WO2010080048A1 - Semiconductor geiger mode microcell photodiode (variants) - Google Patents
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- WO2010080048A1 WO2010080048A1 PCT/RU2009/000054 RU2009000054W WO2010080048A1 WO 2010080048 A1 WO2010080048 A1 WO 2010080048A1 RU 2009000054 W RU2009000054 W RU 2009000054W WO 2010080048 A1 WO2010080048 A1 WO 2010080048A1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 15
- 239000002019 doping agent Substances 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 23
- 230000002265 prevention Effects 0.000 claims description 4
- 230000005855 radiation Effects 0.000 abstract description 7
- 238000005516 engineering process Methods 0.000 abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
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- 230000015556 catabolic process Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 238000010791 quenching Methods 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 230000000171 quenching effect Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 230000023077 detection of light stimulus Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
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- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
- H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02027—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier for devices working in avalanche mode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
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Abstract
This technical solution relates to the semiconductor devices, more specifically, high efficiency detectors of light radiation, including visible range radiation, and can be used in different fields of science and technology.
Description
Semiconductor Geiger Mode Microcell Photodiode (Variants)
This technical solution relates to the semiconductor devices, more specifically, high efficiency detectors of light radiation, including visible range radiation, and can be used in different fields of science and technology.
Earlier, for the detection of light radiation, photomultipliers were used that are vacuum devices in which the flux of electrons emitted by the photocathode under the impact of optical radiation (photocurrent) is amplified by the multiplier system as a result of secondary electron emission; the anode current (the secondary electron collector) is much higher than the initial photocurrent (typically 105 times or more). The most widely used photomultipliers are those in which the electron flux is multiplied by several special electrodes having bent shapes, the so-called dynodes, having a secondary emission coefficient of greater than 1. For focusing and accelerating the electrons the anode and the dynodes are highly biased (600 - 3000 V). In some cases special magnetic focusing systems are used, or focusing is achieved in intersecting electric and magnetic fields.
However, those types of devices though simple in design have all the disadvantages of vacuum devices.
For that reason, solid state electronics devices are preferable for the detection of light radiation.
Known is a device for the detection of single photons ["Avalanche Photodiodes and Quenching Circuits for Single-Photon Detection", S.Cova, M.Ghioni, A.Lacaita, C.Samori and F.Zappa APPLIED OPTICS Vol.35 Ws 12 20 April 1996], comprising a silicon substrate with an epitaxial layer the surface of which has a small (10 - 200 μm) region (cell) the conductivity type of which is opposite to that of the layer. The cell is reversely biased to above the breakdown threshold. When a photon is absorbed in that region, a Geiger discharge occurs that is limited by the external quenching resistor. Said single photon counter has a high efficiency of light detection but a very small sensitive area and cannot measure the intensity of the light flux. To eliminate these disadvantages it is required to use a large number (>103) of such cells on a common substrate with an area of >1 mm2. Then each of the cells works as the photon counter described above, and the device detects light intensity in proportion to the number of responding cells.
Known is a device (Optical Communication Engineering. Photodetectors. Ed. U. Tsang, Moscow, 1988, p. 526) comprising a semiconductor substrate the surface of which has a semiconductor layer of the opposite conductivity type. Disadvantage of that device is the instability of its characteristics. This instability is caused by the following. The multiplication coefficient of an avalanche-like process is a steep function of the bias applied to the device. The critical potential at which the collision ionization of the semiconductor starts may vary from point to point across the device surface because real p- n junctions always contain vacancies, dislocations and other inhomogeneities of the crystalline structure. If the bias applied to the
p-n junction is greater than some threshold level, avalanche- like processes start in the substrate regions having the lower breakdown potential. Further growth of the breakdown voltage causes local uncontrolled micro-breakdowns that limit the amplification coefficient and the lifetime of the device.
