RU2010135771A - Стеклянные фритты - Google Patents
Стеклянные фритты Download PDFInfo
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- RU2010135771A RU2010135771A RU2010135771/03A RU2010135771A RU2010135771A RU 2010135771 A RU2010135771 A RU 2010135771A RU 2010135771/03 A RU2010135771/03 A RU 2010135771/03A RU 2010135771 A RU2010135771 A RU 2010135771A RU 2010135771 A RU2010135771 A RU 2010135771A
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- 229910000272 alkali metal oxide Inorganic materials 0.000 claims abstract 2
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 claims abstract 2
- 239000000758 substrate Substances 0.000 claims 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 2
- 229910005793 GeO 2 Inorganic materials 0.000 claims 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims 2
- 239000005357 flat glass Substances 0.000 claims 2
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 claims 1
- 229910018068 Li 2 O Inorganic materials 0.000 claims 1
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- 229910010413 TiO 2 Inorganic materials 0.000 claims 1
- 229910052797 bismuth Inorganic materials 0.000 claims 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 210000003298 dental enamel Anatomy 0.000 claims 1
- DQUIAMCJEJUUJC-UHFFFAOYSA-N dibismuth;dioxido(oxo)silane Chemical compound [Bi+3].[Bi+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O.[O-][Si]([O-])=O DQUIAMCJEJUUJC-UHFFFAOYSA-N 0.000 claims 1
- 150000003018 phosphorus compounds Chemical class 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 claims 1
- 239000004408 titanium dioxide Substances 0.000 claims 1
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 abstract 4
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 abstract 4
- DLYUQMMRRRQYAE-UHFFFAOYSA-N tetraphosphorus decaoxide Chemical compound O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910003069 TeO2 Inorganic materials 0.000 abstract 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 2
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 abstract 2
- 229910052593 corundum Inorganic materials 0.000 abstract 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract 2
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 abstract 2
- 229910000108 silver(I,III) oxide Inorganic materials 0.000 abstract 2
- LAJZODKXOMJMPK-UHFFFAOYSA-N tellurium dioxide Chemical compound O=[Te]=O LAJZODKXOMJMPK-UHFFFAOYSA-N 0.000 abstract 2
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 2
- FUJCRWPEOMXPAD-UHFFFAOYSA-N Li2O Inorganic materials [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 abstract 1
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Inorganic materials O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 abstract 1
- GHPGOEFPKIHBNM-UHFFFAOYSA-N antimony(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Sb+3].[Sb+3] GHPGOEFPKIHBNM-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- XUCJHNOBJLKZNU-UHFFFAOYSA-M dilithium;hydroxide Chemical compound [Li+].[Li+].[OH-] XUCJHNOBJLKZNU-UHFFFAOYSA-M 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 abstract 1
- YEAUATLBSVJFOY-UHFFFAOYSA-N tetraantimony hexaoxide Chemical compound O1[Sb](O2)O[Sb]3O[Sb]1O[Sb]2O3 YEAUATLBSVJFOY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
- C03C8/04—Frit compositions, i.e. in a powdered or comminuted form containing zinc
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
- C03C8/08—Frit compositions, i.e. in a powdered or comminuted form containing phosphorus
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
- C03C8/18—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing free metals
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
- C03C8/20—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing titanium compounds; containing zirconium compounds
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/52—Electrically conductive inks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Physics & Mathematics (AREA)
- Sustainable Energy (AREA)
