RU2290721C2 - Кремниевый фотоэлектронный умножитель (варианты) и ячейка для кремниевого фотоэлектронного умножителя - Google Patents

Кремниевый фотоэлектронный умножитель (варианты) и ячейка для кремниевого фотоэлектронного умножителя Download PDF

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Publication number
RU2290721C2
RU2290721C2 RU2004113616/28A RU2004113616A RU2290721C2 RU 2290721 C2 RU2290721 C2 RU 2290721C2 RU 2004113616/28 A RU2004113616/28 A RU 2004113616/28A RU 2004113616 A RU2004113616 A RU 2004113616A RU 2290721 C2 RU2290721 C2 RU 2290721C2
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Russia
Prior art keywords
layer
silicon
type
locations
concentration
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RU2004113616/28A
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English (en)
Russian (ru)
Inventor
Борис Анатольевич Долгошеин (RU)
Борис Анатольевич Долгошеин
Елена Викторовна Попова (RU)
Елена Викторовна Попова
Сергей Николаевич Клемин (RU)
Сергей Николаевич Клемин
Леонид Анатольевич Филатов (RU)
Леонид Анатольевич Филатов
Original Assignee
Борис Анатольевич Долгошеин
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Priority to RU2004113616/28A priority Critical patent/RU2290721C2/ru
Application filed by Борис Анатольевич Долгошеин filed Critical Борис Анатольевич Долгошеин
Priority to DE602005018200T priority patent/DE602005018200D1/de
Priority to EP09013750.6A priority patent/EP2144287B1/en
Priority to PCT/RU2005/000242 priority patent/WO2005106971A1/ru
Priority to KR1020067025572A priority patent/KR101113364B1/ko
Priority to CN2005800192481A priority patent/CN1998091B/zh
Priority to US11/568,646 priority patent/US7759623B2/en
Priority to EP05749398A priority patent/EP1755171B8/ru
Priority to AT05749398T priority patent/ATE451720T1/de
Priority to JP2007511306A priority patent/JP2007536703A/ja
Application granted granted Critical
Publication of RU2290721C2 publication Critical patent/RU2290721C2/ru

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Light Receiving Elements (AREA)
  • Nitrogen And Oxygen Or Sulfur-Condensed Heterocyclic Ring Systems (AREA)
  • Investigating Or Analysing Materials By The Use Of Chemical Reactions (AREA)
  • Measurement Of The Respiration, Hearing Ability, Form, And Blood Characteristics Of Living Organisms (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
RU2004113616/28A 2004-05-05 2004-05-05 Кремниевый фотоэлектронный умножитель (варианты) и ячейка для кремниевого фотоэлектронного умножителя RU2290721C2 (ru)

Priority Applications (10)

Application Number Priority Date Filing Date Title
RU2004113616/28A RU2290721C2 (ru) 2004-05-05 2004-05-05 Кремниевый фотоэлектронный умножитель (варианты) и ячейка для кремниевого фотоэлектронного умножителя
EP09013750.6A EP2144287B1 (en) 2004-05-05 2005-05-05 Silicon avalanche photodetector array with graded doping concentration
PCT/RU2005/000242 WO2005106971A1 (en) 2004-05-05 2005-05-05 Silicon photomultiplier (variants) and a cell therefor
KR1020067025572A KR101113364B1 (ko) 2004-05-05 2005-05-05 실리콘 광전자 증배관 및 상기 실리콘 광전자 증배관을위한 셀
DE602005018200T DE602005018200D1 (de) 2004-05-05 2005-05-05 Silizium-Photovervielfacher mit Zellenmatrix
CN2005800192481A CN1998091B (zh) 2004-05-05 2005-05-05 硅光电倍增器及硅光电倍增器单元
US11/568,646 US7759623B2 (en) 2004-05-05 2005-05-05 Silicon photoelectric multiplier (variants) and a cell for silicon photoelectric multiplier
EP05749398A EP1755171B8 (de) 2004-05-05 2005-05-05 Silizium-Photovervielfacher mit Zellenmatrix
AT05749398T ATE451720T1 (de) 2004-05-05 2005-05-05 Silizium-photovervielfacher mit zellenmatrix
JP2007511306A JP2007536703A (ja) 2004-05-05 2005-05-05 シリコン光電子増倍管（改良型）及びシリコン光電子増倍管用セル

