CN1998091B - 硅光电倍增器及硅光电倍增器单元 - Google Patents

硅光电倍增器及硅光电倍增器单元 Download PDF

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CN1998091B
CN1998091B CN2005800192481A CN200580019248A CN1998091B CN 1998091 B CN1998091 B CN 1998091B CN 2005800192481 A CN2005800192481 A CN 2005800192481A CN 200580019248 A CN200580019248 A CN 200580019248A CN 1998091 B CN1998091 B CN 1998091B
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艾莲娜·V·波波娃
谢尔盖·N·克莱曼
列昂尼德·A·菲拉托夫
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Max Planck Gesellschaft zur Foerderung der Wissenschaften eV
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Abstract

本发明涉及高效率光发射检测的监测器，并可用于核技术和激光技术，以及用于工业和医学断层摄影术等。硅光电倍增器(实施例1)包括：掺杂剂浓度为1018-1020cm-3的P++导电型基片，并由多个单元构成，每个单元包含掺杂剂浓度在1018-1014cm-3范围内逐渐变化的p导电型外延层，所述外延层生长在基片上；掺杂剂浓度为1015-1017cm-3的p导电型层；掺杂剂浓度为1018-1020cm-3的n+导电型层；多晶硅电阻是在每个单元的二氧化硅层上，所述多晶硅电阻连接n+导电型层与电压分布母线，和分隔元件设置在各个单元之间。硅光电倍增器(实施例2)包括：n-导电型基片；掺杂剂浓度为1018-1020cm-3的P++导电型层，所述导电型层加到基片上，所述倍增器是由多个单元构成，多晶硅电阻是在每个单元的二氧化硅层上，和分隔元件设置在各个单元之间。

