CN102024863A - 高速增强型紫外硅选择性雪崩光电二极管及其制作方法 - Google Patents
高速增强型紫外硅选择性雪崩光电二极管及其制作方法 Download PDFInfo
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Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102157600A (zh) * | 2011-03-31 | 2011-08-17 | 湘潭大学 | 叉指状紫外增强型选择性硅光电二极管及其制作方法 |
CN102315237A (zh) * | 2011-08-12 | 2012-01-11 | 上海中科高等研究院 | 图像传感器 |
CN103325880A (zh) * | 2013-07-05 | 2013-09-25 | 湘潭大学 | 一种增强型硅基光电二极管及其制作方法 |
CN103824799A (zh) * | 2014-03-05 | 2014-05-28 | 上海华虹宏力半导体制造有限公司 | 对准结构及晶圆 |
CN103890972A (zh) * | 2011-10-21 | 2014-06-25 | 浜松光子学株式会社 | 光检测装置 |
CN104701420A (zh) * | 2015-03-19 | 2015-06-10 | 中国电子科技集团公司第四十四研究所 | 硅基紫外增强型光电二极管制作方法 |
CN107331723A (zh) * | 2017-06-29 | 2017-11-07 | 艾普柯微电子(上海)有限公司 | 感光元件及测距系统 |
CN110289273A (zh) * | 2019-06-28 | 2019-09-27 | 湖南师范大学 | 一种具有多指漏极的光电探测器件及其制作方法 |
CN113311520A (zh) * | 2020-02-26 | 2021-08-27 | 中移(上海)信息通信科技有限公司 | 可见光-近红外波段的光波吸收器及其制造方法 |
WO2023193385A1 (zh) * | 2022-04-08 | 2023-10-12 | 神盾股份有限公司 | 光感测元件 |
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JP2793238B2 (ja) * | 1989-03-31 | 1998-09-03 | 株式会社東芝 | 半導体受光装置及びその製造方法 |
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Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102157600A (zh) * | 2011-03-31 | 2011-08-17 | 湘潭大学 | 叉指状紫外增强型选择性硅光电二极管及其制作方法 |
CN102315237A (zh) * | 2011-08-12 | 2012-01-11 | 上海中科高等研究院 | 图像传感器 |
CN105870244B (zh) * | 2011-10-21 | 2017-10-20 | 浜松光子学株式会社 | 光检测装置 |
US9368528B2 (en) | 2011-10-21 | 2016-06-14 | Hamamatsu Photonics K.K. | Light detection device having a semiconductor light detection element and a mounting substrate with quenching circuits |
CN103890972A (zh) * | 2011-10-21 | 2014-06-25 | 浜松光子学株式会社 | 光检测装置 |
US9768222B2 (en) | 2011-10-21 | 2017-09-19 | Hamamatsu Photonics K.K. | Light detection device including a semiconductor light detection element, a mounting substrate, and quenching circuits wherein the first electrodes of the light detection element corresponding to the second electrodes of the mounting substrate are electrically connected through bump electrodes |
CN105870244A (zh) * | 2011-10-21 | 2016-08-17 | 浜松光子学株式会社 | 光检测装置 |
CN103890972B (zh) * | 2011-10-21 | 2016-06-01 | 浜松光子学株式会社 | 光检测装置 |
CN103325880B (zh) * | 2013-07-05 | 2015-10-07 | 湘潭大学 | 一种增强型硅基光电二极管及其制作方法 |
CN103325880A (zh) * | 2013-07-05 | 2013-09-25 | 湘潭大学 | 一种增强型硅基光电二极管及其制作方法 |
CN103824799B (zh) * | 2014-03-05 | 2016-06-08 | 上海华虹宏力半导体制造有限公司 | 对准结构及晶圆 |
CN103824799A (zh) * | 2014-03-05 | 2014-05-28 | 上海华虹宏力半导体制造有限公司 | 对准结构及晶圆 |
CN104701420A (zh) * | 2015-03-19 | 2015-06-10 | 中国电子科技集团公司第四十四研究所 | 硅基紫外增强型光电二极管制作方法 |
CN107331723A (zh) * | 2017-06-29 | 2017-11-07 | 艾普柯微电子(上海)有限公司 | 感光元件及测距系统 |
CN107331723B (zh) * | 2017-06-29 | 2019-09-06 | 艾普柯微电子(上海)有限公司 | 感光元件及测距系统 |
CN110289273A (zh) * | 2019-06-28 | 2019-09-27 | 湖南师范大学 | 一种具有多指漏极的光电探测器件及其制作方法 |
CN113311520A (zh) * | 2020-02-26 | 2021-08-27 | 中移(上海)信息通信科技有限公司 | 可见光-近红外波段的光波吸收器及其制造方法 |
WO2023193385A1 (zh) * | 2022-04-08 | 2023-10-12 | 神盾股份有限公司 | 光感测元件 |
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Address after: 518101 District D and E, 7th Floor, Building 3, Tingwei Industrial Park, 6 Liufang Road, Xin'an Street, Baoan District, Shenzhen City, Guangdong Province Patentee after: Shenzhen Aixiesheng Technology Co.,Ltd. Address before: 518101 District D and E, 7th Floor, Building 3, Tingwei Industrial Park, 6 Liufang Road, Xin'an Street, Baoan District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN AIXIESHENG TECHNOLOGY Co.,Ltd. |
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