SG11201900509YA - Simultaneous capturing of overlay signals from multiple targets - Google Patents
Simultaneous capturing of overlay signals from multiple targetsInfo
- Publication number
- SG11201900509YA SG11201900509YA SG11201900509YA SG11201900509YA SG11201900509YA SG 11201900509Y A SG11201900509Y A SG 11201900509YA SG 11201900509Y A SG11201900509Y A SG 11201900509YA SG 11201900509Y A SG11201900509Y A SG 11201900509YA SG 11201900509Y A SG11201900509Y A SG 11201900509YA
- Authority
- SG
- Singapore
- Prior art keywords
- international
- multiple targets
- pct
- field plane
- metrology
- Prior art date
Links
- 238000005516 engineering process Methods 0.000 abstract 2
- 230000003287 optical effect Effects 0.000 abstract 2
- 238000005286 illumination Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000008520 organization Effects 0.000 abstract 1
- 230000010287 polarization Effects 0.000 abstract 1
- 210000001747 pupil Anatomy 0.000 abstract 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J4/00—Measuring polarisation of light
- G01J4/04—Polarimeters using electric detection means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
- G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
- G01B11/272—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes using photoelectric detection means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/28—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/42—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect
- G02B27/4233—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect having a diffractive element [DOE] contributing to a non-imaging application
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N2021/4792—Polarisation of scatter light
Abstract
103 104 119 100 104 1158 FIG. 4 -102 111111111111111111111111111111 110 65 103-. 64 113 101 105A 62 11 111111111111 115A 1-1 GC N O Cr) O GC O 1-1 C (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 01 February 2018 (01.02.2018) WIP0 I PCT omit VIII °nolo III oloilino IIV X10111110 oimIE (10) International Publication Number WO 2018/023078 Al (51) International Patent Classification: GO1N 21/47(2006.01) GO2B 27/28 (2006.01) GO1N 21/95 (2006.01) GO2B 27/42 (2006.01) GO1B 11/00 (2006.01) (21) International Application Number: PCT/US2017/044528 (22) International Filing Date: 28 July 2017 (28.07.2017) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 15/222,503 28 July 2016 (28.07.2016) US (71) Applicant: KLA-TENCOR CORPORATION [US/US]; Legal Department, One Technology Drive, Milpitas, Cali- fornia 95035 (US). (72) Inventors: HILL, Andy (Andrew); 2112 Los Angeles Av- enue, Berkeley, California 94707 (US). MANASSEN, Am- non; 10 Golda Meir, 34892 Haifa (IL). PASKOVER, Yuri; 10 Schoham Str., 38900 Caesarea (IL). LUBASHEVSKY, Yuval; 22 Smolenskin St., 3436606 Haifa (IL). (74) Agent: MCANDREWS, Kevin et al.; KLA-Tencor Corp., Legal Department, One Technology Drive, Milpitas, Cali- fornia 95035 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, (54) Title: SIMULTANEOUS CAPTURING OF OVERLAY SIGNALS FROM MULTIPLE TARGETS (57) : Metrology methods and systems are provided, in which the detected image is split at a field plane of the collection path of the metrology system's optical system into at least two pupil plane images. Optical elements such as prisms may be used to split the field plane images, and multiple targets or target cells may be measured simultaneously by spatially splitting the field plane and/or the illumination sources and/or by using two polarization types. The simultaneous capturing of multiple targets or target cells increases the throughput of the disclosed metrology systems. [Continued on next page] WO 2018/023078 Al MIDEDIMOMOIDEIREIO I 0 10 1101 0111 INEEHMEHOM GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3))
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/222,503 US10048132B2 (en) | 2016-07-28 | 2016-07-28 | Simultaneous capturing of overlay signals from multiple targets |
