SG11201906425RA - System and method for measuring substrate and film thickness distribution - Google Patents

System and method for measuring substrate and film thickness distribution

Info

Publication number
SG11201906425RA
SG11201906425RA SG11201906425RA SG11201906425RA SG11201906425RA SG 11201906425R A SG11201906425R A SG 11201906425RA SG 11201906425R A SG11201906425R A SG 11201906425RA SG 11201906425R A SG11201906425R A SG 11201906425RA SG 11201906425R A SG11201906425R A SG 11201906425RA
Authority
SG
Singapore
Prior art keywords
substrate
international
mass sensor
mass
thickness distribution
Prior art date
Application number
SG11201906425RA
Inventor
Dengpeng Chen
Andrew Zeng
Original Assignee
Kla Tencor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kla Tencor Corp filed Critical Kla Tencor Corp
Publication of SG11201906425RA publication Critical patent/SG11201906425RA/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/30—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/30—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
    • G01B11/306—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces for measuring evenness
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
    • G01B21/02—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness
    • G01B21/08—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness for measuring thickness
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00—Measuring instruments characterised by the use of optical techniques
    • G01B9/02—Interferometers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00—Measuring instruments characterised by the use of optical techniques
    • G01B9/02—Interferometers
    • G01B9/02001—Interferometers characterised by controlling or generating intrinsic radiation properties
    • G01B9/02007—Two or more frequencies or sources used for interferometric measurement
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00—Measuring instruments characterised by the use of optical techniques
    • G01B9/02—Interferometers
    • G01B9/02015—Interferometers characterised by the beam path configuration
    • G01B9/02017—Interferometers characterised by the beam path configuration with multiple interactions between the target object and light beams, e.g. beam reflections occurring from different locations
    • G01B9/02021—Interferometers characterised by the beam path configuration with multiple interactions between the target object and light beams, e.g. beam reflections occurring from different locations contacting different faces of object, e.g. opposite faces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2290/00—Aspects of interferometers not specifically covered by any group under G01B9/02
    • G01B2290/70—Using polarization in the interferometer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like

Abstract

CONTROLLER 1108 ;PROCESSOR 110 MEMORY 1 PROCESS 1 TOOL 1112 USER INTERFACE (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 16 August 2018 (16.08.2018) WIP0 1 PCT omit Ill °nolo VIII oimIE (10) International Publication Number WO 2018/148303 Al (51) International Patent Classification: G01B 11/30 (2006.01) G01B 9/02 (2006.01) G01B 11/06 (2006.01) (21) International Application Number: PCT/US2018/017255 (22) International Filing Date: 07 February 2018 (07.02.2018) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 62/456,651 08 February 2017 (08.02.2017) US 15/622,629 14 June 2017 (14.06.2017) US (71) Applicant: KLA-TENCOR CORPORATION [US/US]; Legal Department, One Technology Drive, Milpitas, CA 95035 (US). (72) Inventors: CHEN, Dengpeng; BLK 101, Clementi St. 14, #11-143, Singapore 120101 (SG). ZENG, Andrew; 134 Leal Way, Fremont, CA 94539 (US). (74) Agent: MCANDREWS, Kevin et al.; Kla-Tencor Corpo- ration, Legal Department, One Technology Drive, Milpitas, CA 95035 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (54) Title: SYSTEM AND METHOD FOR MEASURING SUBSTRATE AND FILM THICKNESS DISTRIBUTION 100 102 - DUAL INTERFEROMETER SUB-SYSTEM 101Th 104 MASS SENSOR 1-1 O co 00 O C FIG.1 (57) : The system includes a dual interferometer sub-system configured to measure flatness across a substrate. The system includes a mass sensor configured to measure the mass of the substrate. The system includes a controller communicatively coupled to the dual interferometer sub-system and the mass sensor. The controller includes one or more processors. The one or more processor are configured to execute a set of program instructions stored in memory, the set of program instructions configured to cause the one or more processors to determine a thickness distribution of at least one of the substrate or a film deposited on the substrate as a function of position across the substrate based on one or more flatness measurements from the dual interferometer sub-system and one or more mass measurements from the mass sensor. [Continued on next page] WO 2018/148303 Al MIDEDIMOMOIDEIREEMOMMIUMNIMOIMEMOIS (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3))
SG11201906425RA 2017-02-08 2018-02-07 System and method for measuring substrate and film thickness distribution SG11201906425RA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201762456651P 2017-02-08 2017-02-08
US15/622,629 US10236222B2 (en) 2017-02-08 2017-06-14 System and method for measuring substrate and film thickness distribution
PCT/US2018/017255 WO2018148303A1 (en) 2017-02-08 2018-02-07 System and method for measuring substrate and film thickness distribution

Publications (1)

Publication Number Publication Date
SG11201906425RA true SG11201906425RA (en) 2019-08-27

Family

ID=63037971

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201906425RA SG11201906425RA (en) 2017-02-08 2018-02-07 System and method for measuring substrate and film thickness distribution

Country Status (7)

Country Link
US (1) US10236222B2 (en)
EP (1) EP3551964A4 (en)
JP (1) JP7114630B2 (en)
KR (1) KR102518197B1 (en)
CN (2) CN113847892A (en)
SG (1) SG11201906425RA (en)
WO (1) WO2018148303A1 (en)

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KR20230136489A (en) * 2022-03-18 2023-09-26 덕우전자주식회사 An apparatus for measuring vent cap thickness of secondary battery

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Also Published As

Publication number Publication date
CN110312911B (en) 2021-10-15
US10236222B2 (en) 2019-03-19
JP2020506558A (en) 2020-02-27
CN113847892A (en) 2021-12-28
WO2018148303A1 (en) 2018-08-16
US20180226304A1 (en) 2018-08-09
EP3551964A4 (en) 2020-05-27
KR20190107171A (en) 2019-09-18
KR102518197B1 (en) 2023-04-04
CN110312911A (en) 2019-10-08
EP3551964A1 (en) 2019-10-16
JP7114630B2 (en) 2022-08-08

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