JP2001144126A - Semiconductor device and manufacturing method - Google Patents
Semiconductor device and manufacturing methodInfo
- Publication number
- JP2001144126A JP2001144126A JP32260899A JP32260899A JP2001144126A JP 2001144126 A JP2001144126 A JP 2001144126A JP 32260899 A JP32260899 A JP 32260899A JP 32260899 A JP32260899 A JP 32260899A JP 2001144126 A JP2001144126 A JP 2001144126A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- resin layer
- resin
- semiconductor wafer
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【発明の属する技術分野】本発明は、半導体素子の外部
接続用の電極上に導電部を形成する半導体装置の製造方
法および半導体装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device in which a conductive portion is formed on an external connection electrode of a semiconductor element, and to a semiconductor device.
【従来の技術】電子機器の基板などに実装される半導体
装置は、ウェハ状態で回路パターン形成が行われた半導
体素子の外部接続用電極に、リードフレームのピンや金
属バンプなどを接続し、この接続部分を含む半導体素子
全体を樹脂モールドで封止して半導体装置とするパッケ
ージング工程を経て製造されている。ところで近年この
パッケージング工程をウェハ状態で行う方法が実用化さ
れている。この方法では、半導体素子の表面を樹脂で封
止して保護する樹脂層の形成がウェハ状態で行われる。
これにより、半導体素子の製造工程において回路形成面
が汚染などから保護されるとともに、薄くてダメージを
受けやすい半導体ウェハの取りあつかいが容易になると
いう利点がある。そして樹脂層形成後に半導体ウェハは
個片に分割するための切断工程に送られ、ここで切断ツ
ールによって機械的に切断される。2. Description of the Related Art In a semiconductor device mounted on a substrate of an electronic device, a lead frame pin or a metal bump is connected to an external connection electrode of a semiconductor element on which a circuit pattern is formed in a wafer state. It is manufactured through a packaging process in which the entire semiconductor element including a connection portion is sealed with a resin mold to form a semiconductor device. In recent years, a method of performing this packaging step in a wafer state has been put to practical use. In this method, a resin layer for protecting the surface of the semiconductor element by sealing it with a resin is formed in a wafer state.
Thus, there is an advantage that the circuit formation surface is protected from contamination and the like in the semiconductor device manufacturing process, and that a thin and easily damaged semiconductor wafer can be easily handled. After the resin layer is formed, the semiconductor wafer is sent to a cutting step for dividing the semiconductor wafer into individual pieces, where the semiconductor wafer is mechanically cut by a cutting tool.
【発明が解決しようとする課題】しかしながら、樹脂層
が形成された後に半導体ウェハを切断するに際しては、
以下に述べるような問題点があった。まず、樹脂を機械
的な方法で切断する場合には、樹脂の切断面は粗面にな
りやすいとともに、切断時の外力によって封止樹脂層と
ウェハ表面との接着面の剥離が生じ、品質不良による歩
留まり低下を招く結果となっていた。そしてこのような
品質不良を防止するためには、樹脂切断用とウェハ切断
用の切断ツールをその都度取り変えることによっって切
断条件を変更するなど、煩雑な工程を採用する必要があ
った。そこで本発明は、樹脂封止後の半導体ウェハを効
率よくしかも高品質で切断することができる半導体装置
の製造方法および半導体装置を提供することを目的とす
る。However, when cutting the semiconductor wafer after the resin layer is formed,
There were the following problems. First, when the resin is cut by a mechanical method, the cut surface of the resin is likely to be rough, and the external force at the time of cutting causes separation of the bonding surface between the sealing resin layer and the wafer surface, resulting in poor quality. Results in reduced yield. And in order to prevent such a quality defect, it was necessary to adopt a complicated process such as changing cutting conditions by changing a cutting tool for resin cutting and a cutting tool for wafer cutting each time. . Accordingly, it is an object of the present invention to provide a method of manufacturing a semiconductor device and a semiconductor device capable of efficiently cutting a semiconductor wafer after resin sealing with high quality.
