CN100349304C - 硅光接收器件 - Google Patents
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Abstract
提供一种硅光接收器件。在该器件中，一衬底基于n型或p型硅；通过使用与衬底的掺杂剂类型相反类型的掺杂剂，使一掺杂区在衬底的一面上被极浅地掺杂，从而使对于波长在100至1100nm的光的光电转换效应由衬底p-n结中的量子局限效应产生。第一和第二电极形成在衬底上以便在电学上连接到掺杂区。由于在硅衬底上的极浅掺杂区，量子局限效应产生于p-n结中。由于量子局限效应，即使硅被用作半导体材料，该硅光接收器件的量子效率也远高于常规太阳能电池的量子效率。该硅光接收器件还可被形成为能够吸收特定或大的波长谱带的光，并可被用作太阳能电池。
Description
技术领域
本发明涉及一种硅光接收器件的领域，更具体而言，涉及一种由于量子局限效应具有高量子效率(quantum efficiency)的硅光接收器件。
背景技术
图1是作为硅光接收器件实例的太阳能电池的示意图。参照图1，一普通太阳能电池具有p-n二极管结构，其中一n型半导体1和一p型半导体2被连接起来以获得和利用使光能转换成电能的光生伏特效应(photovoltaiceffect)。用于将外部电路连接到n和p型半导体1和2的电极3和4分别形成在p型半导体2的上表面上和n型半导体1的下表面上。
参照图2，当光入射到图1所示p-n二极管结构并且一光子被吸收到其中时，在p-n结两侧将产生由一电子7a和一空穴7b组成的一对电子空穴。此时，电子7a向n型半导体1移动而空穴7b沿相反方向移动。因此，当作为外部电路的负载电阻5被连接到该p-n二极管结构时，根据光能被转换为电能，电流I将流过p-n二极管结构。
典型地，硅被用作上述太阳能电池的半导体材料。具有使用硅半导体的二极管结构的该太阳能电池，在将光能转换成电能时提供的效率较低。理论上，单晶硅具有约23％的光电转换效率，多晶硅具有约18％的光电转换效率，而非晶硅具有约14％的光电转换效率。在使用上述硅的类型之一作为半导体材料的太阳能电池的实际工作中，光电转换效率下降的更多。
发明内容
为解决上述问题，本发明的一个目的在于提供一种硅光接收器件，由于在p-n结处产生的量子局限效应，即使使用硅作为半导体材料，该器件也提供比常规太阳能电池高的多的量子效率。
为达到此目的，本发明提供一种硅光接收器件，包括：一衬底，一掺杂区以及第一和第二电极。该衬底基于n型或p型硅。通过使用与衬底的掺杂剂类型相反类型的掺杂剂，该掺杂区在衬底的一面上被掺杂为具有极浅的深度。因此，对于波长在100至1100nm的光的光电转换效应将会由该衬底和掺杂区之间的边界上的衬底p-n结中的量子局限效应产生。第一和第二电极在衬底上形成以便在电学上连接到掺杂区。
优选地，形成多种尺寸的微腔(micro-cavity)从而使硅光接收器件可被用作吸收100至1100nm多种波长光的太阳能电池。
同样优选地，该硅光接收器件还包括一在衬底的一面上形成的控制薄膜。该控制薄膜用作掺杂区形成时的掩模并有助于将掺杂区形成为具有极浅的深度。
控制薄膜可由氧化硅SiO2形成为适当的厚度从而使掺杂区能够被形成为具有极浅的深度。
优选地，掺杂区可通过掺杂剂的非平衡扩散形成。该掺杂剂可以是硼或磷之一。
同样优选地，在内部均产生电子空穴对的量子井、量子点和量子线中至少其一，被形成在衬底与掺杂区的p-n结处。
优选地，通过施加外部电压，使量子井，量子点和量子线中至少其一内部的子带能级(sub-band energy level)发生变化，从而使吸收光波长谱带发生变化。
衬底可由Si，SiC和金刚石之一形成。
附图说明
图1是作为常规硅光接收器件实例的太阳能电池的示意图；
图2是在图1的p-n二极管结构中光电转换原理的示意图；
图3是根据本发明一实施例的硅光接收器件的示意图；
图4A表示当通过非平衡扩散形成非常薄的掺杂区时一p-n结的结构；
图4B表示通过非平衡扩散形成在图4A的p-n结处的纵向和横向量子井(QW)的能带；
图5是根据本发明另一实施例的硅光接收器件的示意图；
图6表示在根据本发明的硅光接收器件中的光电转换原理；以及
图7表示使用单晶硅半导体的常规太阳能电池的外部量子效率(EQE)和根据本发明的硅光接收器件在作为太阳能电池使用时的外部量子效率相比较的图。
具体实施方式
