SG11201808546YA - Process and apparatus for processing a nitride structure without silica deposition - Google Patents
Process and apparatus for processing a nitride structure without silica depositionInfo
- Publication number
- SG11201808546YA SG11201808546YA SG11201808546YA SG11201808546YA SG11201808546YA SG 11201808546Y A SG11201808546Y A SG 11201808546YA SG 11201808546Y A SG11201808546Y A SG 11201808546YA SG 11201808546Y A SG11201808546Y A SG 11201808546YA SG 11201808546Y A SG11201808546Y A SG 11201808546YA
- Authority
- SG
- Singapore
- Prior art keywords
- silicon
- texas
- international
- silica
- march
- Prior art date
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title abstract 20
- 239000000377 silicon dioxide Substances 0.000 title abstract 7
- 238000000034 method Methods 0.000 title abstract 4
- 230000008021 deposition Effects 0.000 title abstract 2
- 150000004767 nitrides Chemical group 0.000 title abstract 2
- 238000012545 processing Methods 0.000 title abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 5
- 239000000758 substrate Substances 0.000 abstract 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052710 silicon Inorganic materials 0.000 abstract 4
- 239000010703 silicon Substances 0.000 abstract 4
- 239000008119 colloidal silica Substances 0.000 abstract 3
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 3
- 239000000126 substance Substances 0.000 abstract 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 abstract 2
- 239000003795 chemical substances by application Substances 0.000 abstract 2
- 238000006460 hydrolysis reaction Methods 0.000 abstract 2
- 229960004838 phosphoric acid Drugs 0.000 abstract 2
- 235000011007 phosphoric acid Nutrition 0.000 abstract 2
- 230000002441 reversible effect Effects 0.000 abstract 2
- 241000006351 Leucophyllum frutescens Species 0.000 abstract 1
- 235000006094 Salvia texana Nutrition 0.000 abstract 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 1
- 241001149163 Ulmus americana Species 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000012993 chemical processing Methods 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 230000008520 organization Effects 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Weting (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201662315632P | 2016-03-30 | 2016-03-30 | |
US201662315559P | 2016-03-30 | 2016-03-30 | |
US15/467,973 US10515820B2 (en) | 2016-03-30 | 2017-03-23 | Process and apparatus for processing a nitride structure without silica deposition |
US15/467,939 US10325779B2 (en) | 2016-03-30 | 2017-03-23 | Colloidal silica growth inhibitor and associated method and system |
PCT/US2017/024128 WO2017172533A1 (en) | 2016-03-30 | 2017-03-24 | Process and apparatus for processing a nitride structure without silica deposition |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201808546YA true SG11201808546YA (en) | 2018-10-30 |
Family
ID=59965112
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201808542WA SG11201808542WA (en) | 2016-03-30 | 2017-03-24 | Colloidal silica growth inhibitor and associated method and system |
SG11201808546YA SG11201808546YA (en) | 2016-03-30 | 2017-03-24 | Process and apparatus for processing a nitride structure without silica deposition |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201808542WA SG11201808542WA (en) | 2016-03-30 | 2017-03-24 | Colloidal silica growth inhibitor and associated method and system |
