SG10202000545RA - Compositions and methods using same for deposition of silicon-containing films - Google Patents
Compositions and methods using same for deposition of silicon-containing filmsInfo
- Publication number
- SG10202000545RA SG10202000545RA SG10202000545RA SG10202000545RA SG10202000545RA SG 10202000545R A SG10202000545R A SG 10202000545RA SG 10202000545R A SG10202000545R A SG 10202000545RA SG 10202000545R A SG10202000545R A SG 10202000545RA SG 10202000545R A SG10202000545R A SG 10202000545RA
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- SG
- Singapore
- Prior art keywords
- deposition
- compositions
- silicon
- methods
- same
- Prior art date
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/345—Silicon nitride
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