CN109686656A - A kind of preparation method of the heterogeneous integrated carborundum films structure of silicon substrate - Google Patents
A kind of preparation method of the heterogeneous integrated carborundum films structure of silicon substrate Download PDFInfo
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- CN109686656A CN109686656A CN201811347792.4A CN201811347792A CN109686656A CN 109686656 A CN109686656 A CN 109686656A CN 201811347792 A CN201811347792 A CN 201811347792A CN 109686656 A CN109686656 A CN 109686656A
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 76
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 51
- 239000010703 silicon Substances 0.000 title claims abstract description 51
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 51
- 239000000758 substrate Substances 0.000 title claims abstract description 49
- 238000002360 preparation method Methods 0.000 title claims abstract description 27
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 52
- 238000002347 injection Methods 0.000 claims abstract description 39
- 239000007924 injection Substances 0.000 claims abstract description 39
- 239000013078 crystal Substances 0.000 claims abstract description 35
- 239000002131 composite material Substances 0.000 claims abstract description 26
- 238000010276 construction Methods 0.000 claims abstract description 26
- 238000002513 implantation Methods 0.000 claims abstract description 24
- 238000000137 annealing Methods 0.000 claims abstract description 22
- 230000007547 defect Effects 0.000 claims abstract description 21
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000010884 ion-beam technique Methods 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 238000005498 polishing Methods 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 238000004381 surface treatment Methods 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 claims description 2
- 238000001020 plasma etching Methods 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 33
- 239000010409 thin film Substances 0.000 abstract description 7
- 239000000463 material Substances 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910003978 SiClx Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000001534 heteroepitaxy Methods 0.000 description 2
- 229910003465 moissanite Inorganic materials 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
Abstract
The present invention relates to a kind of preparation methods of the heterogeneous integrated carborundum films structure of silicon substrate, comprising steps of providing the silicon carbide single crystal wafer with injection face；It carries out hydrogen ion towards silicon carbide single crystal wafer from injection to inject to form implantation defect layer, the top of the implantation defect layer forms silicon carbide single crystal film；Injection face is bonded with a silicon support substrate, obtain include silicon carbide single crystal wafer and silicon support substrate the first composite construction；First composite construction is made annealing treatment, so that the first composite construction is removed along implantation defect layer, obtains the second composite construction, wherein implantation defect layer forms damaging layer, and the second composite construction includes damaging layer, silicon carbide single crystal film and silicon support substrate；Second composite construction is surface-treated obtained with removing damaging layer include silicon carbide single crystal film and silicon support substrate the heterogeneous integrated carborundum films structure of silicon substrate.The problem of crystalline quality difference is not present in the integrated thin-film structure that preparation method of the invention obtains.
Description
Technical field
The present invention relates to the preparations of information functional material, relate more specifically to a kind of heterogeneous integrated carborundum films knot of silicon substrate
The preparation method of structure.
Background technique
SiC is a kind of semiconductor material with wide forbidden band, and forbidden bandwidth 2.3-3.4eV still has steady in the high temperature environment
Fixed electric property.The Knoop hardness of SiC reaches 2480kg/mm2, Young's modulus reaches 700GPa, with outstanding mechanicalness
Energy.In addition, SiC material chemical property is stablized, it can work in the environment with strong corrosive, be high temperature, high pressure etc. is harsh
Under the conditions of MEMS (MEMS) device ideal material.
In addition, it is contemplated that the optical characteristics of SiC, SiC is integrated optics, non-linear and opto-mechanical device ideal material.
Compared with other materials, SiC combines high refractive index (n=2.6), broad stopband, high second order and third-order nonlinear optical coefficient.Height refraction
Rate realizes the high limitation of optical mode, will bring greater flexibility in dispersion field.Broad-band gap makes under high-power
Optical absorption loss minimizes, and high second order and three ranks make SiC have outstanding performance in nonlinear optics application.
