
SG200402415A
Other languages
English (en)
Inventor
Streefkerk Bob
Roelof Loopstra Christiaa Erik
Catharinus Hubertus M Johannes
Petrus Matthijs Van N Gerardus
Simon Klaus
Antonius Slaghekke Bernardus
Straaijer Alexander
Cornelis Van Der To Jan-Gerard
Houkes Martijn
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of SG116542A1 publication Critical patent/SG116542A1/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70341Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • EFIXED CONSTRUCTIONS
    • E02HYDRAULIC ENGINEERING; FOUNDATIONS; SOIL SHIFTING
    • E02FDREDGING; SOIL-SHIFTING
    • E02F9/00Component parts of dredgers or soil-shifting machines, not restricted to one of the kinds covered by groups E02F3/00 - E02F7/00
    • E02F9/20Drives; Control devices
    • E02F9/22Hydraulic or pneumatic drives
    • E02F9/2264Arrangements or adaptations of elements for hydraulic drives
    • E02F9/2267Valves or distributors
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F15FLUID-PRESSURE ACTUATORS; HYDRAULICS OR PNEUMATICS IN GENERAL
    • F15BSYSTEMS ACTING BY MEANS OF FLUIDS IN GENERAL; FLUID-PRESSURE ACTUATORS, e.g. SERVOMOTORS; DETAILS OF FLUID-PRESSURE SYSTEMS, NOT OTHERWISE PROVIDED FOR
    • F15B13/00Details of servomotor systems ; Valves for servomotor systems
    • F15B13/02Fluid distribution or supply devices characterised by their adaptation to the control of servomotors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70525Controlling normal operating mode, e.g. matching different apparatus, remote control or prediction of failure
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/709Vibration, e.g. vibration detection, compensation, suppression or isolation

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Environmental & Geological Engineering (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Engineering & Computer Science (AREA)
  • Civil Engineering (AREA)
  • Mining & Mineral Resources (AREA)
  • Mechanical Engineering (AREA)
  • Structural Engineering (AREA)
  • Fluid Mechanics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
SG200402415A 2003-05-13 2004-05-06 Lithographic apparatus, device manufacturing method. SG116542A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP03252955 2003-05-13
EP03256643 2003-10-22

Publications (1)

Publication Number Publication Date
SG116542A1 true SG116542A1 (en) 2005-11-28

Family

ID=33542566

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200402415A SG116542A1 (en) 2003-05-13 2004-05-06 Lithographic apparatus, device manufacturing method.

Country Status (6)

Country Link
US (8) US7352434B2 (ko)
JP (4) JP4115964B2 (ko)
KR (1) KR100620980B1 (ko)
CN (1) CN1264065C (ko)
SG (1) SG116542A1 (ko)
TW (1) TWI295414B (ko)

Families Citing this family (219)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040031167A1 (en) * 2002-06-13 2004-02-19 Stein Nathan D. Single wafer method and apparatus for drying semiconductor substrates using an inert gas air-knife
SG121818A1 (en) 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US10503084B2 (en) 2002-11-12 2019-12-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
CN100568101C (zh) * 2002-11-12 2009-12-09 Asml荷兰有限公司 光刻装置和器件制造方法
US7372541B2 (en) * 2002-11-12 2008-05-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9482966B2 (en) 2002-11-12 2016-11-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE10261775A1 (de) 2002-12-20 2004-07-01 Carl Zeiss Smt Ag Vorrichtung zur optischen Vermessung eines Abbildungssystems
KR101506408B1 (ko) * 2003-02-26 2015-03-26 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
KR101364889B1 (ko) 2003-04-10 2014-02-19 가부시키가이샤 니콘 액침 리소그래피 장치용 진공 배출을 포함하는 환경 시스템
EP1611486B1 (en) * 2003-04-10 2016-03-16 Nikon Corporation Environmental system including a transport region for an immersion lithography apparatus
SG10201803122UA (en) * 2003-04-11 2018-06-28 Nikon Corp Immersion lithography apparatus and device manufacturing method
KR101861493B1 (ko) 2003-04-11 2018-05-28 가부시키가이샤 니콘 액침 리소그래피 머신에서 웨이퍼 교환동안 투영 렌즈 아래의 갭에서 액침 액체를 유지하는 장치 및 방법
TWI295414B (en) * 2003-05-13 2008-04-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
WO2004102646A1 (ja) * 2003-05-15 2004-11-25 Nikon Corporation 露光装置及びデバイス製造方法
TWI474380B (zh) * 2003-05-23 2015-02-21 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
TWI421911B (zh) 2003-05-23 2014-01-01 尼康股份有限公司 An exposure method, an exposure apparatus, and an element manufacturing method
KR101915914B1 (ko) * 2003-05-28 2018-11-06 가부시키가이샤 니콘 노광 방법, 노광 장치, 및 디바이스 제조 방법
US7213963B2 (en) 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP2261741A3 (en) 2003-06-11 2011-05-25 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101940892B1 (ko) * 2003-06-13 2019-01-21 가부시키가이샤 니콘 노광 방법, 기판 스테이지, 노광 장치, 및 디바이스 제조 방법
US6867844B2 (en) 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
KR101686762B1 (ko) 2003-06-19 2016-12-28 가부시키가이샤 니콘 노광 장치 및 디바이스 제조방법
US6809794B1 (en) * 2003-06-27 2004-10-26 Asml Holding N.V. Immersion photolithography system and method using inverted wafer-projection optics interface
DE60308161T2 (de) 2003-06-27 2007-08-09 Asml Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung eines Artikels
JP2007527615A (ja) * 2003-07-01 2007-09-27 株式会社ニコン 同位体特定流体の光学素子としての使用方法
WO2005010611A2 (en) * 2003-07-08 2005-02-03 Nikon Corporation Wafer table for immersion lithography
WO2005006418A1 (ja) * 2003-07-09 2005-01-20 Nikon Corporation 露光装置及びデバイス製造方法
EP2264531B1 (en) 2003-07-09 2013-01-16 Nikon Corporation Exposure apparatus and device manufacturing method
EP1643543B1 (en) 2003-07-09 2010-11-24 Nikon Corporation Exposure apparatus and method for manufacturing device
US7738074B2 (en) * 2003-07-16 2010-06-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP3346485A1 (en) 2003-07-25 2018-07-11 Nikon Corporation Projection optical system inspecting method and inspection apparatus, and a projection optical system manufacturing method
