CN112189167B - 掩模坯料、相移掩模及半导体器件的制造方法 - Google Patents

掩模坯料、相移掩模及半导体器件的制造方法 Download PDF

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Publication number
CN112189167B
CN112189167B CN201980034001.9A CN201980034001A CN112189167B CN 112189167 B CN112189167 B CN 112189167B CN 201980034001 A CN201980034001 A CN 201980034001A CN 112189167 B CN112189167 B CN 112189167B
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China
Prior art keywords
layer
phase shift
light
film
mask
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CN201980034001.9A
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Chinese (zh)
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CN112189167A (zh
Inventor
前田仁
宍户博明
桥本雅广
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Hoya Corp
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Hoya Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Physical Vapour Deposition (AREA)
CN201980034001.9A 2018-05-30 2019-05-08 掩模坯料、相移掩模及半导体器件的制造方法 Active CN112189167B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018103482A JP7109996B2 (ja) 2018-05-30 2018-05-30 マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法
JP2018-103482 2018-05-30
PCT/JP2019/018396 WO2019230313A1 (ja) 2018-05-30 2019-05-08 マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法

Publications (2)

Publication Number Publication Date
CN112189167A CN112189167A (zh) 2021-01-05
CN112189167B true CN112189167B (zh) 2024-05-03

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CN201980034001.9A Active CN112189167B (zh) 2018-05-30 2019-05-08 掩模坯料、相移掩模及半导体器件的制造方法

Country Status (7)

Country Link
US (1) US11442357B2 (https=)
JP (1) JP7109996B2 (https=)
KR (1) KR102660488B1 (https=)
CN (1) CN112189167B (https=)
SG (1) SG11202010535YA (https=)
TW (1) TWI801587B (https=)
WO (1) WO2019230313A1 (https=)

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DE102018213056A1 (de) * 2018-08-03 2020-02-06 Robert Bosch Gmbh Verfahren und Vorrichtung zum Ermitteln einer Erklärungskarte
JP7527992B2 (ja) 2020-03-17 2024-08-05 Hoya株式会社 フォトマスクブランク、フォトマスクの製造方法及び表示装置の製造方法
CN113809047B (zh) * 2020-06-12 2024-02-06 长鑫存储技术有限公司 半导体结构及其制备方法
WO2022004350A1 (ja) * 2020-06-30 2022-01-06 Hoya株式会社 マスクブランク、位相シフトマスク、位相シフトマスクの製造方法及び半導体デバイスの製造方法
JP7543116B2 (ja) * 2020-12-09 2024-09-02 Hoya株式会社 マスクブランク、位相シフトマスク及び半導体デバイスの製造方法
US12578652B2 (en) * 2022-09-01 2026-03-17 Taiwan Semiconductor Manufacturing Company, Ltd. Photomask and methods for measuring and manufacturing the photomask

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WO2019230313A1 (ja) 2019-12-05
US20210208497A1 (en) 2021-07-08
JP7109996B2 (ja) 2022-08-01
US11442357B2 (en) 2022-09-13
CN112189167A (zh) 2021-01-05
KR20210015777A (ko) 2021-02-10
TWI801587B (zh) 2023-05-11
SG11202010535YA (en) 2020-11-27
KR102660488B1 (ko) 2024-04-24
TW202012164A (zh) 2020-04-01
JP2019207361A (ja) 2019-12-05

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