SG11201807152VA - Hybrid wafer dicing approach using a rotating beam laser scribing process and plasma etch process - Google Patents

Hybrid wafer dicing approach using a rotating beam laser scribing process and plasma etch process

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Publication number
SG11201807152VA
SG11201807152VA SG11201807152VA SG11201807152VA SG11201807152VA SG 11201807152V A SG11201807152V A SG 11201807152VA SG 11201807152V A SG11201807152V A SG 11201807152VA SG 11201807152V A SG11201807152V A SG 11201807152VA SG 11201807152V A SG11201807152V A SG 11201807152VA
Authority
SG
Singapore
Prior art keywords
wafer
california
international
mask
ho1l
Prior art date
Application number
SG11201807152VA
Inventor
Jungrae Park
Wei-Sheng Lei
James S Papanu
Brad Eaton
Ajay Kumar
Original Assignee
Applied Materials Inc
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Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG11201807152VA publication Critical patent/SG11201807152VA/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B23K26/0624—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1ns or less
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • B23K26/355—Texturing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • B23K26/359—Working by laser beam, e.g. welding, cutting or boring for surface treatment by providing a line or line pattern, e.g. a dotted break initiation line
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/42—Printed circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property —, Organization 111111110111101110101011111010111110111011110111111011011101111101111011111 International Bureau .. ..... ..Yel j ..... .... (10) International Publication Number (43) International Publication Date WO 2017/165706 Al 28 September 2017 (28.09.2017) WIP0 I PCT (51) (21) (22) (25) Filing Language: (26) Publication Language: (30) (71) (72) International Patent Classification: (74) Agents: BERNADICOU, Michael A. et al.; Blakely HO1L 21/78 (2006.01) H01L 21/3065 (2006.01) Sokoloff Taylor & Zafman LLP, 1279 Oakmead Parkway, HO1L 21/76 (2006.01) HO1L 21/67 (2006.01) Sunnyvale, California 94085 (US). HO1L 21/268 (2006.01) (81) Designated States (unless otherwise indicated, for every International Application Number: kind of national protection available): AE, AG, AL, AM, PCT/US2017/023903 AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, International Filing Date: DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, 23 March 2017 (23.03.2017) HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, English KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, English NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, Priority Data: RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, 15/081,296 25 March 2016 (25.03.2016) US TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. Applicant: APPLIED MATERIALS, INC. [US/US]; 3050 Bowers Avenue, Santa Clara, California 95054 (US). (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, Inventors: PARK, Jungrae; 1710 Triton Court, Santa GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, Clara, California 95050 (US). LEI, Wei-Sheng; 1786 TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, Duvall Drive, San Jose, California 95130 (US). PAPANU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, James S.; 351 Holly Drive, San Rafael, California 94903 DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, (US). EATON, Brad; 563 8th Avenue, Menlo Park, Cali- LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, fornia 94025 (US). KUMAR, Ajay; 10457 Manzanita SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, Court, Cupertino, California 95014 (US). GW, KM, ML, MR, NE, SN, TD, TG). [Continued on next page] Title: HYBRID WAFER DICING APPROACH USING A ROTATING ETCH PROCESS FLOWCHART 100 (54) = PLASMA BEAM LASER SCRIBING PROCESS AND (57) : Methods of dicing semicon- ductor wafers, each wafer having a plurality of integrated circuits, are described. In an ex- ample, a method of dicing a semiconductor wafer having a plurality of integrated circuits 102 involves forming a mask above the semicon- ductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with a rotating 104 laser beam laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integ- rated circuits. The semiconductor wafer is then plasma etched through the gaps in the 106 patterned mask to singulate the integrated cir- .. i cu l ts. '\ FORM A MASK ABOVE THE SEMICONDUCTOR WAFER ----,,..I I it PATTERN THE M ASK WITH A ROTATING LASER S BEAM LASER SCRIBING PROCESS '\.., , f. CLEAN THE EXPOSED REGIONS OF THE SEMICONDUCTOR cs.. I WAFER WITH A PLASMA PROCESS i • /. 11 .4 IN © ei 0 - N 1 8 6; ___,.../ PLASMA ETCH THE SE MICONDUCTOR WAFER THROUGH GAPS IN THE PATTERNED MASK J O WO 2017/165706 Al MIDEDIM000101011MOIDEDEMIEM100111111101111111111011110111111 Published: — with international search report (Art. 21(3))
SG11201807152VA 2016-03-25 2017-03-23 Hybrid wafer dicing approach using a rotating beam laser scribing process and plasma etch process SG11201807152VA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/081,296 US9852997B2 (en) 2016-03-25 2016-03-25 Hybrid wafer dicing approach using a rotating beam laser scribing process and plasma etch process
PCT/US2017/023903 WO2017165706A1 (en) 2016-03-25 2017-03-23 Hybrid wafer dicing approach using a rotating beam laser scribing process and plasma etch process

