SG11201906177WA - Transparent film error correction pattern in wafer geometry system - Google Patents
Transparent film error correction pattern in wafer geometry systemInfo
- Publication number
- SG11201906177WA SG11201906177WA SG11201906177WA SG11201906177WA SG11201906177WA SG 11201906177W A SG11201906177W A SG 11201906177WA SG 11201906177W A SG11201906177W A SG 11201906177WA SG 11201906177W A SG11201906177W A SG 11201906177WA SG 11201906177W A SG11201906177W A SG 11201906177WA
- Authority
- SG
- Singapore
- Prior art keywords
- international
- wafer
- transparent film
- wafer geometry
- geometry
- Prior art date
Links
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
- G01B21/02—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness
- G01B21/04—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness by measuring coordinates of points
- G01B21/045—Correction of measurements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
- G01B11/0675—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating using interferometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
- G01B11/2441—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures using interferometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/8422—Investigating thin films, e.g. matrix isolation method
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
- G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
Abstract
Title: TRANSPARENT FILM ERROR CORRECTION PATTERN IN WAFER GEOMETRY SYSTEM (57) : A system includes one or more wafer geometry measurement tools con- figured to obtain geometry measurements from a wafer. The system also includes one or more processors in communication with the one or more wafer geometry measurement tools. The one or more processors are configured to apply a correction model to correct the geometry measurements obtained by the one or more wafer geometry measurement 0.3 Jjtools. The correction model is configured to correct measurement errors caused by a transparent film positioned on the wafer. 0.1 0.05 W O 20 18/129385 Al D.25 0.2 0.15 FIG.9B 4900 5000 5100 5200 5300 True Thickness (nm) n 902— N D.35 (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 12 July 2018 (12.07.2018) WIP0 1 PCT 0111111010 0111 °nolo VIII H Imo oimIE (10) International Publication Number WO 2018/129385 Al (51) International Patent Classification: HO1L 21/66 (2006.01) (21) International Application Number: PCT/US2018/012673 (22) International Filing Date: 05 January 2018 (05.01.2018) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 62/443,815 09 January 2017 (09.01.2017) US 15/649,259 13 July 2017 (13.07.2017) US (71) Applicant: KLA-TENCOR CORPORATION [US/US]; Legal Dept., One Technology Drive, Milpitas, California 95035 (US). (72) Inventors: LIU, Helen; 48617 Tonopah Court, Fremont, CA 94539 (US). ZENG, Andrew; 134 Leal Way, Fremont, California 94539 (US). (74) Agent: MCANDREWS, Kevin et al.; Kla-Tencor Corpo- ration, Legal Dept., One Technology Drive, Milpitas, Cali- fornia 95035 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). [Continued on next page] WO 2018/129385 Al D ill Published: with international search report (Art. 21(3)) before the expiration of the time limit for amending the claims and to be republished in the event of receipt of amendments (Rule 48.2(h))
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201762443815P | 2017-01-09 | 2017-01-09 | |
US15/649,259 US10571248B2 (en) | 2017-01-09 | 2017-07-13 | Transparent film error correction pattern in wafer geometry system |
PCT/US2018/012673 WO2018129385A1 (en) | 2017-01-09 | 2018-01-05 | Transparent film error correction pattern in wafer geometry system |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201906177WA true SG11201906177WA (en) | 2019-08-27 |
Family
ID=62782771
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201906177WA SG11201906177WA (en) | 2017-01-09 | 2018-01-05 | Transparent film error correction pattern in wafer geometry system |
Country Status (8)
Country | Link |
---|---|
US (1) | US10571248B2 (en) |
EP (1) | EP3549159A4 (en) |
JP (1) | JP6917462B2 (en) |
KR (1) | KR102301560B1 (en) |
CN (1) | CN110419098B (en) |
SG (1) | SG11201906177WA (en) |
TW (1) | TWI752146B (en) |
WO (1) | WO2018129385A1 (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10317198B2 (en) * | 2016-09-30 | 2019-06-11 | Kla-Tencor Corporation | Three-dimensional mapping of a wafer |
US11067902B2 (en) * | 2017-08-07 | 2021-07-20 | Asml Netherlands B.V. | Computational metrology |
US10859371B2 (en) | 2017-11-28 | 2020-12-08 | Koh Young Technology Inc. | Apparatus for inspecting substrate and method thereof |
US10852125B2 (en) * | 2017-11-28 | 2020-12-01 | Koh Young Technology Inc. | Apparatus for inspecting film on substrate by using optical interference and method thereof |
US11112234B2 (en) * | 2018-03-07 | 2021-09-07 | Applejack 199 L.P. | Multi-probe gauge for slab characterization |
JP6402273B1 (en) * | 2018-05-18 | 2018-10-10 | 大塚電子株式会社 | Optical measuring apparatus and optical measuring method |