Known is (Foss N.A., Ward S.A., "Large Area Avalanche Photodiode", Yournal of Applied Physics, Febr. 1984, vol. 44, p. 728- 731) an avalanche photodiode comprising a silicon substrate, a buffer layer and a field electrode. The field electrode is biased to provide for the formation of a space-charge region in the substrate with a field strength sufficient for the avalanche-like multiplication of the carriers. The photons absorbed in the space-charge region generate carriers that are accelerated by the field and multiply in an avalanche-like manner to cause an internal increase in the photocurrent and a higher sensitivity. If microplasma forms due to a local increase in the voltage drop at the buffer layer, the current through the microplasma is limited, and the effect of the microplasma on the device parameters becomes less strong. However, the injection of hot carriers from the semiconductor to the buffer layer increases the direct flow through the buffer layer and the accumulation of the internal charge and hence limits the sensitivity of the device.
Known also is a photoelectronic device (RU Patent 2102821) comprising a semiconductor substrate and semiconductor regions of the opposite conductivity type. Said semiconductor regions with the conductivity type opposite to that of the substrate regularly spaced from each other are used to produce single avalanche regions (microchannels) that provide for signal acceleration. Disadvantage of
the known device is the low efficiency of charge collection for further multiplication because photoelectrons (or holes) formed in the spaces between said semiconductor regions cannot be multiplied.
Known (RU Patent 2290721) is a silicon photomultiplier that according to the first embodiment comprises a p++-conductivity substrate with a dopant concentration of 1018-1020 cm"3 and consists of cells each of which comprises a p-conductivity epitaxial layer with a dopant concentration gradient of 10i8— 10 H cm'3 grown on the substrate, a p-conductivity layer with a dopant concentration of 1015- 1017 cm"3 and an n+-conductivity layer with a dopant concentration of 10 -10 cm" , each cell on the silicon oxide layer comprises a polycrystalline silicon resistor connecting said n+-conductivity layer to the power bus, and separating elements are located between the cells. According to the second embodiment, said silicon photomultiplier comprises an n-conductivity substrate with a p++-conductivity layer with a dopant concentration of 1018-1020 cm"3 and consists of cells, wherein the structure of said cells is similar to that of Embodiment 1 , each cell on the silicon oxide layer comprises a polycrystalline silicon resistor, and separating elements are located between the cells.
Disadvantage of the known device is the small size of the photosensitive area of the cell which is limited by the 10l5-1017 cm"3 dopant concentration region because it is only in that region that the field strength is sufficient to produce Geiger discharge. Moreover, additional doping of that region produces defects in the silicon that impair the noise characteristics of the device by increasing the frequency of the dark pulses and afterpulses thus reducing the threshold sensitivity of the device for low intensity light.
The object of this invention is to increase the sensitivity of light detection while improving the noise characteristics and simplifying the device technology.
It is suggested to achieve said object using the semiconductor Geiger mode microcell photodiode. According to the first embodiment said photodiode comprises a p-conductivity substrate with a dopant concentration of 1012-1017 cm"3 and consists of multiple similar cells each of which comprises, in sequence, an n-conductivity layer with a dopant concentration of 5- 1016-8- 1017 cm"3, an i-layer with a conductivity close to the intrinsic one and a dopant concentration of 10I2-1017 cm"3, a p+-conductivity layer acting as the entrance window located on a nonplanar surface that provides for a smaller i-layer thickness in the central part of the cell and a greater i-layer thickness in the cell periphery with a dopant concentration sufficient for the prevention of the complete depletion of the p+-layer at the working bias, wherein each cell comprises a resistor connecting said p+- conductivity layer to the power bus and separating elements are located between the cells. According to the second embodiment, said photodiode comprises an n-conductivity substrate with a dopant concentration of 1012-1017 cm"3 and consists of multiple similar cells each of which comprises, in sequence, a p-conductivity layer with a dopant concentration of 5- 1016— 8- 1017 cm"3, an i-layer with a conductivity close to the intrinsic one and a dopant concentration of 10I2-1015 cm"3, an n+-conductivity layer acting as the entrance window located on a nonplanar surface that provides for a smaller i-layer thickness in the central part of the cell and a greater i-layer thickness in the cell periphery with a dopant concentration sufficient for the
prevention of the complete depletion of the n+-layer at the working bias, wherein each cell comprises a resistor connecting said n+- conductivity layer to the power bus and separating elements are located between the cells.