- Computer Hardware Design (AREA)
- Sustainable Development (AREA)
- Dispersion Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wood Science & Technology (AREA)
- Conductive Materials (AREA)
- Photovoltaic Devices (AREA)
- Glass Compositions (AREA)
- Surface Treatment Of Glass (AREA)
Abstract
1. Фритта, содержащая TeO2; и один или более из Bi2O3 и SiO2, при этом данная фритта не содержит целенаправленно добавленного свинца. ! 2. Фритта по п.1, дополнительно содержащая B2O3. ! 3. Фритта по п.2, дополнительно содержащая по меньшей мере один первый оксидный компонент, выбранный из одного или более из следующих: ZnO, Al2О3 и их комбинаций. ! 4. Фритта по п.2 или 3, дополнительно содержащая по меньшей мере один второй оксидный компонент, выбранный из одного или более из следующих: Ag2O, Sb2O3, GeO2, In2O3, Р2O5, V2O5, Nb2O5, Та2O5 и их комбинаций. ! 5. Фритта по п.2, дополнительно содержащая по меньшей мере один оксид щелочного металла, выбранный из одного или более из следующих: Na2O5 Li2O, K2O и их комбинаций. ! 6. Фритта по п.2, дополнительно содержащая по меньшей мере один оксид щелочноземельного металла, выбранный из одного или более из следующих: ВаО, CaO, MgO, SrO и их комбинаций. ! 7. Фритта по п.2, где TeO2 присутствует в количестве в диапазоне от около 0,1 мас.% до около 10 мас.%. ! 8. Фритта по п.7, дополнительно содержащая по меньшей мере один первый оксидный компонент, выбранный из одного или более из следующих: ! ZnO в количестве в диапазоне от около 0 мас.% до около 15 мас.%; и ! Al2O3 в количестве в диапазоне от около 0 мас.% до около 3 мас.%. ! 9. Фритта по п.7 или 8, дополнительно содержащая по меньшей мере один второй оксидный компонент, выбранный из одного или более из следующих: ! Ag2O в количестве в диапазоне от около 0 мас.% до около 8 мас.%; ! Sb2O3 в количестве в диапазоне от около 0 мас.% до около 5 мас.%; ! GeO2 в количестве в диапазоне от около 0 мас.% до около 10 мас.%; ! In2O3 в количестве в диапазоне от около 0 мас.% до около 5 мас.%; ! Р2O5 в количестве в диапазоне от около 0 мас.% до около 8 мас.%; ! V2O5 в коли
Claims (15)
1. Фритта, содержащая TeO2; и один или более из Bi2O3 и SiO2, при этом данная фритта не содержит целенаправленно добавленного свинца.
2. Фритта по п.1, дополнительно содержащая B2O3.
3. Фритта по п.2, дополнительно содержащая по меньшей мере один первый оксидный компонент, выбранный из одного или более из следующих: ZnO, Al2О3 и их комбинаций.
4. Фритта по п.2 или 3, дополнительно содержащая по меньшей мере один второй оксидный компонент, выбранный из одного или более из следующих: Ag2O, Sb2O3, GeO2, In2O3, Р2O5, V2O5, Nb2O5, Та2O5 и их комбинаций.
5. Фритта по п.2, дополнительно содержащая по меньшей мере один оксид щелочного металла, выбранный из одного или более из следующих: Na2O5 Li2O, K2O и их комбинаций.
6. Фритта по п.2, дополнительно содержащая по меньшей мере один оксид щелочноземельного металла, выбранный из одного или более из следующих: ВаО, CaO, MgO, SrO и их комбинаций.
7. Фритта по п.2, где TeO2 присутствует в количестве в диапазоне от около 0,1 мас.% до около 10 мас.%.
8. Фритта по п.7, дополнительно содержащая по меньшей мере один первый оксидный компонент, выбранный из одного или более из следующих:
ZnO в количестве в диапазоне от около 0 мас.% до около 15 мас.%; и
Al2O3 в количестве в диапазоне от около 0 мас.% до около 3 мас.%.
9. Фритта по п.7 или 8, дополнительно содержащая по меньшей мере один второй оксидный компонент, выбранный из одного или более из следующих:
Ag2O в количестве в диапазоне от около 0 мас.% до около 8 мас.%;
Sb2O3 в количестве в диапазоне от около 0 мас.% до около 5 мас.%;
GeO2 в количестве в диапазоне от около 0 мас.% до около 10 мас.%;
In2O3 в количестве в диапазоне от около 0 мас.% до около 5 мас.%;
Р2O5 в количестве в диапазоне от около 0 мас.% до около 8 мас.%;
V2O5 в количестве в диапазоне от около 0 мас.% до около 8 мас.%;
Nb2O5 в количестве в диапазоне от около 0 мас.% до около 8 мас.%; и
Та2O5 в количестве в диапазоне от около 0 мас.% до около 8 мас.%.
