CN109283769A - A kind of broadband SHG quartz crystal device - Google Patents
A kind of broadband SHG quartz crystal device Download PDFInfo
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- CN109283769A CN109283769A CN201811416801.0A CN201811416801A CN109283769A CN 109283769 A CN109283769 A CN 109283769A CN 201811416801 A CN201811416801 A CN 201811416801A CN 109283769 A CN109283769 A CN 109283769A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/355—Non-linear optics characterised by the materials used
- G02F1/3551—Crystals
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/353—Frequency conversion, i.e. wherein a light beam is generated with frequency components different from those of the incident light beams
Abstract
The present invention relates to a kind of broadband SHG quartz crystal device, the material of device is DADP crystal, and under the conditions of 20-30 DEG C of temperature, DADP crystalline phase matches switch-back point wavelength XcWith deuterium content accounting X in crystalDMeet linear relationship: λc=1.0272+0.1394 × XD, consider that the orientation accuracy of crystal, refraction index test precision, material purity, growth conditions intercept influence of the position to deuterium content, X in the formulaDError range be ± 2%.The cut direction of device is the multiple frequency phase matching direction of broad band laser central wavelength.Device of the present invention can meet the group velocity matching near the phase matched and central wavelength of central wavelength simultaneously, and nonlinear factor is big, and anti-light injury threshold is high, and service band is wide, and switch-back point wavelength is adjusted vulnerable to temperature.The advantages that present invention eliminates other dispersive compensation elements, have optical path simple, compact-sized, and assembly and adjustment convenience, production cost is low, easy to use.
Description
Technical field
The present invention relates to the deuterate NH that one kind can effectively realize 1 mu m waveband I class broadband SHG4H2PO4(DADP) crystal device
Part belongs to nonlinear optical technology field.
Background technique
Ultra-short pulse laser is because having the characteristics such as quick and high-resolution, in transient state imaging, superfast light switch, high speed optical communication
With storage, Laser Micro-Machining, biologic medical, high field high-order harmonics spectrum and the rapid-ignition of laser controlled nuclear fusion etc.
Field has unique advantage, payes attention in recent years by people.
1 μm of laser wavelength contains the main wavelength of Nd:YAG laser and Nd:glass laser etc., be using most at
Ripe, widest Solid State Laser wave band.By non-linear harmonic wave switch technology, near-infrared ultra-short pulse laser can be transformed into
Visible light and ultraviolet light wave band.Ultrashort laser pulse includes very wide frequency range, it is desirable to ultrashort pulse harmonic wave be effectively performed
Conversion, it is necessary to while meeting phase matched (PM) and Group-velocity Matching (GVM) to realize dispersion compensation.There are mainly four types of currently,
This compensation: (1) angle dispersion compensation scheme may be implemented in approach；(2) Cascaded crystals matching scheme；(3) chirped pulse match party
Case；(4) switch-back point matching scheme.Wherein angle dispersion compensation scheme can obtain widest effective conversion, but its optical path is complicated, add
Loss is big, using limited in superpower laser；Cascaded crystals matching scheme optical path is simple, is easy to adjustment, but only certain
Switching bandwith can be widened in degree；Chirped pulse matching scheme had not only been able to achieve broadband conversion but also can carry out wavelength tuning, but
There is a problem of optical path complexity, and high price dispersion can not be compensated, which has limited the abilities of its big bandwidth harmonic conversion；Switch-back point
Big bandwidth conversion and high conversion efficiency can be realized with scheme, optical path is most simple, no add ons, and adjustment is easy,
It is considered as being hopeful to realize inexpensive commonly used broadband frequency conversion scheme, but applicable limited material, at present only
There are a small number of crystalline materials to realize the broadband conversion of specific band.Therefore, new phase matching angle is further excavated with spectrum
The material of switch-back point has especially important value.
Currently, can effectively realize that the crystal of I class broadband SHG is the KDP crystal (DKDP) of part deuterate in 1 mu m waveband,
By adjusting deuterium content in crystal, the broadband SHG of the mu m waveband from 1.038 μm to 1.179 is may be implemented in DKDP crystal.But DKDP
The anti-light ability of wound of crystal is relatively weak, and nonlinear factor is relatively small, and which has limited the promotions of its transfer efficiency；Its temperature coefficient
Smaller, temperature bandwidth is larger, is not easy to expand service band by the way of alternating temperature.In addition, its shortest switch-back point wavelength is still
It is bigger, it cannot achieve broad band laser frequency multiplication of the Yb doped dielectric near 1.030 μm.