Publications (1)

Publication Number Publication Date
SG11201807152VA true SG11201807152VA (en) 2018-10-30

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SG11201807152VA SG11201807152VA (en) 2016-03-25 2017-03-23 Hybrid wafer dicing approach using a rotating beam laser scribing process and plasma etch process

Country Status (7)

Country Link
US (1) US9852997B2 (en)
JP (1) JP7018893B2 (en)
KR (1) KR102377901B1 (en)
CN (1) CN108780778B (en)
SG (1) SG11201807152VA (en)
TW (1) TWI717486B (en)
WO (1) WO2017165706A1 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6738591B2 (en) * 2015-03-13 2020-08-12 古河電気工業株式会社 Semiconductor wafer processing method, semiconductor chip, and surface protection tape
US10363629B2 (en) * 2017-06-01 2019-07-30 Applied Materials, Inc. Mitigation of particle contamination for wafer dicing processes
WO2020036694A1 (en) * 2018-08-16 2020-02-20 Applied Materials, Inc. Photomask laser etch
CN110190010B (en) * 2019-05-17 2024-04-23 福建兆元光电有限公司 Semiconductor wafer dicing apparatus and dicing method
CN110408283A (en) * 2019-07-08 2019-11-05 深圳泰研半导体装备有限公司 A kind of protection solution of plasma cut wafer and its application method in processing wafer
US11011424B2 (en) 2019-08-06 2021-05-18 Applied Materials, Inc. Hybrid wafer dicing approach using a spatially multi-focused laser beam laser scribing process and plasma etch process
US11342226B2 (en) 2019-08-13 2022-05-24 Applied Materials, Inc. Hybrid wafer dicing approach using an actively-focused laser beam laser scribing process and plasma etch process
US10903121B1 (en) * 2019-08-14 2021-01-26 Applied Materials, Inc. Hybrid wafer dicing approach using a uniform rotating beam laser scribing process and plasma etch process
CN112453692B (en) * 2020-12-01 2022-03-29 强一半导体（苏州）有限公司 MEMS probe laser etching method
US11551923B2 (en) * 2021-01-15 2023-01-10 Phoenix Silicon International Corp. Taiko wafer ring cut process method