SiC material has more than 200 kinds of crystal forms, wherein applying at most is 3C-SiC, 4H-SiC and 6H-SiC.3C-SiC is thin
Film is mainly the method for utilizing aumospheric pressure cvd (APCVD) and rpcvd (RPCVD), in Si substrate table
Face deposits SiC film.The 3C-SiC film prepared in this way is mainly polycrystal film, and crystal quality is unable to reach monocrystalline.
However, the growth temperature of 6H-SiC is greater than the melting temperature of silicon due to 4H-SiC, traditional thin film deposition hetero-epitaxy can not be passed through
Method silicon substrate grow monocrystal SiC film, therefore, which results in difficulty of the SiC film in growth.And certainly due to SiC
The hardness of body is greatly and characteristics, the direct processome material such as corrosion-resistant are again very difficult.
Summary of the invention
In order to solve it is above-mentioned it is of the existing technology can not be by the method for traditional thin film deposition hetero-epitaxy in silicon substrate
The problem of growing monocrystal SiC film, the present invention is intended to provide a kind of preparation method of the heterogeneous integrated carborundum films structure of silicon substrate.
The present invention provides a kind of preparation method of heterogeneous integrated carborundum films structure of silicon substrate, comprising steps of S1, provides tool
There is the silicon carbide single crystal wafer of injection face；S2 carries out hydrogen ion injection from the injection towards silicon carbide single crystal wafer, so that note
Enter ion to reach predetermined depth and form implantation defect layer at predetermined depth, the top of the implantation defect layer forms silicon carbide list
Brilliant film；The injection face is bonded with a silicon support substrate, obtains including silicon carbide single crystal wafer and silicon support substrate by S3
First composite construction；S4 makes annealing treatment the first composite construction, so that the first composite construction is shelled along implantation defect layer
From obtaining the second composite construction, wherein implantation defect layer forms damaging layer, and the second composite construction includes damaging layer, silicon carbide list
Brilliant film and silicon support substrate；S5 is surface-treated to remove damaging layer the second composite construction, obtains including silicon carbide list
The heterogeneous integrated carborundum films structure of the silicon substrate of brilliant film and silicon support substrate.
Preferably, the size of the silicon carbide single crystal wafer is grade chip or wafer scale chip.
Preferably, the energy of hydrogen ion injection is 20keV-2MeV, and dosage is 1 × 1016cm-2-1×1017cm-2.It is preferred that
Ground, predetermined depth be 100nm-2 μm, i.e., the described silicon carbide single crystal film with a thickness of 100nm-2 μm.In a preferred implementation
Example in, the silicon carbide single crystal film with a thickness of 500nm.
Preferably, the silicon support substrate is substrate wafer.Preferably, the silicon support substrate with a thickness of 200 μm-
1mm。
In the step S3, it is preferable that one layer of dielectric layer is grown in silicon support substrate, to the injection face and described
The injection face is bonded by dielectric layer after carrying out plasma-activated processing with the dielectric layer.Preferably, the gas of plasma-activated
Body includes but is not limited to oxygen, nitrogen, argon gas etc..Preferably, bonding temperature is between 20 DEG C and 800 DEG C.Preferably, it is bonded
Environmental condition includes but is not limited to normal temperature and pressure, vacuum environment, nitrogen atmosphere etc..Preferably, the dielectric layer is silica, oxygen
Change at least one of aluminium or silicon nitride.Preferably, the forming method of the dielectric layer includes but is not limited to thermal oxide or gas
Mutually deposit.Preferably, the thickness of the dielectric layer is between 0nm-5 μm.
In the step S4, made annealing treatment in the environment of vacuum, nitrogen, argon gas or hydrogen so that silicon carbide
Monocrystal thin films are transferred in silicon support substrate by annealing.Moreover, by the annealing, silicon carbide single crystal film with
The bond strength of silicon support substrate is further strengthened.Preferably, annealing temperature is 500 DEG C -1300 DEG C, and annealing time is 1 point
Clock -24 hours.
In the step S5, the surface treatment using remove the method for damaging layer as high annealing, chemically mechanical polishing,
At least one of reactive ion etching, ion beam etching or the polishing of ion beam glancing incidence.By the surface treatment so that carbon
It is horizontal that the surface of SiClx monocrystal thin films reaches device preparation.Ion beam energy range 1ev~10kev of ion beam etching, environment
100~600 degrees Celsius of temperature, 40 °~90 ° of ion beam incident angle, 1~120min of process time, to obtain high quality
Silicon carbide single crystal film.