KR101343720B1 (ko) * 2003-07-28 2013-12-20 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법, 그리고 노광 장치의제어 방법
EP1503244A1 (en) * 2003-07-28 2005-02-02 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method
US7779781B2 (en) 2003-07-31 2010-08-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2005022616A1 (ja) * 2003-08-29 2005-03-10 Nikon Corporation 露光装置及びデバイス製造方法
TWI263859B (en) 2003-08-29 2006-10-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
JP4288426B2 (ja) 2003-09-03 2009-07-01 株式会社ニコン 液浸リソグラフィのための流体の供給装置及び方法
JP4444920B2 (ja) * 2003-09-19 2010-03-31 株式会社ニコン 露光装置及びデバイス製造方法
KR101323396B1 (ko) 2003-09-29 2013-10-29 가부시키가이샤 니콘 노광장치, 노광방법 및 디바이스 제조방법
JP4335213B2 (ja) 2003-10-08 2009-09-30 株式会社蔵王ニコン 基板搬送装置、露光装置、デバイス製造方法
JP2005136364A (ja) * 2003-10-08 2005-05-26 Zao Nikon Co Ltd 基板搬送装置、露光装置、並びにデバイス製造方法
KR101203028B1 (ko) 2003-10-08 2012-11-21 가부시키가이샤 자오 니콘 기판 반송 장치 및 기판 반송 방법, 노광 장치 및 노광 방법, 디바이스 제조 방법
TW201738932A (zh) 2003-10-09 2017-11-01 Nippon Kogaku Kk 曝光裝置及曝光方法、元件製造方法
JP2005150290A (ja) * 2003-11-13 2005-06-09 Canon Inc 露光装置およびデバイスの製造方法
JP4295712B2 (ja) 2003-11-14 2009-07-15 エーエスエムエル ネザーランズ ビー.ブイ. リソグラフィ装置及び装置製造方法
KR101682884B1 (ko) 2003-12-03 2016-12-06 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법, 그리고 광학 부품
KR101681852B1 (ko) * 2003-12-15 2016-12-01 가부시키가이샤 니콘 스테이지 장치, 노광 장치, 및 노광 방법
JPWO2005057635A1 (ja) * 2003-12-15 2007-07-05 株式会社ニコン 投影露光装置及びステージ装置、並びに露光方法
US20070081133A1 (en) * 2004-12-14 2007-04-12 Niikon Corporation Projection exposure apparatus and stage unit, and exposure method
JP4710611B2 (ja) * 2004-01-15 2011-06-29 株式会社ニコン 露光装置及びデバイスの製造方法並びに露光方法
US7589822B2 (en) * 2004-02-02 2009-09-15 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
KR101377815B1 (ko) 2004-02-03 2014-03-26 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
TW201816844A (zh) * 2004-03-25 2018-05-01 日商尼康股份有限公司 曝光裝置、曝光方法、及元件製造方法
US7034917B2 (en) * 2004-04-01 2006-04-25 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby
KR101330370B1 (ko) 2004-04-19 2013-11-15 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US8054448B2 (en) 2004-05-04 2011-11-08 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
US7616383B2 (en) * 2004-05-18 2009-11-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7486381B2 (en) * 2004-05-21 2009-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101257960B1 (ko) 2004-06-04 2013-04-24 칼 짜이스 에스엠테 게엠베하 광학적 결상 시스템의 결상 품질을 측정하기 위한 시스템
KR101421915B1 (ko) * 2004-06-09 2014-07-22 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US8373843B2 (en) * 2004-06-10 2013-02-12 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
KR101485650B1 (ko) 2004-06-10 2015-01-23 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
US8508713B2 (en) * 2004-06-10 2013-08-13 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8717533B2 (en) * 2004-06-10 2014-05-06 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US7688421B2 (en) * 2004-06-17 2010-03-30 Nikon Corporation Fluid pressure compensation for immersion lithography lens
WO2006007111A2 (en) * 2004-07-01 2006-01-19 Nikon Corporation A dynamic fluid control system for immersion lithography
US7463330B2 (en) 2004-07-07 2008-12-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE602005016429D1 (de) * 2004-07-12 2009-10-15 Nippon Kogaku Kk Hren
JP3870207B2 (ja) * 2004-08-05 2007-01-17 キヤノン株式会社 液浸露光装置及びデバイス製造方法
US7304715B2 (en) 2004-08-13 2007-12-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR20070048164A (ko) * 2004-08-18 2007-05-08 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US7701550B2 (en) 2004-08-19 2010-04-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060044533A1 (en) * 2004-08-27 2006-03-02 Asmlholding N.V. System and method for reducing disturbances caused by movement in an immersion lithography system
CN100539019C (zh) * 2004-09-17 2009-09-09 株式会社尼康 曝光装置、曝光方法以及器件制造方法
KR101264939B1 (ko) 2004-09-17 2013-05-15 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
US7522261B2 (en) * 2004-09-24 2009-04-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7411657B2 (en) * 2004-11-17 2008-08-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7161654B2 (en) * 2004-12-02 2007-01-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7256121B2 (en) * 2004-12-02 2007-08-14 Texas Instruments Incorporated Contact resistance reduction by new barrier stack process
US7446850B2 (en) * 2004-12-03 2008-11-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7397533B2 (en) * 2004-12-07 2008-07-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7196770B2 (en) * 2004-12-07 2007-03-27 Asml Netherlands B.V. Prewetting of substrate before immersion exposure
US7180571B2 (en) * 2004-12-08 2007-02-20 Asml Netherlands B.V. Lithographic projection apparatus and actuator
US7365827B2 (en) * 2004-12-08 2008-04-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7352440B2 (en) 2004-12-10 2008-04-01 Asml Netherlands B.V. Substrate placement in immersion lithography
US7403261B2 (en) * 2004-12-15 2008-07-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2006173295A (ja) * 2004-12-15 2006-06-29 Jsr Corp 液浸型露光装置及び液浸型露光方法
US7528931B2 (en) 2004-12-20 2009-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7880860B2 (en) * 2004-12-20 2011-02-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4569291B2 (ja) * 2004-12-24 2010-10-27 株式会社ニコン 露光装置及びデバイス製造方法
US7405805B2 (en) 2004-12-28 2008-07-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7491661B2 (en) * 2004-12-28 2009-02-17 Asml Netherlands B.V. Device manufacturing method, top coat material and substrate
US20060147821A1 (en) * 2004-12-30 2006-07-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
SG124351A1 (en) * 2005-01-14 2006-08-30 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
SG124359A1 (en) * 2005-01-14 2006-08-30 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7903233B2 (en) * 2005-01-21 2011-03-08 Nikon Corporation Offset partial ring seal in immersion lithographic system
