PL357705A1 - Sposób regulacji szybkości wzrostu kryształów w procesie otrzymywania objętościowego monokrystalicznego azotku galu - Google Patents
Sposób regulacji szybkości wzrostu kryształów w procesie otrzymywania objętościowego monokrystalicznego azotku galuInfo
- Publication number
- PL357705A1 PL357705A1 PL02357705A PL35770502A PL357705A1 PL 357705 A1 PL357705 A1 PL 357705A1 PL 02357705 A PL02357705 A PL 02357705A PL 35770502 A PL35770502 A PL 35770502A PL 357705 A1 PL357705 A1 PL 357705A1
- Authority
- PL
- Poland
- Prior art keywords
- voluminal
- mono
- obtaining
- crystal growth
- growth rate
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Priority Applications (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PL02357705A PL357705A1 (pl) | 2002-12-11 | 2002-12-11 | Sposób regulacji szybkości wzrostu kryształów w procesie otrzymywania objętościowego monokrystalicznego azotku galu |
| US10/537,804 US7811380B2 (en) | 2002-12-11 | 2003-12-11 | Process for obtaining bulk mono-crystalline gallium-containing nitride |
| KR1020057010667A KR101088991B1 (ko) | 2002-12-11 | 2003-12-11 | 벌크 단결정 갈륨-함유 질화물의 제조공정 |
| JP2004558481A JP4824313B2 (ja) | 2002-12-11 | 2003-12-11 | ガリウム含有窒化物バルク単結晶を得るためのプロセス、得られた結晶から不純物を排除するためのプロセス、及びガリウム含有窒化物バルク単結晶からなる基板を製造するためのプロセス |
| EP03778841.1A EP1590509B1 (en) | 2002-12-11 | 2003-12-11 | Process for obtaining bulk monocrystalline gallium-containing nitride |
| TW092135281A TWI334890B (en) | 2002-12-11 | 2003-12-11 | Process for obtaining bulk mono-crystalline gallium-containing nitride, eliminating impurities from the obtained crystal and manufacturing substrates made of bulk mono-crystalline gallium-containing nitride |
| PCT/JP2003/015904 WO2004053206A1 (en) | 2002-12-11 | 2003-12-11 | Process for obtaining bulk monocrystalline gallium-containing nitride |
| AU2003285767A AU2003285767A1 (en) | 2002-12-11 | 2003-12-11 | Process for obtaining bulk monocrystalline gallium-containing nitride |
| PL379547A PL224993B1 (pl) | 2002-12-11 | 2003-12-11 | Sposób otrzymywania objętościowego monokrystalicznego azotku zawierającego gal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PL02357705A PL357705A1 (pl) | 2002-12-11 | 2002-12-11 | Sposób regulacji szybkości wzrostu kryształów w procesie otrzymywania objętościowego monokrystalicznego azotku galu |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| PL357705A1 true PL357705A1 (pl) | 2004-06-14 |
Family
ID=32733405
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PL02357705A PL357705A1 (pl) | 2002-12-11 | 2002-12-11 | Sposób regulacji szybkości wzrostu kryształów w procesie otrzymywania objętościowego monokrystalicznego azotku galu |
Country Status (1)
| Country | Link |
|---|---|
| PL (1) | PL357705A1 (pl) |
-
2002
- 2002-12-11 PL PL02357705A patent/PL357705A1/pl not_active Application Discontinuation
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| REFS | Decisions on refusal to grant patents (taken after the publication of the particulars of the applications) |