【課題を解決するための手段】請求項１記載の半導体装
置の製造方法は、半導体素子の外部接続用の電極が形成
された電極形成面上を樹脂で封止した半導体装置を製造
する半導体装置の製造方法であって、複数の半導体素子
が形成された半導体ウェハの電極形成面にこの電極形成
面を封止する封止機能を有する樹脂層を形成する樹脂層
形成工程と、この樹脂層形成工程後に前記半導体ウェハ
を半導体素子の境界線に沿って切断する切断工程とを含
み、この切断工程において樹脂層のみを除去した後に半
導体ウェハを湿式エッチング方法により切断する。請求
項２記載の半導体装置は、半導体素子の外部接続用の電
極が形成された電極形成面上を樹脂で封止した半導体装
置であって、複数の半導体素子が形成された半導体ウェ
ハの電極形成面にこの電極形成面を封止する封止機能を
有する樹脂層を形成する樹脂層形成工程と、この樹脂層
形成工程後に前記半導体ウェハを半導体素子の境界線に
沿って切断する切断工程とを含み、前記切断工程におい
て樹脂層のみを除去した後に半導体ウェハを湿式エッチ
ング方法により切断する半導体装置の製造方法によって
製造された。本発明によれば、樹脂層形成工程後の半導
体ウェハを半導体素子の境界線に沿って切断する切断工
程において、樹脂層のみを除去した後に半導体ウェハを
湿式エッチング方法により切断することにより、樹脂封
止後の半導体ウェハを効率よくしかも高品質で切断する
ことができる。According to a first aspect of the present invention, there is provided a semiconductor device manufacturing method for manufacturing a semiconductor device in which an electrode forming surface on which an electrode for external connection of a semiconductor element is formed is sealed with a resin. Forming a resin layer having a sealing function of sealing the electrode forming surface on an electrode forming surface of a semiconductor wafer on which a plurality of semiconductor elements are formed; and forming the resin layer. A cutting step of cutting the semiconductor wafer along the boundary of the semiconductor element after the step, wherein the semiconductor wafer is cut by a wet etching method after removing only the resin layer in the cutting step. 3. The semiconductor device according to claim 2, wherein the electrode formation surface on which the electrodes for external connection of the semiconductor element are formed is sealed with a resin, and the electrode formation of a semiconductor wafer on which a plurality of semiconductor elements are formed. A resin layer forming step of forming a resin layer having a sealing function of sealing the electrode forming surface on the surface, and a cutting step of cutting the semiconductor wafer along the boundary of the semiconductor element after the resin layer forming step. The semiconductor device is manufactured by a method of manufacturing a semiconductor device in which the semiconductor wafer is cut by a wet etching method after removing only the resin layer in the cutting step. According to the present invention, in the cutting step of cutting the semiconductor wafer along the boundary of the semiconductor element after the resin layer forming step, the semiconductor wafer is cut by a wet etching method after removing only the resin layer, so that the resin sealing is performed. The stopped semiconductor wafer can be cut efficiently and with high quality.
【発明の実施の形態】次の本発明の実施の形態を図面を
参照して説明する。図１、図２は本発明の一実施の形態
の半導体装置の製造方法の工程説明図である。なお、図
１、図２は半導体装置の製造方法を工程順に示してい
る。図１（ａ）において、１は複数の半導体素子が形成
された半導体ウェハである。半導体ウェハ１の下面には
樹脂シート２が貼着され、樹脂シート２により半導体ウ
ェハ１は補強され、撓みなどの変形が防止されている。