Summary of the invention
In view of the deficiencies of the prior art, the present invention provides a kind of broadband SHG quartz crystal devices, it is therefore an objective to which it is a kind of right to provide
The efficient frequency multiplication of switch-back point phase matched may be implemented in 1 μm of broad band laser (especially 1.030 μm of broad band lasers of Yb ion)
Quartz crystal device.
DADP device of the present invention is easy to grow large-size high-quality monocrystalline, anti-light to hurt threshold compared with DKDP
Value is higher, and nonlinear factor is bigger, thus the power bracket that can be worked is wider, and frequency-doubling conversion efficiency is higher；Its refractive index temperature
Coefficient is bigger, and temperature bandwidth is smaller, it is easier to adjust center operating wavelength with temperature；And the work of its switch-back point phase matched
Wave band covers 1.030 μm, therefore, can be used for the broadband SHG of Yb optical-fiber laser or Solid State Laser, this is previous DKDP crystal
Not available.
Term is explained:
1. phase matched (PM)
Laser of narrowband only includes the Lightwave Component of centre frequency nearby very narrow-band.Narrowband fundamental frequency light is incident on nonlinear optical
Crystal is learned, generates secondary polarized wave, i.e. frequency multiplication light wave in each of optical path place.Optical frequency electric field passed in crystal where,
Where second harmonic will be generated, due to the dispersion of crystal refractive index, the spread speed of the second harmonic of transmitting and incident base
The spread speed of frequency wave is different, when the second harmonic that different moments different parts in crystal are emitted is propagated in crystal
Interference phenomenon, relevant result determine the intensity of output light.To obtain stronger second harmonic output, different moments are in crystal
Second harmonic that middle different parts are emitted must position it is consistent, to reach this purpose, it is desirable to incident fundamental frequency light with it is secondary
Spread speed of the harmonic wave in crystal is identical, to obtain stronger frequency multiplication light output, here it is the meanings of phase matched.
2. Group-velocity Matching (GVM)
Broad band laser contains centre frequency nearby than the Lightwave Component in wider range, generally comprises many a light wave frequencies
Rate.The light wave of heterogeneity has different spread speeds in crystal, and the harmonic propagation speed of respective frequency multiplication is not also identical.
When carrying out broadband frequency conversion, these frequency of light wave realize respective phase matched simultaneously only in wideband light source, and broadband is swashed
Light just can be carried out effective harmonic conversion, obtain stronger broadband SHG light output, here it is the meanings of Group-velocity Matching.
3. optical parametric oscillator (OPO)
When the high pump light of a branch of frequency and intensity and the weak signal light of a branch of frequency and intensity incident nonlinear optical simultaneously
When learning crystal, if this two-beam meets phase-matching condition, signal light will be amplified, while it is (not busy to generate three-beam
Frequency light), this process is exactly optically erasing.If it is intracavitary that nonlinear dielectric is placed on optical resonance, pump light, signal light are allowed
With ideler frequency light repeatedly back and forth by nonlinear dielectric, when signal light-wave and ideler frequency light wave since the gain that parameter amplifies is greater than
When their losses in resonant cavity, laser generation is just formed in resonant cavity.Here it is optical parametric oscillators.
The technical solution of the present invention is as follows:
The material of a kind of broadband SHG quartz crystal device, the device is DADP crystal, under the conditions of 20-30 DEG C of temperature,
DADP crystalline phase matches switch-back point wavelength XcWith deuterium content accounting X in DADP crystalDMeet linear relationship: λc=1.0272+
0.1394×XD, consider the orientation accuracy of crystal, refraction index test precision, material purity, growth conditions, interception position contain deuterium
The influence of amount, X in the formulaDError range be ± 2%.Deuterium content accounting refers to that deuterium element accounts for the mass ratio of DADP crystal,
Unit is %；The cut direction of the device be broad band laser central wavelength multiple frequency phase matching direction, i.e., fundamental wave with times
The identical direction of frequency velocity of wave propagation obtains strongest times in this side up the relevant enhancing of second harmonic that crystal generates everywhere
Frequency light output.