参照图3，根据本发明一实施例的硅光接收器件包括：一衬底11，形成在衬底11一个面上的掺杂区15，以及形成在衬底11上以便在电学上连接到掺杂区15的第一和第二电极17和19。优选地，根据本发明的硅光接收器件还包括一形成在衬底11一个面上的控制薄膜13，其用作形成掺杂区15的掩模并控制掺杂区15使之形成为具有预期的极浅厚度。在形成掺杂区15后，控制薄膜13可被选择性地移除。
衬底11由包括例如硅(Si)，碳化硅(SiC)，或金刚石的半导体材料形成，并使用n型掺杂剂掺杂。
通过使用非平衡扩散技术将掺杂剂(如硼或磷)经过控制薄膜13的开口注入到衬底11中，使掺杂区15被掺杂与衬底11相反类型的掺杂剂，即p+型掺杂剂。
优选地，掺杂区15被掺杂为具有预期的极浅深度从而使量子井，量子点和量子线中的至少之一形成于掺杂区15和衬底11的边界，即p-n结14处，并且随之发生的量子局限效应能够将波长为100到1000nm的光，优选地，波长为200到900nm的光以高量子效率转换为电能。
这里，量子井通常形成于p-n结14处。作为选择地，量子点或者量子线形成于p-n结14处。也可在p-n结14处形成两个或更多个量子井，量子点和量子线。下文中，将对在p-n结14处形成量子井的情况作简要说明。因此，即便下文中说明的是在p-n结14处形成量子井，仍必须认为量子井，量子点和量子线中至少之一被形成。
图4A表示当通过非平衡扩散形成具有极浅深度的掺杂区15时p-n结14的结构。图4B表示通过非平衡扩散形成在图4A的p-n结处的纵向和横向量子井(QW)的能带。在图4B中，附图标记Ec表示导带能级，附图标记Ev表示价带能级，且附图标记Ef表示费米(Fermi)能级。这些能级在半导体相关技术领域中众所周知，因此不对其进行详细说明。
如图4A和4B所示，p-n结14具有量子井结构，其中不同的掺杂层交替出现。此处，井和势垒约为2nm，3nm。
这种在p-n结14处形成量子井的极浅掺杂，可通过最优地控制控制薄膜13的厚度和扩散条件来实现。
在扩散中，扩散分布的厚度能够通过适宜的扩散温度和衬底11的表面的形变势能(deformed potential)被控制到例如10至20nm。在这样极浅的扩散分布中，可产生量子井系统。此时，衬底11的表面的势能通过在其初始阶段的控制薄膜13的厚度和表面预处理发生形变，并且随着扩散的进行，形变加剧。
优选地，控制薄膜13是氧化硅薄膜SiO2，其具有适当的厚度从而使掺杂区15被形成为具有极浅的深度。例如，通过在衬底11的一个面上形成氧化硅薄膜并使用光刻法蚀刻氧化硅薄膜以获得用于扩散的一开口，控制薄膜13形成为具有一掩模结构。
如在扩散技术领域中众所周知的那样，如果氧化硅薄膜比适当的厚度(例如，几千埃)厚或者扩散温度低，空位(vacancy)主要影响扩散并且发生深扩散。如果氧化硅薄膜比适当的厚度薄或者扩散温度高，Si自填隙原子(self-interstitial)主要影响扩散并且发生深扩散。因此，当氧化硅薄膜形成为适当的厚度使得产生的自填隙原子和空位具有相似的百分比时，Si自填隙原子和空位被结合在一起从而使掺杂剂的扩散被抵消。因此，使极浅的掺杂区成为可能。Si自填隙原子和空位的物理特性在涉及扩散的技术领域中众所周知，因此不对其进行详细说明。
作为选择，衬底11可使用p型掺杂剂掺杂，掺杂区15可使用n+型掺杂剂掺杂。
为了和外部电路连接起来，第一电极17形成于其上已形成掺杂区15的衬底11的上表面上，且第二电极19形成于衬底11的下表面上。图3表示了一实例，其中第一电极17由一不透明金属形成从而与掺杂区15的外侧面部分接触。第一电极17也可由一透明电极材料如氧化铟锡(ITO)形成在掺杂区15的整个表面上。
代替将第二电极19形成在衬底11的下表面的是，第一和第二电极17和19也可形成在衬底11具有掺杂区15的那一面，如图5所示。图5中和图3相同的附图标记表示实际上实现相同功能的相同元件，因此不再对其进行说明。
如上所述，在根据本发明的硅光接收器件中，一量子井形成于掺杂区15和衬底11之间的p-n结14处。如图6所示，该量子井吸收入射光以产生一对电子和空穴。在图6中，附图标记31表示量子井，附图标记33表示子带能级，附图标记“e”表示电子，附图标记“h”表示空穴，且附图标记“p”表示光子。同时，附图标记Ev表示价带能级，而附图标记Ec表示导带能级。
如图6所示，当光入射到p-n结14处且具有量子井结构的p-n结14吸收了光子p时，电子e和空穴h每个都被激发到p-n结14处的量子井内的子带能级。因此，如果一外部电路，如图3和5中的负载电阻18被连接的话，将流过与辐射光数量成比例的电流。