Description

硅光电倍增器及硅光电倍增器单元
技术领域
本发明涉及半导体器件领域，尤其涉及高效率光发射检测的检测器，该光发射包括可见光谱部分，本发明可用于核技术和激光技术，以及用于工业和医学断层摄影术等。
背景技术
单光子检测的装置是众所周知的[”Avalanche photodiodes andquenching circuits for single-photon detection”，S.Cova，M.Ghioni，A.Lacaita，C.Samori and F.Zappa，APPLIED OPTICS，Vol.35 No.12，20 April 1996]，已知的装置包括：硅基片，和在该基片上制作的外延层，所述外延层在表面上有一个导电型的小(10-200微米)区域(单元)，该导电型是与给定层导电型相反。给这个单元提供大于击穿电压的反向偏置。当这个区域中的光子被吸收时，就发生Geiger放电，所述放电是受外部衰减电阻的限制。这种单光子检测器有高的光检测效率，然而，它有非常小的灵敏区，而且，它不能测量光通量强度。为了消除这些缺陷，需要使用位于共同基片上的大量(≥103)这种单元，该单元是≥1mm2的正方形。在这种情况下，每个单元的工作如同以上描述的光子检测器，该装置的整体检测与工作单元数目成正比的光强。
在1997年7月27日出版的RU 2086047 C1中描述的装置可以作为最新现有技术的硅光电倍增器。已知装置包括硅基片，多个单元，其尺寸为20-40微米并位于所述基片表面上的外延层中。一种特殊材料层用作衰减电阻器，这种装置的缺陷是如下所述：
·由于光在电阻层中被吸收，它可以降低短波光检测效率；
·由于灵敏区的很小深度，它没有足够高的长波光检测效率；
·相邻单元之间光连接可能导致这样的情况，当一个单元工作时，二次光子出现在Geiger放电中，所述光子可以起动相邻单元的激励(发光)。由于这种光子的数目是与放大系数成正比，这个现象限制该装置的放大系数，效率，和单电子分辨率。此外，光学连接产生多余的噪声因素，它使理想的泊松统计特征和记录少量光子的能力退化。
·电阻层涂敷的技术复杂性。
由于增大的单元灵敏度，该技术效应可以提高宽带波长的光检测效率，其放大系数高达107，可以实现高的单电子分辨率，和抑制多余的噪声因素。
制作在薄外延层上单个单元结构(尺寸约为20微米)在约1微米深的耗尽层中提供均匀的电场，这在最新现有技术的硅光电倍增器单元中是可接受的。该单元结构提供低的工作电压(M.Ghioni，S.Cova，C.Samori，G.Ripamonti“New epitaxial diode forsingle-photon timing at room temperature”，Electronics Letters，24，No.24(1998)1476)。已知单元的缺陷是没有足够高的光谱长波部分(≥450微米)的检测效率。
由于增大的单元灵敏度，该技术效应可以提高宽带波长的检测效率，实现高的单电子分辨率。
发明内容
研究两个实施例的硅光电倍增器和硅光电倍增器单元的结构。
我们得到的技术效应(第一个实施例)是借助于一种硅光电倍增器，包括：掺杂剂浓度为1018-1020cm-3的p++导电型基片，该倍增器是由互相独立的相同单元构成，每个单元包含生长在基片上的p导电型外延层，所述外延层的掺杂剂浓度是在1018-1014cm-3的范围内逐渐变化；掺杂剂浓度为1015-1017cm-3的p导电型层；掺杂剂浓度为1018-1020cm-3的n+导电型层，所述n+导电型层形成p-n边界的施主部分，多晶硅电阻是在每个单元的二氧化硅层上，所述多晶硅电阻连接n+导电型层与电压分布母线，和分隔单元设置在各个单元之间。
我们得到的技术效应(第二个实施例)是借助于一种硅光电倍增器，包括：n导电型基片；掺杂剂浓度为1018-1020cm-3的P++导电型层，所述导电型层加在所述n导电型基片上，所述倍增器是由互相独立的相同单元构成，每个单元包含掺杂剂浓度是在1018-1014cm-3范围内逐渐变化的p导电型外延层，所述p导电型外延层生长在P++导电型层上；掺杂剂浓度为1015-1017cm-3的p导电型层；掺杂剂浓度为1018-1020cm-3的n+导电型层，多晶硅电阻是在每个单元的二氧化硅层上，所述多晶硅电阻连接n+导电型层与电压分布母线，和分隔元件设置在各个单元之间。
在第二个实施例中，使用n导电型基片(它代替在第一个实施例装置中使用的基片1)，所述基片与各个单元的p导电型层一起形成反向n-p边界。
附图说明
图1表示按照本发明硅光电倍增器单元的结构。
图2表示第一个实施例的硅光电倍增器。
图3表示第二个实施例的硅光电倍增器。
图4表示按照本发明的硅光电倍增器单元结构(相反实施例)
图5表示第一个实施例的硅光电倍增器(相反实施例)。
图6表示第二个实施例的硅光电倍增器(相反实施例)。
具体实施方式
第一个实施例的硅光电倍增器包括：p++导电型基片1，生长在基片1上的外延层2(EPI)，p导电型层3，n+导电型层4，连接导电型层4与电压分布母线6的多晶硅电阻5，二氧化硅层7，分隔元件10。除了以上指出的元件和连接以外，第二个实施例的硅光电倍增器还包括：p++导电型层8和n导电型基片9(代替p++导电型基片1)。
硅光电倍增器单元包括：掺杂剂浓度是在1018-1014cm-3范围内逐渐变化的p导电型外延层2；掺杂剂浓度为1015-1017cm-3的p导电型层3；形成p-n边界施主部分的n+层，其掺杂剂浓度是在1018-1020cm-3范围内，多晶硅电阻5是在每个单元的二氧化硅层7上，二氧化硅层7是在外延层的光敏表面上，所述电阻5连接n+层4与电压分布母线6。
由于在外延层中特别形成的掺杂剂分布梯度轮廓建立的内置电场，在这种结构中可以实现宽光谱(300-900nm)的高效率光检测，以及低的工作电压和高度均匀的电场。
在从光电倍增器的基片到光敏表面的方向上，抑制外延层中的掺杂剂浓度，所述光敏表面是远离基片的外延层表面(外延层的光敏表面)。二氧化硅层7加到硅光电倍增器的光敏表面上，即，外延层的光敏表面上。连接n+层4与电压分布母线6的多晶硅电阻5是在每个单元的二氧化硅层7上。具体执行光阻挡功能的分隔元件10设置在各个单元之间。
外延层(第二个实施例的硅光电倍增器)生长在p++导电型层8上，导电型层8是在导电型基片9上(掺杂剂浓度为1015-1017cm-3)。在p导电型层3与基片9之间制作第二个(相反)n-p边界，所述边界可以防止Geiger放电中二次光子产生的光电子穿透进入相邻单元的灵敏区。此外，通过非均匀蚀刻有取向<100>的硅，由于在各个单元(例如，它们可以是三角形(V型槽))之间充满分隔元件(光阻挡层)，可以防止二次Geiger光子穿透进入相邻单元。
硅光电倍增器包括尺寸约为20-100微米的独立单元。所有的单元是与铝母线连接，大于击穿电压的相同偏置电压加到各个单元上，从而可以工作在Geiger模式。当光子到达时，猝熄的Geiger放电是在单元的激活区中发展。由于在每个单元中有多晶硅电阻5(限流电阻)，当p-n边界上的电压下降时，电荷载流子数目的起伏高达零，就发生猝熄现象，即，停止放电。来自工作单元的电流信号集中到共同的负载上。每个单元的放大倍数可以达到107。放大值的扩展定义为单元容量和单元击穿电压的技术扩展，它的数值小于5％。因为所有的单元是相同的，检测器对轻微闪光的响应是与工作单元的数目成正比，即，它与光强成正比。工作在Geiger模式下的一个特征是单元放大倍数与偏置电压的线性关系，它可以降低对功率源电压稳定性和热稳定性的要求。
给共同母线6(阳极)提供正电压，它的数值应当提供Geiger模式(典型的数值是在U＝+20-60V的范围内)，还提供等于1-2微米的耗尽层深度。在吸收光量子时，产生的电荷载流子聚集不仅来自耗尽区，而且还来自未耗尽瞬时区，其中内置电场是由于掺杂剂的梯度，所述电场迫使电子移动到阳极。因此，实现电荷聚集的更大深度，该深度远远超过低工作电压下限定的耗尽区深度。在固定的单元布局和固定的工作电压下，它提供最大的光检测效率。
多晶硅电阻5数值的选取是根据足以消除雪崩放电的条件。该电阻的制造技术是简单的。重要的特征是，电阻加在单元的周边，不能遮挡激活部分，即，不能降低光检测效率。
为了阻挡各个单元之间的连接，分隔元件设置在各个单元之间的硅光电倍增器结构中，例如，分隔元件是三角形(例如，在KOH基的液体蚀刻中，非均匀蚀刻有取向<100>的硅)。
我们允许在p-n边界和n-p边界上的过程是按照完全相同的方式进行(允许相反符号的电荷载流子)，在相反实施例中实现申请的装置(有确定导电型的各层改变成相反的类型)，如图4-6所示，它们的工作是按照类似方式实现的，如同在本发明说明书和权利要求书中所描述的。因此，相反实施例的申请装置特征等同于本发明说明书和权利要求书中所描述的特征。