Said object is achieved because the nonplanar surface of said entrance window focuses photoelectrons to efficiently collect them in the high-field region from the entire volume of the cell. The field strength sufficient for the development of Geiger discharge is developed across the entire area of the entrance window, i.e. due to the smaller i-layer thickness in the central part and due to the curvature of the heavily doped entrance window region in the periphery. The absence of additional doping preserves the initial structural perfection of the silicon and simplifies the manufacturing technology.
The Figure illustrates the design of the cells for the Geiger mode microcell photodiode according to the first embodiment with the following notations: (1) substrate, (2) first epitaxial layer, (3) second epitaxial layer, (4) layer with the conductivity type similar to that of the substrate, (5) antireflection dielectric layer, (6) resistor, (7) passivating oxide and (8) conductive contact.
The Geiger mode microcell photodiode according to the first embodiment comprises (1) p-conductivity substrate, (2) n+- conductivity epitaxial layer grown on the substrate (1), (3) i-type epitaxial layer, (4) p+-conductivity layer, (5) antireflection dielectric layer, (6) resistor, (7) passivating oxide and, preferably, (8) aluminum contact connecting the layer (4) to the power bus (6).
The Geiger mode microcell photodiode according to the second embodiment comprises (1) n-conductivity substrate, (2) p+- conductivity epitaxial layer grown on the substrate (1), (3) i-type epitaxial layer, (4) n+-conductivity layer, (5) antireflection dielectric layer, (6) resistor, (7) passivating oxide and, preferably, (8) aluminum contact connecting the layer (4) to the power bus (6).
The Geiger mode microcell photodiode consists of similar 20- 100 μm sized cells. Aluminum buses interconnect all the cells and apply a bias higher than the breakdown one thus providing for working in Geiger mode. If a photon is incident onto the active area of the cell a self-quenching Geiger discharge develops. Quenching, i.e. discharge stopping, is caused by the fluctuation of the carrier concentration to zero during the voltage drop at the p-n junction because each cell comprises a resistor (current limiting resistor). The signals from the responding cells are summed at the common load. Each cell has a multiplication coefficient of up to 107. The scatter of the multiplication coefficient depends on the technological scatter of cell capacity and breakdown voltage and is below 5%. Because all the cells are similar, the detector response to low intensity light flashes is proportional to the number of the responding cells, i.e. the light intensity.
The following technology is used for the manufacturing of said device.
On the source p-conductivity silicon wafer (substrate) with a dopant impurity of 1012 to 1017 cm"3, a double epitaxial layer is grown so that the n-conductivity layer adjacent to the substrate has a dopant concentration of 5- 1016— 8- 1017 cm"3, and the second i-layer is grown by
epitaxy without dopants or with a dopant providing for the opposite (p-) conductivity type. Depending on the thickness of the second layer, the dopant concentration in it will be 1012-1015 cm"3, and its conductivity type can be either p- or n-.
Individual cells as illustrated in the Figure are formed in the second epitaxial i-layer by local liquid chemical etching of the silicon to a depth of a few microns. The masking layer is the silicon oxide with stripped windows through which the silicon is first etched and then ion doped to produce a p-conductivity entrance window with a dopant concentration of about 1018 cm 3. The entrance window is coated with dielectric layers of silicon oxide and silicon nitride providing for the antireflection properties in the required spectral region.
In each cell, a polycrystalline silicon resistor is formed on the antireflection coating one side of which is connected to the p-layer of the cell and the other to the common aluminum bus interconnecting all the cells of the Geiger mode microcell photodiode.
The separating elements between the cells are formed by reactive ion etching of the silicon and filling the resultant trenches with metal.
Claims
1. Semiconductor Geiger mode microcell photodiode comprising a a p-conductivity substrate with a dopant concentration of 10l2-1017 cm"3 and consisting of multiple similar cells each of which comprises, in sequence, an n-conductivity layer with a dopant concentration of 5-1016-8-1017 cm"3, an i-layer with a conductivity close to the intrinsic one and a dopant concentration of 10l2-1017 cm'3, a p+-conductivity layer acting as the entrance window located on a nonplanar surface that provides for a smaller i-layer thickness in the central part of the cell and a greater i-layer thickness in the cell periphery with a dopant concentration sufficient for the prevention of the complete depletion of the p+-layer at the working bias, wherein each cell comprises a resistor connecting said p+-conductivity layer to the power bus and separating elements are located between the cells.