Preparation method according to the present invention is infused in formation implantation defect at the predetermined depth under injection face by hydrogen ion
Layer, is then bonded with silicon support substrate, and the structure after bonding is annealed, so that silicon carbide single crystal film is transferred to silicon support
On substrate, surface treatment then is carried out to silicon carbide single crystal film and forms the heterogeneous integrated carborundum films structure of silicon substrate.In this way, this
The problem of crystalline quality difference is not present in the integrated thin-film structure that the preparation method of invention obtains.
Detailed description of the invention
Fig. 1 is the sectional view for the unimplanted silicon carbide single crystal wafer that preparation method according to the present invention provides；
Fig. 2 is the sectional view of the silicon carbide single crystal wafer after the injection that preparation method according to the present invention provides；
Fig. 3 is that the silicon carbide single crystal wafer after the injection that preparation method according to the present invention provides is bonded with silicon support substrate
The sectional view of the first obtained composite construction；
Fig. 4 is the section that the first composite construction that preparation method according to the present invention provides is removed along implantation defect layer
Figure；
Fig. 5 is the sectional view for the heterogeneous integrated carborundum films structure of silicon substrate that preparation method according to the present invention provides.
Specific embodiment
With reference to the accompanying drawing, presently preferred embodiments of the present invention is provided, and is described in detail.
The preparation side of the heterogeneous integrated carborundum films structure of silicon substrate according to the present invention includes:
1) silicon carbide single crystal wafer 1 with injection face 1a is provided, as shown in Figure 1；
2) hydrogen ion injection, silicon carbide list are carried out to silicon carbide single crystal wafer 1 from injection face 1a along the arrow direction of Fig. 2
Jingjing piece 1 forms implantation defect layer 11 at the predetermined depth apart from injection face 1a, and the top of the implantation defect layer 11 forms carbon
SiClx monocrystal thin films 12；
3) one layer of dielectric layer 21 is grown in silicon support substrate 2, and injection face 1a is bonded with dielectric layer 21, as shown in figure 3,
To the first composite construction including silicon carbide single crystal wafer 1 and silicon support substrate 2；
4) the first composite construction is made annealing treatment, as shown in figure 4, making the first composite construction along implantation defect layer
11 removings obtain the second composite construction, wherein implantation defect layer 11 forms damaging layer 111, and the second composite construction includes damaging layer
111, silicon carbide single crystal film 12 and silicon support substrate 2；
5) it carries out surface treatment and removes damaging layer 111 in the second composite construction, obtain as shown in Figure 5 including silicon carbide
The heterogeneous integrated carborundum films structure of the silicon substrate of monocrystal thin films 12 and silicon support substrate 2.
Embodiment 1
Millimetre-sized silicon carbide single crystal wafer is provided.Hydrogen ion injection, Implantation Energy 200keV, note are carried out from injection face
Entering dosage is 8 × 1016ions/cm2, implantation defect layer is being formed at about 1 μm of injection face.Lining is supported in the silicon of 500 μ m-thicks
The SiO of one layer of 2 μ m-thick is grown on bottom2Dielectric layer, by injection face and SiO2Dielectric layer bonding, bonding temperature are 100 DEG C.Under vacuum
Annealing, annealing temperature are 1000 DEG C, annealing time 30min.Chemically mechanical polishing removes damaging layer, and it is heterogeneous to obtain silicon substrate
Integrated carborundum films structure.
Embodiment 2
The silicon carbide single crystal wafer of wafer scale is provided.Hydrogen ion injection, Implantation Energy 20keV, note are carried out from injection face
Entering dosage is 4 × 1016ions/cm2, implantation defect layer is being formed at injection face about 200nm.By injection face and 300 μ m-thicks
Silicon support substrate Direct Bonding, bonding temperature be 20 DEG C.It is made annealing treatment under nitrogen atmosphere, annealing temperature is 900 DEG C, when annealing
Between be 2h.Ion beam etching removes damaging layer, energy 2kev, and environment temperature is 300 degrees Celsius, and ion beam incident angle is
60 °, process time 5min, obtain the heterogeneous integrated carborundum films structure of silicon substrate.
