SG11201806533SA - Instrumented substrate apparatus for acquiring measurement parameters in high temperature process applications - Google Patents

Instrumented substrate apparatus for acquiring measurement parameters in high temperature process applications

Info

Publication number
SG11201806533SA
SG11201806533SA SG11201806533SA SG11201806533SA SG11201806533SA SG 11201806533S A SG11201806533S A SG 11201806533SA SG 11201806533S A SG11201806533S A SG 11201806533SA SG 11201806533S A SG11201806533S A SG 11201806533SA SG 11201806533S A SG11201806533S A SG 11201806533SA
Authority
SG
Singapore
Prior art keywords
international
enclosure
measurement parameters
california
pct
Prior art date
Application number
SG11201806533SA
Inventor
Mei Sun
Vaibhaw Vishal
Original Assignee
Kla Tencor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kla Tencor Corp filed Critical Kla Tencor Corp
Publication of SG11201806533SA publication Critical patent/SG11201806533SA/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K1/00—Details of thermometers not specially adapted for particular types of thermometer
    • G01K1/02—Means for indicating or recording specially adapted for thermometers
    • G01K1/026—Means for indicating or recording specially adapted for thermometers arrangements for monitoring a plurality of temperatures, e.g. by multiplexing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K1/00—Details of thermometers not specially adapted for particular types of thermometer
    • G01K1/20—Compensating for effects of temperature changes other than those to be measured, e.g. changes in ambient temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K13/00—Thermometers specially adapted for specific purposes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/02—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using thermoelectric elements, e.g. thermocouples
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
    • G01L9/025—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning with temperature compensating means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T7/00—Details of radiation-measuring instruments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Molecular Biology (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Automation & Control Theory (AREA)
  • Arrangements For Transmission Of Measured Signals (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)

Abstract

INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (10) International Publication Number (43) International Publication Date WO 2017/136282 Al 10 August 2017 (10.08.2017) WIPO I PCT 111111111111110111011111111111010111110 01110111111110111010111111111110111111 (51) International Patent Classification: HO1L 21/66 (2006.01) HO1L 21/67 (2006.01) (21) International Application Number: PCT/US2017/015648 (22) International Filing Date: 30 January 2017 (30.01.2017) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 62/290,153 2 February 2016 (02.02.2016) US 15/277,753 27 September 2016 (27.09.2016) US (71) Applicant: KLA-TENCOR CORPORATION [US/US]; Legal Department, One Technology Drive, Milpitas, Cali- fornia 95035 (US). (72) Inventors: SUN, Mei; 1059 Eastwood Drive, Los Altos, California 94024 (US). VISHAL, Vaibhaw; 66 Shaniko Common, Fremont, California 94539 (US). (74) Agents: MCANDREWS, Kevin et al.; KLA-TENCOR CORPORATION, Legal Department, One Technology Drive, Milpitas, California 95035 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3)) (54) Title: INSTRUMENTED SUBSTRATE APPARATUS FOR ACQUIRING MEASUREMENT PARAMETERS IN HIGH TEMPERATURE PROCESS APPLICATIONS W O 20 17 / 136 28 2 Al 134 134 136 6 FIG.1 E (57) : An apparatus includes a substrate, a nested enclosure assembly including an outer enclosure and an inner enclosure, wherein the outer enclosure en- closes the inner enclosure and the inner enclosure en- closes at least the electronic assembly. An insulating medium is disposed within a cavity between the outer surface of the inner enclosure and the inner surface of the outer enclosure and the system includes a sensor assembly communicatively coupled to the electronic assembly. The sensor assembly includes one or more sensors that are configured to acquire one or more measurement parameters at one or more locations of the substrate. The electronic assembly is configured to receive the one or more measurement parameters from the one or more sensors.
SG11201806533SA 2016-02-02 2017-01-30 Instrumented substrate apparatus for acquiring measurement parameters in high temperature process applications SG11201806533SA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662290153P 2016-02-02 2016-02-02
US15/277,753 US11150140B2 (en) 2016-02-02 2016-09-27 Instrumented substrate apparatus for acquiring measurement parameters in high temperature process applications
PCT/US2017/015648 WO2017136282A1 (en) 2016-02-02 2017-01-30 Instrumented substrate apparatus for acquiring measurement parameters in high temperature process applications

