TWI801587B - 遮罩基底、相位轉移遮罩以及半導體元件之製造方法 - Google Patents

遮罩基底、相位轉移遮罩以及半導體元件之製造方法 Download PDF

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Publication number
TWI801587B
TWI801587B TW108118002A TW108118002A TWI801587B TW I801587 B TWI801587 B TW I801587B TW 108118002 A TW108118002 A TW 108118002A TW 108118002 A TW108118002 A TW 108118002A TW I801587 B TWI801587 B TW I801587B
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TW
Taiwan
Prior art keywords
layer
film
light
mask
less
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TW108118002A
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English (en)
Chinese (zh)
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TW202012164A (zh
Inventor
前田仁
宍戶博明
橋本雅廣
Original Assignee
日商Ｈｏｙａ股份有限公司
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Publication of TW202012164A publication Critical patent/TW202012164A/zh
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Publication of TWI801587B publication Critical patent/TWI801587B/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Physical Vapour Deposition (AREA)
TW108118002A 2018-05-30 2019-05-24 遮罩基底、相位轉移遮罩以及半導體元件之製造方法 TWI801587B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018103482A JP7109996B2 (ja) 2018-05-30 2018-05-30 マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法
JP2018-103482 2018-05-30

Publications (2)

Publication Number Publication Date
TW202012164A TW202012164A (zh) 2020-04-01
TWI801587B true TWI801587B (zh) 2023-05-11

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Family Applications (1)

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TW108118002A TWI801587B (zh) 2018-05-30 2019-05-24 遮罩基底、相位轉移遮罩以及半導體元件之製造方法

Country Status (7)

Country Link
US (1) US11442357B2 (https=)
JP (1) JP7109996B2 (https=)
KR (1) KR102660488B1 (https=)
CN (1) CN112189167B (https=)
SG (1) SG11202010535YA (https=)
TW (1) TWI801587B (https=)
WO (1) WO2019230313A1 (https=)

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DE102018213056A1 (de) * 2018-08-03 2020-02-06 Robert Bosch Gmbh Verfahren und Vorrichtung zum Ermitteln einer Erklärungskarte
JP7527992B2 (ja) 2020-03-17 2024-08-05 Hoya株式会社 フォトマスクブランク、フォトマスクの製造方法及び表示装置の製造方法
CN113809047B (zh) * 2020-06-12 2024-02-06 长鑫存储技术有限公司 半导体结构及其制备方法
WO2022004350A1 (ja) * 2020-06-30 2022-01-06 Hoya株式会社 マスクブランク、位相シフトマスク、位相シフトマスクの製造方法及び半導体デバイスの製造方法
JP7543116B2 (ja) * 2020-12-09 2024-09-02 Hoya株式会社 マスクブランク、位相シフトマスク及び半導体デバイスの製造方法
US12578652B2 (en) * 2022-09-01 2026-03-17 Taiwan Semiconductor Manufacturing Company, Ltd. Photomask and methods for measuring and manufacturing the photomask

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TW201708940A (zh) * 2015-05-15 2017-03-01 Ｈｏｙａ股份有限公司 光罩基底、轉印用光罩、轉印用光罩之製造方法及半導體裝置之製造方法

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TWI720752B (zh) * 2015-09-30 2021-03-01 日商Ｈｏｙａ股份有限公司 空白遮罩、相位移轉遮罩及半導體元件之製造方法
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TW201708940A (zh) * 2015-05-15 2017-03-01 Ｈｏｙａ股份有限公司 光罩基底、轉印用光罩、轉印用光罩之製造方法及半導體裝置之製造方法

Also Published As

Publication number Publication date
WO2019230313A1 (ja) 2019-12-05
US20210208497A1 (en) 2021-07-08
CN112189167B (zh) 2024-05-03
JP7109996B2 (ja) 2022-08-01
US11442357B2 (en) 2022-09-13
CN112189167A (zh) 2021-01-05
KR20210015777A (ko) 2021-02-10
SG11202010535YA (en) 2020-11-27
KR102660488B1 (ko) 2024-04-24
TW202012164A (zh) 2020-04-01
JP2019207361A (ja) 2019-12-05

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