2. Semiconductor Geiger mode microcell photodiode comprising an n- conductivity substrate with a dopant concentration of 1012-1017 cm"3 and consisting of multiple similar cells each of which comprises, in sequence, a p-conductivity layer with a dopant concentration of 5-1016— 8- 1017 cm"3, an i-layer with a conductivity close to the intrinsic one and a dopant concentration of 1012-1015 cm"3, an n+-conductivity layer acting as the entrance window located on a nonplanar surface that provides for a smaller i-layer thickness in the central part of the cell and a greater i-layer thickness in the cell periphery with a dopant concentration sufficient for the prevention of the complete depletion of the n+-layer at the working bias, wherein each cell comprises a resistor connecting said n+-conductivity layer to the power bus and separating elements are located between the cells.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE112009004341.0T DE112009004341B4 (en) | 2009-01-11 | 2009-02-06 | Semiconductor Geiger mode microcells photodiodes |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| RU2009100052 | 2009-01-11 | ||
| RU2009100052 | 2009-01-11 |
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| WO2010080048A1 true WO2010080048A1 (en) | 2010-07-15 |
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| PCT/RU2009/000054 WO2010080048A1 (en) | 2009-01-11 | 2009-02-06 | Semiconductor geiger mode microcell photodiode (variants) |
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| WO (1) | WO2010080048A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11346924B2 (en) | 2019-12-09 | 2022-05-31 | Waymo Llc | SiPM with cells of different sizes |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005106971A1 (en) * | 2004-05-05 | 2005-11-10 | Max - Planck - Gesellschaft Zur Forderung Der Wissenschaften E.V. | Silicon photomultiplier (variants) and a cell therefor |
| US20070187611A1 (en) * | 2006-02-14 | 2007-08-16 | Samir Chowdhury | Quantitative radiation detection using Geiger mode avalanche photodiode binary detector cell arrays |
| US20090008566A1 (en) * | 2006-02-01 | 2009-01-08 | Koninklijke Philips Electronics N. V. | Geiger mode avalanche photodiode |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2475296A1 (en) * | 1980-02-01 | 1981-08-07 | Thomson Csf | Avalanche photo-diode with fibre optic coupling - has concave illuminated surface and functions without guard ring |
| RU2102821C1 (en) | 1996-10-10 | 1998-01-20 | Зираддин Ягуб-оглы Садыгов | Avalanche photodiode |
| US6730979B2 (en) * | 2002-09-12 | 2004-05-04 | The Boeing Company | Recessed p-type region cap layer avalanche photodiode |
-
2009
- 2009-02-06 WO PCT/RU2009/000054 patent/WO2010080048A1/en active Application Filing
- 2009-02-06 DE DE112009004341.0T patent/DE112009004341B4/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005106971A1 (en) * | 2004-05-05 | 2005-11-10 | Max - Planck - Gesellschaft Zur Forderung Der Wissenschaften E.V. | Silicon photomultiplier (variants) and a cell therefor |
| US20090008566A1 (en) * | 2006-02-01 | 2009-01-08 | Koninklijke Philips Electronics N. V. | Geiger mode avalanche photodiode |
| US20070187611A1 (en) * | 2006-02-14 | 2007-08-16 | Samir Chowdhury | Quantitative radiation detection using Geiger mode avalanche photodiode binary detector cell arrays |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11346924B2 (en) | 2019-12-09 | 2022-05-31 | Waymo Llc | SiPM with cells of different sizes |
| US11874402B2 (en) | 2019-12-09 | 2024-01-16 | Waymo Llc | SiPM with cells of different sizes including at least one large-area cell is substantially centered along a substrate with respect to the optical axis of an aperture array |
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| DE112009004341T5 (en) | 2012-06-21 |
| DE112009004341B4 (en) | 2015-12-10 |
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