JP2011258999A (ja) * 2005-01-31 2011-12-22 Nikon Corp 露光装置及びデバイス製造方法
US8692973B2 (en) * 2005-01-31 2014-04-08 Nikon Corporation Exposure apparatus and method for producing device
KR20180125636A (ko) * 2005-01-31 2018-11-23 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
JP5005226B2 (ja) * 2005-01-31 2012-08-22 株式会社ニコン 露光装置及びデバイス製造方法、液体保持方法
SG155256A1 (en) * 2005-02-10 2009-09-30 Asml Netherlands Bv Immersion liquid, exposure apparatus, and exposure process
JP5343958B2 (ja) * 2005-02-21 2013-11-13 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
JP4807086B2 (ja) * 2005-02-21 2011-11-02 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
US7378025B2 (en) 2005-02-22 2008-05-27 Asml Netherlands B.V. Fluid filtration method, fluid filtered thereby, lithographic apparatus and device manufacturing method
US8018573B2 (en) 2005-02-22 2011-09-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7224431B2 (en) * 2005-02-22 2007-05-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7428038B2 (en) 2005-02-28 2008-09-23 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and apparatus for de-gassing a liquid
US7282701B2 (en) * 2005-02-28 2007-10-16 Asml Netherlands B.V. Sensor for use in a lithographic apparatus
JP4262252B2 (ja) * 2005-03-02 2009-05-13 キヤノン株式会社 露光装置
US7324185B2 (en) 2005-03-04 2008-01-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7684010B2 (en) * 2005-03-09 2010-03-23 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method, seal structure, method of removing an object and a method of sealing
KR20070115859A (ko) * 2005-03-18 2007-12-06 가부시키가이샤 니콘 노광 방법 및 노광 장치, 디바이스 제조 방법, 그리고 노광장치의 평가 방법
US7330238B2 (en) * 2005-03-28 2008-02-12 Asml Netherlands, B.V. Lithographic apparatus, immersion projection apparatus and device manufacturing method
US20070132976A1 (en) * 2005-03-31 2007-06-14 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
TW200644079A (en) * 2005-03-31 2006-12-16 Nikon Corp Exposure apparatus, exposure method, and device production method
US7411654B2 (en) * 2005-04-05 2008-08-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7291850B2 (en) * 2005-04-08 2007-11-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
USRE43576E1 (en) 2005-04-08 2012-08-14 Asml Netherlands B.V. Dual stage lithographic apparatus and device manufacturing method
US20060232753A1 (en) * 2005-04-19 2006-10-19 Asml Holding N.V. Liquid immersion lithography system with tilted liquid flow
JP5125505B2 (ja) 2005-04-25 2013-01-23 株式会社ニコン 露光方法及び露光装置、並びにデバイス製造方法
US8248577B2 (en) 2005-05-03 2012-08-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7433016B2 (en) * 2005-05-03 2008-10-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7317507B2 (en) * 2005-05-03 2008-01-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2006339448A (ja) 2005-06-02 2006-12-14 Canon Inc 受光ユニットを有する露光装置
US7652746B2 (en) * 2005-06-21 2010-01-26 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7751027B2 (en) 2005-06-21 2010-07-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4708876B2 (ja) * 2005-06-21 2011-06-22 キヤノン株式会社 液浸露光装置
US7474379B2 (en) 2005-06-28 2009-01-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7834974B2 (en) * 2005-06-28 2010-11-16 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7468779B2 (en) * 2005-06-28 2008-12-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7170583B2 (en) * 2005-06-29 2007-01-30 Asml Netherlands B.V. Lithographic apparatus immersion damage control
JP5194792B2 (ja) * 2005-06-30 2013-05-08 株式会社ニコン 露光装置及び方法、露光装置のメンテナンス方法、並びにデバイス製造方法
US20070002336A1 (en) * 2005-06-30 2007-01-04 Asml Netherlands B.V. Metrology apparatus, lithographic apparatus, process apparatus, metrology method and device manufacturing method
US8054445B2 (en) * 2005-08-16 2011-11-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7580112B2 (en) * 2005-08-25 2009-08-25 Nikon Corporation Containment system for immersion fluid in an immersion lithography apparatus
KR101388345B1 (ko) 2005-09-09 2014-04-22 가부시키가이샤 니콘 노광 장치 및 노광 방법, 그리고 디바이스 제조 방법
US20070058263A1 (en) * 2005-09-13 2007-03-15 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and methods for immersion lithography
JP4125315B2 (ja) * 2005-10-11 2008-07-30 キヤノン株式会社 露光装置及びデバイス製造方法
JPWO2007055237A1 (ja) * 2005-11-09 2009-04-30 株式会社ニコン 露光装置及び露光方法、並びにデバイス製造方法
CN1963675B (zh) * 2005-11-11 2012-12-05 台湾积体电路制造股份有限公司 浸没式微影设备及制程
US7804577B2 (en) * 2005-11-16 2010-09-28 Asml Netherlands B.V. Lithographic apparatus
JP4567651B2 (ja) * 2005-11-16 2010-10-20 エーエスエムエル ネザーランズ ビー.ブイ. 露光装置及びデバイス製造方法
US7864292B2 (en) 2005-11-16 2011-01-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7656501B2 (en) * 2005-11-16 2010-02-02 Asml Netherlands B.V. Lithographic apparatus
US7633073B2 (en) * 2005-11-23 2009-12-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7773195B2 (en) * 2005-11-29 2010-08-10 Asml Holding N.V. System and method to increase surface tension and contact angle in immersion lithography
US20070124987A1 (en) * 2005-12-05 2007-06-07 Brown Jeffrey K Electronic pest control apparatus
US7420194B2 (en) 2005-12-27 2008-09-02 Asml Netherlands B.V. Lithographic apparatus and substrate edge seal
US7839483B2 (en) * 2005-12-28 2010-11-23 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a control system
US7649611B2 (en) 2005-12-30 2010-01-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4984810B2 (ja) * 2006-02-16 2012-07-25 株式会社ニコン 露光方法、露光装置及びフォトマスク
US8045134B2 (en) 2006-03-13 2011-10-25 Asml Netherlands B.V. Lithographic apparatus, control system and device manufacturing method
JP4889331B2 (ja) * 2006-03-22 2012-03-07 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
JP2007266504A (ja) * 2006-03-29 2007-10-11 Canon Inc 露光装置
EP1843206B1 (en) * 2006-04-06 2012-09-05 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US9477158B2 (en) * 2006-04-14 2016-10-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP2023378B1 (en) * 2006-05-10 2013-03-13 Nikon Corporation Exposure apparatus and device manufacturing method