Family Cites Families (109)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4049944A (en) 1973-02-28 1977-09-20 Hughes Aircraft Company Process for fabricating small geometry semiconductive devices including integrated components
US4339528A (en) 1981-05-19 1982-07-13 Rca Corporation Etching method using a hardened PVA stencil
US4684437A (en) 1985-10-31 1987-08-04 International Business Machines Corporation Selective metal etching in metal/polymer structures
KR100215338B1 (en) 1991-03-06 1999-08-16 가나이 쓰도무 Method of manufacturing semiconductor device
US5691794A (en) 1993-02-01 1997-11-25 Canon Kabushiki Kaisha Liquid crystal display device
US5593606A (en) 1994-07-18 1997-01-14 Electro Scientific Industries, Inc. Ultraviolet laser system and method for forming vias in multi-layered targets
JPH09216085A (en) 1996-02-07 1997-08-19 Canon Inc Method and equipment for cutting substrate
EP1357584A3 (en) 1996-08-01 2005-01-12 Surface Technology Systems Plc Method of surface treatment of semiconductor substrates
US6426484B1 (en) 1996-09-10 2002-07-30 Micron Technology, Inc. Circuit and method for heating an adhesive to package or rework a semiconductor die
US5920973A (en) 1997-03-09 1999-07-13 Electro Scientific Industries, Inc. Hole forming system with multiple spindles per station
JP3230572B2 (en) 1997-05-19 2001-11-19 日亜化学工業株式会社 Method for manufacturing nitride compound semiconductor device and semiconductor light emitting device
US6057180A (en) 1998-06-05 2000-05-02 Electro Scientific Industries, Inc. Method of severing electrically conductive links with ultraviolet laser output
US6211488B1 (en) * 1998-12-01 2001-04-03 Accudyne Display And Semiconductor Systems, Inc. Method and apparatus for separating non-metallic substrates utilizing a laser initiated scribe
JP2001044144A (en) 1999-08-03 2001-02-16 Tokyo Seimitsu Co Ltd Semiconductor chip manufacturing process
US6795274B1 (en) * 1999-09-07 2004-09-21 Asahi Glass Company, Ltd. Method for manufacturing a substantially circular substrate by utilizing scribing
JP2001110811A (en) 1999-10-08 2001-04-20 Oki Electric Ind Co Ltd Manufacturing method of semiconductor device
JP4387007B2 (en) 1999-10-26 2009-12-16 株式会社ディスコ Method for dividing semiconductor wafer
JP2001144126A (en) 1999-11-12 2001-05-25 Matsushita Electric Ind Co Ltd Semiconductor device and manufacturing method
JP2001148358A (en) 1999-11-19 2001-05-29 Disco Abrasive Syst Ltd Semiconductor wafer and deviding method thereof
US6300593B1 (en) 1999-12-07 2001-10-09 First Solar, Llc Apparatus and method for laser scribing a coated substrate
US6887804B2 (en) 2000-01-10 2005-05-03 Electro Scientific Industries, Inc. Passivation processing over a memory link
KR100850262B1 (en) 2000-01-10 2008-08-04 일렉트로 싸이언티픽 인더스트리이즈 인코포레이티드 Laser system and method for processing a memory link with a burst of laser pulses having ultrashort pulse widths
WO2001074529A2 (en) 2000-03-30 2001-10-11 Electro Scientific Industries, Inc. Laser system and method for single pass micromachining of multilayer workpieces
GB2386184B (en) 2000-07-12 2004-05-26 Electro Scient Ind Inc UV laser system and method for single pulse severing of IC fuses
US6676878B2 (en) 2001-01-31 2004-01-13 Electro Scientific Industries, Inc. Laser segmented cutting
US6759275B1 (en) 2001-09-04 2004-07-06 Megic Corporation Method for making high-performance RF integrated circuits
US6642127B2 (en) 2001-10-19 2003-11-04 Applied Materials, Inc. Method for dicing a semiconductor wafer
JP3910843B2 (en) 2001-12-13 2007-04-25 東京エレクトロン株式会社 Semiconductor element separation method and semiconductor element separation apparatus
US6706998B2 (en) 2002-01-11 2004-03-16 Electro Scientific Industries, Inc. Simulated laser spot enlargement
JP4447325B2 (en) 2002-02-25 2010-04-07 株式会社ディスコ Method for dividing semiconductor wafer
KR100451950B1 (en) 2002-02-25 2004-10-08 삼성전자주식회사 Sawing method for image sensor device wafer
JP2003257896A (en) 2002-02-28 2003-09-12 Disco Abrasive Syst Ltd Method for dicing semiconductor wafer
CN1663038A (en) 2002-04-19 2005-08-31 Xsil技术有限公司 Laser processing
JP2004031526A (en) 2002-06-24 2004-01-29 Toyoda Gosei Co Ltd Manufacturing method of group iii nitride compound semiconductor element
US6582983B1 (en) 2002-07-12 2003-06-24 Keteca Singapore Singapore Method and wafer for maintaining ultra clean bonding pads on a wafer
