SG11202010535YA - Mask blank, phase shift mask, and method of manufacturing semiconductor device - Google Patents
Mask blank, phase shift mask, and method of manufacturing semiconductor deviceInfo
- Publication number
- SG11202010535YA SG11202010535YA SG11202010535YA SG11202010535YA SG11202010535YA SG 11202010535Y A SG11202010535Y A SG 11202010535YA SG 11202010535Y A SG11202010535Y A SG 11202010535YA SG 11202010535Y A SG11202010535Y A SG 11202010535YA SG 11202010535Y A SG11202010535Y A SG 11202010535YA
- Authority
- SG
- Singapore
- Prior art keywords
- mask
- semiconductor device
- phase shift
- manufacturing semiconductor
- mask blank
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
- H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
- H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
- H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018103482A JP7109996B2 (ja) | 2018-05-30 | 2018-05-30 | マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法 |
| PCT/JP2019/018396 WO2019230313A1 (ja) | 2018-05-30 | 2019-05-08 | マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11202010535YA true SG11202010535YA (en) | 2020-11-27 |
Family
ID=68697347
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11202010535YA SG11202010535YA (en) | 2018-05-30 | 2019-05-08 | Mask blank, phase shift mask, and method of manufacturing semiconductor device |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US11442357B2 (https=) |
| JP (1) | JP7109996B2 (https=) |
| KR (1) | KR102660488B1 (https=) |
| CN (1) | CN112189167B (https=) |
| SG (1) | SG11202010535YA (https=) |
| TW (1) | TWI801587B (https=) |
| WO (1) | WO2019230313A1 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102018213056A1 (de) * | 2018-08-03 | 2020-02-06 | Robert Bosch Gmbh | Verfahren und Vorrichtung zum Ermitteln einer Erklärungskarte |
| JP7527992B2 (ja) | 2020-03-17 | 2024-08-05 | Hoya株式会社 | フォトマスクブランク、フォトマスクの製造方法及び表示装置の製造方法 |
| CN113809047B (zh) * | 2020-06-12 | 2024-02-06 | 长鑫存储技术有限公司 | 半导体结构及其制备方法 |
| WO2022004350A1 (ja) * | 2020-06-30 | 2022-01-06 | Hoya株式会社 | マスクブランク、位相シフトマスク、位相シフトマスクの製造方法及び半導体デバイスの製造方法 |
| JP7543116B2 (ja) * | 2020-12-09 | 2024-09-02 | Hoya株式会社 | マスクブランク、位相シフトマスク及び半導体デバイスの製造方法 |
| US12578652B2 (en) * | 2022-09-01 | 2026-03-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photomask and methods for measuring and manufacturing the photomask |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5054766U (https=) | 1973-09-20 | 1975-05-24 | ||
| JPS60133831A (ja) * | 1983-12-21 | 1985-07-17 | Yamatoyo Shokuhin Kk | 漬物の製造法 |
| JP3213345B2 (ja) | 1991-08-27 | 2001-10-02 | 松下電工株式会社 | タイマ付き配線器具 |
| US5629115A (en) | 1993-04-30 | 1997-05-13 | Kabushiki Kaisha Toshiba | Exposure mask and method and apparatus for manufacturing the same |
| JPH07159981A (ja) * | 1993-12-03 | 1995-06-23 | Toshiba Corp | 露光用マスク基板 |
| JP3115185B2 (ja) * | 1993-05-25 | 2000-12-04 | 株式会社東芝 | 露光用マスクとパターン形成方法 |
| US5514499A (en) | 1993-05-25 | 1996-05-07 | Kabushiki Kaisha Toshiba | Phase shifting mask comprising a multilayer structure and method of forming a pattern using the same |