根据本发明的硅光接收器件中的吸收波长根据微腔而确定，该微腔归因于在衬底11的表面上(实际在掺杂区15的表面上)产生的微缺陷。通过调整基于制造工艺的微腔尺寸，根据本发明的硅光接收器件中的吸收波长可被确定到一位于100至1100nm范围内的特定波长，或者可发生变化。
当微腔形成为具有统一的尺寸时，根据本发明的硅光接收器件吸收具有特定波长的光并将吸收的光转换为电能。当微腔形成为具有不同的尺寸时，根据本发明的硅光接收器件吸收具有大的波长谱带的光，例如与普通太阳能电池的吸收范围相对应的100至1100nm的光，优选200至900nm的波长谱带，并将吸收的光转换成电能。
微腔的产生来自形变势能，该形变势能归因于形成在掺杂区15表面上的微缺陷。因此，通过调整形变势能量子井可发生形变，从而使微腔被确定。所以，微腔的尺寸可被控制从而导致在特定或大的波长谱带的吸收。
因此，根据本发明的硅光接收器件被形成为具有统一尺寸的微腔，从而使其能用于探测具有特定波长的光。
此外，根据本发明的硅光接收器件被形成为具有不同尺寸的微腔，能够吸收具有大的波长谱带的光，包括普通太阳能电池的吸收波长谱带，如100至1100nm，优选200至900nm，从而使其能够用作太阳能电池。
图7表示使用单晶硅半导体的常规太阳能电池的外部量子效率(EQE)和根据本发明的硅光接收器件在作为太阳能电池使用时的外部量子效率相比较的图。参照图7，在200至900nm的波长谱带中，根据本发明的硅光接收器件的平均EQE约为50％至60％，而由单晶硅形成的常规太阳能电池的EQE仅为35％。此处，200至900nm的波长谱带常用于计算太阳能电池的效率。
从图7中可看到，在根据本发明的硅光接收器件被制造以用作太阳能电池的情况下，根据本发明的该硅光接收器件的效率远大于常规太阳能电池的效率。
更具体而言，在常规的太阳能电池中，使用普通掺杂方法将掺杂区形成在硅衬底上，光被吸收和散射到p型或n型掺杂层上因而不能被输出到一垂直电极并贡献于一响应的一电子空穴对所消灭。同时，常规太阳能电池具有间接带隙结构(indirect band gap structure)，其中只有被掺杂层下面的耗尽层所吸收的光能够作为电流信号被探测到而没有量子效应，因此提供了低探测效率。
另一方面，由于电荷分布势能(charge distribution potential)中的局部改变，使根据本发明的硅光接收器件的极浅掺杂区15产生了量子局限效应。特别是，如图6所示，在量子井31内形成了子带能级33，从而使光能够以高效率被探测到。
根据本发明的具有极浅掺杂区15的硅光接收器件提供了极好的灵敏度，例如在100至1100nm的光波长谱带中。
此外，根据外部电压的施加，通过改变量子井的子带能级，根据本发明的硅光接收器件能够移动整个吸收波长谱带。
更具体而言，可将电压施加到第一和第二电极17和19上以控制形成在p-n结14处的量子井内的子带能级之间的间隔。如果第一和第二电极17和19如图2所示形成，电压能够被垂直地施加。如果第一和第二电极17和19如图5所示形成，电压能够被水平地施加。
如上所述，当根据本发明的硅光接收器件被施加水平或垂直电压时，形成在p-n结14处的量子井内的子带能级能够被改变从而移动整个吸收波长谱带。
工业实用性
如上所述，根据本发明的硅光接收器件具有在一硅衬底上的一极浅掺杂区，因而即使硅被用作半导体材料，也可在p-n结处产生量子局限效应。由于量子局限效应，根据本发明的该硅光接收器件的量子效率远高于常规太阳能电池的量子效率。
根据本发明的硅光接收器件可被形成为能够吸收特定或大的波长谱带的光，并可被用作太阳能电池。
此外，根据外部电压的施加，通过改变量子井、量子点和量子线中至少其一内部的子带能级，根据本发明的硅光接收器件能够移动吸收波长谱带。
Claims (10)
1.一种硅光接收器件，包括：
基于n型或p型硅的一衬底；
一掺杂区，通过使用与衬底的掺杂剂类型相反类型的掺杂剂，该掺杂区在衬底的一面上被掺杂到极浅的深度，从而使对于波长在100至1100nm的光的光电转换效应由所述衬底和所述掺杂区之间的边界上的衬底p-n结中的量子局限效应产生；以及
形成在衬底上的第一和第二电极，以便在电学上连接到掺杂区。
2.权利要求1的硅光接收器件，其中形成有不同尺寸的微腔，从而使该硅光接收器件被用作吸收100至1100nm范围内不同波长的光的太阳能电池。