Quartz crystal device of the invention can realize efficient I class broadband SHG at 1 mu m waveband, and theoretical calculation and actual test are equal
Show that the phase matching angle of DADP crystal I class frequency multiplication has switch-back point in this wave band, and the position of switch-back point is with deuterium in crystal
The variation of content and regularly move.Physically, it is 0 that the switch-back point of phase matching angle spectrally, which just represents mismatching of group velocity,
Wavelength location, frequency multiplication here has the insensitive characteristic of spectrum, it is thereby achieved that the efficient change of the band broadband laser
Frequently.In short, changing the position of phase matching angle switch-back point by adjusting the deuterium content of DADP crystal, also just change with 0 group
The band po sition of the broad band laser of fast mismatch properties.
Preferred according to the present invention, for some important Solid State Laser wavelength, DADP crystalline phase matches switch-back point wave
Long λcWhen for 1.030 μm (Yb:YAG, Yb:YLF), deuterium content accounting is 0-4% in DADP crystal；DADP crystalline phase matching folding
Return the benefit wavelength XcWhen for 1.053 μm (Nd:glass, Nd:YLF), deuterium content accounting is 16.5-20.5% in DADP crystal；DADP
Crystalline phase matches switch-back point wavelength XcFor 1.064 μm of (Nd:YAG, Nd:YVO4) when, deuterium content accounting is in DADP crystal
24.4-28.4%.
The deuterium content that above-mentioned device can be realized broadband SHG at 1.030 μm, 1.053 μm and 1.064 μm is respectively 0-
4%, 16.5-20.5% and 24.4-28.4%, the phase matched switch-back point of the device can from 1.027 μm to 1.167 μm company
Continuous tuning, to make the broad band laser light source in the wavelength band that efficient I class frequency multiplication can be achieved.
It is further preferred that DADP crystalline phase matches switch-back point wavelength XcWhen for 1.030 μm (Yb:YAG, Yb:YLF),
Deuterium content accounting is 2.0% in DADP crystal；DADP crystalline phase matches switch-back point wavelength XcFor 1.053 μm (Nd:glass,
When Nd:YLF), deuterium content accounting is 18.5% in DADP crystal；DADP crystalline phase matches switch-back point wavelength XcIt is 1.064 μm
(Nd:YAG、Nd:YVO4) when, deuterium content accounting is 26.4% in DADP crystal.
The service band of DADP crystal broadband SHG device of the present invention covers 1.030 μm of important wavelength, the i.e. master of Yb ion
Emission peak is wanted, this is not available for traditional DKDP crystal.In laser field, Yb ion is broadband, ultrafast coherent beam
Important sources, therefore mean the very big expansion of application range for the covering of the wave band.
Preferred according to the present invention, the device, which is passed sequentially through, carries out the DADP crystal of growth according to I class frequency multiplication angle
Cutting polishes light pass surface, obtained by plated film.
It is further preferred that the DADP crystal of growth is cut according to I class frequency multiplication angle, refer to: DADP crystal phase
Position matching switch-back point wavelength XcWhen for 1.030 μm (Yb:YAG, Yb:YLF), the cutting angle of DADP crystal be (41.62 °,
45.0 °), DADP crystalline phase matches switch-back point wavelength XcWhen for 1.053 μm (Nd:glass, Nd:YLF), DADP crystal is cut
Chamfer degree is (41.67 °, 45.0 °)；DADP crystalline phase matches switch-back point wavelength XcFor 1.064 μm of (Nd:YAG, Nd:YVO4)
When, the cutting angle of DADP crystal is (41.71 °, 45.0 °).
For 1.053 μm and 1.064 μm of wavelength, cutting angle be respectively (41.67 °, 45.0 °) and (41.71 °,
45.0 °), and to light pass surface polishing, plated film.
