SG11201803933PA - Optical metrology of lithographic processes using asymmetric sub-resolution features to enhance measurement - Google Patents

Optical metrology of lithographic processes using asymmetric sub-resolution features to enhance measurement

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Publication number
SG11201803933PA
SG11201803933PA SG11201803933PA SG11201803933PA SG11201803933PA SG 11201803933P A SG11201803933P A SG 11201803933PA SG 11201803933P A SG11201803933P A SG 11201803933PA SG 11201803933P A SG11201803933P A SG 11201803933PA SG 11201803933P A SG11201803933P A SG 11201803933PA
Authority
SG
Singapore
Prior art keywords
international
pct
scattered radiation
radiation information
optical metrology
Prior art date
Application number
SG11201803933PA
Inventor
Robert Socha
Thomas Wallow
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of SG11201803933PA publication Critical patent/SG11201803933PA/en

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Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/20—Design optimisation, verification or simulation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G01N21/4785—Standardising light scatter apparatus; Standards therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F17/00—Digital computing or data processing equipment or methods, specially adapted for specific functions
    • G06F17/10—Complex mathematical operations
    • G06F17/18—Complex mathematical operations for evaluating statistical data, e.g. average values, frequency distributions, probability functions, regression analysis
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N20/00—Machine learning
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N7/00—Computing arrangements based on specific mathematical models
    • G06N7/01—Probabilistic graphical models, e.g. probabilistic networks
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/12—Circuits of general importance; Signal processing
    • G01N2201/127—Calibration; base line adjustment; drift compensation
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2111/00—Details relating to CAD techniques
    • G06F2111/10—Numerical modelling

Abstract

INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau „ (10) International Publication Number (43) International Publication Date ^ WO 2017/102299 A1 22 June 2017 (22.06.2017) WIPO I PCT (51) International Patent Classification: G03F 7/20 (2006.01) (21) International Application Number: PCT/EP2016/079063 (22) International Filing Date: 29 November 2016 (29.11.2016) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 62/268,976 17 December 2015 (17.12.2015) US (71) Applicant: ASML NETHERLANDS B.V. [NL/NL]; P.O. Box 324, 5500 AH Veldhoven (NL). (72) Inventors: SOCHA, Robert, John; 4211 Burton Drive, Santa Clara, CA 95054 (US). WALLOW, Thomas, I.; 4211 Burton Drive, Santa Clara, CA 95054 (US). (74) Agent: BROEKEN, Petrus; ASML Netherlands B.V., Corporate Intellectual Property, P.O. Box 324, 5500 AH Veldhoven (NL). (81) Designated States (unless otherwise indicated, for every kind of national protection available)'. AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available)'. ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3)) (54) Title: OPTICAL METROLOGY OF LITHOGRAPHIC PROCESSES USING ASYMMETRIC SUB-RESOLUTION FEA­ TURES TO ENHANCE MEASUREMENT —o o\ o\ CJ CJ o (57) : Provided is a process of calibrating a model, the process including: obtaining training data including: scattered radiation information from a plurality of structures, individual portions of the scattered radiation information being associated with respective process conditions being character­ istics of a patterning process of the individual structures; and calibrating, using one or more pro­ cessors, a model with the training data by determ­ ining a first ratio relating a change in one of the process characteristics to a corresponding change in scattered radiation information.
SG11201803933PA 2015-12-17 2016-11-29 Optical metrology of lithographic processes using asymmetric sub-resolution features to enhance measurement SG11201803933PA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201562268976P 2015-12-17 2015-12-17
PCT/EP2016/079063 WO2017102299A1 (en) 2015-12-17 2016-11-29 Optical metrology of lithographic processes using asymmetric sub-resolution features to enhance measurement

Publications (1)

Publication Number Publication Date
SG11201803933PA true SG11201803933PA (en) 2018-06-28

Family

ID=57442676

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201803933PA SG11201803933PA (en) 2015-12-17 2016-11-29 Optical metrology of lithographic processes using asymmetric sub-resolution features to enhance measurement

Country Status (10)

Country Link
US (1) US10417359B2 (en)
EP (1) EP3391150B1 (en)
JP (1) JP6738423B2 (en)
KR (1) KR102146434B1 (en)
CN (1) CN108369387B (en)
IL (1) IL259268B (en)
NL (1) NL2017882A (en)
SG (1) SG11201803933PA (en)
TW (1) TWI621845B (en)
WO (1) WO2017102299A1 (en)

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CN107949807B (en) * 2015-05-15 2022-06-03 科磊股份有限公司 System and method for focus determination using focus sensitive overlay targets
US20190302010A1 (en) * 2016-05-19 2019-10-03 The Regents Of The University Of Colorado, A Body Corporate Complex Spatially-Resolved Reflectometry/Refractometry
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WO2019035854A1 (en) * 2017-08-16 2019-02-21 Kla-Tencor Corporation Machine learning in metrology measurements
US10732515B2 (en) * 2017-09-27 2020-08-04 Kla-Tencor Corporation Detection and measurement of dimensions of asymmetric structures
US10692203B2 (en) * 2018-02-19 2020-06-23 International Business Machines Corporation Measuring defectivity by equipping model-less scatterometry with cognitive machine learning
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Also Published As

Publication number Publication date
US20170177760A1 (en) 2017-06-22
KR20180095600A (en) 2018-08-27
NL2017882A (en) 2017-06-26
TWI621845B (en) 2018-04-21
WO2017102299A1 (en) 2017-06-22
CN108369387B (en) 2020-11-03
IL259268B (en) 2021-09-30
TW201732264A (en) 2017-09-16
EP3391150A1 (en) 2018-10-24
IL259268A (en) 2018-07-31
JP2019502950A (en) 2019-01-31
CN108369387A (en) 2018-08-03
EP3391150B1 (en) 2023-05-10
US10417359B2 (en) 2019-09-17
KR102146434B1 (en) 2020-08-21
JP6738423B2 (en) 2020-08-12

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