SG11201907074RA - Determining the impacts of stochastic behavior on overlay metrology data - Google Patents

Determining the impacts of stochastic behavior on overlay metrology data

Info

Publication number
SG11201907074RA
SG11201907074RA SG11201907074RA SG11201907074RA SG11201907074RA SG 11201907074R A SG11201907074R A SG 11201907074RA SG 11201907074R A SG11201907074R A SG 11201907074RA SG 11201907074R A SG11201907074R A SG 11201907074RA SG 11201907074R A SG11201907074R A SG 11201907074RA
Authority
SG
Singapore
Prior art keywords
international
noise
metrology
pct
stochastic
Prior art date
Application number
SG11201907074RA
Inventor
Evgeni Gurevich
Michael E Adel
Roel Gronheid
Yoel Feler
Vladimir Levinski
Dana Klein
Sharon Aharon
Original Assignee
Kla Tencor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kla Tencor Corp filed Critical Kla Tencor Corp
Publication of SG11201907074RA publication Critical patent/SG11201907074RA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/22—Connection or disconnection of sub-entities or redundant parts of a device in response to a measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/32—Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams

Abstract

1 N 1-1 O O 1-1 00 O N C (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 07 September 2018 (07.09.2018) WIP0 I PCT IiiimmoinionotiolomomioollmiooliolomovoimIE (10) International Publication Number WO 2018/160502 Al A (51) International Patent Classification: HO1L 21/66 (2006.01) (21) International Application Number: PCT/US2018/019793 (22) International Filing Date: 27 February 2018 (27.02.2018) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 62/464,382 28 February 2017 (28.02.2017) US 62/591,104 27 November 2017 (27.11.2017) US (71) Applicant: KLA-TENCOR CORPORATION [US/US]; Legal Department, One Technology Drive, Milpitas, Cali- fornia 95035 (US). (72) Inventors: GUREVICH, Evgeni; Hardufim Str. 12/7, 2063212 Yokneam Illit (IL). ADEL, Michael E.; 14 Yi- gal Alon Street, 30900 Ya'akov Zichron (IL). GRON- HEID, Roel; Sint Jansbergsesteenweg 83, 3001 Leuven (BE). FELER, Yoel; Derech Yad LeBanim 82/2, 32163 Haifa (IL). LEVINSKI, Vladimir; Hermon 9, 23100 Migdal HaEmek (IL). KLEIN, Dana; Alexander Yanai 23, Carmeliya, 34816 Haifa (IL). AHARON, Sharon; Yuval 40, 1796000 Hanaton (IL). (74) Agent: MCANDREWS, Kevin et al.; KLA-Tencor Corp., Legal Department, One Technology Drive, Milpitas, Cali- fornia 95035 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, (54) Title: DETERMINING THE IMPACTS OF STOCHASTIC BEHAVIOR ON OVERLAY METROLOGY DATA MEASUREMENT MODEL CPE EIHO—W3F1 < 0.6 cp 0.4 (7) r., - ) _1 — 0.2 0.0 0 NOISE 1 0.5nm NOISE 2 0.4nm NOISE 3 0.3nm Figure 2 (57) : Methods are provided for designing metrology targets and estimating the uncertainty error of metrology metric values with respect to stochastic noise such as line properties (e.g., line edge roughness, LER). Minimal required dimensions of target elements may be derived from analysis of the line properties and uncertainty error of metrology measurements, by either CDSEM (critical dimension scanning electron microscopy) or optical systems, with corresponding targets. The importance of this analysis is emphasized in view of the finding that stochastic noise may have increased importance with when using more localized models such as CPE (correctables per exposure). The uncertainty error estimation may be used for target design, enhancement of overlay estimation and evaluation of measurement reliability in multiple contexts. [Continued on next page] WO 2018/160502 Al MIDEDIMOMMIDIREE301111001IMEIMiliEVOIS SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3))
SG11201907074RA 2017-02-28 2018-02-27 Determining the impacts of stochastic behavior on overlay metrology data SG11201907074RA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201762464382P 2017-02-28 2017-02-28
US201762591104P 2017-11-27 2017-11-27
PCT/US2018/019793 WO2018160502A1 (en) 2017-02-28 2018-02-27 Determining the impacts of stochastic behavior on overlay metrology data

Publications (1)

Publication Number Publication Date
SG11201907074RA true SG11201907074RA (en) 2019-09-27

Family

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Application Number Title Priority Date Filing Date
SG11201907074RA SG11201907074RA (en) 2017-02-28 2018-02-27 Determining the impacts of stochastic behavior on overlay metrology data

Country Status (7)

Country Link
US (1) US10901325B2 (en)
JP (1) JP6960462B2 (en)
KR (1) KR102351345B1 (en)
CN (1) CN110383442B (en)
SG (1) SG11201907074RA (en)
TW (1) TWI735747B (en)
WO (1) WO2018160502A1 (en)

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US10488188B2 (en) 2017-04-13 2019-11-26 Fractilia, Llc System and method for removing noise from roughness measurements
US11355306B2 (en) 2017-04-13 2022-06-07 Fractilia, Llc System and method for generating and analyzing roughness measurements and their use for process monitoring and control
US11380516B2 (en) 2017-04-13 2022-07-05 Fractilia, Llc System and method for generating and analyzing roughness measurements and their use for process monitoring and control
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Also Published As

Publication number Publication date
CN110383442B (en) 2023-10-10
JP2020511003A (en) 2020-04-09
TWI735747B (en) 2021-08-11
CN110383442A (en) 2019-10-25
TW201840954A (en) 2018-11-16
JP6960462B2 (en) 2021-11-05
KR20190115105A (en) 2019-10-10
WO2018160502A1 (en) 2018-09-07
US10901325B2 (en) 2021-01-26
KR102351345B1 (en) 2022-01-13
US20190049858A1 (en) 2019-02-14

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