US11049720B2 (en) | 2018-10-19 | 2021-06-29 | Kla Corporation | Removable opaque coating for accurate optical topography measurements on top surfaces of transparent films |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
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US5042949A (en) | 1989-03-17 | 1991-08-27 | Greenberg Jeffrey S | Optical profiler for films and substrates |
US5129724A (en) * | 1991-01-29 | 1992-07-14 | Wyko Corporation | Apparatus and method for simultaneous measurement of film thickness and surface height variation for film-substrate sample |
US7324214B2 (en) * | 2003-03-06 | 2008-01-29 | Zygo Corporation | Interferometer and method for measuring characteristics of optically unresolved surface features |
US6847458B2 (en) | 2003-03-20 | 2005-01-25 | Phase Shift Technology, Inc. | Method and apparatus for measuring the shape and thickness variation of polished opaque plates |
JP4192038B2 (en) | 2003-06-04 | 2008-12-03 | 東レエンジニアリング株式会社 | Surface shape and / or film thickness measuring method and apparatus |
US7292346B2 (en) * | 2003-09-15 | 2007-11-06 | Zygo Corporation | Triangulation methods and systems for profiling surfaces through a thin film coating |
US8319975B2 (en) * | 2004-03-11 | 2012-11-27 | Nano-Or Technologies (Israel) Ltd. | Methods and apparatus for wavefront manipulations and improved 3-D measurements |
US7595891B2 (en) * | 2005-07-09 | 2009-09-29 | Kla-Tencor Corporation | Measurement of the top surface of an object with/without transparent thin films in white light interferometry |
GB0712605D0 (en) * | 2007-06-28 | 2007-08-08 | Microsharp Corp Ltd | Optical film |
RU2010122049A (en) * | 2007-11-02 | 2011-12-10 | Эй-Джи-Си Флет Гласс Норт Эмерике, Инк (Us) | TRANSPARENT CONDUCTIVE OXIDE COATING FOR THIN-FILMED PHOTOELECTRIC ELEMENTS AND METHOD FOR PRODUCING THEM |
US8068234B2 (en) | 2009-02-18 | 2011-11-29 | Kla-Tencor Corporation | Method and apparatus for measuring shape or thickness information of a substrate |
US8395191B2 (en) * | 2009-10-12 | 2013-03-12 | Monolithic 3D Inc. | Semiconductor device and structure |
CN102483582B (en) | 2009-08-24 | 2016-01-20 | Asml荷兰有限公司 | Method for measurement and equipment, lithographic equipment, lithographic processing cell and comprise the substrate measuring target |
US8603839B2 (en) | 2010-07-23 | 2013-12-10 | First Solar, Inc. | In-line metrology system |
US20120089365A1 (en) * | 2010-10-08 | 2012-04-12 | Zygo Corporation | Data interpolation methods for metrology of surfaces, films and underresolved structures |
US8818754B2 (en) * | 2011-04-22 | 2014-08-26 | Nanometrics Incorporated | Thin films and surface topography measurement using reduced library |
US8552369B2 (en) * | 2011-05-03 | 2013-10-08 | International Business Machines Corporation | Obtaining elemental concentration profile of sample |
US9385058B1 (en) * | 2012-12-29 | 2016-07-05 | Monolithic 3D Inc. | Semiconductor device and structure |
US20140293291A1 (en) | 2013-04-01 | 2014-10-02 | Kla-Tencor Corporation | Wafer Shape and Thickness Measurement System Utilizing Shearing Interferometers |
US9189705B2 (en) * | 2013-08-08 | 2015-11-17 | JSMSW Technology LLC | Phase-controlled model-based overlay measurement systems and methods |
JP5871242B2 (en) | 2013-10-30 | 2016-03-01 | レーザーテック株式会社 | Film thickness measuring apparatus and film thickness measuring method |
JP6635110B2 (en) * | 2015-03-24 | 2020-01-22 | コニカミノルタ株式会社 | Polyimide-based optical film, method for producing the same, and organic electroluminescent display |
JP6321579B2 (en) | 2015-06-01 | 2018-05-09 | 株式会社日立国際電気 | Semiconductor device manufacturing method, substrate processing system, substrate processing apparatus, and program |
EP3150959B1 (en) | 2015-10-02 | 2018-12-26 | Soitec | Method for measuring thickness variations in a layer of a multilayer semiconductor structure |
-
2017
- 2017-07-13 US US15/649,259 patent/US10571248B2/en active Active
-
2018
- 2018-01-05 JP JP2019537105A patent/JP6917462B2/en active Active
- 2018-01-05 EP EP18735858.5A patent/EP3549159A4/en active Pending
- 2018-01-05 SG SG11201906177WA patent/SG11201906177WA/en unknown
- 2018-01-05 WO PCT/US2018/012673 patent/WO2018129385A1/en unknown
- 2018-01-05 CN CN201880011565.6A patent/CN110419098B/en active Active
- 2018-01-05 KR KR1020197022676A patent/KR102301560B1/en active IP Right Grant
- 2018-01-08 TW TW107100588A patent/TWI752146B/en active
Also Published As
Publication number | Publication date |
---|---|
US20180195855A1 (en) | 2018-07-12 |
TW201839876A (en) | 2018-11-01 |
TWI752146B (en) | 2022-01-11 |
EP3549159A4 (en) | 2020-09-09 |
CN110419098B (en) | 2021-02-02 |
JP2020503526A (en) | 2020-01-30 |
CN110419098A (en) | 2019-11-05 |
US10571248B2 (en) | 2020-02-25 |
WO2018129385A1 (en) | 2018-07-12 |
KR102301560B1 (en) | 2021-09-10 |
JP6917462B2 (en) | 2021-08-11 |
KR20190097281A (en) | 2019-08-20 |
EP3549159A1 (en) | 2019-10-09 |
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