SG11201804271QA - Manufacturing method of smoothing a semiconductor surface - Google Patents
Manufacturing method of smoothing a semiconductor surfaceInfo
- Publication number
- SG11201804271QA SG11201804271QA SG11201804271QA SG11201804271QA SG11201804271QA SG 11201804271Q A SG11201804271Q A SG 11201804271QA SG 11201804271Q A SG11201804271Q A SG 11201804271QA SG 11201804271Q A SG11201804271Q A SG 11201804271QA SG 11201804271Q A SG11201804271Q A SG 11201804271QA
- Authority
- SG
- Singapore
- Prior art keywords
- international
- semiconductor
- peters
- pct
- smoothing
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 6
- 238000009499 grossing Methods 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 238000000034 method Methods 0.000 abstract 3
- 239000003795 chemical substances by application Substances 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- 238000005259 measurement Methods 0.000 abstract 1
- 230000008520 organization Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02581—Transition metal or rare earth elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
- H01L21/3247—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering for altering the shape, e.g. smoothing the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
- Element Separation (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562257764P | 2015-11-20 | 2015-11-20 | |
PCT/US2016/062050 WO2017087393A1 (en) | 2015-11-20 | 2016-11-15 | Manufacturing method of smoothing a semiconductor surface |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201804271QA true SG11201804271QA (en) | 2018-06-28 |
Family
ID=57485896
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201804271QA SG11201804271QA (en) | 2015-11-20 | 2016-11-15 | Manufacturing method of smoothing a semiconductor surface |
SG10201913407TA SG10201913407TA (en) | 2015-11-20 | 2016-11-15 | Manufacturing method of smoothing a semiconductor surface |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201913407TA SG10201913407TA (en) | 2015-11-20 | 2016-11-15 | Manufacturing method of smoothing a semiconductor surface |
Country Status (7)
Country | Link |
---|---|
US (4) | US10529616B2 (zh) |
EP (1) | EP3378094B1 (zh) |
JP (1) | JP6749394B2 (zh) |
CN (2) | CN117198983A (zh) |
SG (2) | SG11201804271QA (zh) |
TW (2) | TWI626690B (zh) |
WO (1) | WO2017087393A1 (zh) |
Families Citing this family (10)
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CN110838463A (zh) * | 2018-08-17 | 2020-02-25 | 胡兵 | 一种半导体衬底、将衬底层与其上功能层分离的方法 |
DE102016112139B3 (de) * | 2016-07-01 | 2018-01-04 | Infineon Technologies Ag | Verfahren zum Reduzieren einer Verunreinigungskonzentration in einem Halbleiterkörper |
US20180019169A1 (en) * | 2016-07-12 | 2018-01-18 | QMAT, Inc. | Backing substrate stabilizing donor substrate for implant or reclamation |
US10014311B2 (en) | 2016-10-17 | 2018-07-03 | Micron Technology, Inc. | Methods of forming an array of elevationally-extending strings of memory cells, methods of forming polysilicon, elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor, and electronic components comprising polysilicon |
JP7034186B2 (ja) * | 2017-07-14 | 2022-03-11 | サンエディソン・セミコンダクター・リミテッド | 絶縁体上半導体構造の製造方法 |
US10916416B2 (en) * | 2017-11-14 | 2021-02-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor wafer with modified surface and fabrication method thereof |
JP7160943B2 (ja) * | 2018-04-27 | 2022-10-25 | グローバルウェーハズ カンパニー リミテッド | 半導体ドナー基板からの層移転を容易にする光アシスト板状体形成 |
US11414782B2 (en) | 2019-01-13 | 2022-08-16 | Bing Hu | Method of separating a film from a main body of a crystalline object |
US20220216048A1 (en) * | 2021-01-06 | 2022-07-07 | Applied Materials, Inc. | Doped silicon nitride for 3d nand |
CN113483722B (zh) * | 2021-08-24 | 2024-01-26 | 西安奕斯伟材料科技股份有限公司 | 硅片边缘粗糙度检测治具及检测方法 |
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2016
- 2016-11-15 CN CN202311166725.3A patent/CN117198983A/zh active Pending
- 2016-11-15 SG SG11201804271QA patent/SG11201804271QA/en unknown
- 2016-11-15 US US15/775,924 patent/US10529616B2/en active Active
- 2016-11-15 JP JP2018526557A patent/JP6749394B2/ja active Active
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- 2016-11-15 EP EP16806353.5A patent/EP3378094B1/en active Active
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US10818539B2 (en) | 2020-10-27 |
US10755966B2 (en) | 2020-08-25 |
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EP3378094B1 (en) | 2021-09-15 |
CN117198983A (zh) | 2023-12-08 |
TW201828364A (zh) | 2018-08-01 |
TW201730961A (zh) | 2017-09-01 |
EP3378094A1 (en) | 2018-09-26 |
CN108780776B (zh) | 2023-09-29 |
US10985049B2 (en) | 2021-04-20 |
TWI693640B (zh) | 2020-05-11 |
JP6749394B2 (ja) | 2020-09-02 |
US20190333804A1 (en) | 2019-10-31 |
SG10201913407TA (en) | 2020-03-30 |
US20180330983A1 (en) | 2018-11-15 |
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