PL379547A1 - Sposób otrzymywania objętościowego monokrystalicznego azotku zawierającego gal, usuwania zanieczyszczeń z otrzymanego kryształu oraz wytwarzania podłoży, wykonanych z objętościowego monokrystalicznego azotku zawierającego gal - Google Patents

Sposób otrzymywania objętościowego monokrystalicznego azotku zawierającego gal, usuwania zanieczyszczeń z otrzymanego kryształu oraz wytwarzania podłoży, wykonanych z objętościowego monokrystalicznego azotku zawierającego gal

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Publication number
PL379547A1
PL379547A1 PL379547A PL37954703A PL379547A1 PL 379547 A1 PL379547 A1 PL 379547A1 PL 379547 A PL379547 A PL 379547A PL 37954703 A PL37954703 A PL 37954703A PL 379547 A1 PL379547 A1 PL 379547A1
Authority
PL
Poland
Prior art keywords
containing nitride
bulk monocrystalline
monocrystalline gallium
obtaining bulk
obtaining
Prior art date
Application number
PL379547A
Other languages
English (en)
Other versions
PL224993B1 (pl
Inventor
Robert Dwilinski
Roman Doradzinski
Jerzy Garczynski
Leszek Sierzputowski
Yasuo Kanbara
Original Assignee
Ammono Sp Z Oo
Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from PL02357699A external-priority patent/PL357699A1/pl
Priority claimed from PL02357703A external-priority patent/PL357703A1/pl
Priority claimed from PL02357701A external-priority patent/PL357701A1/pl
Priority claimed from PL02357702A external-priority patent/PL357702A1/pl
Priority claimed from PL02357698A external-priority patent/PL357698A1/pl
Priority claimed from PL357700A external-priority patent/PL219601B1/pl
Priority claimed from PL02357705A external-priority patent/PL357705A1/pl
Priority claimed from PL357697A external-priority patent/PL232212B1/pl
Application filed by Ammono Sp Z Oo, Nichia Corp filed Critical Ammono Sp Z Oo
Priority to PL379547A priority Critical patent/PL224993B1/pl
Publication of PL379547A1 publication Critical patent/PL379547A1/pl
Publication of PL224993B1 publication Critical patent/PL224993B1/pl

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Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/40AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403AIII-nitrides
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/38Nitrides
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/40AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403AIII-nitrides
    • C30B29/406Gallium nitride
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/005Epitaxial layer growth
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00Single-crystal growth from melt solutions using molten solvents

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
PL379547A 2002-12-11 2003-12-11 Sposób otrzymywania objętościowego monokrystalicznego azotku zawierającego gal PL224993B1 (pl)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PL379547A PL224993B1 (pl) 2002-12-11 2003-12-11 Sposób otrzymywania objętościowego monokrystalicznego azotku zawierającego gal

Applications Claiming Priority (17)

Application Number Priority Date Filing Date Title
PL02357699A PL357699A1 (pl) 2002-12-11 2002-12-11 Sposób usuwania zanieczyszczeń z objętościowego monokrystalicznego azotku zawierającego gal
PL02357703A PL357703A1 (pl) 2002-12-11 2002-12-11 Sposób zmniejszania poziomu zanieczyszczeń w objętościowym monokrystalicznym azotku zawierającym gal
PLP-357701 2002-12-11
PL02357701A PL357701A1 (pl) 2002-12-11 2002-12-11 Sposób otrzymywania objętościowego monokrystalicznego azotku zawierającego gal
PLP-357705 2002-12-11
PLP-357698 2002-12-11
PLP-357699 2002-12-11
PLP-357702 2002-12-11
PLP-357697 2002-12-11
PL02357702A PL357702A1 (pl) 2002-12-11 2002-12-11 Sposób otrzymywania objętościowego monokrystalicznego azotku zawierającego gal
PLP-357700 2002-12-11
PL02357698A PL357698A1 (pl) 2002-12-11 2002-12-11 Sposób otrzymywania podłoża z objętościowego monokrystalicznego azotku zawierającego gal
PL357700A PL219601B1 (pl) 2002-12-11 2002-12-11 Sposób otrzymywania objętościowego monokrystalicznego azotku zawierającego gal
PL02357705A PL357705A1 (pl) 2002-12-11 2002-12-11 Sposób regulacji szybkości wzrostu kryształów w procesie otrzymywania objętościowego monokrystalicznego azotku galu
PL357697A PL232212B1 (pl) 2002-12-11 2002-12-11 Sposób otrzymywania objętościowego monokrystalicznego azotku zawierającego gal w środowisku nadkrytycznego rozpuszczalnika amoniakalnego
PLP-357703 2002-12-11
PL379547A PL224993B1 (pl) 2002-12-11 2003-12-11 Sposób otrzymywania objętościowego monokrystalicznego azotku zawierającego gal

Publications (2)

Publication Number Publication Date
PL379547A1 true PL379547A1 (pl) 2006-10-16
PL224993B1 PL224993B1 (pl) 2017-02-28

Family

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Family Applications (1)

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PL379547A PL224993B1 (pl) 2002-12-11 2003-12-11 Sposób otrzymywania objętościowego monokrystalicznego azotku zawierającego gal

Country Status (8)

Country Link
US (1) US7811380B2 (pl)
EP (1) EP1590509B1 (pl)
JP (1) JP4824313B2 (pl)
KR (1) KR101088991B1 (pl)
AU (1) AU2003285767A1 (pl)
PL (1) PL224993B1 (pl)
TW (1) TWI334890B (pl)
WO (1) WO2004053206A1 (pl)

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PL219109B1 (pl) * 2001-06-06 2015-03-31 Ammono Spółka Z Ograniczoną Odpowiedzialnością Sposób otrzymywania objętościowego monokrystalicznego azotku zawierającego gal oraz urządzenie do otrzymywania objętościowego monokrystalicznego azotku zawierającego gal
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