SG10201407629YA - Substrate with bump structure and manufacturing method thereof - Google Patents

Substrate with bump structure and manufacturing method thereof

Info

Publication number
SG10201407629YA
SG10201407629YA SG10201407629YA SG10201407629YA SG10201407629YA SG 10201407629Y A SG10201407629Y A SG 10201407629YA SG 10201407629Y A SG10201407629Y A SG 10201407629YA SG 10201407629Y A SG10201407629Y A SG 10201407629YA SG 10201407629Y A SG10201407629Y A SG 10201407629YA
Authority
SG
Singapore
Prior art keywords
substrate
manufacturing
bump structure
bump
Prior art date
Application number
SG10201407629YA
Inventor
Wu Fei-Jain
Liao Tsang-Sheng
Huang Ching-Yi
Lee Chun-Te
Original Assignee
Chipbond Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chipbond Technology Corp filed Critical Chipbond Technology Corp
Publication of SG10201407629YA publication Critical patent/SG10201407629YA/en

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Classifications

    • H—ELECTRICITY
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    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
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    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
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    • H01L2224/039—Methods of manufacturing bonding areas involving a specific sequence of method steps
    • H01L2224/03912—Methods of manufacturing bonding areas involving a specific sequence of method steps the bump being used as a mask for patterning the bonding area
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing Of Printed Wiring (AREA)
SG10201407629YA 2014-07-25 2014-11-17 Substrate with bump structure and manufacturing method thereof SG10201407629YA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW103125555A TWI488244B (en) 2014-07-25 2014-07-25 Substrate with pillar structure and manufacturing method thereof

Publications (1)

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SG10201407629YA true SG10201407629YA (en) 2016-02-26

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US (1) US9177830B1 (en)
JP (1) JP2016032090A (en)
KR (1) KR20160012857A (en)
CN (2) CN105280508B (en)
SG (1) SG10201407629YA (en)
TW (1) TWI488244B (en)

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* Cited by examiner, † Cited by third party
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TWI488244B (en) * 2014-07-25 2015-06-11 Chipbond Technology Corp Substrate with pillar structure and manufacturing method thereof
GB2557614A (en) * 2016-12-12 2018-06-27 Infineon Technologies Austria Ag Semiconductor device, electronic component and method
CN107481988B (en) * 2017-07-28 2020-09-01 永道无线射频标签(扬州)有限公司 Flip chip packaging product without conductive adhesive and manufacturing process thereof
US10692830B2 (en) * 2017-10-05 2020-06-23 Texas Instruments Incorporated Multilayers of nickel alloys as diffusion barrier layers
US11127704B2 (en) 2017-11-28 2021-09-21 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with bump structure and method of making semiconductor device
TW201930646A (en) * 2018-01-05 2019-08-01 頎邦科技股份有限公司 Semiconductor device with bump structure and method for manufacturing the same
CN110310939B (en) * 2018-03-27 2021-04-30 矽品精密工业股份有限公司 Substrate structure and manufacturing method thereof and conductive bump

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0797587B2 (en) * 1987-03-12 1995-10-18 株式会社東芝 Method for manufacturing semiconductor device
JP2000323510A (en) * 1999-05-11 2000-11-24 Shinko Electric Ind Co Ltd Semiconductor wafer having columnar electrodes, manufacture of the same, and semiconductor device
JP2003037129A (en) * 2001-07-25 2003-02-07 Rohm Co Ltd Semiconductor device and method of manufacturing the same
TWI252546B (en) 2004-11-03 2006-04-01 Advanced Semiconductor Eng Bumping process and structure thereof
JP2007287906A (en) * 2006-04-17 2007-11-01 Elpida Memory Inc Electrode, electrode manufacturing method, and semiconductor device provided with electrode
US8269345B2 (en) 2007-10-11 2012-09-18 Maxim Integrated Products, Inc. Bump I/O contact for semiconductor device
TW201019440A (en) 2008-11-03 2010-05-16 Int Semiconductor Tech Ltd Bumped chip and semiconductor flip-chip device applied from the same
US8736050B2 (en) 2009-09-03 2014-05-27 Taiwan Semiconductor Manufacturing Company, Ltd. Front side copper post joint structure for temporary bond in TSV application
US8592995B2 (en) * 2009-07-02 2013-11-26 Taiwan Semiconductor Manufacturing Company, Ltd. Method and structure for adhesion of intermetallic compound (IMC) on Cu pillar bump
US8659155B2 (en) 2009-11-05 2014-02-25 Taiwan Semiconductor Manufacturing Company, Ltd. Mechanisms for forming copper pillar bumps
US8492891B2 (en) * 2010-04-22 2013-07-23 Taiwan Semiconductor Manufacturing Company, Ltd. Cu pillar bump with electrolytic metal sidewall protection
US8546254B2 (en) 2010-08-19 2013-10-01 Taiwan Semiconductor Manufacturing Company, Ltd. Mechanisms for forming copper pillar bumps using patterned anodes
TW201227898A (en) 2010-12-24 2012-07-01 Unimicron Technology Corp Package substrate and fabrication method thereof
TWI440150B (en) 2011-05-20 2014-06-01 Chipbond Technology Corp Bumping process and structure thereof
CN102800599B (en) 2011-05-25 2015-03-25 颀邦科技股份有限公司 Projection process and structure thereof
JP6035714B2 (en) * 2011-08-17 2016-11-30 ソニー株式会社 SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICE
US9978656B2 (en) 2011-11-22 2018-05-22 Taiwan Semiconductor Manufacturing Company, Ltd. Mechanisms for forming fine-pitch copper bump structures
JP6076020B2 (en) 2012-02-29 2017-02-08 ルネサスエレクトロニクス株式会社 Semiconductor device and manufacturing method of semiconductor device
US9082764B2 (en) * 2012-03-05 2015-07-14 Corning Incorporated Three-dimensional integrated circuit which incorporates a glass interposer and method for fabricating the same
US9111817B2 (en) * 2012-09-18 2015-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Bump structure and method of forming same
TWI488244B (en) * 2014-07-25 2015-06-11 Chipbond Technology Corp Substrate with pillar structure and manufacturing method thereof
TWM490108U (en) * 2014-07-25 2014-11-11 Chipbond Technology Corp Substrate with bump structure

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