US7969548B2 (en) * 2006-05-22 2011-06-28 Asml Netherlands B.V. Lithographic apparatus and lithographic apparatus cleaning method
US7532309B2 (en) * 2006-06-06 2009-05-12 Nikon Corporation Immersion lithography system and method having an immersion fluid containment plate for submerging the substrate to be imaged in immersion fluid
US7656502B2 (en) * 2006-06-22 2010-02-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20080100812A1 (en) * 2006-10-26 2008-05-01 Nikon Corporation Immersion lithography system and method having a wafer chuck made of a porous material
US8045135B2 (en) * 2006-11-22 2011-10-25 Asml Netherlands B.V. Lithographic apparatus with a fluid combining unit and related device manufacturing method
US8634053B2 (en) 2006-12-07 2014-01-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9632425B2 (en) 2006-12-07 2017-04-25 Asml Holding N.V. Lithographic apparatus, a dryer and a method of removing liquid from a surface
US7791709B2 (en) * 2006-12-08 2010-09-07 Asml Netherlands B.V. Substrate support and lithographic process
JP2008147577A (ja) * 2006-12-13 2008-06-26 Canon Inc 露光装置及びデバイス製造方法
US8654305B2 (en) * 2007-02-15 2014-02-18 Asml Holding N.V. Systems and methods for insitu lens cleaning in immersion lithography
US8817226B2 (en) 2007-02-15 2014-08-26 Asml Holding N.V. Systems and methods for insitu lens cleaning using ozone in immersion lithography
JP2008227007A (ja) * 2007-03-09 2008-09-25 Toshiba Corp 液浸露光方法及び液浸露光装置
US8068209B2 (en) * 2007-03-23 2011-11-29 Nikon Corporation Nozzle to help reduce the escape of immersion liquid from an immersion lithography tool
US8947629B2 (en) * 2007-05-04 2015-02-03 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
US8011377B2 (en) 2007-05-04 2011-09-06 Asml Netherlands B.V. Cleaning device and a lithographic apparatus cleaning method
US7866330B2 (en) * 2007-05-04 2011-01-11 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
US7841352B2 (en) * 2007-05-04 2010-11-30 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
US7576833B2 (en) * 2007-06-28 2009-08-18 Nikon Corporation Gas curtain type immersion lithography tool using porous material for fluid removal
US7708289B2 (en) * 2007-09-07 2010-05-04 Jaime Sr Richard A Removable tubular variable lighting system for a skateboard
US8681308B2 (en) * 2007-09-13 2014-03-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7967960B2 (en) * 2007-11-06 2011-06-28 United Microelectronics Corp. Fluid-confining apparatus
JP2009188241A (ja) * 2008-02-07 2009-08-20 Toshiba Corp 液浸露光装置及び液浸露光方法
KR101448152B1 (ko) * 2008-03-26 2014-10-07 삼성전자주식회사 수직 포토게이트를 구비한 거리측정 센서 및 그를 구비한입체 컬러 이미지 센서
US8233139B2 (en) * 2008-03-27 2012-07-31 Nikon Corporation Immersion system, exposure apparatus, exposing method, and device fabricating method
JP5097166B2 (ja) * 2008-05-28 2012-12-12 エーエスエムエル ネザーランズ ビー.ブイ. リソグラフィ装置及び装置の動作方法
EP2131242A1 (en) * 2008-06-02 2009-12-09 ASML Netherlands B.V. Substrate table, lithographic apparatus and device manufacturing method
NL1036924A1 (nl) * 2008-06-02 2009-12-03 Asml Netherlands Bv Substrate table, lithographic apparatus and device manufacturing method.
SG159467A1 (en) * 2008-09-02 2010-03-30 Asml Netherlands Bv Fluid handling structure, lithographic apparatus and device manufacturing method
KR101059288B1 (ko) * 2008-11-18 2011-08-24 대구텍 유한회사 드릴용 절삭공구
EP2221669A3 (en) * 2009-02-19 2011-02-09 ASML Netherlands B.V. A lithographic apparatus, a method of controlling the apparatus and a device manufacturing method
US8226009B2 (en) * 2009-04-29 2012-07-24 Hand Held Products, Inc. Laser scanner with improved decoding
US8282004B2 (en) * 2009-04-29 2012-10-09 Hand Held Products, Inc. Focusing apparatus and terminal comprising variable focus lens assembly
US8038066B2 (en) * 2009-04-29 2011-10-18 Hand Held Products, Inc. Laser scanner with deformable lens
US8305691B2 (en) * 2009-04-29 2012-11-06 Hand Held Products, Inc. Fluid lens element for use in changing thermal operating environment
EP2264529A3 (en) * 2009-06-16 2011-02-09 ASML Netherlands B.V. A lithographic apparatus, a method of controlling the apparatus and a method of manufacturing a device using a lithographic apparatus
NL2005207A (en) * 2009-09-28 2011-03-29 Asml Netherlands Bv Heat pipe, lithographic apparatus and device manufacturing method.
US8946514B2 (en) * 2009-12-28 2015-02-03 E.I. Du Pont De Nemours And Company Sorghum fertility restorer genotypes and methods of marker-assisted selection
NL2006196A (en) 2010-03-12 2011-09-13 Asml Netherlands Bv Lithographic apparatus and method.
NL2006244A (en) * 2010-03-16 2011-09-19 Asml Netherlands Bv Lithographic apparatus, cover for use in a lithographic apparatus and method for designing a cover for use in a lithographic apparatus.
NL2006203A (en) * 2010-03-16 2011-09-19 Asml Netherlands Bv Cover for a substrate table, substrate table for a lithographic apparatus, lithographic apparatus, and device manufacturing method.
EP2381310B1 (en) 2010-04-22 2015-05-06 ASML Netherlands BV Fluid handling structure and lithographic apparatus
JP5313293B2 (ja) 2010-05-19 2013-10-09 エーエスエムエル ネザーランズ ビー.ブイ. リソグラフィ装置、リソグラフィ装置で使用する流体ハンドリング構造およびデバイス製造方法
NL2008183A (en) * 2011-02-25 2012-08-28 Asml Netherlands Bv A lithographic apparatus, a method of controlling the apparatus and a device manufacturing method.
NL2008695A (en) * 2011-05-25 2012-11-27 Asml Netherlands Bv Lithographic apparatus comprising substrate table.
JP5943557B2 (ja) * 2011-06-01 2016-07-05 キヤノン株式会社 位置決め装置、露光装置およびデバイス製造方法
US8823921B2 (en) * 2011-08-19 2014-09-02 Ultratech, Inc. Programmable illuminator for a photolithography system
WO2013072144A1 (en) 2011-11-17 2013-05-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
NL2009692A (en) * 2011-12-07 2013-06-10 Asml Netherlands Bv A lithographic apparatus and a device manufacturing method.
