SG11201906278WA - Overlay control with non-zero offset prediction - Google Patents

Overlay control with non-zero offset prediction

Info

Publication number
SG11201906278WA
SG11201906278WA SG11201906278WA SG11201906278WA SG11201906278WA SG 11201906278W A SG11201906278W A SG 11201906278WA SG 11201906278W A SG11201906278W A SG 11201906278WA SG 11201906278W A SG11201906278W A SG 11201906278WA SG 11201906278W A SG11201906278W A SG 11201906278WA
Authority
SG
Singapore
Prior art keywords
international
data
adi
zero offset
california
Prior art date
Application number
SG11201906278WA
Inventor
Michael A Adel
Amnon Manassen
William Pierson
Ady Levy
Pradeep Subrahmanyan
Liran Yerushalmi
Dongsub Choi
Hoyoung Heo
Dror Alumot
John Robinson
Original Assignee
Kla Tencor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kla Tencor Corp filed Critical Kla Tencor Corp
Publication of SG11201906278WA publication Critical patent/SG11201906278WA/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70616Monitoring the printed patterns
    • G03F7/70633Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70616Monitoring the printed patterns
    • G03F7/70625Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/706835Metrology information management or control
    • G03F7/706837Data analysis, e.g. filtering, weighting, flyer removal, fingerprints or root cause analysis
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Data Mining & Analysis (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Financial Or Insurance-Related Operations Such As Payment And Settlement (AREA)
  • Length Measuring Devices By Optical Means (AREA)

Abstract

CONTROLLER :ios I 1110 I I PROCESSORS I MEMORY 126 122 124 (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 02 August 2018 (02.08.2018) WIP0 I PCT ill mu °million °nolo olomollm loll mum oimiE (10) International Publication Number WO 2018/140534 Al (51) International Patent Classification: GO3F 7/20 (2006.01) H01L 21/027 (2006.01) (21) International Application Number: PCT/US2018/015104 (22) International Filing Date: 24 January 2018 (24.01.2018) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 62/450,454 25 January 2017 (25.01.2017) US 15/867,485 10 January 2018 (10.01.2018) US (71) Applicant: KLA-TENCOR CORPORATION [US/US]; Legal Department, One Technology Drive, Milpitas, Cali- fornia 95035 (US). (72) Inventors: ADEL, Michael A.; 14 Yigal Alon Street, 30900 Ya'akov Zichron (IL). MANASSEN, Amnon; 10 Golda Meir, 34892 Haifa (IL). PIERSON, William; 5212 Keene Cove, Austin, Texas 78730 (US). LEVY, Ady; 1323 Glen Eyrie Avenue, San Jose, California 95125 (US). SUBRAHMANYAN, Pradeep; 22117 Wallace Dri- ve, Cupertino, California 95014 (US). YERUSHALMI, Liran; 43 Inbar, 30900 Zicron Yaacob (IL). CHOI, Dongsub; Hyundae Hometown 102-501, Seocheon-dong, Kiheung-Ku, Kyunggi Province, Yongin City 446-960 (KR). HEO, Hoyoung; 464-816,11-9, Namhansanseong- ro, 792 Beon-gil, Gwangju-si, Gyeonggi-do 31250 (KR). ALUMOT, Dror; 1 Einstein St., 7647001 Rehovot (IL). ROBINSON, John; 4000 North Hills Drive, Austin, Texas 78731 (US). (74) Agent: MCANDREWS, Kevin et al.; Kla-Tencor Corpo- ration, Legal Department, One Technology Drive, Milpitas, California 95035 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, = (54) Title: OVERLAY CONTROL WITH NON-ZERO OFFSET PREDICTION 102 112 114 148 118 116 O 00 O C 120 4111111111111111 FIG.1 B (57) : A process control system may include a controller configured to receive after-development inspection (ADI) data after a lithography step for the current layer from an ADI tool, receive after etch inspection (AEI) overlay data after an exposure step of the current layer from an AEI tool, train a non-zero offset predictor with ADI data and AEI overlay data to predict a non-zero offset from input ADI data, generate values of the control parameters of the lithography tool using ADI data and non-zero offsets generated by the non-zero offset predictor, and provide the values of the control parameters to the lithography tool for fabricating the current layer on the at least one production sample. [Continued on next page] WO 2018/140534 Al MIDEDIMODOMMERIOMMHOIREHOMMEMOIMIE CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3))
SG11201906278WA 2017-01-25 2018-01-24 Overlay control with non-zero offset prediction SG11201906278WA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201762450454P 2017-01-25 2017-01-25
US15/867,485 US10409171B2 (en) 2017-01-25 2018-01-10 Overlay control with non-zero offset prediction
PCT/US2018/015104 WO2018140534A1 (en) 2017-01-25 2018-01-24 Overlay control with non-zero offset prediction

Publications (1)

Publication Number Publication Date
SG11201906278WA true SG11201906278WA (en) 2019-08-27

Family

ID=62978709

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201906278WA SG11201906278WA (en) 2017-01-25 2018-01-24 Overlay control with non-zero offset prediction

Country Status (8)

Country Link
US (1) US10409171B2 (en)
EP (1) EP3548971B1 (en)
JP (1) JP6864752B2 (en)
KR (1) KR102274473B1 (en)
CN (1) CN110312967B (en)
SG (1) SG11201906278WA (en)
TW (1) TWI729261B (en)
WO (1) WO2018140534A1 (en)

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CN113924638A (en) * 2019-03-28 2022-01-11 科磊股份有限公司 Method for measuring and correcting offset between layers in semiconductor device and offset target used therein
JP7482910B2 (en) * 2019-07-03 2024-05-14 エーエスエムエル ネザーランズ ビー.ブイ. Method for applying deposition models in semiconductor manufacturing processes - Patents.com
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US11809088B2 (en) * 2019-08-22 2023-11-07 Asml Netherlands B.V. Method for controlling a lithographic apparatus
US10809633B1 (en) 2019-09-05 2020-10-20 Globalfoundries Inc. Overlay control with corrections for lens aberrations
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EP4030236A1 (en) * 2021-01-18 2022-07-20 ASML Netherlands B.V. A method of monitoring a lithographic process and associated apparatuses
US20240004309A1 (en) * 2020-12-21 2024-01-04 Asml Netherlands B.V. A method of monitoring a lithographic process
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Also Published As

Publication number Publication date
CN110312967A (en) 2019-10-08
EP3548971B1 (en) 2021-12-22
WO2018140534A1 (en) 2018-08-02
CN110312967B (en) 2021-10-08
EP3548971A4 (en) 2020-08-12
US10409171B2 (en) 2019-09-10
JP6864752B2 (en) 2021-04-28
EP3548971A1 (en) 2019-10-09
KR102274473B1 (en) 2021-07-07
TW201841071A (en) 2018-11-16
KR20190103448A (en) 2019-09-04
TWI729261B (en) 2021-06-01
US20180253017A1 (en) 2018-09-06
JP2020505647A (en) 2020-02-20

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