Preferred according to the present invention, for the DADP crystal as obtained by aqua-solution method growth, specific growth course is as follows:
(1) by mass percent be 99.9%-99.999% 2576-2596g ADP dissolution of raw material in 1542-1562g
In heavy water, add 2132-2152g deionized water, stirring and dissolving prepares solution；
(2) solution that step (1) prepares is filtered with the strainer that aperture is 0.22 μm, collects the crystallization in 5000mL
In device；
(3) the ADP point seed crystal that a- is cut is added into crystallizer, crystallizer is put in the sink；
(4) sink heating 36-60h, heating rate are 0.3-0.5 DEG C/h, are warming up to 18-22 DEG C of solution saturation point or more,
And 60-84h are kept, it during which uninterruptedly stirs, is uniformly dissolved solute in solution；
It is further preferred that in the step (4), sink heating 48h.
(5) solution saturation point or more is down to the speed slow cooling of 0.8-1.2 DEG C/day using high accuracy temperature control instrument
1.5-2.5 DEG C, the ADP point seed crystal that a- is cut starts to grow, and rate of crystalline growth is 3-5mm/ days, and entire growth cycle temperature reduces
4-6 DEG C, take out the DADP crystal grown.
It is further preferred that rate of crystalline growth is 3.5mm/ days in the step (5), entire growth cycle temperature drop
Low 5 DEG C.
DADP crystal is grown using aqua-solution method, the crystal of this method growth fast, optical homogeneity with the speed of growth
Well, the advantages that size is big, and this crystal can meet phase matched and group velocity matching simultaneously near target wavelength, favorably
In the efficient frequency multiplication for realizing wideband light source, more frequency contents are converted than common narrow-band crystal, obtain higher transfer efficiency.
The invention has the benefit that
1, structure is simple, easy adjustment.Broadband SHG device material therefor of the invention is the serial DADP of different deuterium contents
Crystal, the crystal are cut along corresponding phase matched direction, phase matched and group velocity matching can be achieved at the same time, one piece of crystal can
With to the effective frequency multiplication simultaneously of multiple frequency contents in the wideband light source at 1 mu m waveband, without other additional dispersive compensation elements,
Light channel structure is simpler compact, is also easy adjustment, simplifies assembling link, and manufactured laser volume is smaller, and cost is lower,
Production efficiency is higher, solid and reliable.
2, at low cost, high production efficiency.The present invention realizes frequency-doubled conversion and dispersion compensation simultaneously using single device, saves
Other dispersive compensation elements, production cost substantially reduce, while also simplifying processing and assembling link, improve production effect
Rate.
3, it easily promotes.DADP crystal is aqua-solution method growth, and preparation is convenient, and growth cycle is short, and crystal optics is high-quality, is held
It is easy to get to large size single crystal, and anti-light injury threshold is high, nonlinear factor is big, easy to cut and polishing, frequency doubling property are better than
DKDP crystal has broad prospect of application.
Detailed description of the invention
Fig. 1 is the cutting schematic diagram of DADP crystal described in the embodiment of the present invention 1；
Fig. 2 (a) is the phase matched switch-back point test of the DADP crystal of 25% deuterium content described in the embodiment of the present invention 3
Figure；
Fig. 2 (b) is the phase matched switch-back point test chart of pure ADP crystal described in the embodiment of the present invention 3；
Fig. 3 is times of pure ADP crystal described in the embodiment of the present invention 3, the DADP crystal of 25% deuterium content and pure KDP crystal
Frequency transfer efficiency schematic diagram；
Fig. 4 is that the device is turned back wavelength when each wavelength of 1 mu m waveband described in the embodiment of the present invention 3 realizes I class broadband SHG
With the relation schematic diagram of deuterium content in crystal；
Specific embodiment
The present invention is further qualified with embodiment with reference to the accompanying drawings of the specification, but not limited to this.
Embodiment 1
The material of a kind of broadband SHG quartz crystal device, device is DADP crystal, and under the conditions of 20-30 DEG C of temperature, DADP is brilliant
Body phase matched switch-back point wavelength XcWith deuterium content accounting X in DADP crystalDMeet linear relationship: λc=1.0272+0.1394 ×
XD(0≤XD≤ 1), for curve corresponding with above-mentioned formula as shown in figure 4, its orbicular spot is endpoint, five asterisms are several special wavelengths
Corresponding point.Consider the orientation accuracy of crystal, refraction index test precision, material purity, growth conditions, interception position are to deuterium content
Influence, X in the formulaDError range be ± 2%.Deuterium content accounting refers to that deuterium element accounts for the mass ratio of DADP crystal, single
Position is %；The cut direction of the device is the multiple frequency phase matching direction of broad band laser central wavelength, i.e. fundamental wave and frequency multiplication
The identical direction of velocity of wave propagation obtains strongest frequency multiplication in this side up the relevant enhancing of second harmonic that crystal generates everywhere
Light output.