CN103186056B (zh) * 2011-12-31 2016-01-06 中芯国际集成电路制造(上海)有限公司 浸没式光刻系统的投影系统
WO2013135494A2 (en) 2012-03-14 2013-09-19 Asml Netherlands B.V. Lithographic apparatus
US9268231B2 (en) * 2012-04-10 2016-02-23 Nikon Corporation Liquid immersion member, exposure apparatus, exposing method, method for manufacturing device, program, and recording medium
NL2010679A (en) 2012-05-23 2013-11-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
US9494870B2 (en) * 2012-10-12 2016-11-15 Nikon Corporation Exposure apparatus, exposing method, device manufacturing method, program, and recording medium
CN104345576A (zh) * 2013-08-09 2015-02-11 联华电子股份有限公司 形成图案的方法
CN104678712B (zh) * 2013-12-03 2017-05-31 上海微电子装备有限公司 一种浸没式曝光设备
JP6251073B2 (ja) 2014-02-05 2017-12-20 浜松ホトニクス株式会社 分光器、及び分光器の製造方法
CN105739245B (zh) * 2014-12-12 2018-12-14 上海微电子装备(集团)股份有限公司 一种浸没光刻机浸没单元防碰撞装置及方法
CN105988294B (zh) * 2015-01-28 2018-05-04 上海微电子装备(集团)股份有限公司 一种浸没式光刻机浸液流场维持防碰撞系统
CN106227000B (zh) * 2016-07-22 2018-04-13 中国科学院上海光学精密机械研究所 激光诱导瞬态热探针的纳米光刻方法
CN109690406A (zh) * 2016-09-09 2019-04-26 Asml控股股份有限公司 光刻设备和支撑结构背景
US10503085B2 (en) * 2017-11-16 2019-12-10 Taiwan Semiconductor Manufacturing Co., Ltd. Lithography apparatus and method
US11106140B2 (en) * 2019-07-16 2021-08-31 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor apparatus and method of operating the same

Family Cites Families (195)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE221563C (ko)
DE242880C (ko)
DE224448C (ko)
DE206607C (ko)
GB1242527A (en) 1967-10-20 1971-08-11 Kodak Ltd Optical instruments
US3573975A (en) 1968-07-10 1971-04-06 Ibm Photochemical fabrication process
JPS5919912Y2 (ja) 1978-08-21 1984-06-08 清水建設株式会社 複合熱交換器
DE2963537D1 (en) 1979-07-27 1982-10-07 Tabarelli Werner W Optical lithographic method and apparatus for copying a pattern onto a semiconductor wafer
FR2474708B1 (fr) 1980-01-24 1987-02-20 Dme Procede de microphotolithographie a haute resolution de traits
JPS5754317A (en) 1980-09-19 1982-03-31 Hitachi Ltd Method and device for forming pattern
US4346164A (en) 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
US4509852A (en) * 1980-10-06 1985-04-09 Werner Tabarelli Apparatus for the photolithographic manufacture of integrated circuit elements
US4390273A (en) 1981-02-17 1983-06-28 Censor Patent-Und Versuchsanstalt Projection mask as well as a method and apparatus for the embedding thereof and projection printing system
JPS57153433A (en) 1981-03-18 1982-09-22 Hitachi Ltd Manufacturing device for semiconductor
JPS57153433U (ko) 1981-03-20 1982-09-27
JPS58202448A (ja) 1982-05-21 1983-11-25 Hitachi Ltd 露光装置
DD206607A1 (de) 1982-06-16 1984-02-01 Mikroelektronik Zt Forsch Tech Verfahren und vorrichtung zur beseitigung von interferenzeffekten
JPS5919912A (ja) 1982-07-26 1984-02-01 Hitachi Ltd 液浸距離保持装置
DD242880A1 (de) 1983-01-31 1987-02-11 Kuch Karl Heinz Einrichtung zur fotolithografischen strukturuebertragung
DD221563A1 (de) 1983-09-14 1985-04-24 Mikroelektronik Zt Forsch Tech Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur
DD224448A1 (de) 1984-03-01 1985-07-03 Zeiss Jena Veb Carl Einrichtung zur fotolithografischen strukturuebertragung
JPS61113376A (ja) 1984-11-07 1986-05-31 Sony Corp テレビジヨン信号の動き検出装置
JPS6265326A (ja) 1985-09-18 1987-03-24 Hitachi Ltd 露光装置
JPS6265326U (ko) 1985-10-16 1987-04-23
JPS62121417A (ja) 1985-11-22 1987-06-02 Hitachi Ltd 液浸対物レンズ装置
JPS62121417U (ko) 1986-01-24 1987-08-01
JPS63157419A (ja) 1986-12-22 1988-06-30 Toshiba Corp 微細パタ−ン転写装置
JPS63157419U (ko) 1987-03-31 1988-10-14
US5040020A (en) 1988-03-31 1991-08-13 Cornell Research Foundation, Inc. Self-aligned, high resolution resonant dielectric lithography
JPH03209479A (ja) 1989-09-06 1991-09-12 Sanee Giken Kk 露光方法
US5121256A (en) 1991-03-14 1992-06-09 The Board Of Trustees Of The Leland Stanford Junior University Lithography system employing a solid immersion lens
JPH04305917A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH04305915A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH0562877A (ja) 1991-09-02 1993-03-12 Yasuko Shinohara 光によるlsi製造縮小投影露光装置の光学系
JPH06124873A (ja) 1992-10-09 1994-05-06 Canon Inc 液浸式投影露光装置
JP2753930B2 (ja) * 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置
JP2520833B2 (ja) 1992-12-21 1996-07-31 東京エレクトロン株式会社 浸漬式の液処理装置
JP3747958B2 (ja) 1995-04-07 2006-02-22 株式会社ニコン 反射屈折光学系
JP3212199B2 (ja) 1993-10-04 2001-09-25 旭硝子株式会社 平板型陰極線管
JPH07220990A (ja) 1994-01-28 1995-08-18 Hitachi Ltd パターン形成方法及びその露光装置
US5874820A (en) 1995-04-04 1999-02-23 Nikon Corporation Window frame-guided stage mechanism
JPH0845812A (ja) * 1994-07-27 1996-02-16 Nikon Corp 面位置設定装置
JPH08136475A (ja) 1994-11-14 1996-05-31 Kawasaki Steel Corp 板状材の表面観察装置
JPH08171054A (ja) 1994-12-16 1996-07-02 Nikon Corp 反射屈折光学系
JPH08316124A (ja) 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
JPH08316125A (ja) 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
JPH103039A (ja) 1996-06-14 1998-01-06 Nikon Corp 反射屈折光学系
JPH1020195A (ja) 1996-06-28 1998-01-23 Nikon Corp 反射屈折光学系
WO1998009278A1 (en) 1996-08-26 1998-03-05 Digital Papyrus Technologies Method and apparatus for coupling an optical lens to a disk through a coupling medium having a relatively high index of refraction
US5825043A (en) * 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
JP3612920B2 (ja) 1997-02-14 2005-01-26 ソニー株式会社 光学記録媒体の原盤作製用露光装置
JPH10255319A (ja) * 1997-03-12 1998-09-25 Hitachi Maxell Ltd 原盤露光装置及び方法
JP3747566B2 (ja) * 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
JP3817836B2 (ja) * 1997-06-10 2006-09-06 株式会社ニコン 露光装置及びその製造方法並びに露光方法及びデバイス製造方法
US5900354A (en) 1997-07-03 1999-05-04 Batchelder; John Samuel Method for optical inspection and lithography
JPH11176727A (ja) * 1997-12-11 1999-07-02 Nikon Corp 投影露光装置
WO1999031717A1 (fr) 1997-12-12 1999-06-24 Nikon Corporation Procede d'exposition par projection et graveur a projection