10. Проводящая паста, содержащая, по существу, не содержащую свинца фритту по любому из пп.2-9 и проводящий материал.
11. Паста по п.10, где фритта содержится в количестве в диапазоне от около 1 мас.% до около 5 мас.%.
12. Паста по п.10, дополнительно содержащая один или более из следующих: теллурат висмута и силикат висмута, диоксид титана, диоксид циркония, соединения фосфора и их комбинации.
13. Изделие, содержащее субстрат и проводящую пасту по п.10, нанесенную на субстрат.
14. Изделие по п.13, в котором субстрат представляет собой один из следующих: полупроводник, листовое стекло или эмаль, нанесенную на листовое стекло.
15. Изделие по п.14, в котором просветляющий слой, содержащий ТiO2 и Si3N4, нанесен непосредственно на субстрат, и проводящая паста нанесена на просветляющий слой.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/022,294 | 2008-01-30 | ||
| US12/022,294 US7736546B2 (en) | 2008-01-30 | 2008-01-30 | Glass frits |
| PCT/US2009/032107 WO2009097264A1 (en) | 2008-01-30 | 2009-01-27 | Glass frits |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| RU2010135771A true RU2010135771A (ru) | 2012-03-10 |
| RU2494983C2 RU2494983C2 (ru) | 2013-10-10 |
Family
ID=40566541
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| RU2010135771/03A RU2494983C2 (ru) | 2008-01-30 | 2009-01-27 | Стеклянные фритты |
Country Status (11)
| Country | Link |
|---|---|
| US (2) | US7736546B2 (ru) |
| EP (1) | EP2247547B1 (ru) |
| JP (1) | JP5523349B2 (ru) |
| KR (1) | KR101552745B1 (ru) |
| CN (1) | CN101932535B (ru) |
| BR (1) | BRPI0907092A2 (ru) |
| CA (1) | CA2712348C (ru) |
| IL (1) | IL206987A (ru) |
| MY (1) | MY153986A (ru) |
| RU (1) | RU2494983C2 (ru) |
| WO (1) | WO2009097264A1 (ru) |
Families Citing this family (94)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7736546B2 (en) * | 2008-01-30 | 2010-06-15 | Basf Se | Glass frits |
| US8563352B2 (en) * | 2008-02-05 | 2013-10-22 | Gtat Corporation | Creation and translation of low-relief texture for a photovoltaic cell |
| EP2295383A4 (en) * | 2008-04-18 | 2012-10-10 | Nippon Electric Glass Co | GLASS COMPOSITION FOR DYE-SENSITIZED SOLAR CELL AND MATERIAL FOR DYE-SENSITIZED SOLAR CELL |
| WO2009154314A1 (ja) * | 2008-06-17 | 2009-12-23 | 日本電気硝子株式会社 | 太陽電池用基板および色素増感型太陽電池用酸化物半導体電極 |
| US8668798B2 (en) * | 2009-06-30 | 2014-03-11 | Guardian Industries Corp. | Non-toxic water-based frit slurry paste, and assembly incorporating the same |
| JP2011044426A (ja) | 2009-07-24 | 2011-03-03 | Nippon Electric Glass Co Ltd | 太陽電池用導電膜付ガラス基板 |
| KR101139459B1 (ko) | 2009-08-27 | 2012-04-30 | 엘지전자 주식회사 | 태양전지 및 그 제조방법 |
| JP5559509B2 (ja) | 2009-10-28 | 2014-07-23 | 昭栄化学工業株式会社 | 太陽電池電極形成用導電性ペースト |
| JP5559510B2 (ja) * | 2009-10-28 | 2014-07-23 | 昭栄化学工業株式会社 | 太陽電池素子及びその製造方法 |
| US9540274B2 (en) | 2010-04-15 | 2017-01-10 | Ferro Corporation | Low-melting lead-free bismuth sealing glasses |
| TWI498308B (zh) | 2010-05-04 | 2015-09-01 | Du Pont | 含有鉛-碲-鋰-鈦-氧化物之厚膜膏及其在半導體裝置之製造中的用途 |
| JP5011428B2 (ja) | 2010-10-07 | 2012-08-29 | 昭栄化学工業株式会社 | 太陽電池素子並びにその製造方法 |
