SG11201703377SA - Composite substrate manufacturing method and composite substrate - Google Patents
Composite substrate manufacturing method and composite substrateInfo
- Publication number
- SG11201703377SA SG11201703377SA SG11201703377SA SG11201703377SA SG11201703377SA SG 11201703377S A SG11201703377S A SG 11201703377SA SG 11201703377S A SG11201703377S A SG 11201703377SA SG 11201703377S A SG11201703377S A SG 11201703377SA SG 11201703377S A SG11201703377S A SG 11201703377SA
- Authority
- SG
- Singapore
- Prior art keywords
- composite substrate
- manufacturing
- substrate manufacturing
- composite
- substrate
- Prior art date
Links
- 239000002131 composite material Substances 0.000 title 2
- 239000000758 substrate Substances 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02527—Carbon, e.g. diamond-like carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02378—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/7602—Making of isolation regions between components between components manufactured in an active substrate comprising SiC compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
- Laminated Bodies (AREA)
- Carbon And Carbon Compounds (AREA)
- Physical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014246797 | 2014-12-05 | ||
PCT/JP2015/079763 WO2016088466A1 (en) | 2014-12-05 | 2015-10-22 | Composite substrate manufacturing method and composite substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201703377SA true SG11201703377SA (en) | 2017-05-30 |
Family
ID=56091422
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10202008808TA SG10202008808TA (en) | 2014-12-05 | 2015-10-22 | Composite substrate manufacturing method and composite substrate |
SG11201703377SA SG11201703377SA (en) | 2014-12-05 | 2015-10-22 | Composite substrate manufacturing method and composite substrate |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10202008808TA SG10202008808TA (en) | 2014-12-05 | 2015-10-22 | Composite substrate manufacturing method and composite substrate |
Country Status (6)
Country | Link |
---|---|
US (1) | US20170330747A1 (en) |
EP (1) | EP3229260A4 (en) |
JP (1) | JPWO2016088466A1 (en) |
CN (1) | CN107004573A (en) |
SG (2) | SG10202008808TA (en) |
WO (1) | WO2016088466A1 (en) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SG11201704904WA (en) * | 2014-12-22 | 2017-07-28 | Shinetsu Chemical Co | Composite substrate, method for forming nanocarbon film, and nanocarbon film |
US10529616B2 (en) * | 2015-11-20 | 2020-01-07 | Globalwafers Co., Ltd. | Manufacturing method of smoothing a semiconductor surface |
US11800805B2 (en) | 2016-11-11 | 2023-10-24 | Shin-Etsu Chemical Co., Ltd. | Composite substrate, surface acoustic wave device, and method for manufacturing composite substrate |
JP6696917B2 (en) * | 2017-01-18 | 2020-05-20 | 信越化学工業株式会社 | Manufacturing method of composite substrate |
JP6648339B2 (en) | 2017-12-28 | 2020-02-14 | 日本碍子株式会社 | Bonded body of piezoelectric material substrate and support substrate and method of manufacturing the same |
CN110078017B (en) * | 2018-01-26 | 2021-11-05 | 沈阳硅基科技有限公司 | Processing method of silicon wafer with through cavity structure |
CN109686656A (en) * | 2018-11-13 | 2019-04-26 | 中国科学院上海微系统与信息技术研究所 | A kind of preparation method of the heterogeneous integrated carborundum films structure of silicon substrate |
CN109678106B (en) * | 2018-11-13 | 2020-10-30 | 中国科学院上海微系统与信息技术研究所 | Preparation method of silicon-based heterogeneous integrated 4H-SiC epitaxial thin film structure |
WO2020138202A1 (en) * | 2018-12-28 | 2020-07-02 | 国立研究開発法人産業技術総合研究所 | Graphite thin film/silicon substrate laminate, method for producing same and substrate for high exhaust heat-type electronic devices |
JP7205233B2 (en) * | 2019-01-04 | 2023-01-17 | 富士通株式会社 | Semiconductor device, method for manufacturing semiconductor device, and method for bonding substrate |
CN110473778B (en) * | 2019-08-17 | 2021-10-15 | 哈尔滨工业大学 | Method for directly bonding zirconium oxide and aluminum oxide by using plasma activation |
FR3101726B1 (en) | 2019-10-04 | 2021-10-01 | Commissariat Energie Atomique | manufacturing process of an electronic device |
CN111893558B (en) * | 2020-07-01 | 2021-08-17 | 中国科学院上海微系统与信息技术研究所 | Thin film heat insulation sheet for monocrystalline silicon growth furnace and monocrystalline silicon growth furnace |
FR3128057B1 (en) * | 2021-10-07 | 2023-09-15 | Soitec Silicon On Insulator | METHOD FOR MANUFACTURING A COMPOSITE STRUCTURE COMPRISING A THIN MONOCRYSTALLINE SIC LAYER ON A POLY-CRYSTALLINE SIC SUPPORT SUBSTRATE |
CN114525489B (en) * | 2022-01-25 | 2023-04-25 | 中国科学院上海微系统与信息技术研究所 | Preparation method of silicon-based silicon carbide film material |
CN114864529A (en) * | 2022-05-18 | 2022-08-05 | 北京青禾晶元半导体科技有限责任公司 | Silicon carbide composite substrate and manufacturing method and application thereof |
CN116817804B (en) * | 2023-08-24 | 2023-11-03 | 江苏集创原子团簇科技研究院有限公司 | Method for accurately calibrating ion implantation depth in multilayer graphene |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4172806B2 (en) * | 2006-09-06 | 2008-10-29 | 三菱重工業株式会社 | Room temperature bonding method and room temperature bonding apparatus |
JP2009117533A (en) * | 2007-11-05 | 2009-05-28 | Shin Etsu Chem Co Ltd | Manufacturing method of silicon carbide substrate |
CN101521155B (en) * | 2008-02-29 | 2012-09-12 | 信越化学工业株式会社 | Method for preparing substrate having monocrystalline film |
JP5496598B2 (en) * | 2008-10-31 | 2014-05-21 | 信越化学工業株式会社 | Manufacturing method of silicon thin film transfer insulating wafer |
JP2012182201A (en) * | 2011-02-28 | 2012-09-20 | Shin Etsu Chem Co Ltd | Method of manufacturing semiconductor wafer |
EP2907790B1 (en) * | 2012-10-15 | 2019-05-08 | Shin-Etsu Chemical Co., Ltd. | Method for producing nanocarbon film and nanocarbon film |
-
2015
- 2015-10-22 EP EP15864392.4A patent/EP3229260A4/en not_active Withdrawn
- 2015-10-22 SG SG10202008808TA patent/SG10202008808TA/en unknown
- 2015-10-22 SG SG11201703377SA patent/SG11201703377SA/en unknown
- 2015-10-22 JP JP2016562345A patent/JPWO2016088466A1/en active Pending
- 2015-10-22 CN CN201580066099.8A patent/CN107004573A/en active Pending
- 2015-10-22 WO PCT/JP2015/079763 patent/WO2016088466A1/en active Application Filing
- 2015-10-22 US US15/532,517 patent/US20170330747A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
EP3229260A4 (en) | 2018-07-25 |
US20170330747A1 (en) | 2017-11-16 |
WO2016088466A1 (en) | 2016-06-09 |
CN107004573A (en) | 2017-08-01 |
EP3229260A1 (en) | 2017-10-11 |
JPWO2016088466A1 (en) | 2017-08-31 |
SG10202008808TA (en) | 2020-10-29 |
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