JP4286497B2 (en) 2002-07-17 2009-07-01 新光電気工業株式会社 Manufacturing method of semiconductor device
JP3908148B2 (en) 2002-10-28 2007-04-25 シャープ株式会社 Multilayer semiconductor device
US20040157457A1 (en) 2003-02-12 2004-08-12 Songlin Xu Methods of using polymer films to form micro-structures
JP2004273895A (en) 2003-03-11 2004-09-30 Disco Abrasive Syst Ltd Dividing method of semiconductor wafer
US7087452B2 (en) 2003-04-22 2006-08-08 Intel Corporation Edge arrangements for integrated circuit chips
JP2004322168A (en) 2003-04-25 2004-11-18 Disco Abrasive Syst Ltd Laser machining apparatus
EP1477264A1 (en) 2003-05-16 2004-11-17 Lasag Ag Apparatus for generating a rotating laser beam
JP4231349B2 (en) 2003-07-02 2009-02-25 株式会社ディスコ Laser processing method and laser processing apparatus
JP4408361B2 (en) 2003-09-26 2010-02-03 株式会社ディスコ Wafer division method
US7128806B2 (en) 2003-10-21 2006-10-31 Applied Materials, Inc. Mask etch processing apparatus
JP4471632B2 (en) 2003-11-18 2010-06-02 株式会社ディスコ Wafer processing method
KR20050061006A (en) * 2003-12-17 2005-06-22 삼성에스디아이 주식회사 Method for irradiating stabilized pulse laser and apparatus for the method
JP2005203541A (en) 2004-01-15 2005-07-28 Disco Abrasive Syst Ltd Laser-processing method for wafer
US7459377B2 (en) 2004-06-08 2008-12-02 Panasonic Corporation Method for dividing substrate
US7804043B2 (en) 2004-06-15 2010-09-28 Laserfacturing Inc. Method and apparatus for dicing of thin and ultra thin semiconductor wafer using ultrafast pulse laser
US7687740B2 (en) 2004-06-18 2010-03-30 Electro Scientific Industries, Inc. Semiconductor structure processing using multiple laterally spaced laser beam spots delivering multiple blows
US7507638B2 (en) 2004-06-30 2009-03-24 Freescale Semiconductor, Inc. Ultra-thin die and method of fabricating same
JP4018088B2 (en) 2004-08-02 2007-12-05 松下電器産業株式会社 Semiconductor wafer dividing method and semiconductor element manufacturing method
DE102004040068B4 (en) * 2004-08-18 2018-01-04 Via Mechanics, Ltd. Method for laser drilling a multilayered workpiece
US7199050B2 (en) 2004-08-24 2007-04-03 Micron Technology, Inc. Pass through via technology for use during the manufacture of a semiconductor device
JP4018096B2 (en) 2004-10-05 2007-12-05 松下電器産業株式会社 Semiconductor wafer dividing method and semiconductor element manufacturing method
US20060088984A1 (en) 2004-10-21 2006-04-27 Intel Corporation Laser ablation method
US20060086898A1 (en) 2004-10-26 2006-04-27 Matsushita Electric Industrial Co., Ltd. Method and apparatus of making highly repetitive micro-pattern using laser writer
US20060146910A1 (en) 2004-11-23 2006-07-06 Manoochehr Koochesfahani Method and apparatus for simultaneous velocity and temperature measurements in fluid flow
JP4288229B2 (en) 2004-12-24 2009-07-01 パナソニック株式会社 Manufacturing method of semiconductor chip
US7875898B2 (en) 2005-01-24 2011-01-25 Panasonic Corporation Semiconductor device
JP2006253402A (en) 2005-03-10 2006-09-21 Nec Electronics Corp Manufacturing method of semiconductor device
US7361990B2 (en) 2005-03-17 2008-04-22 Taiwan Semiconductor Manufacturing Company, Ltd. Reducing cracking of high-lead or lead-free bumps by matching sizes of contact pads and bump pads
JP4478053B2 (en) 2005-03-29 2010-06-09 株式会社ディスコ Semiconductor wafer processing method
US8389894B2 (en) * 2005-06-01 2013-03-05 Phoeton Corp. Laser processing apparatus and laser processing method
JP4285455B2 (en) 2005-07-11 2009-06-24 パナソニック株式会社 Manufacturing method of semiconductor chip
JP4599243B2 (en) 2005-07-12 2010-12-15 株式会社ディスコ Laser processing equipment
EP2260967B1 (en) 2005-10-31 2013-10-02 Advanced Laser Separation International (ALSI) B.V. Arrangement for forming one or more separated scores in a surface of a substrate
JP4769560B2 (en) 2005-12-06 2011-09-07 株式会社ディスコ Wafer division method
CN100495215C (en) * 2006-01-12 2009-06-03 苏州大学 Method and device for light etching micrometer structure of smooth surface
JP4372115B2 (en) 2006-05-12 2009-11-25 パナソニック株式会社 Semiconductor device manufacturing method and semiconductor module manufacturing method
JP4480728B2 (en) 2006-06-09 2010-06-16 パナソニック株式会社 Method for manufacturing MEMS microphone
TW200808479A (en) * 2006-08-09 2008-02-16 Uni Via Technology Inc laser beam splitting wafer system
JP4544231B2 (en) 2006-10-06 2010-09-15 パナソニック株式会社 Manufacturing method of semiconductor chip