PCT/US2017/044528 WO2018023078A1 (en) | 2016-07-28 | 2017-07-28 | Simultaneous capturing of overlay signals from multiple targets |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201900509YA true SG11201900509YA (en) | 2019-02-27 |
Family
ID=61009490
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201900509YA SG11201900509YA (en) | 2016-07-28 | 2017-07-28 | Simultaneous capturing of overlay signals from multiple targets |
SG10201912512UA SG10201912512UA (en) | 2016-07-28 | 2017-07-28 | Simultaneous capturing of overlay signals from multiple targets |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201912512UA SG10201912512UA (en) | 2016-07-28 | 2017-07-28 | Simultaneous capturing of overlay signals from multiple targets |
Country Status (7)
Country | Link |
---|---|
US (2) | US10048132B2 (en) |
JP (1) | JP6771647B2 (en) |
KR (1) | KR102180433B1 (en) |
CN (2) | CN109564160B (en) |
SG (2) | SG11201900509YA (en) |
TW (1) | TWI728157B (en) |
WO (1) | WO2018023078A1 (en) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
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EP3528047A1 (en) * | 2018-02-14 | 2019-08-21 | ASML Netherlands B.V. | Method and apparatus for measuring a parameter of interest using image plane detection techniques |
US10809124B2 (en) | 2018-05-07 | 2020-10-20 | Perkinelmer Health Sciences, Inc. | Spectrometers and instruments including them |
EP3575875A1 (en) * | 2018-05-31 | 2019-12-04 | ASML Netherlands B.V. | Measurement apparatus and method of measuring a target |
US11281111B2 (en) * | 2018-08-28 | 2022-03-22 | Kla-Tencor Corporation | Off-axis illumination overlay measurement using two-diffracted orders imaging |
US11360399B2 (en) | 2018-09-19 | 2022-06-14 | Asml Netherlands B.V. | Metrology sensor for position metrology |
US11119417B2 (en) * | 2018-11-21 | 2021-09-14 | Kla-Tencor Corporation | Single cell grey scatterometry overlay targets and their measurement using varying illumination parameter(s) |
US11073768B2 (en) | 2019-06-26 | 2021-07-27 | Kla Corporation | Metrology target for scanning metrology |
US11359916B2 (en) * | 2019-09-09 | 2022-06-14 | Kla Corporation | Darkfield imaging of grating target structures for overlay measurement |
US11933717B2 (en) | 2019-09-27 | 2024-03-19 | Kla Corporation | Sensitive optical metrology in scanning and static modes |
CN115004113A (en) | 2020-01-29 | 2022-09-02 | Asml荷兰有限公司 | Metrology method and apparatus for measuring periodic structures on a substrate |
US11604149B2 (en) * | 2020-04-23 | 2023-03-14 | Kla Corporation | Metrology methods and optical schemes for measurement of misregistration by using hatched target designs |
WO2022040207A1 (en) | 2020-08-17 | 2022-02-24 | Tokyo Electron Limited | Tunable wavelength see-through layer stack |
US11531275B1 (en) * | 2021-08-25 | 2022-12-20 | Kla Corporation | Parallel scatterometry overlay metrology |
WO2023072880A1 (en) * | 2021-10-29 | 2023-05-04 | Asml Netherlands B.V. | Inspection apparatus, polarization-maintaining rotatable beam displacer, and method |
WO2024017649A1 (en) * | 2022-07-19 | 2024-01-25 | Asml Netherlands B.V. | Enhanced alignment apparatus for lithographic systems |
WO2024033035A1 (en) * | 2022-08-10 | 2024-02-15 | Asml Netherlands B.V. | Metrology method and associated metrology device |
Family Cites Families (22)
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NL8600638A (en) * | 1986-03-12 | 1987-10-01 | Philips Nv | DEVICE FOR ALIGNING A MASK AND A SUBSTRATE WITH REGARD TO EACH OTHER |
JPH05157521A (en) * | 1991-08-29 | 1993-06-22 | Nkk Corp | Measuring method of ellipso parameter and ellipsometer |
US5734498A (en) * | 1994-05-09 | 1998-03-31 | The Regents Of The University Of California | Illuminator elements for conventional light microscopes |
US6710876B1 (en) * | 2000-08-14 | 2004-03-23 | Kla-Tencor Technologies Corporation | Metrology system using optical phase |