| US5935735A (en) | 1996-10-24 | 1999-08-10 | Toppan Printing Co., Ltd. | Halftone phase shift mask, blank for the same, and methods of manufacturing these |
| JPH10186632A (ja) | 1996-10-24 | 1998-07-14 | Toppan Printing Co Ltd | ハーフトーン型位相シフトマスク用ブランク及びハーフトーン型位相シフトマスク |
| NL2007303A (en) | 2010-09-23 | 2012-03-26 | Asml Netherlands Bv | Process tuning with polarization. |
| JP6005530B2 (ja) | 2013-01-15 | 2016-10-12 | Hoya株式会社 | マスクブランク、位相シフトマスクおよびこれらの製造方法 |
| KR102166222B1 (ko) | 2013-01-15 | 2020-10-15 | 호야 가부시키가이샤 | 마스크 블랭크, 위상 시프트 마스크 및 이들의 제조 방법 |
| JP6185721B2 (ja) * | 2013-01-29 | 2017-08-23 | Hoya株式会社 | マスクブランク、マスクブランクの製造方法、転写用マスクの製造方法、および半導体デバイスの製造方法 |
| CN105190840B (zh) * | 2013-05-03 | 2018-10-12 | 应用材料公司 | 用于多图案化应用的光调谐硬掩模 |
| JP6264238B2 (ja) | 2013-11-06 | 2018-01-24 | 信越化学工業株式会社 | ハーフトーン位相シフト型フォトマスクブランク、ハーフトーン位相シフト型フォトマスク及びパターン露光方法 |
| JP2018063441A (ja) * | 2013-11-06 | 2018-04-19 | 信越化学工業株式会社 | ハーフトーン位相シフト型フォトマスクブランク、ハーフトーン位相シフト型フォトマスク及びパターン露光方法 |
| JP6524614B2 (ja) * | 2014-05-27 | 2019-06-05 | 大日本印刷株式会社 | マスクブランクス、ネガ型レジスト膜付きマスクブランクス、位相シフトマスク、およびそれを用いるパターン形成体の製造方法 |
| JP6430155B2 (ja) * | 2014-06-19 | 2018-11-28 | Hoya株式会社 | マスクブランク、位相シフトマスク、位相シフトマスクの製造方法および半導体デバイスの製造方法 |
| KR102625449B1 (ko) * | 2015-05-15 | 2024-01-16 | 호야 가부시키가이샤 | 마스크 블랭크, 마스크 블랭크의 제조 방법, 전사용 마스크, 전사용 마스크의 제조 방법 및 반도체 디바이스의 제조 방법 |
| JP6058757B1 (ja) * | 2015-07-15 | 2017-01-11 | Hoya株式会社 | マスクブランク、位相シフトマスク、位相シフトマスクの製造方法および半導体デバイスの製造方法 |
| JP6087401B2 (ja) * | 2015-08-14 | 2017-03-01 | Hoya株式会社 | マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法 |
| TWI720752B (zh) * | 2015-09-30 | 2021-03-01 | 日商Ｈｏｙａ股份有限公司 | 空白遮罩、相位移轉遮罩及半導體元件之製造方法 |
| KR102341792B1 (ko) | 2016-08-26 | 2021-12-21 | 호야 가부시키가이샤 | 마스크 블랭크, 위상 시프트 마스크 및 반도체 디바이스의 제조 방법 |
| JP6271780B2 (ja) * | 2017-02-01 | 2018-01-31 | Hoya株式会社 | マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法 |
| JP6321265B2 (ja) * | 2017-05-29 | 2018-05-09 | Hoya株式会社 | マスクブランク、位相シフトマスク、位相シフトマスクの製造方法及び半導体デバイスの製造方法 |
| JP6490786B2 (ja) * | 2017-12-25 | 2019-03-27 | Hoya株式会社 | マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法 |
-
2018
- 2018-05-30 JP JP2018103482A patent/JP7109996B2/ja active Active
-
2019
- 2019-05-08 WO PCT/JP2019/018396 patent/WO2019230313A1/ja not_active Ceased
- 2019-05-08 CN CN201980034001.9A patent/CN112189167B/zh active Active
- 2019-05-08 US US17/058,631 patent/US11442357B2/en active Active
- 2019-05-08 SG SG11202010535YA patent/SG11202010535YA/en unknown
- 2019-05-08 KR KR1020207032557A patent/KR102660488B1/ko active Active
- 2019-05-24 TW TW108118002A patent/TWI801587B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| WO2019230313A1 (ja) | 2019-12-05 |
| US20210208497A1 (en) | 2021-07-08 |
| CN112189167B (zh) | 2024-05-03 |
| JP7109996B2 (ja) | 2022-08-01 |
| US11442357B2 (en) | 2022-09-13 |
| CN112189167A (zh) | 2021-01-05 |
| KR20210015777A (ko) | 2021-02-10 |
| TWI801587B (zh) | 2023-05-11 |
| KR102660488B1 (ko) | 2024-04-24 |
| TW202012164A (zh) | 2020-04-01 |