3.权利要求2的硅光接收器件，进一步包括在衬底的一面上形成的控制薄膜，该控制薄膜用作掺杂区形成时的掩模并有助于将掺杂区形成为具有极浅的深度。
4.权利要求1的硅光接收器件，进一步包括在衬底的一面上形成的控制薄膜，该控制薄膜用作掺杂区形成时的掩模并有助于将掺杂区形成为具有极浅的深度。
5.权利要求3或4的硅光接收器件，其中控制薄膜由氧化硅SiO2形成为使掺杂区能够被形成为具有极浅的深度的厚度。
6.权利要求1至4中任一权利要求的硅光接收器件，其中掺杂区通过掺杂剂的非平衡扩散形成。
7.权利要求6的硅光接收器件，其中掺杂剂包括硼和磷之一。
8.权利要求1至4中任一权利要求的硅光接收器件，其中在内部均产生电子空穴对的量子井、量子点和量子线中至少其一被形成在衬底与掺杂区的p-n结处。
9.权利要求8的硅光接收器件，其中通过施加外部电压，使量子井，量子点和量子线中至少其一内部的子带能级发生变化，从而使吸收光波长谱带发生变化。
10.权利要求1至4中任一权利要求的硅光接收器件，其中衬底由Si，SiC和金刚石之一形成。
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| KR100455288B1 (ko) * | 2002-03-08 | 2004-11-06 | 삼성전자주식회사 | 실리콘 발광소자를 이용한 평판형 표시장치 |
| KR100624413B1 (ko) | 2003-10-21 | 2006-09-18 | 삼성전자주식회사 | 수발광 소자 및 그 제조 방법 |
| KR100612875B1 (ko) * | 2004-11-24 | 2006-08-14 | 삼성전자주식회사 | 실리콘 광소자 제조방법 및 이에 의해 제조된 실리콘광소자 및 이를 적용한 화상 입력 및/또는 출력장치 |
| KR20060059327A (ko) * | 2004-11-27 | 2006-06-01 | 삼성전자주식회사 | 실리콘 광소자 제조방법 및 이에 의해 제조된 실리콘광소자 및 이를 적용한 화상 입력 및/또는 출력장치 |
| KR100927661B1 (ko) * | 2007-11-05 | 2009-11-20 | 한국전자통신연구원 | 광신호를 전기적 신호로 변환시키는 수광 소자 |
| KR101059780B1 (ko) * | 2009-07-02 | 2011-08-26 | 한국화학연구원 | 근적외선 감지 소자 및 그 제조방법 |
| EP2838120B1 (en) | 2013-08-12 | 2016-03-23 | Rigas Tehniska Universitate | Graded band gap pn homojunction formation method in silicon |
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| GB2275820A (en) * | 1993-02-26 | 1994-09-07 | Hitachi Europ Ltd | Optoelectronic device |
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| Publication number | Publication date |
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| KR100459894B1 (ko) | 2004-12-04 |
| KR20030067955A (ko) | 2003-08-19 |
| WO2003067670A1 (en) | 2003-08-14 |
| EP1472743A1 (en) | 2004-11-03 |
| CN1618132A (zh) | 2005-05-18 |
| US7253491B2 (en) | 2007-08-07 |
| US20050073019A1 (en) | 2005-04-07 |
| EP1472743A4 (en) | 2008-08-27 |
| AU2002367602A1 (en) | 2003-09-02 |
| JP2005517302A (ja) | 2005-06-09 |
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