Quartz crystal device of the invention can realize efficient I class broadband SHG at 1 mu m waveband, and theoretical calculation and actual test are equal
Show that the phase matching angle of DADP crystal I class frequency multiplication has switch-back point in this wave band, and the position of switch-back point is with deuterium in crystal
The variation of content and regularly move.Physically, it is 0 that the switch-back point of phase matching angle spectrally, which just represents mismatching of group velocity,
Wavelength location, frequency multiplication here has the insensitive characteristic of spectrum, it is thereby achieved that the efficient change of the band broadband laser
Frequently.In short, changing the position of phase matching angle switch-back point by adjusting the deuterium content of DADP crystal, also just change with 0 group
The band po sition of the broad band laser of fast mismatch properties.
Embodiment 2
According to a kind of broadband SHG quartz crystal device described in embodiment 1, difference is:
For some important Solid State Laser wavelength, DADP crystalline phase matches switch-back point wavelength XcFor 1.030 μm (Yb:
YAG, Yb:YLF) when, deuterium content accounting is 0-4% in DADP crystal；DADP crystalline phase matches switch-back point wavelength XcIt is 1.053
μm (Nd:glass,
When Nd:YLF), deuterium content accounting is 16.5-20.5% in DADP crystal；DADP crystalline phase matches switch-back point wave
Long λcFor 1.064 μm of (Nd:YAG, Nd:YVO4) when, deuterium content accounting is 24.4-28.4% in DADP crystal.
The deuterium content that above-mentioned device can be realized broadband SHG at 1.030 μm, 1.053 μm and 1.064 μm is respectively 0-
4%, 16.5-20.5% and 24.4-28.4%, the phase matched switch-back point of the device can from 1.027 μm to 1.167 μm company
Continuous tuning, to make the broad band laser light source in the wavelength band that efficient I class frequency multiplication can be achieved.
DADP crystalline phase matches switch-back point wavelength XcWhen for 1.030 μm (Yb:YAG, Yb:YLF), the cutting of DADP crystal
Angle is (41.62 °, 45.0 °), and DADP crystalline phase matches switch-back point wavelength XcFor 1.053 μm (Nd:glass, Nd:YLF)
When, the cutting angle of DADP crystal is (41.67 °, 45.0 °)；DADP crystalline phase matches switch-back point wavelength XcIt is 1.064 μm
(Nd:YAG、Nd:YVO4) when, the cutting angle of DADP crystal is (41.71 °, 45.0 °).The cutting schematic diagram of DADP crystal is such as
Shown in Fig. 1.
For 1.053 μm and 1.064 μm of wavelength, cutting angle be respectively (41.67 °, 45.0 °) and (41.71 °,
45.0 °), and to light pass surface polishing, plated film.
As shown in table 1, the spectrum switch-back point wavelength of pure ADP crystalline phase matching angle is 1.027 μm at room temperature, and pure KDP
At 1.038 μm, the launch wavelength of the important laser such as Yb:YAG, Yb:YLF is located at the corresponding spectrum switch-back point wavelength of crystal
At 1.030 μm, the switch-back point wavelength of the DADP quartz crystal device of 2.0% deuterate of the invention is placed exactly at this, so as to reality
The now broadband SHG of the central wavelength.Also, as the temperature rises, the switch-back point wavelength of ADP device can be floated towards shortwave direction
It moves, can be moved at 1.0225 μm at 100 DEG C, illustrate the application that can effectively widen device of the present invention by alternating temperature
Wave band.Correspondingly, no matter room temperature or high and low temperature, no matter the KDP (i.e. DKDP) of pure KDP or deuterate, all can not be in Yb laser
1.030 μm of emission peak at realize switch-back point phase matched, corresponding broadband SHG efficiency will be very limited.Table 1 is ADP
The delta data of switch-back point wavelength with temperature is matched with KDP crystalline phase；
Table 1
Embodiment 3
According to a kind of broadband SHG quartz crystal device described in embodiment 1, difference is:
Deuterium content accounting is 25% in DADP crystal.Device is passed sequentially through the DADP crystal of growth according to I class frequency multiplication angle
Degree is cut, to obtained by light pass surface polishing, plated film.