Embodiment 3
The silicon carbide single crystal wafer of wafer scale is provided.Hydrogen ion injection, Implantation Energy 1MeV, injection are carried out from injection face
Dosage is 1 × 1017ions/cm2, implantation defect layer is being formed at about 2 μm of injection face.In the silicon support substrate of 1mm thickness
The alumina medium layer for growing one layer of 2 μ m-thick, injection face is bonded with alumina medium layer, and bonding temperature is 600 DEG C.Argon gas gas
It is made annealing treatment under atmosphere, annealing temperature is 1300 DEG C, annealing time 8h.The polishing of ion beam glancing incidence removes damaging layer, obtains silicon
The heterogeneous integrated carborundum films structure of base.
Above-described, only presently preferred embodiments of the present invention, the range being not intended to limit the invention, of the invention is upper
Stating embodiment can also make a variety of changes.Made by i.e. all claims applied according to the present invention and description
Simply, equivalent changes and modifications fall within the claims of the invention patent.The not detailed description of the present invention is
Routine techniques content.
Claims (9)
1. a kind of preparation method of the heterogeneous integrated carborundum films structure of silicon substrate, which is characterized in that the preparation method comprising steps of
S1 provides the silicon carbide single crystal wafer with injection face；
S2 carries out hydrogen ion injection from the injection towards silicon carbide single crystal wafer, so that injection ion reaches predetermined depth simultaneously
Implantation defect layer is formed at predetermined depth, the top of the implantation defect layer forms silicon carbide single crystal film；
The injection face is bonded by S3 with a silicon support substrate, obtains including the of silicon carbide single crystal wafer and silicon support substrate
One composite construction；
S4 makes annealing treatment the first composite construction, so that the first composite construction is removed along implantation defect layer, obtains second
Composite construction, wherein implantation defect layer forms damaging layer, and the second composite construction includes damaging layer, silicon carbide single crystal film and silicon
Support substrate；
S5 is surface-treated to remove damaging layer the second composite construction, obtains including silicon carbide single crystal film and silicon support
The heterogeneous integrated carborundum films structure of the silicon substrate of substrate.
2. preparation method according to claim 1, which is characterized in that the energy of hydrogen ion injection is 20keV-2MeV, agent
Amount is 1 × 1016cm-2-1×1017cm-2。
3. preparation method according to claim 1, which is characterized in that predetermined depth is 100nm-2 μm.
4. preparation method according to claim 1, which is characterized in that the silicon support substrate with a thickness of 200 μm of -1mm.
5. preparation method according to claim 1, which is characterized in that in the step S3, raw in silicon support substrate
Long one layer of dielectric layer, to the injection face and the dielectric layer carry out after plasma-activated processing by the injection face with given an account of
The bonding of matter layer.
6. preparation method according to claim 5, which is characterized in that the dielectric layer is silica, aluminium oxide or nitridation
At least one of silicon.
7. preparation method according to claim 1, which is characterized in that bonding temperature is between 20 DEG C and 800 DEG C.
8. preparation method according to claim 1, which is characterized in that in the step S4, in vacuum, nitrogen, argon gas
Or it is made annealing treatment in the environment of hydrogen so that silicon carbide single crystal film is transferred to silicon support substrate by annealing
On.