| JP2019207361A (ja) | 2019-12-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| SG11202007975QA (en) | Mask blank, phase shift mask, and method for manufacturing semiconductor device | |
| SG11202011373SA (en) | Reflective mask blank, reflective mask, method of manufacturing reflective mask, and method of manufacturing semiconductor device | |
| SG11202007994YA (en) | Mask blank, phase shift mask, and method of manufacturing semiconductor device | |
| SG11202007542WA (en) | Mask blank, phase shift mask, and method of manufacturing semiconductor device | |
| SG11202106508PA (en) | Reflective mask blank, reflective mask, and method for manufacturing semiconductor device | |
| SG11202011370VA (en) | Reflective mask blank, reflective mask and manufacturing method thereof, and semiconductor device manufacturing method | |
| SG11201807251SA (en) | Reflective mask blank, reflective mask and method of manufacturing semiconductor device | |
| SG11202010535YA (en) | Mask blank, phase shift mask, and method of manufacturing semiconductor device | |
| SG11202002928WA (en) | Mask blank, phase shift mask, and method of manufacturing semiconductor device | |
| SG11201912030PA (en) | Mask blank, phase shift mask and method for manufacturing semiconductor device | |
| SG10201911774WA (en) | Mask blank, method for manufacturing phase shift mask, and method for manufacturing semiconductor device | |
| SG11201800548TA (en) | Mask blank, phase shift mask, and method for manufacturing semiconductor device | |
| SG11202010537VA (en) | Mask blank, phase shift mask, and method of manufacturing semiconductor device | |
| SG11202107980SA (en) | Reflective mask blank, reflective mask and method of manufacturing the same, and method of manufacturing semiconductor device | |
| SG11202101338UA (en) | Reflective mask blank, reflective mask and method of manufacturing the same, and method of manufacturing semiconductor device | |
| SG11202004856XA (en) | Reflective mask blank, reflective mask and method of manufacturing the same, and method of manufacturing semiconductor device | |
| SG10202000604QA (en) | Mask blank, transfer mask, and method of manufacturing semiconductor device | |
| SG10201911900YA (en) | Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device | |
| SG11202109240PA (en) | Reflective mask blank, reflective mask and method of manufacturing the same, and method of manufacturing semiconductor device | |
| SG10202009397WA (en) | Multilayered-reflective-film-provided substrate, reflective mask blank, reflective mask, method of manufacturing reflective mask, and method of manufacturing semiconductor device | |
| SG11202009172VA (en) | Mask blank, phase shift mask, and method for manufacturing semiconductor device | |
| SG11202102270QA (en) | Mask blank, transfer mask, and method of manufacturing semiconductor device | |
| SG11202109059SA (en) | Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device | |
| SG10201602448YA (en) | Halftone Phase Shift Mask Blank, Halftone Phase Shift Mask, And Pattern Exposure Method | |
| SG11202110115VA (en) | Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device |