KR102660488B1 - 마스크 블랭크, 위상 시프트 마스크 및 반도체 디바이스의 제조 방법 - Google Patents

마스크 블랭크, 위상 시프트 마스크 및 반도체 디바이스의 제조 방법 Download PDF

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KR102660488B1
KR102660488B1 KR1020207032557A KR20207032557A KR102660488B1 KR 102660488 B1 KR102660488 B1 KR 102660488B1 KR 1020207032557 A KR1020207032557 A KR 1020207032557A KR 20207032557 A KR20207032557 A KR 20207032557A KR 102660488 B1 KR102660488 B1 KR 102660488B1
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South Korea
Prior art keywords
layer
phase shift
film
mask blank
light
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Korean (ko)
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KR20210015777A (ko
Inventor
히토시 마에다
히로아키 시시도
마사히로 하시모토
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호야 가부시키가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Physical Vapour Deposition (AREA)
KR1020207032557A 2018-05-30 2019-05-08 마스크 블랭크, 위상 시프트 마스크 및 반도체 디바이스의 제조 방법 Active KR102660488B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018103482A JP7109996B2 (ja) 2018-05-30 2018-05-30 マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法
JPJP-P-2018-103482 2018-05-30
PCT/JP2019/018396 WO2019230313A1 (ja) 2018-05-30 2019-05-08 マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法

Publications (2)

Publication Number Publication Date
KR20210015777A KR20210015777A (ko) 2021-02-10
KR102660488B1 true KR102660488B1 (ko) 2024-04-24

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KR1020207032557A Active KR102660488B1 (ko) 2018-05-30 2019-05-08 마스크 블랭크, 위상 시프트 마스크 및 반도체 디바이스의 제조 방법

Country Status (7)

Country Link
US (1) US11442357B2 (https=)
JP (1) JP7109996B2 (https=)
KR (1) KR102660488B1 (https=)
CN (1) CN112189167B (https=)
SG (1) SG11202010535YA (https=)
TW (1) TWI801587B (https=)
WO (1) WO2019230313A1 (https=)

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DE102018213056A1 (de) * 2018-08-03 2020-02-06 Robert Bosch Gmbh Verfahren und Vorrichtung zum Ermitteln einer Erklärungskarte
JP7527992B2 (ja) 2020-03-17 2024-08-05 Hoya株式会社 フォトマスクブランク、フォトマスクの製造方法及び表示装置の製造方法
CN113809047B (zh) * 2020-06-12 2024-02-06 长鑫存储技术有限公司 半导体结构及其制备方法
WO2022004350A1 (ja) * 2020-06-30 2022-01-06 Hoya株式会社 マスクブランク、位相シフトマスク、位相シフトマスクの製造方法及び半導体デバイスの製造方法
JP7543116B2 (ja) * 2020-12-09 2024-09-02 Hoya株式会社 マスクブランク、位相シフトマスク及び半導体デバイスの製造方法
US12578652B2 (en) * 2022-09-01 2026-03-17 Taiwan Semiconductor Manufacturing Company, Ltd. Photomask and methods for measuring and manufacturing the photomask

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JP2017021312A (ja) 2015-07-15 2017-01-26 Hoya株式会社 マスクブランク、位相シフトマスク、位相シフトマスクの製造方法および半導体デバイスの製造方法
JP2017037278A (ja) 2015-08-14 2017-02-16 Hoya株式会社 マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法
JP2017076152A (ja) 2017-02-01 2017-04-20 Hoya株式会社 マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法
JP6133530B1 (ja) 2015-09-30 2017-05-24 Hoya株式会社 マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法

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JPH07159981A (ja) * 1993-12-03 1995-06-23 Toshiba Corp 露光用マスク基板
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WO2019230313A1 (ja) 2019-12-05
US20210208497A1 (en) 2021-07-08
CN112189167B (zh) 2024-05-03
JP7109996B2 (ja) 2022-08-01
US11442357B2 (en) 2022-09-13
CN112189167A (zh) 2021-01-05
KR20210015777A (ko) 2021-02-10
TWI801587B (zh) 2023-05-11
SG11202010535YA (en) 2020-11-27
TW202012164A (zh) 2020-04-01
JP2019207361A (ja) 2019-12-05

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