| JP2012094859A (ja) * | 2010-10-14 | 2012-05-17 | Rohm & Haas Electronic Materials Llc | 金属コンタクトを形成する改良された方法 |
| US9359247B2 (en) | 2011-02-22 | 2016-06-07 | Guardian Industries Corp. | Coefficient of thermal expansion filler for vanadium-based frit materials and/or methods of making and/or using the same |
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| US8721931B2 (en) | 2005-12-21 | 2014-05-13 | E I Du Pont De Nemours And Company | Paste for solar cell electrode, solar cell electrode manufacturing method, and solar cell |
| JP2007235082A (ja) | 2006-02-02 | 2007-09-13 | E I Du Pont De Nemours & Co | 太陽電池電極用ペースト |
| JP2007220647A (ja) * | 2006-02-14 | 2007-08-30 | Samsung Sdi Co Ltd | 有機電界発光表示装置及びその製造方法 |
| EP2015367A4 (en) | 2006-04-25 | 2011-10-05 | Sharp Kk | ELECTRO-CONDUCTIVE PASTE FOR A SOLAR BATTERY ELECTRODE |
| US20070253140A1 (en) * | 2006-04-28 | 2007-11-01 | Randall Michael S | Base metal electrode multilayer capacitor with localized oxidizing source |
| US7736546B2 (en) * | 2008-01-30 | 2010-06-15 | Basf Se | Glass frits |
| US8383011B2 (en) * | 2008-01-30 | 2013-02-26 | Basf Se | Conductive inks with metallo-organic modifiers |
-
2008
- 2008-01-30 US US12/022,294 patent/US7736546B2/en not_active Expired - Fee Related
-
2009
- 2009-01-27 KR KR1020107019314A patent/KR101552745B1/ko active IP Right Grant
- 2009-01-27 CN CN2009801036188A patent/CN101932535B/zh not_active Expired - Fee Related
- 2009-01-27 WO PCT/US2009/032107 patent/WO2009097264A1/en active Application Filing
- 2009-01-27 EP EP09707045.2A patent/EP2247547B1/en not_active Not-in-force
- 2009-01-27 JP JP2010545076A patent/JP5523349B2/ja not_active Expired - Fee Related
- 2009-01-27 RU RU2010135771/03A patent/RU2494983C2/ru not_active IP Right Cessation
- 2009-01-27 CA CA2712348A patent/CA2712348C/en not_active Expired - Fee Related
- 2009-01-27 BR BRPI0907092-3A patent/BRPI0907092A2/pt not_active Application Discontinuation
- 2009-01-27 MY MYPI2010003436A patent/MY153986A/en unknown
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2010
- 2010-04-13 US US12/759,368 patent/US7935279B2/en not_active Expired - Fee Related
- 2010-07-14 IL IL206987A patent/IL206987A/en active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| MY153986A (en) | 2015-04-30 |
| US7736546B2 (en) | 2010-06-15 |
| EP2247547A1 (en) | 2010-11-10 |
| US7935279B2 (en) | 2011-05-03 |
| KR101552745B1 (ko) | 2015-09-11 |
| IL206987A0 (en) | 2010-12-30 |
| KR20100125273A (ko) | 2010-11-30 |
| WO2009097264A1 (en) | 2009-08-06 |
| US20090189126A1 (en) | 2009-07-30 |
| JP2011510897A (ja) | 2011-04-07 |
| JP5523349B2 (ja) | 2014-06-18 |
| IL206987A (en) | 2014-12-31 |
| RU2494983C2 (ru) | 2013-10-10 |
| US20100244205A1 (en) | 2010-09-30 |
| CA2712348A1 (en) | 2009-08-06 |
| CN101932535B (zh) | 2013-06-05 |
| CA2712348C (en) | 2017-05-23 |
| EP2247547B1 (en) | 2018-06-20 |
| CN101932535A (zh) | 2010-12-29 |
| BRPI0907092A2 (pt) | 2020-07-28 |
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