また、後述するように、樹脂シート２は個片切断後の半
導体素子を保持する役割をも有している。半導体ウェハ
１の上面には、外部接続用の電極３が形成されている。
次に図１（ｂ）に示すように、半導体ウェハ１の上面の
電極形成面には、樹脂層４が形成される。この樹脂層４
は、半導体ウェハ１の表面を保護するのみならず、半導
体ウェハ１から半導体素子が切り出されて個片の半導体
装置として完成した後においてもそのまま封止用の樹脂
として機能する。したがって樹脂層４に用いる樹脂材料
には、半導体素子を保護するための封止機能に優れたも
のが選定される。すなわち、耐湿性、耐マイグレーショ
ン性、外力に対する十分な強度、電気絶縁性等、封止材
として満足できる性能を有するものでなければならな
い。このような樹脂は、既に半導体装置の製造に用いら
れているものでよい。また半導体装置を基板に実装した
後の信頼性を高めるために、ＳｉＯ2 等のフィラーを混
合したものを用いてもよい。樹脂層形成の方法として
は、樹脂膜の貼付や樹脂塗布などが用いられる。樹脂膜
貼付による方法は、エポキシ樹脂やポリイミド樹脂など
の樹脂材料をシート状に加工した樹脂膜の片面に接着剤
をコートしたものを半導体ウェハ１上面に貼付した後
に、加熱により接着剤を熱硬化させて樹脂膜を半導体ウ
ェハ１に密着させるものである。樹脂塗布は、液状樹脂
を半導体ウェハ１の電極形成面に所定厚さで塗布するも
のである。次に図１（ｃ）に示すように、樹脂層４に貫
通孔４ａが形成される。この貫通孔形成にはレーザ加工
が用いられ、電極３に対応した位置にレーザ光を照射す
ることにより、樹脂層４には電極３の表面に到達する貫
通孔４ａが形成される。次いで図２（ａ）に示すよう
に、貫通孔４ａ内にはペースト状の導電材であるクリー
ム半田５が充填される。この後、半導体ウェハ１をリフ
ロー工程に送り加熱することにより、クリーム半田５が
溶融し溶融半田が固化した後には電極３と導通し樹脂層
４の上面に達する導電部５が形成される。次に図２
（ｂ）に示すように、半導体素子の境界線に相当する位
置の樹脂層４が除去される。この樹脂層４の除去は、半
導体ウェハ１の切断に先立って樹脂層４のみを除去する
ものであり、図２（ａ）に示すように、樹脂層４には除
去溝４ｂが形成される。この樹脂層除去は、貫通孔形成
と同様にレーザ加工によって行われ、切断部位にレーザ
光を照射することにより樹脂を除去する。レーザ光の照
射形態としては、次の２通りの方法が用いられる。すな
わち、第１のレーザ照射方法はスポット状のレーザ光を
境界線に沿って線状にスキャンさせることにより、樹脂
層４を線状に除去するものであり、第２のレーザ照射方
法は、レーザ光源としてライン光源を用い、切断部位に
対してレーザ光をライン状に照射することにより行われ
る。ここで示す樹脂層除去では、機械的ツールを直接切
断部位に接触させない非接触加工を用いている。このよ
うな非接触加工により、切断ツールの損耗が生じやすい
樹脂の切断を、切断ツールを用いることなく効率的に行
うことができる。なお、非接触加工の手段としては、レ
ーザ光照射以外にも、プラズマ放電やアーク放電などに
よって樹脂層４に熱エネルギーを集中的に作用させるこ
とにより所定部位の樹脂を除去する方法や、またはウオ
ータジェットなど流体の機械的エネルギーを集中的に作
用させることにより樹脂を除去する方法などを用いるこ
とができる。次いで半導体ウェハ１の切断が行われる。
ここでは、湿式エッチングにより半導体ウェハ１を部分
的に溶解する方法が用いられる。すなわち、図２（ｂ）
に示すように半導体素子の境界線に沿って樹脂層４が除
去された半導体ウェハ１を湿式エッチング装置に送り、
エッチング液に半導体ウェハ１を浸漬する。これによ
り、半導体ウェハ１のうち、図２（ｃ）に示す樹脂層４
の除去溝４ｂに位置する半導体ウェハ１ａはエッチング
液の化学作用により溶解する。これにより、半導体ウェ
ハ１は半導体ウェハ１を構成する各半導体素子１’毎に
個片に分離し、これらの半導体素子１’が樹脂シート２
によって連結保持された状態となる。そして、これらの
半導体素子１’を樹脂シート２から剥離することによ
り、外部接続用電極の電極形成面が樹脂層４によって封
止された半導体装置７が完成する。この半導体ウェハ１
を個片に分離する分離過程において、機械的切断ツール
を使用しないため、切断時の外力による樹脂層４と半導
体ウェハ１との界面の剥離が発生しない。これにより、
従来の機械的切断ツールを用いる方法で発生していた切
断時のダメージを排除して、良好な品質を確保すること
ができる。このようにして形成された半導体装置７は、
上述のように切断時のダメージの発生がないことから樹
脂層４と半導体ウェハとの密封性に優れており、従って
使用状態での信頼性に優れた半導体装置となっている。DESCRIPTION OF THE PREFERRED EMBODIMENTS The following embodiments of the present invention will be described with reference to the drawings. 1 and 2 are process explanatory views of a method for manufacturing a semiconductor device according to an embodiment of the present invention. 1 and 2 show a method of manufacturing a semiconductor device in the order of steps. In FIG. 1A, reference numeral 1 denotes a semiconductor wafer on which a plurality of semiconductor elements are formed. A resin sheet 2 is adhered to the lower surface of the semiconductor wafer 1 and the semiconductor sheet 1 is reinforced by the resin sheet 2 to prevent deformation such as bending.