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
RU2004113616/28A RU2290721C2 (ru) 2004-05-05 2004-05-05 Кремниевый фотоэлектронный умножитель (варианты) и ячейка для кремниевого фотоэлектронного умножителя

Publications (1)

Publication Number Publication Date
RU2290721C2 true RU2290721C2 (ru) 2006-12-27

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RU2004113616/28A RU2290721C2 (ru) 2004-05-05 2004-05-05 Кремниевый фотоэлектронный умножитель (варианты) и ячейка для кремниевого фотоэлектронного умножителя

Country Status (9)

Country Link
US (1) US7759623B2 (enExample)
EP (2) EP1755171B8 (enExample)
JP (1) JP2007536703A (enExample)
KR (1) KR101113364B1 (enExample)
CN (1) CN1998091B (enExample)
AT (1) ATE451720T1 (enExample)
DE (1) DE602005018200D1 (enExample)
RU (1) RU2290721C2 (enExample)
WO (1) WO2005106971A1 (enExample)

Cited By (4)

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RU2386192C1 (ru) * 2008-08-20 2010-04-10 Александр Иванович Патрашин Многокаскадный лавинный фотодетектор
DE112009004341T5 (de) 2009-01-11 2012-06-21 Sergey Nikolaevich Klemin Halbleiter-Geigermodus-Mikrozellenphotodiode (Varianten)
RU2770147C1 (ru) * 2021-06-21 2022-04-14 Садыгов Зираддин Ягуб оглы Микропиксельный лавинный фотодиод
RU217698U1 (ru) * 2022-12-26 2023-04-12 Общество с Ограниченной Ответственностью "Марафон" (ООО "Марафон") Многоканальный источник напряжения для питания кремниевых фотоэлектронных детекторов на основе лавинных диодов

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US20080012087A1 (en) * 2006-04-19 2008-01-17 Henri Dautet Bonded wafer avalanche photodiode and method for manufacturing same
TWI523209B (zh) 2006-07-03 2016-02-21 濱松赫德尼古斯股份有限公司 光二極體陣列
EP2047297B1 (en) * 2006-07-21 2017-07-05 Koninklijke Philips N.V. Method and system for improved tof pet reconstruction
US7652257B2 (en) * 2007-06-15 2010-01-26 General Electric Company Structure of a solid state photomultiplier
DE102007037020B3 (de) * 2007-08-06 2008-08-21 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Avalanche-Photodiode
WO2009019660A2 (en) * 2007-08-08 2009-02-12 Koninklijke Philips Electronics N.V. Silicon photomultiplier trigger network
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KR100987057B1 (ko) * 2008-06-12 2010-10-11 한국과학기술원 광검출 효율이 향상된 실리콘 광전자 증배관 및 이를포함하는 감마선 검출기
DE102009017505B4 (de) 2008-11-21 2014-07-10 Ketek Gmbh Strahlungsdetektor, Verwendung eines Strahlungsdetektors und Verfahren zur Herstellung eines Strahlungsdetektors
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KR101148335B1 (ko) * 2009-07-23 2012-05-21 삼성전기주식회사 실리콘 반도체를 이용한 광전자 증배관 및 그 구조 셀
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KR101084940B1 (ko) * 2009-09-28 2011-11-17 삼성전기주식회사 실리콘 광전자 증배관
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KR101711087B1 (ko) 2010-12-07 2017-02-28 한국전자통신연구원 실리콘 포토멀티플라이어 및 그 제조 방법
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ATE451720T1 (de) 2009-12-15
EP2144287A1 (en) 2010-01-13
CN1998091B (zh) 2010-09-29
US7759623B2 (en) 2010-07-20
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CN1998091A (zh) 2007-07-11

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