For the DKDP crystal of 25% deuterate as obtained by aqua-solution method growth, specific growth course is as follows:
(1) by mass percent be 99.9%-99.999% 2576-2596g ADP dissolution of raw material in 1542-1562g
In heavy water, add 2132-2152g deionized water, stirring and dissolving prepares solution；
(2) solution that step (1) prepares is filtered with the strainer that aperture is 0.22 μm, collects the crystallization in 5000mL
In device；
(3) the ADP point seed crystal that a- is cut is added into crystallizer, crystallizer is put in the sink；
(4) sink heating 36-60h, heating rate are 0.3-0.5 DEG C/h, are warming up to 18-22 DEG C of solution saturation point or more,
And 60-84h are kept, it during which uninterruptedly stirs, is uniformly dissolved solute in solution；
(5) solution saturation point or more is down to the speed slow cooling of 0.8-1.2 DEG C/day using high accuracy temperature control instrument
1.5-2.5 DEG C, the ADP point seed crystal that a- is cut starts to grow, and rate of crystalline growth is 3-5mm/ days, and entire growth cycle temperature reduces
4-6 DEG C, take out the DADP crystal grown.
DADP crystal is grown using aqua-solution method, the crystal of this method growth fast, optical homogeneity with the speed of growth
Well, the advantages that size is big, and this crystal can meet phase matched and group velocity matching simultaneously near target wavelength, favorably
In the efficient frequency multiplication for realizing wideband light source, more frequency contents are converted than common narrow-band crystal, obtain higher transfer efficiency.
The quartz crystal device described in the present embodiment and pure ADP quartz crystal device phase matched switch-back point are tested.It utilizes
The broadband SHG device prepared is placed on high-precision rotary platform as tunable optical source, makes institute by pulse OPO laser
Stating crystal can vertically rotate to adjust incidence angle.Incident wavelength is gradually adjusted to 1.150 μm from 0.95 μm, rotating crystal makes
Under each sampling wavelength, output frequency doubled light reaches most preferably for it, records the angle rotated every time, draws (relative initial position
) angle of rotation angle value with the change curve of wavelength, and is fitted, the phase matched switch-back point of the DADP crystal of 25% deuterium content
Shown in test chart such as Fig. 2 (a)；Shown in phase matched switch-back point test chart such as Fig. 2 (b) of pure ADP crystal；Fig. 2 (a), Fig. 2 (b)
In, abscissa λ represents incident wavelength, ordinate θpmRepresent the tilt value of the initial placement position of phase-matching angle regarding crystal, λc
Represent switch-back point wavelength, figure orbicular spot is experimental point, and the parameter in figure in formula and formula is fitted to experimental point, figure
Middle curve is drawn according to corresponding formula；By Fig. 2 (a), Fig. 2 (b) it is found that the switch-back point wavelength of two kinds of devices is respectively
1.0272 μm, 1063.3 μm, measured value is complied fully with calculated result.
In addition, being compared for times yupin effect of tri- kinds of crystal of DADP and pure KDP of pure ADP, 25% deuterium content, tie
Fruit is as shown in Figure 3.Fundamental frequency light source used is high power femtosecond pulse laser, and output center wavelength of light is that (face is pure by 1027nm
The switch-back point wavelength of KDP crystal), pulsewidth 180fs, pulse recurrence frequency 1KHz, spectral bandwidth 8.7nm.
Test result shows that ADP crystalloid (ADP and DADP) has frequency-doubling conversion efficiency more higher than KDP and bigger
Frequency multiplication exports energy, it was confirmed that ADP crystalloid device of the present invention is more than traditional KDP crystalloid device non-linearity coefficient
Greatly, more efficient, performance is more preferable.Compared with the DADP of 25% deuterium content, pure ADP crystal is due to being accomplished that switch-back point phase
It is thus higher for same its shg efficiency of broadband fundamental frequency light with (i.e. mismatching of group velocity be 0 phase matched), to confirm
Switch-back point phase matched has more advantage than common phase matching in terms of broad band laser frequency multiplication.