US6208407B1 (en) * 1997-12-22 2001-03-27 Asm Lithography B.V. Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement
AU2747999A (en) * 1998-03-26 1999-10-18 Nikon Corporation Projection exposure method and system
JP2000058436A (ja) 1998-08-11 2000-02-25 Nikon Corp 投影露光装置及び露光方法
JP2000076707A (ja) 1998-08-31 2000-03-14 Sony Corp 光学記録媒体作製用原盤記録装置
TW490596B (en) * 1999-03-08 2002-06-11 Asm Lithography Bv Lithographic projection apparatus, method of manufacturing a device using the lithographic projection apparatus, device manufactured according to the method and method of calibrating the lithographic projection apparatus
TWI242111B (en) 1999-04-19 2005-10-21 Asml Netherlands Bv Gas bearings for use in vacuum chambers and their application in lithographic projection apparatus
TW552480B (en) * 1999-04-19 2003-09-11 Asml Netherlands Bv Moveable support in a vacuum chamber and its application in lithographic projection apparatus
JP4504479B2 (ja) 1999-09-21 2010-07-14 オリンパス株式会社 顕微鏡用液浸対物レンズ
US7187503B2 (en) 1999-12-29 2007-03-06 Carl Zeiss Smt Ag Refractive projection objective for immersion lithography
US6995930B2 (en) 1999-12-29 2006-02-07 Carl Zeiss Smt Ag Catadioptric projection objective with geometric beam splitting
JP2001272604A (ja) 2000-03-27 2001-10-05 Olympus Optical Co Ltd 液浸対物レンズおよびそれを用いた光学装置
TW591653B (en) 2000-08-08 2004-06-11 Koninkl Philips Electronics Nv Method of manufacturing an optically scannable information carrier
KR100866818B1 (ko) 2000-12-11 2008-11-04 가부시키가이샤 니콘 투영광학계 및 이 투영광학계를 구비한 노광장치
WO2002091078A1 (en) 2001-05-07 2002-11-14 Massachusetts Institute Of Technology Methods and apparatus employing an index matching medium
US6600547B2 (en) 2001-09-24 2003-07-29 Nikon Corporation Sliding seal
EP1446703A2 (en) 2001-11-07 2004-08-18 Applied Materials, Inc. Optical spot grid array printer
US7092069B2 (en) 2002-03-08 2006-08-15 Carl Zeiss Smt Ag Projection exposure method and projection exposure system
DE10229818A1 (de) 2002-06-28 2004-01-15 Carl Zeiss Smt Ag Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem
DE10210899A1 (de) 2002-03-08 2003-09-18 Zeiss Carl Smt Ag Refraktives Projektionsobjektiv für Immersions-Lithographie
US7099682B2 (en) * 2002-08-01 2006-08-29 Intel Corporation Method for allocating resources in a wireless system
CN100462844C (zh) 2002-08-23 2009-02-18 株式会社尼康 投影光学系统、微影方法、曝光装置及使用此装置的方法
US6988326B2 (en) 2002-09-30 2006-01-24 Lam Research Corporation Phobic barrier meniscus separation and containment
US6954993B1 (en) 2002-09-30 2005-10-18 Lam Research Corporation Concentric proximity processing head
US7093375B2 (en) 2002-09-30 2006-08-22 Lam Research Corporation Apparatus and method for utilizing a meniscus in substrate processing
US7367345B1 (en) 2002-09-30 2008-05-06 Lam Research Corporation Apparatus and method for providing a confined liquid for immersion lithography
US6788477B2 (en) * 2002-10-22 2004-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for method for immersion lithography
SG121822A1 (en) 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
CN100568101C (zh) 2002-11-12 2009-12-09 Asml荷兰有限公司 光刻装置和器件制造方法
CN101349876B (zh) 2002-11-12 2010-12-01 Asml荷兰有限公司 光刻装置和器件制造方法
DE60335595D1 (de) 2002-11-12 2011-02-17 Asml Netherlands Bv Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung
US7110081B2 (en) 2002-11-12 2006-09-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
SG121818A1 (en) 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
SG131766A1 (en) 2002-11-18 2007-05-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
DE10253679A1 (de) 2002-11-18 2004-06-03 Infineon Technologies Ag Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren
EP1420302A1 (en) 2002-11-18 2004-05-19 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
TWI255971B (en) 2002-11-29 2006-06-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
DE10258718A1 (de) 2002-12-09 2004-06-24 Carl Zeiss Smt Ag Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives
DE10257766A1 (de) 2002-12-10 2004-07-15 Carl Zeiss Smt Ag Verfahren zur Einstellung einer gewünschten optischen Eigenschaft eines Projektionsobjektivs sowie mikrolithografische Projektionsbelichtungsanlage
JP4352874B2 (ja) * 2002-12-10 2009-10-28 株式会社ニコン 露光装置及びデバイス製造方法
US6992750B2 (en) 2002-12-10 2006-01-31 Canon Kabushiki Kaisha Exposure apparatus and method
JP4645027B2 (ja) * 2002-12-10 2011-03-09 株式会社ニコン 露光装置及び露光方法、デバイス製造方法
JP4232449B2 (ja) 2002-12-10 2009-03-04 株式会社ニコン 露光方法、露光装置、及びデバイス製造方法
WO2004053954A1 (ja) 2002-12-10 2004-06-24 Nikon Corporation 露光装置及びデバイス製造方法
KR101101737B1 (ko) 2002-12-10 2012-01-05 가부시키가이샤 니콘 노광장치 및 노광방법, 디바이스 제조방법
CN101424883B (zh) 2002-12-10 2013-05-15 株式会社尼康 曝光设备和器件制造法
EP1571694A4 (en) 2002-12-10 2008-10-15 Nikon Corp EXPOSURE APPARATUS AND METHOD FOR MANUFACTURING THE DEVICE
JP4179283B2 (ja) 2002-12-10 2008-11-12 株式会社ニコン 光学素子及びその光学素子を用いた投影露光装置
JP2004301825A (ja) * 2002-12-10 2004-10-28 Nikon Corp 面位置検出装置、露光方法、及びデバイス製造方法
SG152063A1 (en) 2002-12-10 2009-05-29 Nikon Corp Exposure apparatus and method for producing device
AU2003289272A1 (en) 2002-12-10 2004-06-30 Nikon Corporation Surface position detection apparatus, exposure method, and device porducing method
KR20120127755A (ko) 2002-12-10 2012-11-23 가부시키가이샤 니콘 노광장치 및 디바이스 제조방법
WO2004053951A1 (ja) 2002-12-10 2004-06-24 Nikon Corporation 露光方法及び露光装置並びにデバイス製造方法
CN100370533C (zh) * 2002-12-13 2008-02-20 皇家飞利浦电子股份有限公司 用于照射层的方法和用于将辐射导向层的装置
CN1316482C (zh) 2002-12-19 2007-05-16 皇家飞利浦电子股份有限公司 照射层上斑点的方法和装置
US7010958B2 (en) 2002-12-19 2006-03-14 Asml Holding N.V. High-resolution gas gauge proximity sensor
JP4364806B2 (ja) 2002-12-19 2009-11-18 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 層上にスポットを照射する方法及び装置
US6781670B2 (en) 2002-12-30 2004-08-24 Intel Corporation Immersion lithography
TWI247339B (en) 2003-02-21 2006-01-11 Asml Holding Nv Lithographic printing with polarized light
