SG10201608814YA - Semiconductor device and method for manufacturing the semiconductor device - Google Patents
Semiconductor device and method for manufacturing the semiconductor deviceInfo
- Publication number
- SG10201608814YA SG10201608814YA SG10201608814YA SG10201608814YA SG10201608814YA SG 10201608814Y A SG10201608814Y A SG 10201608814YA SG 10201608814Y A SG10201608814Y A SG 10201608814YA SG 10201608814Y A SG10201608814Y A SG 10201608814YA SG 10201608814Y A SG10201608814Y A SG 10201608814YA
- Authority
- SG
- Singapore
- Prior art keywords
- semiconductor device
- manufacturing
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
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- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Memories (AREA)
- Thin Film Transistor (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Led Devices (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2015213152 | 2015-10-29 |
Publications (1)
Publication Number | Publication Date |
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SG10201608814YA true SG10201608814YA (en) | 2017-05-30 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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SG10201608814YA SG10201608814YA (en) | 2015-10-29 | 2016-10-20 | Semiconductor device and method for manufacturing the semiconductor device |
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US9219164B2 (en) | 2012-04-20 | 2015-12-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with oxide semiconductor channel |
US9048323B2 (en) | 2012-04-30 | 2015-06-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9048265B2 (en) | 2012-05-31 | 2015-06-02 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device comprising oxide semiconductor layer |
US9059219B2 (en) | 2012-06-27 | 2015-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
US9742378B2 (en) * | 2012-06-29 | 2017-08-22 | Semiconductor Energy Laboratory Co., Ltd. | Pulse output circuit and semiconductor device |
US8736056B2 (en) * | 2012-07-31 | 2014-05-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Device for reducing contact resistance of a metal |
JP2014165404A (ja) | 2013-02-26 | 2014-09-08 | Toshiba Corp | 半導体装置及びその製造方法 |
KR102222344B1 (ko) | 2013-05-02 | 2021-03-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
US9214429B2 (en) * | 2013-12-05 | 2015-12-15 | Stmicroelectronics, Inc. | Trench interconnect having reduced fringe capacitance |
WO2015140656A1 (en) | 2014-03-18 | 2015-09-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
KR102400212B1 (ko) | 2014-03-28 | 2022-05-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 트랜지스터 및 반도체 장치 |
DE112015001878B4 (de) * | 2014-04-18 | 2021-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Halbleitervorrichtung und elektronisches Gerät |
US9831238B2 (en) * | 2014-05-30 | 2017-11-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including insulating film having opening portion and conductive film in the opening portion |
DE112014006711B4 (de) * | 2014-05-30 | 2021-01-21 | Semiconductor Energy Laboratory Co., Ltd. | Halbleitervorrichtung, Herstellungsverfahren dafür und elektronische Vorrichtung |
TWI663733B (zh) | 2014-06-18 | 2019-06-21 | 日商半導體能源研究所股份有限公司 | 電晶體及半導體裝置 |
US9954112B2 (en) | 2015-01-26 | 2018-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9660100B2 (en) | 2015-02-06 | 2017-05-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
-
2016
- 2016-10-20 SG SG10201608814YA patent/SG10201608814YA/en unknown
- 2016-10-24 US US15/332,006 patent/US9922994B2/en not_active Expired - Fee Related
- 2016-10-25 JP JP2016208285A patent/JP2017085099A/ja not_active Withdrawn
- 2016-10-27 TW TW105134855A patent/TWI685878B/zh active
- 2016-10-27 TW TW109102595A patent/TWI811521B/zh active
- 2016-10-28 KR KR1020160141674A patent/KR20170051322A/ko not_active Application Discontinuation
-
2018
- 2018-01-12 US US15/870,182 patent/US20180138213A1/en not_active Abandoned
-
2019
- 2019-02-20 US US16/280,792 patent/US10665613B2/en active Active
-
2020
- 2020-05-14 US US15/931,660 patent/US11101293B2/en active Active
-
2021
- 2021-05-21 JP JP2021086014A patent/JP2021132229A/ja not_active Withdrawn
- 2021-05-25 US US17/329,250 patent/US11776966B2/en active Active
-
2023
- 2023-02-16 JP JP2023022087A patent/JP2023065473A/ja not_active Withdrawn
Also Published As
Publication number | Publication date |
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US20180138213A1 (en) | 2018-05-17 |
US20170125450A1 (en) | 2017-05-04 |
US11101293B2 (en) | 2021-08-24 |
JP2023065473A (ja) | 2023-05-12 |
US9922994B2 (en) | 2018-03-20 |
US20190189643A1 (en) | 2019-06-20 |
US11776966B2 (en) | 2023-10-03 |
US20200273889A1 (en) | 2020-08-27 |
JP2017085099A (ja) | 2017-05-18 |
US20210288077A1 (en) | 2021-09-16 |
JP2021132229A (ja) | 2021-09-09 |
TW202038302A (zh) | 2020-10-16 |
TWI811521B (zh) | 2023-08-11 |
KR20170051322A (ko) | 2017-05-11 |
TW201727700A (zh) | 2017-08-01 |
US10665613B2 (en) | 2020-05-26 |
TWI685878B (zh) | 2020-02-21 |
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