JP2008112953A (en) 2006-10-06 2008-05-15 Sei Tsunezo Laser beam uniformizing system
GB0700984D0 (en) * 2007-01-18 2007-02-28 Element Six Ltd Polycrystalline diamond elements having convex surfaces
JP4840174B2 (en) 2007-02-08 2011-12-21 パナソニック株式会社 Manufacturing method of semiconductor chip
JP4840200B2 (en) 2007-03-09 2011-12-21 パナソニック株式会社 Manufacturing method of semiconductor chip
US7926410B2 (en) 2007-05-01 2011-04-19 J.R. Automation Technologies, L.L.C. Hydraulic circuit for synchronized horizontal extension of cylinders
KR100953185B1 (en) * 2007-08-08 2010-04-15 티에스씨멤시스(주) Method of trimming a film resistor by a laser with an off-axis spinning beam deliver system
JP5205012B2 (en) 2007-08-29 2013-06-05 株式会社半導体エネルギー研究所 Display device and electronic apparatus including the display device
JP4858395B2 (en) 2007-10-12 2012-01-18 パナソニック株式会社 Plasma processing equipment
US7859084B2 (en) 2008-02-28 2010-12-28 Panasonic Corporation Semiconductor substrate
JP2009260272A (en) 2008-03-25 2009-11-05 Panasonic Corp Method of processing substrate, method of manufacturing semiconductor chip and method of manufacturing semiconductor chip with resin adhesion layer
WO2009126907A2 (en) 2008-04-10 2009-10-15 Applied Materials, Inc. Laser-scribing platform and hybrid writing strategy
US20100013036A1 (en) 2008-07-16 2010-01-21 Carey James E Thin Sacrificial Masking Films for Protecting Semiconductors From Pulsed Laser Process
US8571365B2 (en) * 2008-11-05 2013-10-29 The Regents Of The University Of California Apparatus and method for micromanipulation of microscale objects using laser light delivered through a single optical fiber and axicon lens
DE102008054798A1 (en) 2008-12-17 2010-06-24 Robert Bosch Gmbh Welding arrangement and welding process
US8609512B2 (en) 2009-03-27 2013-12-17 Electro Scientific Industries, Inc. Method for laser singulation of chip scale packages on glass substrates
US8340485B2 (en) * 2009-05-29 2012-12-25 Corning Cable Systems Llc Laser-shaped optical fibers along with optical assemblies and methods therefor
TWI395630B (en) * 2009-06-30 2013-05-11 Mitsuboshi Diamond Ind Co Ltd Apparatus for processing glass substrate by laser beam
JP2011224931A (en) * 2010-04-22 2011-11-10 Disco Corp Optical device wafer processing method and laser processing apparatus
US8642448B2 (en) 2010-06-22 2014-02-04 Applied Materials, Inc. Wafer dicing using femtosecond-based laser and plasma etch
US8802545B2 (en) 2011-03-14 2014-08-12 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
CN102285624B (en) * 2011-06-03 2014-09-17 中国人民解放军国防科学技术大学 Bonded wafer with thermal stress release structure and laser scribing process
US9029242B2 (en) 2011-06-15 2015-05-12 Applied Materials, Inc. Damage isolation by shaped beam delivery in laser scribing process
JP2013008823A (en) * 2011-06-24 2013-01-10 Disco Abrasive Syst Ltd Cutting device
US8951819B2 (en) * 2011-07-11 2015-02-10 Applied Materials, Inc. Wafer dicing using hybrid split-beam laser scribing process with plasma etch
US9931712B2 (en) 2012-01-11 2018-04-03 Pim Snow Leopard Inc. Laser drilling and trepanning device
US8652940B2 (en) 2012-04-10 2014-02-18 Applied Materials, Inc. Wafer dicing used hybrid multi-step laser scribing process with plasma etch
JP2014007351A (en) * 2012-06-27 2014-01-16 Renesas Electronics Corp Semiconductor device manufacturing method
KR20140015895A (en) * 2012-07-26 2014-02-07 (주)하드램 Laser cutting apparatus and method for film attached to glass substrate
CN102773605B (en) * 2012-08-11 2016-02-03 张立国 A kind of rotary light beam module group laser motion tracking control system
KR101388116B1 (en) * 2012-08-27 2014-04-24 주식회사 엘티에스 Apparatus for drilling using laser
JP2014231071A (en) * 2013-05-29 2014-12-11 三星ダイヤモンド工業株式会社 Substrate cutting device by using laser beam
JP2015047638A (en) 2013-09-04 2015-03-16 株式会社最新レーザ技術研究センター Laser processing method using beam branched rotary optical system
US10005152B2 (en) * 2013-11-19 2018-06-26 Rofin-Sinar Technologies Llc Method and apparatus for spiral cutting a glass tube using filamentation by burst ultrafast laser pulses
US20150255349A1 (en) * 2014-03-07 2015-09-10 JAMES Matthew HOLDEN Approaches for cleaning a wafer during hybrid laser scribing and plasma etching wafer dicing processes
JP6385131B2 (en) * 2014-05-13 2018-09-05 株式会社ディスコ Wafer processing method

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