JP4352930B2 (ja) * 2003-02-26 2009-10-28 株式会社ニコン 露光装置、露光方法及びデバイス製造方法
US6943941B2 (en) 2003-02-27 2005-09-13 Asml Netherlands B.V. Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
US7206059B2 (en) 2003-02-27 2007-04-17 Asml Netherlands B.V. Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
FR2852316B1 (fr) 2003-03-11 2006-07-21 Solvay Monomere fluore fonctionnalise et ses copolymeres avec le fluorure de vinyledene
US7029832B2 (en) 2003-03-11 2006-04-18 Samsung Electronics Co., Ltd. Immersion lithography methods using carbon dioxide
US20050164522A1 (en) 2003-03-24 2005-07-28 Kunz Roderick R. Optical fluids, and systems and methods of making and using the same
KR20110104084A (ko) * 2003-04-09 2011-09-21 가부시키가이샤 니콘 액침 리소그래피 유체 제어 시스템
JP4656057B2 (ja) 2003-04-10 2011-03-23 株式会社ニコン 液浸リソグラフィ装置用電気浸透素子
JP4488005B2 (ja) 2003-04-10 2010-06-23 株式会社ニコン 液浸リソグラフィ装置用の液体を捕集するための流出通路
KR101364889B1 (ko) 2003-04-10 2014-02-19 가부시키가이샤 니콘 액침 리소그래피 장치용 진공 배출을 포함하는 환경 시스템
EP1611486B1 (en) * 2003-04-10 2016-03-16 Nikon Corporation Environmental system including a transport region for an immersion lithography apparatus
JP4582089B2 (ja) * 2003-04-11 2010-11-17 株式会社ニコン 液浸リソグラフィ用の液体噴射回収システム
JP4428115B2 (ja) * 2003-04-11 2010-03-10 株式会社ニコン 液浸リソグラフィシステム
KR101861493B1 (ko) 2003-04-11 2018-05-28 가부시키가이샤 니콘 액침 리소그래피 머신에서 웨이퍼 교환동안 투영 렌즈 아래의 갭에서 액침 액체를 유지하는 장치 및 방법
SG10201803122UA (en) 2003-04-11 2018-06-28 Nikon Corp Immersion lithography apparatus and device manufacturing method
WO2004095135A2 (en) * 2003-04-17 2004-11-04 Nikon Corporation Optical arrangement of autofocus elements for use with immersion lithography
JP4025683B2 (ja) * 2003-05-09 2007-12-26 松下電器産業株式会社 パターン形成方法及び露光装置
JP4146755B2 (ja) 2003-05-09 2008-09-10 松下電器産業株式会社 パターン形成方法
TWI295414B (en) * 2003-05-13 2008-04-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
JP4084710B2 (ja) 2003-06-12 2008-04-30 松下電器産業株式会社 パターン形成方法
JP4054285B2 (ja) 2003-06-12 2008-02-27 松下電器産業株式会社 パターン形成方法
KR101686762B1 (ko) 2003-06-19 2016-12-28 가부시키가이샤 니콘 노광 장치 및 디바이스 제조방법
US6867844B2 (en) 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
JP4084712B2 (ja) 2003-06-23 2008-04-30 松下電器産業株式会社 パターン形成方法
JP4029064B2 (ja) 2003-06-23 2008-01-09 松下電器産業株式会社 パターン形成方法
US6809794B1 (en) 2003-06-27 2004-10-26 Asml Holding N.V. Immersion photolithography system and method using inverted wafer-projection optics interface
JP3862678B2 (ja) 2003-06-27 2006-12-27 キヤノン株式会社 露光装置及びデバイス製造方法
JP2007527615A (ja) 2003-07-01 2007-09-27 株式会社ニコン 同位体特定流体の光学素子としての使用方法
US7384149B2 (en) 2003-07-21 2008-06-10 Asml Netherlands B.V. Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system
US7006209B2 (en) 2003-07-25 2006-02-28 Advanced Micro Devices, Inc. Method and apparatus for monitoring and controlling imaging in immersion lithography systems
US7326522B2 (en) 2004-02-11 2008-02-05 Asml Netherlands B.V. Device manufacturing method and a substrate
US7175968B2 (en) 2003-07-28 2007-02-13 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a substrate
EP1503244A1 (en) 2003-07-28 2005-02-02 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method
US7700267B2 (en) 2003-08-11 2010-04-20 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion fluid for immersion lithography, and method of performing immersion lithography
US7061578B2 (en) 2003-08-11 2006-06-13 Advanced Micro Devices, Inc. Method and apparatus for monitoring and controlling imaging in immersion lithography systems
US7579135B2 (en) 2003-08-11 2009-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography apparatus for manufacture of integrated circuits
US7085075B2 (en) 2003-08-12 2006-08-01 Carl Zeiss Smt Ag Projection objectives including a plurality of mirrors with lenses ahead of mirror M3
US6844206B1 (en) 2003-08-21 2005-01-18 Advanced Micro Devices, Llp Refractive index system monitor and control for immersion lithography
US7070915B2 (en) 2003-08-29 2006-07-04 Tokyo Electron Limited Method and system for drying a substrate
US6954256B2 (en) 2003-08-29 2005-10-11 Asml Netherlands B.V. Gradient immersion lithography
US7014966B2 (en) 2003-09-02 2006-03-21 Advanced Micro Devices, Inc. Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems
JP4288426B2 (ja) 2003-09-03 2009-07-01 株式会社ニコン 液浸リソグラフィのための流体の供給装置及び方法
US6961186B2 (en) 2003-09-26 2005-11-01 Takumi Technology Corp. Contact printing using a magnified mask image
EP1519230A1 (en) 2003-09-29 2005-03-30 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US7369217B2 (en) 2003-10-03 2008-05-06 Micronic Laser Systems Ab Method and device for immersion lithography
US7678527B2 (en) 2003-10-16 2010-03-16 Intel Corporation Methods and compositions for providing photoresist with improved properties for contacting liquids
WO2005050324A2 (en) 2003-11-05 2005-06-02 Dsm Ip Assets B.V. A method and apparatus for producing microchips
US7924397B2 (en) 2003-11-06 2011-04-12 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-corrosion layer on objective lens for liquid immersion lithography applications
US8854602B2 (en) 2003-11-24 2014-10-07 Asml Netherlands B.V. Holding device for an optical element in an objective
US7545481B2 (en) 2003-11-24 2009-06-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7125652B2 (en) 2003-12-03 2006-10-24 Advanced Micro Devices, Inc. Immersion lithographic process using a conforming immersion medium
EP1700163A1 (en) 2003-12-15 2006-09-13 Carl Zeiss SMT AG Objective as a microlithography projection objective with at least one liquid lens
EP1697798A2 (en) 2003-12-15 2006-09-06 Carl Zeiss SMT AG Projection objective having a high aperture and a planar end surface
WO2005059645A2 (en) 2003-12-19 2005-06-30 Carl Zeiss Smt Ag Microlithography projection objective with crystal elements
US7460206B2 (en) 2003-12-19 2008-12-02 Carl Zeiss Smt Ag Projection objective for immersion lithography