Country Status (7)
Country | Link |
---|---|
US (2) | US10325779B2 (ko) |
JP (3) | JP6715433B2 (ko) |
KR (3) | KR102196944B1 (ko) |
CN (2) | CN108885989B (ko) |
SG (2) | SG11201808542WA (ko) |
TW (3) | TWI720167B (ko) |
WO (2) | WO2017172533A1 (ko) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10325779B2 (en) * | 2016-03-30 | 2019-06-18 | Tokyo Electron Limited | Colloidal silica growth inhibitor and associated method and system |
JP6909620B2 (ja) * | 2017-04-20 | 2021-07-28 | 株式会社Screenホールディングス | 基板処理方法 |
WO2020018924A1 (en) * | 2018-07-20 | 2020-01-23 | Tokyo Electron Limited | Etching of silicon nitride and silica deposition control in 3d nand structures |
CN109216367B (zh) * | 2018-08-27 | 2021-07-02 | 长江存储科技有限责任公司 | 半导体结构的形成方法 |
KR102084044B1 (ko) * | 2018-12-24 | 2020-03-03 | 주식회사 세미부스터 | 인산용액 중의 실리콘 농도 분석방법 |
KR20200086141A (ko) * | 2019-01-08 | 2020-07-16 | 삼성전자주식회사 | 실리콘 질화물용 식각제 조성물 및 반도체 소자의 제조 방법 |
JP2020150126A (ja) * | 2019-03-13 | 2020-09-17 | 東京エレクトロン株式会社 | 混合装置、混合方法および基板処理システム |
KR20210007097A (ko) * | 2019-07-10 | 2021-01-20 | 오씨아이 주식회사 | 실리콘 질화막 식각 용액 및 이를 사용한 반도체 소자의 제조 방법 |
KR102315919B1 (ko) * | 2021-01-26 | 2021-10-22 | 연세대학교 산학협력단 | 비인산계 실리콘 질화막 식각 조성물 및 이를 이용한 식각방법 |
JP2022133947A (ja) * | 2021-03-02 | 2022-09-14 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
TWI818541B (zh) * | 2021-05-12 | 2023-10-11 | 美商恩特葛瑞斯股份有限公司 | 選擇性蝕刻劑組合物及方法 |
KR102449897B1 (ko) * | 2022-01-14 | 2022-09-30 | 삼성전자주식회사 | 습식 식각 방법 및 이를 이용한 반도체 소자 제조 방법. |
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2017
- 2017-03-23 US US15/467,939 patent/US10325779B2/en active Active
- 2017-03-24 WO PCT/US2017/024128 patent/WO2017172533A1/en active Application Filing
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- 2017-03-24 CN CN201780022040.8A patent/CN108885989B/zh active Active
- 2017-03-24 KR KR1020187031140A patent/KR102196944B1/ko active IP Right Grant
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- 2017-03-24 CN CN201780026802.1A patent/CN109072077B/zh active Active
- 2017-03-24 SG SG11201808546YA patent/SG11201808546YA/en unknown
- 2017-03-24 KR KR1020187031146A patent/KR102172305B1/ko active IP Right Grant
- 2017-03-29 TW TW106110416A patent/TWI720167B/zh active
- 2017-03-29 TW TW106110443A patent/TWI655274B/zh active
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-
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Also Published As
Publication number | Publication date |
---|---|
KR20180121795A (ko) | 2018-11-08 |
TWI655274B (zh) | 2019-04-01 |
CN109072077A (zh) | 2018-12-21 |
JP6715433B2 (ja) | 2020-07-01 |
CN109072077B (zh) | 2021-04-27 |
TWI720167B (zh) | 2021-03-01 |
TW202101576A (zh) | 2021-01-01 |
TW201801174A (zh) | 2018-01-01 |
JP2019511842A (ja) | 2019-04-25 |
TWI731790B (zh) | 2021-06-21 |
JP2019510379A (ja) | 2019-04-11 |
KR102353264B1 (ko) | 2022-01-18 |
WO2017172532A1 (en) | 2017-10-05 |
US10325779B2 (en) | 2019-06-18 |
US20190237338A1 (en) | 2019-08-01 |
SG11201808542WA (en) | 2018-10-30 |
TW201800560A (zh) | 2018-01-01 |
JP6942318B2 (ja) | 2021-09-29 |
KR20200108109A (ko) | 2020-09-16 |
CN108885989A (zh) | 2018-11-23 |
KR20180121793A (ko) | 2018-11-08 |
KR102172305B1 (ko) | 2020-10-30 |
US10763120B2 (en) | 2020-09-01 |
CN108885989B (zh) | 2023-06-13 |
JP2021040153A (ja) | 2021-03-11 |
WO2017172533A1 (en) | 2017-10-05 |
US20170287725A1 (en) | 2017-10-05 |
KR102196944B1 (ko) | 2020-12-30 |
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