Publications (1)

Publication Number Publication Date
SG11201806533SA true SG11201806533SA (en) 2018-08-30

Family

ID=59387482

Family Applications (3)

Application Number Title Priority Date Filing Date
SG11201806533SA SG11201806533SA (en) 2016-02-02 2017-01-30 Instrumented substrate apparatus for acquiring measurement parameters in high temperature process applications
SG10202007387PA SG10202007387PA (en) 2016-02-02 2017-01-30 Instrumented substrate apparatus for acquiring measurement parameters in high temperature process applications
SG10201913252WA SG10201913252WA (en) 2016-02-02 2017-01-31 Instrumented substrate apparatus for acquiring measurement parameters in high temperature process applications

Family Applications After (2)

Application Number Title Priority Date Filing Date
SG10202007387PA SG10202007387PA (en) 2016-02-02 2017-01-30 Instrumented substrate apparatus for acquiring measurement parameters in high temperature process applications
SG10201913252WA SG10201913252WA (en) 2016-02-02 2017-01-31 Instrumented substrate apparatus for acquiring measurement parameters in high temperature process applications

Country Status (7)

Country Link
US (1) US11150140B2 (en)
JP (1) JP6944460B2 (en)
KR (1) KR20180101616A (en)
CN (1) CN108604559B (en)
SG (3) SG11201806533SA (en)
TW (1) TWI731929B (en)
WO (1) WO2017136282A1 (en)

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US10460966B2 (en) 2016-06-15 2019-10-29 Kla-Tencor Corporation Encapsulated instrumented substrate apparatus for acquiring measurement parameters in high temperature process applications
US10900843B2 (en) * 2018-06-05 2021-01-26 Kla Corporation In-situ temperature sensing substrate, system, and method
US11315811B2 (en) 2018-09-06 2022-04-26 Kla Corporation Process temperature measurement device fabrication techniques and methods of calibration and data interpolation of the same
US11668601B2 (en) 2020-02-24 2023-06-06 Kla Corporation Instrumented substrate apparatus
US20220223441A1 (en) * 2021-01-08 2022-07-14 Kla Corporation Process condition sensing apparatus
US11688614B2 (en) * 2021-04-28 2023-06-27 Kla Corporation Mitigating thermal expansion mismatch in temperature probe construction apparatus and method

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AU2001281291A1 (en) * 2000-06-29 2002-01-14 Semiconductor Diagnostics, Inc. Method for fast and accurate determination of the minority carrier diffusion length from simultaneously measured surface photovoltages
JP2002071469A (en) * 2000-09-04 2002-03-08 Nikon Corp Temperature measuring device and temperature adjusting device
JP3888080B2 (en) * 2001-04-24 2007-02-28 日亜化学工業株式会社 Semiconductor laser element
US20030115978A1 (en) * 2001-12-20 2003-06-26 Moehnke Stephanie J. Apparatus and method for monitoring environment within a container
US7757574B2 (en) * 2002-01-24 2010-07-20 Kla-Tencor Corporation Process condition sensing wafer and data analysis system
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SG115733A1 (en) * 2004-03-12 2005-10-28 Semiconductor Energy Lab Thin film transistor, semiconductor device, and method for manufacturing the same
DE102004034192A1 (en) 2004-07-14 2006-02-09 Heraeus Sensor Technology Gmbh Platform chip useful in gas sensors comprises a conductor structure comprising an electrically conductive oxide and/or comprising components with durable stable resistance characteristics at high temperatures
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JP5314616B2 (en) * 2010-02-08 2013-10-16 富士フイルム株式会社 Manufacturing method of substrate for semiconductor element
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Also Published As

Publication number Publication date
WO2017136282A1 (en) 2017-08-10
SG10202007387PA (en) 2020-09-29
JP6944460B2 (en) 2021-10-06
US20170219437A1 (en) 2017-08-03
SG10201913252WA (en) 2020-03-30
TW201737382A (en) 2017-10-16
KR20180101616A (en) 2018-09-12
CN108604559A (en) 2018-09-28
TWI731929B (en) 2021-07-01
CN108604559B (en) 2023-06-13
JP2019508891A (en) 2019-03-28
US11150140B2 (en) 2021-10-19

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