US20050185269A1 (en) 2003-12-19 2005-08-25 Carl Zeiss Smt Ag Catadioptric projection objective with geometric beam splitting
US7394521B2 (en) 2003-12-23 2008-07-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7589818B2 (en) 2003-12-23 2009-09-15 Asml Netherlands B.V. Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus
US7119884B2 (en) 2003-12-24 2006-10-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20050147920A1 (en) 2003-12-30 2005-07-07 Chia-Hui Lin Method and system for immersion lithography
US7088422B2 (en) 2003-12-31 2006-08-08 International Business Machines Corporation Moving lens for immersion optical lithography
JP4371822B2 (ja) 2004-01-06 2009-11-25 キヤノン株式会社 露光装置
JP4429023B2 (ja) 2004-01-07 2010-03-10 キヤノン株式会社 露光装置及びデバイス製造方法
US20050153424A1 (en) 2004-01-08 2005-07-14 Derek Coon Fluid barrier with transparent areas for immersion lithography
KR101309242B1 (ko) 2004-01-14 2013-09-16 칼 짜이스 에스엠티 게엠베하 반사굴절식 투영 대물렌즈
KR101233879B1 (ko) 2004-01-16 2013-02-15 칼 짜이스 에스엠티 게엠베하 편광변조 광학소자
WO2005069078A1 (en) 2004-01-19 2005-07-28 Carl Zeiss Smt Ag Microlithographic projection exposure apparatus with immersion projection lens
CN1938646B (zh) 2004-01-20 2010-12-15 卡尔蔡司Smt股份公司 曝光装置和用于投影透镜的测量装置
US7026259B2 (en) 2004-01-21 2006-04-11 International Business Machines Corporation Liquid-filled balloons for immersion lithography
US7391501B2 (en) 2004-01-22 2008-06-24 Intel Corporation Immersion liquids with siloxane polymer for immersion lithography
EP1723467A2 (en) 2004-02-03 2006-11-22 Rochester Institute of Technology Method of photolithography using a fluid and a system thereof
WO2005076084A1 (en) 2004-02-09 2005-08-18 Carl Zeiss Smt Ag Projection objective for a microlithographic projection exposure apparatus
US7050146B2 (en) 2004-02-09 2006-05-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1714192A1 (en) 2004-02-13 2006-10-25 Carl Zeiss SMT AG Projection objective for a microlithographic projection exposure apparatus
EP1721201A1 (en) 2004-02-18 2006-11-15 Corning Incorporated Catadioptric imaging system for high numerical aperture imaging with deep ultraviolet light
US20050205108A1 (en) 2004-03-16 2005-09-22 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for immersion lithography lens cleaning
US7027125B2 (en) 2004-03-25 2006-04-11 International Business Machines Corporation System and apparatus for photolithography
US7084960B2 (en) 2004-03-29 2006-08-01 Intel Corporation Lithography using controlled polarization
US7295283B2 (en) 2004-04-02 2007-11-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7486381B2 (en) 2004-05-21 2009-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method

Also Published As

Publication number Publication date
KR100620980B1 (ko) 2006-09-08
JP2012134561A (ja) 2012-07-12
KR20040098563A (ko) 2004-11-20
US9477160B2 (en) 2016-10-25
JP4115964B2 (ja) 2008-07-09
US9798246B2 (en) 2017-10-24
US20110273683A1 (en) 2011-11-10
US7936444B2 (en) 2011-05-03
US7352434B2 (en) 2008-04-01
JP5145369B2 (ja) 2013-02-13
US20110181859A1 (en) 2011-07-28
JP2008160155A (ja) 2008-07-10
JP2004343114A (ja) 2004-12-02
US20180046089A1 (en) 2018-02-15
US20110279795A1 (en) 2011-11-17
US20050007569A1 (en) 2005-01-13
JP5047019B2 (ja) 2012-10-10
US20080218717A1 (en) 2008-09-11
US8724084B2 (en) 2014-05-13
JP5514857B2 (ja) 2014-06-04
US8964164B2 (en) 2015-02-24
JP2010157766A (ja) 2010-07-15
CN1550905A (zh) 2004-12-01
US10466595B2 (en) 2019-11-05
US8724083B2 (en) 2014-05-13
US20150168850A1 (en) 2015-06-18
US20160299440A1 (en) 2016-10-13
TWI295414B (en) 2008-04-01
TW200517787A (en) 2005-06-01
CN1264065C (zh) 2006-07-12

Similar Documents

Publication Publication Date Title
SG116542A1 (en) Lithographic apparatus, device manufacturing method.
SG116539A1 (en) Lithographic apparatus, device manufacturing method, and device manufactured thereby.
TWI319517B (en) Lithographic apparatus, device manufacturing method
HK1244890A1 (zh) 曝光方法和裝置以及製造裝置的方法
SG116555A1 (en) Lithographic apparatus and device manufacturing method.
SG116549A1 (en) Lithographic apparatus and device manufacturing method.
SG115660A1 (en) Lithographic apparatus, device manufacturing method
SG115684A1 (en) Lithographic apparatus, device manufacturing method, and device manufactured thereby
TWI340875B (en) Imprint lithographic apparatus, device manufacturing method and device manufactured thereby
SG116611A1 (en) Lithographic apparatus and device manufacturing method.
TWI346254B (en) Lithographic apparatus, device manufacturing method and device manufactured thereby
SG121762A1 (en) Lithographic apparatus, and device manufacturing method
HK1093119A1 (en) Exposure apparatus, exposure method, and device manufacturing method
SG10201607457PA (en) Exposure apparatus, exposure method and device manufacturing method
TWI315454B (en) Stage apparatus, lithographic apparatus and device manufacturing method
SG113566A1 (en) Lithographic apparatus and device manufacturing method, as well as a device manufacturing thereby
EP1628330A4 (en) EXPOSURE METHOD, EXPOSURE DEVICE, AND DEVICE MANUFACTURING METHOD
HK1164543A1 (en) Substrate holding device, exposure apparatus having the same, device manufacturing method
SG111234A1 (en) Lithographic apparatus and device manufacturing method, and measurement system
SG108323A1 (en) Chuck, lithographic apparatus and device manufacturing method
HK1099962A1 (en) Exposure apparatus, exposure method, and method for manufacturing device
SG115686A1 (en) Lithographic apparatus, device manufacturing method, and device manufactured thereby
SG107660A1 (en) Lithographic apparatus, device manufacturing method, and device manufactured thereby
SG116612A1 (en) Lithographic apparatus, control system and device manufacturing method.
SG123587A1 (en) Lithographic apparatus, device manufacturing method, and device manufactured thereby