AU2002223766A1 - Single crystals, method for making single crystals by growth in solution and uses - Google Patents

Single crystals, method for making single crystals by growth in solution and uses

Info

Publication number
AU2002223766A1
AU2002223766A1 AU2002223766A AU2376602A AU2002223766A1 AU 2002223766 A1 AU2002223766 A1 AU 2002223766A1 AU 2002223766 A AU2002223766 A AU 2002223766A AU 2376602 A AU2376602 A AU 2376602A AU 2002223766 A1 AU2002223766 A1 AU 2002223766A1
Authority
AU
Australia
Prior art keywords
single crystals
growth
solution
making
making single
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002223766A
Inventor
Vitali Tatartchenko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Luxium Solutions SAS
Original Assignee
Saint Gobain Cristaux and Detecteurs SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Saint Gobain Cristaux and Detecteurs SAS filed Critical Saint Gobain Cristaux and Detecteurs SAS
Publication of AU2002223766A1 publication Critical patent/AU2002223766A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/14—Phosphates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AU2002223766A 2000-11-09 2001-11-07 Single crystals, method for making single crystals by growth in solution and uses Abandoned AU2002223766A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0014423 2000-11-09
FR0014423A FR2816330B1 (en) 2000-11-09 2000-11-09 SINGLE CRYSTALS, METHOD FOR MANUFACTURING SINGLE CRYSTALS BY GROWING SOLUTION AND APPLICATIONS
PCT/FR2001/003442 WO2002038836A1 (en) 2000-11-09 2001-11-07 Single crystals, method for making single crystals by growth in solution and uses

Publications (1)

Publication Number Publication Date
AU2002223766A1 true AU2002223766A1 (en) 2002-05-21

Family

ID=8856266

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002223766A Abandoned AU2002223766A1 (en) 2000-11-09 2001-11-07 Single crystals, method for making single crystals by growth in solution and uses

Country Status (6)

Country Link
US (1) US6929693B2 (en)
CN (2) CN1924114B (en)
AU (1) AU2002223766A1 (en)
FR (1) FR2816330B1 (en)
RU (1) RU2280719C2 (en)
WO (1) WO2002038836A1 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7996901B2 (en) * 2006-03-31 2011-08-09 Lenovo (Singapore) Pte. Ltd. Hypervisor area for email virus testing
CN105256377B (en) * 2015-11-10 2017-10-20 中国科学院上海光学精密机械研究所 The carrier crystal stand of KDP crystalloids growth
CN107805844B (en) * 2017-10-21 2020-10-16 中国科学院上海光学精密机械研究所 Growth-limited growth method for KDP crystal growth seed crystal
FR3087451B1 (en) * 2018-10-17 2020-11-06 Commissariat Energie Atomique PROCESS FOR MANUFACTURING A MONOCRISTAL BY GROWTH IN A SOLUTION ALLOWING A TRAP OF PARASITE CRYSTALS
CN109283769A (en) * 2018-11-26 2019-01-29 山东大学 A kind of broadband SHG quartz crystal device
CN110055579B (en) * 2019-04-10 2021-03-02 中国科学院上海光学精密机械研究所 Single-cone growth method for growing KDP crystal seed crystal
CN111876827B (en) * 2020-07-21 2022-06-07 山东大学 Potassium dihydrogen phosphate single crystal optical fiber and growing method and application thereof
CN113089074B (en) * 2021-03-30 2023-01-20 中国科学院上海光学精密机械研究所 DKDP crystal seed crystal two-dimensional motion growth method

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4517048A (en) * 1983-10-31 1985-05-14 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method for minimizing convection during crystal growth from solution
JPS61191588A (en) * 1985-02-16 1986-08-26 Univ Osaka Growth of water-soluble ionic crystal using electrodialysis
AT398255B (en) * 1992-09-04 1994-11-25 Avl Verbrennungskraft Messtech HYDROTHERMAL CULTURE METHOD FOR GROWING LARGE CRYSTALS OR CRYSTAL LAYERS FROM A METAL ORTHOPHOSPHATE USING A TEMPERATURE PLATE
CN2289806Y (en) * 1996-03-13 1998-09-02 中国科学院福建物质结构研究所 Carrier crystal stand and its seed crystal for potassium dihydrogen phosphate large single crystal growing
FR2764909B1 (en) * 1997-06-24 1999-07-16 Commissariat Energie Atomique MANUFACTURE OF PLATE-SHAPED SINGLE CRYSTALS BY GROWING SOLUTION
US5904772A (en) * 1997-08-18 1999-05-18 The Regents Of The University Of California Device for isolation of seed crystals during processing of solution
CN2326617Y (en) * 1997-10-28 1999-06-30 中国科学院福建物质结构研究所 Crystal carrier for quick-growth large-section potassium dihydrogen phosphate crystal

Also Published As

Publication number Publication date
FR2816330B1 (en) 2003-06-20
FR2816330A1 (en) 2002-05-10
CN1318653C (en) 2007-05-30
US20040011278A1 (en) 2004-01-22
CN1473211A (en) 2004-02-04
US6929693B2 (en) 2005-08-16
CN1924114A (en) 2007-03-07
WO2002038836A1 (en) 2002-05-16
RU2280719C2 (en) 2006-07-27
CN1924114B (en) 2010-05-12

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