JP7109996B2 - マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法 - Google Patents

マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法 Download PDF

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JP7109996B2
JP7109996B2 JP2018103482A JP2018103482A JP7109996B2 JP 7109996 B2 JP7109996 B2 JP 7109996B2 JP 2018103482 A JP2018103482 A JP 2018103482A JP 2018103482 A JP2018103482 A JP 2018103482A JP 7109996 B2 JP7109996 B2 JP 7109996B2
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Japan
Prior art keywords
layer
phase shift
film
less
mask
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JP2018103482A
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English (en)
Japanese (ja)
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JP2019207361A5 (https=
JP2019207361A (ja
Inventor
仁 前田
博明 宍戸
雅広 橋本
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Hoya Corp
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Hoya Corp
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Priority to JP2018103482A priority Critical patent/JP7109996B2/ja
Application filed by Hoya Corp filed Critical Hoya Corp
Priority to SG11202010535YA priority patent/SG11202010535YA/en
Priority to CN201980034001.9A priority patent/CN112189167B/zh
Priority to PCT/JP2019/018396 priority patent/WO2019230313A1/ja
Priority to KR1020207032557A priority patent/KR102660488B1/ko
Priority to US17/058,631 priority patent/US11442357B2/en
Priority to TW108118002A priority patent/TWI801587B/zh
Publication of JP2019207361A publication Critical patent/JP2019207361A/ja
Publication of JP2019207361A5 publication Critical patent/JP2019207361A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Physical Vapour Deposition (AREA)
JP2018103482A 2018-05-30 2018-05-30 マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法 Active JP7109996B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2018103482A JP7109996B2 (ja) 2018-05-30 2018-05-30 マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法
CN201980034001.9A CN112189167B (zh) 2018-05-30 2019-05-08 掩模坯料、相移掩模及半导体器件的制造方法
PCT/JP2019/018396 WO2019230313A1 (ja) 2018-05-30 2019-05-08 マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法
KR1020207032557A KR102660488B1 (ko) 2018-05-30 2019-05-08 마스크 블랭크, 위상 시프트 마스크 및 반도체 디바이스의 제조 방법
SG11202010535YA SG11202010535YA (en) 2018-05-30 2019-05-08 Mask blank, phase shift mask, and method of manufacturing semiconductor device
US17/058,631 US11442357B2 (en) 2018-05-30 2019-05-08 Mask blank, phase-shift mask, and method of manufacturing semiconductor device
TW108118002A TWI801587B (zh) 2018-05-30 2019-05-24 遮罩基底、相位轉移遮罩以及半導體元件之製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018103482A JP7109996B2 (ja) 2018-05-30 2018-05-30 マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法

Publications (3)

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JP2019207361A JP2019207361A (ja) 2019-12-05
JP2019207361A5 JP2019207361A5 (https=) 2021-05-27
JP7109996B2 true JP7109996B2 (ja) 2022-08-01

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Country Status (7)

Country Link
US (1) US11442357B2 (https=)
JP (1) JP7109996B2 (https=)
KR (1) KR102660488B1 (https=)
CN (1) CN112189167B (https=)
SG (1) SG11202010535YA (https=)
TW (1) TWI801587B (https=)
WO (1) WO2019230313A1 (https=)

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DE102018213056A1 (de) * 2018-08-03 2020-02-06 Robert Bosch Gmbh Verfahren und Vorrichtung zum Ermitteln einer Erklärungskarte
JP7527992B2 (ja) 2020-03-17 2024-08-05 Hoya株式会社 フォトマスクブランク、フォトマスクの製造方法及び表示装置の製造方法
CN113809047B (zh) * 2020-06-12 2024-02-06 长鑫存储技术有限公司 半导体结构及其制备方法
WO2022004350A1 (ja) * 2020-06-30 2022-01-06 Hoya株式会社 マスクブランク、位相シフトマスク、位相シフトマスクの製造方法及び半導体デバイスの製造方法
JP7543116B2 (ja) * 2020-12-09 2024-09-02 Hoya株式会社 マスクブランク、位相シフトマスク及び半導体デバイスの製造方法
US12578652B2 (en) * 2022-09-01 2026-03-17 Taiwan Semiconductor Manufacturing Company, Ltd. Photomask and methods for measuring and manufacturing the photomask

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JP2018063441A (ja) 2013-11-06 2018-04-19 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランク、ハーフトーン位相シフト型フォトマスク及びパターン露光方法

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JP2018063441A (ja) 2013-11-06 2018-04-19 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランク、ハーフトーン位相シフト型フォトマスク及びパターン露光方法

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Publication number Publication date
WO2019230313A1 (ja) 2019-12-05
US20210208497A1 (en) 2021-07-08
CN112189167B (zh) 2024-05-03
US11442357B2 (en) 2022-09-13
CN112189167A (zh) 2021-01-05
KR20210015777A (ko) 2021-02-10
TWI801587B (zh) 2023-05-11
SG11202010535YA (en) 2020-11-27
KR102660488B1 (ko) 2024-04-24
TW202012164A (zh) 2020-04-01
JP2019207361A (ja) 2019-12-05

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