Further, as described later, the resin sheet 2 also has a role of holding the semiconductor element after the individual cutting. An electrode 3 for external connection is formed on the upper surface of the semiconductor wafer 1.
Next, as shown in FIG. 1B, a resin layer 4 is formed on the electrode forming surface on the upper surface of the semiconductor wafer 1. This resin layer 4
Not only protects the surface of the semiconductor wafer 1 but also functions as a sealing resin even after the semiconductor elements are cut out from the semiconductor wafer 1 and completed as individual semiconductor devices. Therefore, as the resin material used for the resin layer 4, a material having an excellent sealing function for protecting the semiconductor element is selected. That is, the sealing material must have satisfactory properties such as moisture resistance, migration resistance, sufficient strength against external force, and electrical insulation. Such a resin may be one already used for manufacturing a semiconductor device. Further, in order to improve the reliability after the semiconductor device is mounted on the substrate, a material mixed with a filler such as SiO 2 may be used. As a method for forming the resin layer, a resin film is attached or a resin is applied. In the method of attaching a resin film, a resin film obtained by processing a resin material such as an epoxy resin or a polyimide resin into a sheet is coated with an adhesive on one surface, and the adhesive is attached to the upper surface of the semiconductor wafer 1 and then the adhesive is thermally cured by heating. Then, the resin film is brought into close contact with the semiconductor wafer 1. The resin application is to apply a liquid resin to the electrode forming surface of the semiconductor wafer 1 with a predetermined thickness. Next, as shown in FIG. 1C, a through hole 4a is formed in the resin layer 4. Laser processing is used to form the through-hole, and by irradiating a position corresponding to the electrode 3 with laser light, a through-hole 4 a reaching the surface of the electrode 3 is formed in the resin layer 4. Next, as shown in FIG. 2A, cream solder 5 which is a paste-like conductive material is filled in the through-hole 4a. Thereafter, the semiconductor wafer 1 is sent to a reflow step and heated, whereby the cream solder 5 is melted, and after the molten solder is solidified, the conductive portion 5 which is electrically connected to the electrode 3 and reaches the upper surface of the resin layer 4 is formed. Next, FIG.
As shown in (b), the resin layer 4 at a position corresponding to the boundary of the semiconductor element is removed. The removal of the resin layer 4 is to remove only the resin layer 4 before cutting the semiconductor wafer 1, and a removal groove 4 b is formed in the resin layer 4 as shown in FIG. This resin layer removal is performed by laser processing similarly to the formation of the through hole, and the resin is removed by irradiating the cut portion with laser light. As the irradiation mode of the laser beam, the following two methods are used. That is, the first laser irradiation method removes the resin layer 4 linearly by scanning the spot-like laser light linearly along the boundary line. This is performed by using a line light source as a light source and irradiating a laser beam linearly to a cut portion. In the resin layer removal shown here, non-contact processing is used in which a mechanical tool is not directly in contact with a cut portion. By such non-contact processing, cutting of the resin, which is likely to cause wear of the cutting tool, can be efficiently performed without using the cutting tool. As a non-contact processing means, other than the laser beam irradiation, a method of removing the resin at a predetermined portion by intensively applying heat energy to the resin layer 4 by plasma discharge or arc discharge, or water A method of removing the resin by intensively applying the mechanical energy of a fluid such as a jet can be used. Next, the semiconductor wafer 1 is cut.
Here, a method of partially dissolving the semiconductor wafer 1 by wet etching is used. That is, FIG.
The semiconductor wafer 1 from which the resin layer 4 has been removed along the boundary of the semiconductor element is sent to a wet etching apparatus as shown in FIG.
The semiconductor wafer 1 is immersed in an etching solution. As a result, of the semiconductor wafer 1, the resin layer 4 shown in FIG.
The semiconductor wafer 1a located in the removal groove 4b is dissolved by the chemical action of the etching solution. Thereby, the semiconductor wafer 1 is separated into individual pieces for each semiconductor element 1 ′ constituting the semiconductor wafer 1, and these semiconductor elements 1 ′ are
Is brought into a state of being connected and held. Then, by peeling these semiconductor elements 1 ′ from the resin sheet 2, the semiconductor device 7 in which the electrode forming surfaces of the external connection electrodes are sealed by the resin layer 4 is completed. This semiconductor wafer 1
Since a mechanical cutting tool is not used in the separation process of separating the wafer into individual pieces, separation at the interface between the resin layer 4 and the semiconductor wafer 1 due to external force at the time of cutting does not occur. This allows
Good quality can be ensured by eliminating damage at the time of cutting, which has been caused by a method using a conventional mechanical cutting tool. The semiconductor device 7 thus formed is
As described above, since there is no damage at the time of cutting, the semiconductor device has an excellent sealing property between the resin layer 4 and the semiconductor wafer, and thus has a high reliability in use.
