CN100505265C - 半导体装置、半导体装置的制造方法 - Google Patents
半导体装置、半导体装置的制造方法 Download PDFInfo
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- CN100505265C CN100505265C CNB2003801106287A CN200380110628A CN100505265C CN 100505265 C CN100505265 C CN 100505265C CN B2003801106287 A CNB2003801106287 A CN B2003801106287A CN 200380110628 A CN200380110628 A CN 200380110628A CN 100505265 C CN100505265 C CN 100505265C
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 75
- 238000000034 method Methods 0.000 title claims description 101
- 238000004519 manufacturing process Methods 0.000 title claims description 47
- 239000010410 layer Substances 0.000 claims abstract description 208
- 238000009792 diffusion process Methods 0.000 claims abstract description 128
- 239000001257 hydrogen Substances 0.000 claims abstract description 121
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 121
- 239000011229 interlayer Substances 0.000 claims abstract description 90
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 230000004888 barrier function Effects 0.000 claims description 62
- 230000015572 biosynthetic process Effects 0.000 claims description 38
- 150000004767 nitrides Chemical class 0.000 claims description 15
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 9
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 9
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 4
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 12
- 150000002431 hydrogen Chemical class 0.000 abstract description 72
- 238000005530 etching Methods 0.000 abstract description 52
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 37
- 239000003990 capacitor Substances 0.000 abstract description 28
- 230000006866 deterioration Effects 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 35
- 238000005406 washing Methods 0.000 description 34
- 230000032683 aging Effects 0.000 description 31
- 230000008569 process Effects 0.000 description 19
- 239000000463 material Substances 0.000 description 18
- 238000000137 annealing Methods 0.000 description 16
- 238000005229 chemical vapour deposition Methods 0.000 description 14
- 239000002245 particle Substances 0.000 description 13
- 239000000203 mixture Substances 0.000 description 11
- 238000009832 plasma treatment Methods 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 10
- 239000007789 gas Substances 0.000 description 9
- 238000012797 qualification Methods 0.000 description 9
- 239000000443 aerosol Substances 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 239000012535 impurity Substances 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 230000006870 function Effects 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 238000001259 photo etching Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 239000013256 coordination polymer Substances 0.000 description 3
- 230000009977 dual effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000009931 harmful effect Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- -1 Pr can be adopted Chemical class 0.000 description 1
- 229910002842 PtOx Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000003679 aging effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- VRIVJOXICYMTAG-IYEMJOQQSA-L iron(ii) gluconate Chemical compound [Fe+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O VRIVJOXICYMTAG-IYEMJOQQSA-L 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000013517 stratification Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
- H01L28/57—Capacitors with a dielectric comprising a perovskite structure material comprising a barrier layer to prevent diffusion of hydrogen or oxygen
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (11)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2003/016986 WO2005067051A1 (ja) | 2003-12-26 | 2003-12-26 | 半導体装置、半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1860608A CN1860608A (zh) | 2006-11-08 |
CN100505265C true CN100505265C (zh) | 2009-06-24 |
Family
ID=34746774
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2003801106287A Expired - Fee Related CN100505265C (zh) | 2003-12-26 | 2003-12-26 | 半导体装置、半导体装置的制造方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US20060261387A1 (zh) |
JP (1) | JP4610486B2 (zh) |
CN (1) | CN100505265C (zh) |
WO (1) | WO2005067051A1 (zh) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7265403B2 (en) * | 2004-03-30 | 2007-09-04 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device |
CN100466260C (zh) * | 2004-04-14 | 2009-03-04 | 富士通微电子株式会社 | 半导体装置及其制造方法 |
JP2008198885A (ja) * | 2007-02-15 | 2008-08-28 | Fujitsu Ltd | 半導体装置およびその製造方法 |
CN101617399B (zh) * | 2007-02-27 | 2011-05-18 | 富士通半导体股份有限公司 | 半导体存储器件及其制造、测试方法、封装树脂形成方法 |
JP5280716B2 (ja) * | 2007-06-11 | 2013-09-04 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
US8445913B2 (en) * | 2007-10-30 | 2013-05-21 | Spansion Llc | Metal-insulator-metal (MIM) device and method of formation thereof |
JP2009182181A (ja) * | 2008-01-31 | 2009-08-13 | Toshiba Corp | 半導体装置 |
JP4792097B2 (ja) * | 2009-03-25 | 2011-10-12 | 株式会社東芝 | 不揮発性記憶装置及びその製造方法 |
KR101854197B1 (ko) * | 2011-05-12 | 2018-06-21 | 삼성디스플레이 주식회사 | 표시 기판 및 이의 제조 방법 |