9. preparation method according to claim 1, which is characterized in that in the step S5, the surface treatment is to go
Except the method for damaging layer is high annealing, chemically mechanical polishing, reactive ion etching, ion beam etching or ion beam glancing incidence
At least one of polishing.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111865250A (en) * | 2020-07-10 | 2020-10-30 | 中国科学院上海微系统与信息技术研究所 | POI substrate, high-frequency acoustic wave resonator and preparation method thereof |
| CN112713082A (en) * | 2019-10-25 | 2021-04-27 | 中国电子科技集团公司第四十八研究所 | Substrate for preparing gallium nitride radio frequency device, preparation method of substrate and gallium nitride radio frequency device |
| CN113178383A (en) * | 2021-03-10 | 2021-07-27 | 华为技术有限公司 | Silicon carbide substrate, silicon carbide device and substrate thinning method thereof |
| CN113658849A (en) * | 2021-07-06 | 2021-11-16 | 华为技术有限公司 | Composite substrate, manufacturing method thereof, semiconductor device and electronic equipment |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105957831A (en) * | 2016-07-06 | 2016-09-21 | 中国科学院上海微系统与信息技术研究所 | Method for manufacturing monocrystal material thin layer structure on supporting substrate |
| CN107004573A (en) * | 2014-12-05 | 2017-08-01 | 信越化学工业株式会社 | The manufacture method and composite base plate of composite base plate |
| CN108493334A (en) * | 2018-03-15 | 2018-09-04 | 中国科学院上海微系统与信息技术研究所 | A kind of preparation method of thin film heteroj structure |
-
2018
- 2018-11-13 CN CN201811347792.4A patent/CN109686656A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107004573A (en) * | 2014-12-05 | 2017-08-01 | 信越化学工业株式会社 | The manufacture method and composite base plate of composite base plate |
| CN105957831A (en) * | 2016-07-06 | 2016-09-21 | 中国科学院上海微系统与信息技术研究所 | Method for manufacturing monocrystal material thin layer structure on supporting substrate |
| CN108493334A (en) * | 2018-03-15 | 2018-09-04 | 中国科学院上海微系统与信息技术研究所 | A kind of preparation method of thin film heteroj structure |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112713082A (en) * | 2019-10-25 | 2021-04-27 | 中国电子科技集团公司第四十八研究所 | Substrate for preparing gallium nitride radio frequency device, preparation method of substrate and gallium nitride radio frequency device |
| CN111865250A (en) * | 2020-07-10 | 2020-10-30 | 中国科学院上海微系统与信息技术研究所 | POI substrate, high-frequency acoustic wave resonator and preparation method thereof |
| CN111865250B (en) * | 2020-07-10 | 2021-10-19 | 中国科学院上海微系统与信息技术研究所 | POI substrate, high-frequency acoustic wave resonator and preparation method thereof |
| CN113178383A (en) * | 2021-03-10 | 2021-07-27 | 华为技术有限公司 | Silicon carbide substrate, silicon carbide device and substrate thinning method thereof |
| CN113658849A (en) * | 2021-07-06 | 2021-11-16 | 华为技术有限公司 | Composite substrate, manufacturing method thereof, semiconductor device and electronic equipment |
| CN113690298A (en) * | 2021-10-26 | 2021-11-23 | 北京青禾晶元半导体科技有限责任公司 | Semiconductor composite substrate, semiconductor device and preparation method |
| WO2024040880A1 (en) * | 2022-08-25 | 2024-02-29 | 青禾晶元(天津)半导体材料有限公司 | Composite silicon carbide substrate and preparation method therefor |
| CN116705605A (en) * | 2023-06-20 | 2023-09-05 | 中国科学院上海微系统与信息技术研究所 | Silicon-based gallium nitride HEMT device and preparation method thereof |
| CN116741639A (en) * | 2023-06-20 | 2023-09-12 | 中国科学院上海微系统与信息技术研究所 | Method for manufacturing semiconductor device and semiconductor device |
| CN116774469A (en) * | 2023-06-20 | 2023-09-19 | 中国科学院上海微系统与信息技术研究所 | Device manufacturing method and structure |
| CN117438391A (en) * | 2023-12-18 | 2024-01-23 | 北京青禾晶元半导体科技有限责任公司 | High-thermal-conductivity 3C-SiC polycrystalline substrate and preparation method thereof |
| CN117438391B (en) * | 2023-12-18 | 2024-03-15 | 北京青禾晶元半导体科技有限责任公司 | High-thermal-conductivity 3C-SiC polycrystalline substrate and preparation method thereof |
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Application publication date: 20190426 |