Claims (8)
1. a kind of broadband SHG quartz crystal device, which is characterized in that the material of the device is DADP crystal, in 20-30 DEG C of temperature
Under the conditions of, DADP crystalline phase matches switch-back point wavelength XcWith deuterium content accounting X in DADP crystalDMeet linear relationship: λc=
1.0272+0.1394×XD, deuterium content accounting refers to that deuterium element accounts for the mass ratio of DADP crystal, unit %；The device
Cut direction is the multiple frequency phase matching direction of broad band laser central wavelength, i.e. fundamental wave side identical with frequency multiplication velocity of wave propagation
To obtaining strongest frequency multiplication light output in this side up the relevant enhancing of second harmonic that crystal generates everywhere.
2. a kind of broadband SHG quartz crystal device according to claim 1, which is characterized in that the matching of DADP crystalline phase is turned back
Point wavelength XcWhen being 1.030 μm, deuterium content accounting is 0-4% in DADP crystal；DADP crystalline phase matches switch-back point wavelength XcFor
At 1.053 μm, deuterium content accounting is 16.5-20.5% in DADP crystal；DADP crystalline phase matches switch-back point wavelength XcFor
At 1.064 μm, deuterium content accounting is 24.4-28.4% in DADP crystal.
3. a kind of broadband SHG quartz crystal device according to claim 1, which is characterized in that the matching of DADP crystalline phase is turned back
Point wavelength XcWhen being 1.030 μm, deuterium content accounting is 2.0% in DADP crystal；DADP crystalline phase matches switch-back point wavelength XcFor
At 1.053 μm, deuterium content accounting is 18.5% in DADP crystal；DADP crystalline phase matches switch-back point wavelength XcIt is 1.064 μm
When, deuterium content accounting is 26.4% in DADP crystal.
4. a kind of broadband SHG quartz crystal device according to claim 1, which is characterized in that the device is passed sequentially through life
Long DADP crystal is cut according to I class frequency multiplication angle, to obtained by light pass surface polishing, plated film.
5. a kind of broadband SHG quartz crystal device according to claim 1, which is characterized in that by the DADP crystal of growth according to
I class frequency multiplication angle is cut, and is referred to: DADP crystalline phase matches switch-back point wavelength XcWhen being 1.030 μm, DADP crystal is cut
Chamfer degree is (41.62 °, 45.0 °), and DADP crystalline phase matches switch-back point wavelength XcWhen being 1.053 μm, the cutting of DADP crystal
Angle is (41.67 °, 45.0 °)；DADP crystalline phase matches switch-back point wavelength XcWhen being 1.064 μm, the cutting angle of DADP crystal
Degree is (41.71 °, 45.0 °).
6. -5 any a kind of broadband SHG quartz crystal device according to claim 1, which is characterized in that the DADP crystal is logical
Aqua-solution method growth gained is crossed, growth course is as follows:
(1) by mass percent be 99.9%-99.999% 2576-2596g ADP dissolution of raw material in 1542-1562g heavy water
In, add 2132-2152g deionized water, stirring and dissolving prepares solution；
(2) solution prepared to step (1) is filtered, and is collected in a crystallizer；
(3) the ADP point seed crystal that a- is cut is added into crystallizer, crystallizer is put in the sink；
(4) sink heating 36-60h, heating rate are 0.3-0.5 DEG C/h, are warming up to 18-22 DEG C of solution saturation point or more, and protect
60-84h are held, are during which uninterruptedly stirred, solute in solution is uniformly dissolved；
(5) with the speed slow cooling of 0.8-1.2 DEG C/day, 1.5-2.5 DEG C of solution saturation point or more are down to, the ADP point seed that a- is cut
Crystalline substance starts to grow, and rate of crystalline growth is 3-5mm/ days, and entire growth cycle temperature reduces 4-6 DEG C, takes out the DADP grown
Crystal.
7. a kind of broadband SHG quartz crystal device according to claim 6, which is characterized in that in the step (4), sink liter
Warm 48h.
8. a kind of broadband SHG quartz crystal device according to claim 6, which is characterized in that in the step (5), crystal is raw
Long speed is 3.5mm/ days, and entire growth cycle temperature reduces by 5 DEG C.
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