US9349689B2 (en) * | 2012-04-20 | 2016-05-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor devices including conductive features with capping layers and methods of forming the same |
US9006808B2 (en) | 2013-09-09 | 2015-04-14 | Cypress Semiconductor Corporation | Eliminating shorting between ferroelectric capacitors and metal contacts during ferroelectric random access memory fabrication |
CN106558620B (zh) * | 2015-09-29 | 2021-09-07 | 联华电子股份有限公司 | 半导体元件及其形成方法 |
SG10201608814YA (en) | 2015-10-29 | 2017-05-30 | Semiconductor Energy Lab Co Ltd | Semiconductor device and method for manufacturing the semiconductor device |
JP6853663B2 (ja) * | 2015-12-28 | 2021-03-31 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US11075113B2 (en) * | 2018-06-29 | 2021-07-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Metal capping layer and methods thereof |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3417167B2 (ja) * | 1995-09-29 | 2003-06-16 | ソニー株式会社 | 半導体メモリ素子のキャパシタ構造及びその形成方法 |
JP2917916B2 (ja) * | 1996-06-12 | 1999-07-12 | 日本電気株式会社 | 強誘電体を用いた半導体集積回路とその製造方法 |
US6071810A (en) * | 1996-12-24 | 2000-06-06 | Kabushiki Kaisha Toshiba | Method of filling contact holes and wiring grooves of a semiconductor device |
JP2000133633A (ja) * | 1998-09-09 | 2000-05-12 | Texas Instr Inc <Ti> | ハ―ドマスクおよびプラズマ活性化エッチャントを使用した材料のエッチング方法 |
JP2002280528A (ja) * | 1999-05-14 | 2002-09-27 | Toshiba Corp | 半導体装置及びその製造方法 |
US6485988B2 (en) * | 1999-12-22 | 2002-11-26 | Texas Instruments Incorporated | Hydrogen-free contact etch for ferroelectric capacitor formation |
US6576546B2 (en) * | 1999-12-22 | 2003-06-10 | Texas Instruments Incorporated | Method of enhancing adhesion of a conductive barrier layer to an underlying conductive plug and contact for ferroelectric applications |
JP2002176149A (ja) * | 2000-09-28 | 2002-06-21 | Sharp Corp | 半導体記憶素子およびその製造方法 |
US6734477B2 (en) * | 2001-08-08 | 2004-05-11 | Agilent Technologies, Inc. | Fabricating an embedded ferroelectric memory cell |
US6709875B2 (en) * | 2001-08-08 | 2004-03-23 | Agilent Technologies, Inc. | Contamination control for embedded ferroelectric device fabrication processes |
JP2003115576A (ja) * | 2001-10-03 | 2003-04-18 | Matsushita Electric Ind Co Ltd | 電子デバイスの製造方法 |
US6828161B2 (en) * | 2001-12-31 | 2004-12-07 | Texas Instruments Incorporated | Method of forming an FeRAM having a multi-layer hard mask and patterning thereof |
US20030143853A1 (en) * | 2002-01-31 | 2003-07-31 | Celii Francis G. | FeRAM capacitor stack etch |
US6713310B2 (en) * | 2002-03-08 | 2004-03-30 | Samsung Electronics Co., Ltd. | Ferroelectric memory device using via etch-stop layer and method for manufacturing the same |
JP4090766B2 (ja) * | 2002-03-19 | 2008-05-28 | 富士通株式会社 | 半導体装置の製造方法 |
JP4011391B2 (ja) * | 2002-05-01 | 2007-11-21 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
JP3847683B2 (ja) * | 2002-08-28 | 2006-11-22 | 富士通株式会社 | 半導体装置の製造方法 |
JP2004349474A (ja) * | 2003-05-22 | 2004-12-09 | Toshiba Corp | 半導体装置とその製造方法 |
US7425512B2 (en) * | 2003-11-25 | 2008-09-16 | Texas Instruments Incorporated | Method for etching a substrate and a device formed using the method |
-
2003
- 2003-12-26 CN CNB2003801106287A patent/CN100505265C/zh not_active Expired - Fee Related
- 2003-12-26 WO PCT/JP2003/016986 patent/WO2005067051A1/ja active Application Filing
- 2003-12-26 JP JP2005513102A patent/JP4610486B2/ja not_active Expired - Fee Related
-
2006
- 2006-04-25 US US11/410,322 patent/US20060261387A1/en not_active Abandoned
-
2010
- 2010-06-22 US US12/821,080 patent/US20100261296A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
JPWO2005067051A1 (ja) | 2007-07-26 |
CN1860608A (zh) | 2006-11-08 |
US20060261387A1 (en) | 2006-11-23 |
WO2005067051A1 (ja) | 2005-07-21 |
US20100261296A1 (en) | 2010-10-14 |
JP4610486B2 (ja) | 2011-01-12 |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: FUJITSU MICROELECTRONICS CO., LTD. Free format text: FORMER OWNER: FUJITSU LIMITED Effective date: 20081107 |
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C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20081107 Address after: Tokyo, Japan Applicant after: FUJITSU MICROELECTRONICS Ltd. Address before: Kanagawa Applicant before: Fujitsu Ltd. |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: FUJITSU SEMICONDUCTOR CO., LTD. Free format text: FORMER NAME: FUJITSU MICROELECTRON CO., LTD. |
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CP01 | Change in the name or title of a patent holder |
Address after: Japan's Kanagawa Prefecture Yokohama Patentee after: FUJITSU MICROELECTRONICS Ltd. Address before: Japan's Kanagawa Prefecture Yokohama Patentee before: Fujitsu Microelectronics Ltd. |
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CP02 | Change in the address of a patent holder |
Address after: Japan's Kanagawa Prefecture Yokohama Patentee after: FUJITSU MICROELECTRONICS Ltd. Address before: Tokyo, Japan Patentee before: Fujitsu Microelectronics Ltd. |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090624 Termination date: 20191226 |
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CF01 | Termination of patent right due to non-payment of annual fee |