US6768543B1 (en) | 2001-11-01 | 2004-07-27 | Arun Ananth Aiyer | Wafer inspection apparatus with unique illumination methodology and method of operation |
US7957066B2 (en) | 2003-02-21 | 2011-06-07 | Kla-Tencor Corporation | Split field inspection system using small catadioptric objectives |
US7561282B1 (en) | 2006-03-27 | 2009-07-14 | Kla-Tencor Technologies Corporation | Techniques for determining overlay and critical dimension using a single metrology tool |
EP2071401B1 (en) * | 2006-04-04 | 2012-06-20 | tesa scribos GmbH | Device and method for microstructuring a storage medium and storage medium with a microstructured area |
US7692792B2 (en) * | 2006-06-22 | 2010-04-06 | Asml Netherlands B.V. | Method and apparatus for angular-resolved spectroscopic lithography characterization |
US7701577B2 (en) * | 2007-02-21 | 2010-04-20 | Asml Netherlands B.V. | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method |
IL194839A0 (en) * | 2007-10-25 | 2009-08-03 | Asml Netherlands Bv | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method |
US8441639B2 (en) * | 2009-09-03 | 2013-05-14 | Kla-Tencor Corp. | Metrology systems and methods |
NL2006229A (en) * | 2010-03-18 | 2011-09-20 | Asml Netherlands Bv | Inspection method and apparatus, and associated computer readable product. |
US8896832B2 (en) * | 2010-06-17 | 2014-11-25 | Kla-Tencor Corp. | Discrete polarization scatterometry |
WO2013152878A2 (en) * | 2012-04-12 | 2013-10-17 | Asml Holding N.V. | Position measuring method, position measuring apparatus, lithographic apparatus and device manufacturing method, optical element |
US8817273B2 (en) | 2012-04-24 | 2014-08-26 | Nanometrics Incorporated | Dark field diffraction based overlay |
JP6120967B2 (en) | 2012-08-16 | 2017-04-26 | エーエスエムエル ネザーランズ ビー.ブイ. | Method and apparatus for measuring asymmetry of microstructure, position measuring method, position measuring apparatus, lithographic apparatus and device manufacturing method |
CA2889495A1 (en) * | 2012-10-30 | 2014-05-08 | California Institute Of Technology | Fourier ptychographic imaging systems, devices, and methods |
US9091650B2 (en) * | 2012-11-27 | 2015-07-28 | Kla-Tencor Corporation | Apodization for pupil imaging scatterometry |
WO2015018625A1 (en) | 2013-08-07 | 2015-02-12 | Asml Netherlands B.V. | Metrology method and apparatus, lithographic system and device manufacturing method |
CN110082900B (en) * | 2013-08-22 | 2022-05-13 | 加州理工学院 | Variable illumination fourier ptychographic imaging apparatus, system and method |
US10795144B2 (en) * | 2014-12-06 | 2020-10-06 | Howard Hughes Medical Institute | Microscopy with structured plane illumination and point accumulation for imaging and nanoscale topography |
-
2016
- 2016-07-28 US US15/222,503 patent/US10048132B2/en active Active
-
2017
- 2017-07-28 KR KR1020197005724A patent/KR102180433B1/en active IP Right Grant
- 2017-07-28 SG SG11201900509YA patent/SG11201900509YA/en unknown
- 2017-07-28 JP JP2019504839A patent/JP6771647B2/en active Active
- 2017-07-28 CN CN201780046742.XA patent/CN109564160B/en active Active
- 2017-07-28 WO PCT/US2017/044528 patent/WO2018023078A1/en active Application Filing
- 2017-07-28 TW TW106125402A patent/TWI728157B/en active
- 2017-07-28 CN CN202011221908.7A patent/CN112432926A/en active Pending
- 2017-07-28 SG SG10201912512UA patent/SG10201912512UA/en unknown
-
2018
- 2018-08-01 US US16/052,044 patent/US10401228B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20180031424A1 (en) | 2018-02-01 |
CN112432926A (en) | 2021-03-02 |
KR20190026039A (en) | 2019-03-12 |
US20180335346A1 (en) | 2018-11-22 |
US10048132B2 (en) | 2018-08-14 |
TWI728157B (en) | 2021-05-21 |
US10401228B2 (en) | 2019-09-03 |
JP6771647B2 (en) | 2020-10-21 |
CN109564160A (en) | 2019-04-02 |
TW201805593A (en) | 2018-02-16 |
WO2018023078A1 (en) | 2018-02-01 |
SG10201912512UA (en) | 2020-02-27 |
CN109564160B (en) | 2020-11-10 |
KR102180433B1 (en) | 2020-11-19 |
JP2019526053A (en) | 2019-09-12 |
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