【発明の効果】本発明によれば、樹脂層形成工程後の半
導体ウェハを半導体素子の境界線に沿って切断する切断
工程において、樹脂層のみを除去した後に半導体ウェハ
を湿式エッチング方法により切断するようにしたので、
樹脂封止後の半導体ウェハを効率よくしかも高品質で切
断することができる。According to the present invention, in the cutting step of cutting the semiconductor wafer along the boundary of the semiconductor element after the resin layer forming step, the semiconductor wafer is cut by a wet etching method after removing only the resin layer. So,
The semiconductor wafer after resin sealing can be cut efficiently and with high quality.
【図１】本発明の一実施の形態の半導体装置の製造方法
の工程説明図FIG. 1 is a process explanatory view of a method for manufacturing a semiconductor device according to an embodiment of the present invention;
【図２】本発明の一実施の形態の半導体装置の製造方法
の工程説明図FIG. 2 is a process explanatory view of a method for manufacturing a semiconductor device according to an embodiment of the present invention;
１ 半導体ウェハ １’ 半導体素子 ３ 電極 ４ 樹脂層 ４ａ 貫通孔 ４ｂ 除去溝 ５ クリーム半田 DESCRIPTION OF SYMBOLS 1 Semiconductor wafer 1 'Semiconductor element 3 Electrode 4 Resin layer 4a Through hole 4b Removal groove 5 Cream solder
Claims (2)
た電極形成面上を樹脂で封止した半導体装置を製造する
半導体装置の製造方法であって、複数の半導体素子が形
成された半導体ウェハの電極形成面にこの電極形成面を
封止する封止機能を有する樹脂層を形成する樹脂層形成
工程と、この樹脂層形成工程後に前記半導体ウェハを半
導体素子の境界線に沿って切断する切断工程とを含み、
この切断工程において樹脂層のみを除去した後に半導体
ウェハを湿式エッチング方法により切断することを特徴
とする半導体装置の製造方法。1. A method of manufacturing a semiconductor device in which an electrode forming surface on which an electrode for external connection of a semiconductor element is formed is sealed with a resin, wherein the semiconductor device includes a plurality of semiconductor elements. A resin layer forming step of forming a resin layer having a sealing function for sealing the electrode forming surface on the electrode forming surface of the wafer, and after the resin layer forming step, the semiconductor wafer is cut along a boundary of the semiconductor element. Cutting step,
A method of manufacturing a semiconductor device, comprising cutting a semiconductor wafer by a wet etching method after removing only a resin layer in the cutting step.
た電極形成面上を樹脂で封止した半導体装置であって、
複数の半導体素子が形成された半導体ウェハの電極形成
面にこの電極形成面を封止する封止機能を有する樹脂層
を形成する樹脂層形成工程と、この樹脂層形成工程後に
前記半導体ウェハを半導体素子の境界線に沿って切断す
る切断工程とを含み、前記切断工程において樹脂層のみ
を除去した後に半導体ウェハを湿式エッチング方法によ
り切断する半導体装置の製造方法によって製造されたこ
とを特徴とする半導体装置。2. A semiconductor device in which an electrode forming surface on which an electrode for external connection of a semiconductor element is formed is sealed with resin.
A resin layer forming step of forming a resin layer having a sealing function for sealing the electrode forming surface on an electrode forming surface of the semiconductor wafer on which a plurality of semiconductor elements are formed; A semiconductor device manufactured by a method of manufacturing a semiconductor device in which a semiconductor wafer is cut by a wet etching method after removing only a resin layer in the cutting step. apparatus.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32260899A JP2001144126A (en) | 1999-11-12 | 1999-11-12 | Semiconductor device and manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32260899A JP2001144126A (en) | 1999-11-12 | 1999-11-12 | Semiconductor device and manufacturing method |
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| JP2001144126A true JP2001144126A (en) | 2001-05-25 |
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| JP32260899A Pending JP2001144126A (en) | 1999-11-12 | 1999-11-12 | Semiconductor device and manufacturing method |
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