Claims (10)

1.一种硅基光电倍增器，包括：
第一导电型基片(1)，
多个单元，该单元安排在基片(1)之上，并且每个单元包括：
第一导电型外延层(2)，形成在基片(1)上，并具有掺杂浓度的空间梯度，
形成在外延层(2)上的第一导电型第一结层(3)，
形成在第一结层(3)上的第二导电型第二结层(4)，
形成在第二结层(4)上的绝缘层(7)，和
形成在绝缘层(7)上并电路耦合到第二结层(4)的电阻层(5)。
2.一种硅基光电倍增器，包括：
第二导电型基片(9)，
形成在基片(9)上的第一导电型掺杂层(8)，
多个单元，该单元安排在掺杂层(8)之上，并且每个单元包括：
第一导电型外延层(2)，形成在掺杂层(8)上，并具有掺杂浓度的空间梯度，
形成在外延层(2)上的第一导电型第一结层(3)，
形成在第一结层(3)上的第二导电型第二结层(4)，
形成在第二结层(4)上的绝缘层(7)，和
形成在绝缘层(7)上并电路耦合到第二结层(4)的电阻层(5)。
3.一种硅基光电倍增器单元，包括：
具有掺杂浓度的空间梯度的第一导电型外延层(2)，
形成在外延层(2)上的第一导电型第一结层(3)，
形成在第一结层(3)上的第二导电型第二结层(4)，
形成在第二结层(4)上的绝缘层(7)，和
形成在绝缘层(7)上并电路耦合到第二结层(4)的电阻层(5)。
4.按照权利要求1或2的硅基光电倍增器，其中：
权利要求1所述的基片(1)或权利要求2的掺杂层(8)包括1018-1020cm-3范围内的掺杂级。
5.按照权利要求1或2的硅基光电倍增器或按照权利要求3的硅基光电倍增器单元，其中：
外延层(2)的掺杂浓度在1014-1018cm-3的范围内逐渐变化。
6.按照权利要求1或2的硅基光电倍增器或按照权利要求3的硅基光电倍增器单元，其中：
第一结层(3)的掺杂浓度是在1015-1017cm-3的范围内。
7.按照权利要求1或2的硅基光电倍增器或按照权利要求3的硅基光电倍增器单元，其中：
绝缘层(7)包括氧化层。
8.按照权利要求1或2的硅基光电倍增器或按照权利要求3的硅基光电倍增器单元，其中：
绝缘层(7)包括二氧化硅层。
9.按照权利要求1或2的硅基光电倍增器或按照权利要求3的硅基光电倍增器单元，其中：
电阻层(5)的材料包括多晶硅。
10.按照权利要求1或2的硅基光电倍增器，其中：
分隔元件(10)设置在各个单元之间，分隔元件(10)是由进入到作为外延层(2)的硅中的凹坑构成，并且利用非均匀蚀刻硅得到的三角形V型槽形成所述凹坑。
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